Fairchild Semiconductor KA5M0765RQCTU Datasheet
KA5M0765RQC
Fairchild Power Switch(SPS)
www.fairchildsemi.com
Features
• Precision fixed operating frequency (70KHz)
• Low start-up current (Typ. 100µA)
• Pulse by pulse current limiting
• Over load protection
• Over current protection
• Over voltage protection (Min. 25V)
• Internal thermal shutdown function
• Under voltage lockout
• Internal high voltage sense FET
• Auto-restart mode
Description
The SPS product family is specially designed for an off-line
SMPS with minimal external components. The S PS consist of
high voltage power SenseFET and current mode PWM IC.
Included PWM controller features integrated fixed frequency
oscillator, under voltage lock-out, leading edge blanking, optimized gate turn-on/turn-off driver, thermal shutdown pr otection, over voltage protection, and temperature compensated
precision current sources for loop compensation and fault protection circuitry . Compared to discrete MOSFET and PWM
controller or RCC solution, a SPS can reduce total component
count, design size, weight and at the same time increase efficiency, productivity, and system reliability .
It has a basic platform well suited for cost-effective design in
either a flyback converter or a forward converter .
TO-220-5L
1
1. DRAIN 2. GND 3. V
4. FB 5. S/S
CC
Internal Block Diagram
OVP
++++
27V
-
V
Feed back 4
Soft Start
©2001 Fairchild Semiconductor Corporation
5
7.5V
TSD
=150℃)
(T
J
OVP-out
(VCC=27V)
OCL
(VS=1.4V)
CC
++++
-
OVP-out
V
5uA
OLP
REF
Vcc
3
UVLO
Vref
15V/9V
1mA
2.5R
R
5V
OSC
-
++++
Power-on Reset
/Aut o- re s tart
CLK
LEB
V
OFFSET
INTERNAL
Good Logic
SRQ
S
Q
R
Shutdown
Latch
BIAS
VOLTAGE
CIRCUIT
※
LEB : Leading Edge Blanking
※
OCL : Over Current Limit
LIMIT
V
14V
S
Rsense
Sense
FET
Drain
1
2
GND
Rev.1.0.1
KA5M0765RQC
Absolute Maximum Ratings
Parameter Symbol Value Unit
Maximum Drain voltage
Drain-Gate voltage (R
(1)
=1MΩ)V
GS
Gate-source (GND) voltage V
Drain current pulsed
Single pulsed avalanche energy
Continuous drain current (T
(2)
(3)
=25°C) I
C
Continuous drain current (TC=100°C) I
Maximum Supply voltage V
Input voltage range V
Total power dissipation
Operating ambient temperature T
Storage temperature T
Notes:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=24mH, starting Tj=25°C
V
D,MAX
DGR
GS
I
DM
E
AS
D
D
CC,MAX
FB
P
D
Derating 1.11 W/°C
A
STG
650 V
650 V
±30 V
28.0 A
DC
570 mJ
7.0 A
5.6 A
DC
DC
30 V
−0.3 to V
SD
V
140 W
−25 to +85 °C
−55 to +150 °C
2
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Parameter Symbol Condition Min. Typ. Max. Unit
Drain-source breakdown voltage BV
Zero gate voltage drain current I
Static drain-source on resistance
Forward transconductance
(note)
(note)
DSS
DSS
R
DS(ON)VGS
gfs VDS=50V, ID=3.5A 3.0 - - S
Input capacitance Ciss
Reverse transfer capacitance Crss - 25 Turn on delay time td(on) V
Rise time tr - 70 150
Turn off delay time td(off) - 105 220
Fall time tf - 65 140
Total gate charge
(gate-source+gate-drain)
Qg
Gate-source charge Qgs - 6.5 Gate-drain (Miller) charge Qgd - 18 -
VGS=0V, ID=50µA 650 - - V
VDS=Max., Rating,
V
=0V
GS
=0.8Max., Rating,
V
DS
V
=0V, TC=125°C
GS
--50µA
- - 200 µA
=10V, ID=3.5A - 1.25 1.6 Ω
- 1120 -
=0V, VDS=25V,
V
GS
f=1MHz
DD
=0.5BV
DSS
, ID=7.0A
-2560
(MOSFET switchin g
time are essentially
independent of
operating temperature)
-3850
V
=10V, ID=7.0A,
GS
V
=0.8BV
DS
DSS
KA5M0765RQC
pFOutput capacitance Coss - 125 -
nS
nC
Note:
Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%
1
S
--- -=
R
3
KA5M0765RQC
Electrical Characteristics (Control part)
(Ta=25°C unless otherwise specified)
Parameter Symbol Condition Min. Typ. Max. Unit
UVLO SECTION
Start threshold voltage V
Stop threshold voltage V
START
STOP
After turn on 14 15 16 V
OSCILLATOR SECTION
Initial accuracy F
Frequency change with temperature
(2)
OSC
∆F/∆T −25°C≤Ta≤+85°C-±5 ±10 %
Ta=25°C616773kHz
Maximum duty cycle Dmax - 74 77 80 %
FEEDBACK SECTION
Feedback source current I
Shutdown Feedback voltage V
FB
SD
Ta=25°C, 0V<Vfb<3V 0.7 0.9 1.1 mA
Vfb>6.5V 6.9 7.5 8.1 V
Shutdown delay current Idelay Ta=25°C, 5V≤Vfb≤V
SOFT START SECTION
Soft Start Voltage V
Soft Start Current I
SS
SS
V
FB
Sync & S/S=GND 0.8 1.0 1.2 mA
REFERENCE SECTION
Output voltage
Temperature Stability
(1)
(1)(2)
Vref Ta=25°C 4.80 5.00 5.20 V
Vref/∆T −25°C≤Ta≤+85°C-0.30.6mV/°C
CURRENT LIMIT (SELF-PROTECTION) SECTION
Peak Current Limit I
OVER
Max. inductor current 4.40 5.00 5.60 A
PROTECTION SECTION
Thermal shutdown temperature (Tj)
(1)
T
SD
TOTAL DEVICE SECTION
Start Up current I
Operating supply current
(control part only)
START
I
OP
VCC=14V - 0.1 0.17 mA
VCC<28 - 7 12 mA
- 8.4 9 9.6 V
SD
456µA
=2V 4.7 5.0 5.3 V
- 140 160 - °C
Notes:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
4
Typical Performance Characteristics (SFET part)
KA5M0765RQC
V
GS
Top : 15.0 V
10.0 V
1
10
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5 .5 V
0
10
, Drain Current [A]
D
I
-1
10
-1
10
0
10
※
Note :
1. 250μs Pulse Test
2. T
= 25
C
1
10
VDS, Drain-Source Voltage [V]
Figure 1. Output Charac teristics
3.0
VGS = 10V
2.5
]
Ω
, [
2.0
DS(on)
R
1.5
Drain-Source On-Resistance
1.0
0369121518
ID , Drain Current [A]
VGS = 20V
1
10
℃
0
10
, Drain Current [A]
D
I
-1
10
246810
℃
150
℃
25
℃
-55
※
Notes :
1. V
= 50V
DS
2. 250μs Pulse Test
VGS, Gate -Sou rc e Vo lta g e [V]
Figure 2. Transfer Characteristics
1
10
0
10
℃
℃
150
25
※
, Reverse Drain Current [A]
DR
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Note s :
1. VGS = 0V
2. 250μs Pulse Test
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage
VDS = 130V
VDS = 325V
VDS = 520V
※
= 6.5 A
Note : I
D
2500
2000
C
iss
1500
C
oss
1000
C
Capacitances [pF]
500
0
-1
10
rss
0
10
C
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
C
oss
gd
C
= C
rss
gd
※
Note ;
1. V
2. f = 1 MHz
1
10
= 0 V
GS
VDS, Drain-Source Voltage [V]
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 5 10 15 20 25 30 35 40 45
QG, Tota l Gate Cha rg e [n C]
Figure 6. Gate Charge vs. Gate-Source VoltageFigure 5. Capacitance vs. Drain-Source Voltage
5
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