Fairchild Semiconductor KA5M0165R Datasheet

©2003 Fairchild Semiconductor Corporation

www.fairchildsemi.com

Rev.1.0.5

Features

• Precision Fixed Operating Frequency (100/67/50kHz )

• Low Start-up Current (Typ. 100uA)

• Pulse by Pulse Current Limiting

• Over Load Protection

• Over Voltage Protection (Min. 25V)

- except KA5H0165RVN

• Internal Thermal Shutdown Function

• Under Voltage Lockout

• Internal High Voltage Sense FET

• Auto-Restart Mode

Description

The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of high
voltage power SenseFET and current mode PWM IC. Included
PWM controller features integrated fixed oscillator, under
voltage lock out, leading edge blanking, optimized gate turn-on/
turn-off driver , thermal shut down protection, over voltage
protection, and temperature compensated precision current
sources for loop compensation and fault protection circuitry
compared to discrete MOSFET and controller or R

CC

switching converter solution, The Fairchild Power Switch(FPS)
can reduce total component count, design size, weight and at the
same time increase efficiency, productivity, and system
reli ab il it y. It is well suited for cost effective design of flyback
converters.

TO-220F-4L 8-DIP

1

1

1.6.7.8. Drain

2. GND

3. Vcc

4. FB

5. NC

1. GND

2. Drain

3. Vcc

4. FB

uA

Internal Block Diagram

V

CC

32V

5

µ

A

2.5R
1R

1mA

0.1V

+

−

OVER VOLTAGE S/D

+

−

7.5V

27V

Thermal S/D

S
R

Q

Power on reset

+

−

L.E.B

S
R

Q

OSC

5V

Vref

Internal

bias

Good

logic

SFET

DRAIN

GND

FB

9V

KA5x0165Rxx-SERIES

KA5H0165R/RN, KA5M0165R/RN, KA5L0165R/RN,
KA5H0165RVN
Fairchi ld Pow er Sw itch( FP S)

KA5X0165RXX-SERIES

2

Absolute Maximum Ratings

(Ta=25°C, unless otherwise specified)

Note:

1. Repetitive rating: Pulse width limited by maximum junction temperature

2. L=24mH, starting Tj=25°C

Characteristic Symbol Value Unit

Drain-Gate Voltage (R

GS

=1MΩ)V

DGR

650 V

Gate-Source (GND) Voltage V

GS

±30 V

Drain Current Pulsed

(1)

I

DM

4.0 A

DC

Continuous Drain Current (TC=25°C) I

D

1.0 A

DC

Continuous Drain Current (TC=100°C) I

D

0.7 A

DC

Single Pulsed Avalanche Energy

(2)

E

AS

95 mJ

Maximum Supply Voltage V

CC,MAX

30 V

Analog Input Voltage Range V

FB

-0.3 to V

SD

V

Total Power Dissipation

P

D

40 W

Derating 0.32 W/°C

Operating Junction Temperature. T

J

+160 °C

Operating Ambient Temperature. T

A

-25 to +85 °C

Storage Temperature Range. T

STG

-55 to +150 °C

KA5X0165RXX-SERIES

3

Electrical Characteristics (SFET Part)

(Ta=25°C unless otherwise specified)

Note:

1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%

2.

Parameter Symbol Condition Min. Typ. Max. Unit

D

rain-Source Breakdown Voltage

BV

DSS

VGS=0V, ID=50µA 650 - - V

Z

ero Gate Voltage Drain Current

I

DSS

VDS=Max. Rating, VGS=0V - - 50 µA
V

DS

=0.8Max. Rating,

V

GS

=0V, TC=125°C

- - 200 µA

Static Drain-Source on Resistance

(Note)

R

DS(ON)VGS

=10V, ID=0.5A - 8 10 Ω

Forward Transconductance

(Note)

gfs VDS=50V, ID=0.5A 0.5 - - S

Input Capacitance Ciss

V

GS

=0V, VDS=25V,

f=1MHz

- 250 ­pFOutput Capacitance Coss - 25 -

Reverse Transfer Capacitance Crss - 10 ­Turn on Delay Time td(on)

V

DD

=0.5B V

DSS

, ID=1.0A
(MOSFET switching time is
essentially independent of
operating temperature)

-12­nS

Rise Time tr - 4 ­Turn Off Delay Time td(off) - 30 ­Fall Time tf - 10 ­Total Gate Charge

(Gate-Source+Gate-Drain)

Qg

V

GS

=10V, ID=1.0A,

V

DS

=0.5B V

DSS

(MOSFET
switching time is essentially
independent of operating
temperature)

--21
nC

Gate-Source Charge Qgs - 3 ­Gate-Drain (Miller) Charge Qgd - 9 -

S

1

R

--- -=

KA5X0165RXX-SERIES

4

Electrical Characteristics (Control Part)

(Continued)

(Ta=25°C unless otherwise specified)

Note:

1. These parameters, although guaranteed, are not 100% tested in production

2. These parameters, although guaranteed, are tested in EDS (wafer test) process

Parameter Symbol Condition Min. Typ. Max. Unit
UVLO SECTION

Start Threshold Voltage V

START

VFB=GND 14 15 16 V

Stop Threshold Voltage V

STOP

VFB=GND 8.2 8.8 9.4 V

OSCILLATOR SECTION

Initial Accuracy F

OSC

KA5H0165Rxx 90 100 110 kHz

Initial Accuracy F

OSC

KA5M0165Rx 61 67 73 kHz

Initial Accuracy F

OSC

KA5L0165Rx 45 50 55 kHz

Frequency Change With Temperature

(2)

∆F/∆T-25°C ≤ Ta ≤ +85°C-±5 ±10 %

Maximum Duty Cycle Dmax KA5H0165Rxx 62 67 72 %
Maximum Duty Cycle Dmax

KA5M0165Rx
KA5L0165Rx

72 77 82 %

FEEDBACK SECTION

Feedback Source Current I

FB

Ta=25°C, 0V ≤ Vfb ≤ 3V 0.7 0.9 1.1 mA

Shutdown Feedback Voltage V

SD

Vfb ≥ 6.5V 6.9 7.5 8.1 V

Shutdown Delay Current Idelay Ta=25°C, 3V ≤ Vfb ≤ V

SD

456µA

REFERENCE SECTION

Output Voltage

(1)

Vref Ta=25°C 4.80 5.00 5.20 V

Temperature Stability

(1)(2)

Vref/∆T-25°C ≤ Ta ≤ +85°C-0.30.6mV/°C

CURRENT LIMIT(SELF-PROTECTION)SECTION

Peak Current Limit I

OVER

Max. inductor current 0.53 0.6 0.67 A

PROTECTION SECTION

Thermal Shutdown Temperature

(1)

T

SD

- 140 160 - °C

Over Voltage Protection V

OVP

except KA5H0165RVN 25 27 29 V

TOTAL STANDBY CURRENT SECTION

Start-up Current I

START

VCC=14V - 100 170 µA

Operating Supply Current
(Control Part Only)

I

OP

V

CC

≤ 28 - 7 12 mA