Fairchild Semiconductor KA5P0680C Datasheet
KA5P0680C
Fairchi ld Pow er Sw itch( FP S)
www.fairchildsemi.com
Features
• Adjustable Switching Frequency
• Intelligent Power Saving Mode
• Pulse by Pulse Current Limiting
• Over Current Latch Protection
• Over Voltage Protection
• Internal Thermal Shutdown Function
• Built-in Soft Start Function
• Internal High Voltage Sense FET
• Auto-Restart Mode
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of
high voltag e power SenseFET an d current mode PWM IC.
Included PWM controller features integrated fixed
oscillator, under voltage lock out, leading edge blanking,
optimized gate turn-on/turn-off driver, thermal shut down
protection, over voltage protection, and tempe rature
compensated precision current sources for loop
compensation and fault protection circuitry. compared to discrete MOSFET and cont r o l l e r or R
converter solution, a Fairchild Power Switch(FPS) can
reduce total component count, design size, and weight and at
the same time increase efficiency, productivity, and system
reliability.It has a basic platform well suited for cost
effective design in PC SMPS with Power Saving function.
TO-220-5L
1
1. Drain 2. GND 3. VCC 4. FB 5. CT
switching
CC
Internal Block Diagram
Vcc
3
Ct
5
5uA
Feedback
©2003 Fairchild Semiconductor Corporation
4
SOFT-START
(5mS)/( 0 ~ 5V )
OLP
(Vfb=7V)
OVP
(Vcc=27V)
15V/9V
VREFVCC
2V
0.7V
UVLO
900uA
2.5R
AUTO
RESTART
Drain
1
VCC
VG
LIMIT
CIRCUIT
5uA
Shutdown Latch
OCL
(Vs=1.1V)
S
R
VG
OUTPUT OFF
Q
SenseFET
Vs
Rsense
GND
2
Vref
2.5V
OSC
CLK
R
S
R
0.4V/0.6V
S
R
0.5V
Q
Q
LEB
VZ
OUTPUT OFF
BIAS
GOOD LOGIC
SRQ
PS MODE
1mS
TSD
(Tj=170 ℃)
POWER-ON
RESET
Rev.1.0.3
KA5P0680C
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Parameter Symbol Value Unit
Drain-Gate Voltage (R
=1MΩ)V
GS
Gate-Source (GND) Voltage V
Drain Current Pulsed
(2)
Single Pulsed Avalanche Energy
Avalanche Current
Continuous Drain Current (T
(4)
=25°C) I
C
(3)
I
E
Continuous Drain Current (TC=100°C) I
Maximum Supply Voltage V
CC,MAX
Input Voltage Range V
Total Power Dissipation
Darting 1.21 W/°C
Operating Ambient Temperature T
Storage Temperature T
DGR
GS
DM
AS
I
AS
D
D
FB
P
D
A
STG
800 V
±30 V
24.0 A
455 mJ
27 A
6.0 A
4.0 A
30 V
-0.3 to 7V V
150 W
-25 to +85 °C
-55 to +150 °C
DC
DC
DC
Note:
1. T
= 25°C to 150°C
j
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L = 24mH, starting T
4. L = 13µH, starting T
= 25°C
j
= 25°C
j
2
KA5P0680C
Electrical Characteristics (SFET Part)
(Ta=25°C unless otherwise specified)
Parameter Symbol Condition Min. Typ. Max. Unit
Drain-Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Static Drain-Source on Resistance
Forward Transconductance
(Note)
(Note)
DSS
DSS
R
DS(ON)VGS
gfs VDS=15V, ID=4.0A 1.5 2.5 - S
Input Capacitance Ciss
Reverse Transfer Capacitance Crss - 42 Turn on Delay Time td(on) V
Rise Time tr - 150 Turn Off Delay Time td(off) - 300 Fall Time tf - 130 Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
Gate-Source Charge Qgs - 16 Gate-Drain (Miller) Charge Qgd - 27 -
VGS=0V, ID=50µA 800 - - V
VDS=Max., Rating,
V
=0V
GS
=0.8Max., Rating,
V
DS
V
=0V, TC=125°C
GS
--50µA
- - 200 µA
=10V, ID=4.0A - 1.6 2.0 Ω
- 1600 -
=0V, VDS=25V,
V
GS
f=1MHz
DD
=0.5BV
DSS
, ID=7.0A
-60(MOSFET swi tching
time are essentially
independent of
operating temperature)
V
=10V, ID=7.0A,
V
GS
DS
=0.5BV
(MOSFET
DSS
-70switching time are
essentially independent of
operating temperature)
pFOutput Capacitance Coss - 140 -
nS
nC
Note:
1. Pulse test: Pulse width ≤ 300µS, duty ≤ 2%
2.
1
S
--- -=
R
3
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