Fairchild Semiconductor KA5Q0740RT Datasheet
KA5Q0740RT
Fairchi ld Pow er Sw itch( FP S)
www.fairchildsemi.com
Features
• Quasi Resonant Converter Controller
• Internal Burst Mode Control ler for Stand-by Mode
• Pulse by Pulse Current Limiting
• Over Current Latch Protection
• Over Voltage Protection (Vsync: Min. 11V)
• Internal Thermal Shutdown Function
• Under Voltage Lockout
• Internal High Voltage Sense FET
• Auto-Restart Mode
Internal Block Diagram
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consists of a
high voltage power SenseFET and a current mode PWM IC.
The integrated PWM controller includes the fixed oscillator,
the under voltage lock out, the leading edge blanking, the
optimized gate turn-on/turn-off driver , the thermal shut down
protection, the over voltage protection, and the temperature
compensated precision current sources for loop compensation
and fault protection circuitry. Compared to a discrete
MOSFET and a controller or a RCC switching converter
solutions, a Fairchild Power Switch(FPS) can reduce the total
number of components, design size, and weight, so it will
improve efficiency , productivity, and system reliability. It has
a basic platform well suited for cost-effective design in a
quasi-resonant converter as a C-TV power supply.
TO-220F-5L
1. Drain 2. GND 3. V
4. Feedback 5. Sync
CC
Burst Mode
3.5V/1.25V
5
SYNC
SYNC
SYNCSYNC
FEEDBACK
FEEDBACK
FEEDBACKFEEDBACK
4
Sync
7.5V
Normal Mode
4.6V/2.6V
VREF
Ifb
Idelay
1V
+
-
OLP
+
-
12V
OVP
©2003 Fairchild Semiconductor Corporation
-
Power
on
Reset
VCC
VCC DRAIN
DRAIN
VCCVCC
DRAINDRAIN
1
3
+
32V 1%
+
-
-
-
+
+
-
+
OSC
2.5R
R
S
Q
R
11V on
12V off
-
+
-
+
Internal
BIAS
LEB
450ns
Offset
S
Q
R
Power on Reset
S
(VCC=6.5V)
VREF
QB
R
Delay
80ns
Thermal
Thermal
Thermal Thermal
Shut Down
Shut Down
Shut DownShut Down
OCL
UVLO
15V/9V
+
-
Ro
Ron
n
Rof
Roff
f
+
Rsense
-
1V
SOURCE
SOURCE
2
SOURCESOURCE
Rev.1.0.4
KA5Q0740RT
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Parameter Symbol Value Unit
Drain-Gate Voltage (R
=1MΩ)V
GS
Gate-Source (GND) Voltage V
Drain Current Pulsed
(2)
Single Pulsed Avalanch Current
(3)
(Energy
(2)
)IAS(EAS) 20(360) A(mJ)
I
Continuous Drain Current (Tc = 25°C) I
Continuous Drain Current (T
=100°C) I
C
Supply Voltage V
Analog Input Voltage Range
Total Power Dissipation
V
V
Derating 0.33 W/°C
Operating Junction Temperature T
Operating Ambient Temperature T
Storage Temperature Range T
Thermal Resistance R
DGR
GS
DM
D
D
CC
sync
FB
P
D
J
A
STG
thjc
400 V
±30 V
18.4 A
4.6 A
2.9 A
40 V
-0.3 to 13V V
-0.3 to V
CC
42 W
+160 °C
-25 to +85 °C
-55 to +150 °C
2.98 °C/W
DC
DC
DC
V
Notes:
1. T
= 25°C to 150°C
j
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L = 30mH, V
4. L = 13uH, starting T
= 50V, R
DD
= 25Ω, starting Tj = 25°C
G
= 25°C
j
2
KA5Q0740RT
Electrical Characteristics (SFET Part)
(Ta=25°C unless otherwise specified)
Parameter Symbol Condition Min. Typ. Max. Unit
V
Drain-Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Static Drain-source on Resistance
(Note)
R
DS(ON)VGS
DSS
DSS
= 0V, I
GS
V
= Max, Rating, V
DS
V
= 0.8*Max., Rating
DS
V
= 0V, T
GS
= 10V, ID = 2.3A - 0.9 1.1
Input Capacitance Ciss
V
= 0V, V
GS
f = 1MHz
Reverse Transfer Capacitance Crss - 10 -
Turn on Delay Time td(on) V
Rise Time tr - 55 -
Turn Off Delay Time td(off) - 55 -
Fall Time tf - 50 -
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
Gate-Source Charge Qgs - 4.0 -
Gate-Drain (Miller) Charge Qgd - 7.3 -
= 0.5BV
DD
(MOSFET switching
time are essentially
independent of operating
temperature)
V
= 10V, ID = 7.0A,
GS
V
= 0.5B V
DS
Switching time are Essentially
independent of operating
temperature)
= 50µA 400 - - V
D
= 0V - - 200 µA
GS
= 85°C
C
- - 300 µA
- 710 -
= 25V,
DS
DSS
DSS
, ID= 7.0A
(MOSFET
-15-
-2026
Ω
pFOutput Capacitance Coss - 90 -
nS
nC
Note:
1. Pulse test : Pulse width ≤ 300µS, duty ≤ 2%
3
KA5Q0740RT
Electrical Characteristics
(Continued)
(Ta=25°C unless otherwise specified)
Parameter Symbol Condition Min. Typ. Max. Unit
UVLO SECTION
Start Threshold Voltage V
Stop Threshold Voltage V
STARTVFB
STOP
= GND 141516 V
V
= GND 8 9 10 V
FB
OSCILLATOR SECTION
Initial Frequency F
Voltage Stability F
STABLE
Temperature Stability (Note2) ∆F
Maximum Duty Cycle D
Minimum Duty Cycle D
OSC
OSC
MAX
MIN
12V ≤ Vcc ≤ 23V 0 1 3 %
-25°C ≤ Ta ≤ 85°C0±5±10%
- 182022kHz
- 929598%
---0%
FEEDBACK SECTION
Feedback Source Current I
Shutdown Feedback Voltage V
Shutdown Delay Current I
DELAY
FB
SD
V
= GND 0.7 0.9 1.1 mA
FB
Vfb ≥ 6.9V 6.9 7.5 8.1 V
V
= 5V 456µA
FB
PROTECTION SECTION
Over Voltage Protection V
Over Current Latch Voltage (Note2) V
Thermal Shutdown Temp. T
OVP
OCL
SD
Vsync ≥ 11V 11 12 13 V
- 0.9 1.0 1.1 V
- 140 160 - °C
Note:
1. These parameters is the current flowing in the Control IC.
2. These parameters, although guaranteed, are tested in EDS(wafer test) process.
3. These parameters indicate Inductor Current.
4
Loading...