Fairchild Semiconductor KA3S1265RF Datasheet

©2001 Fairchild Semiconductor Corporation

www.fairchildsemi.com

Rev.1.0.2

Features

• Wide operatimg frequency range up to (150kHz)

• Pulse by pulse over current limiting

• Over load protection

• Over voltage protecton (Min. 23V)

• Internal thermal shutdown function

• Under voltage lockout

• Internal high voltage sense FET

• External sync terminal

• Auto Restart Mode

Description

The Fairchild Power Switch(FPS) product family is specially
designed for an off line SMPS with minimal extern al
components. The Fairchild Power Switch(FPS) consist of
high voltage power SenseFET and current mode PWM IC.
Included control IC features a trimmed oscillator, under
voltage lock-out, leading edge blanking, optimized gate
turn-on/turn-off driver, thermal shut down protection, over
voltage protection, temperature compensated precision
current sources for loop compensation and fault protection
circuit. compared to discrete MOSFET and controller or
R

CC

switching converter solution, a Fairchild Power
Switch(FPS) can reduce total component count, design size,
weight and at the same time increase efficiency,
productivity, and system reliability. It has a basic platform
well suited for cost-effective C-TV power supply.

TO-3P-5L

1. DRAIN 2. GND 3. Vcc 4. FB 5. Sync

TO-3PF-5L

1

1

Internal Block Diagram

#3 V

CC

32V

2

µ

A

5V

2.5R
1R

1mA

0.1V

+

−

OVER VOLTAGE S/D

+

−

7.5V

25V

Thermal S/D

S
R

Q

Power on reset

+

−

L.E.B

S
R

Q

OSC

5V

Vref

Internal

bias

Good

logic

SFET

#1 DRAIN

#2 GND

#4 FB

#5 Sync

9V

+

−

6.4V

KA3S1265R/KA3S1265RF/
KA3S1265RD

Fairchild Power S witch(FPS)

KA3S1265R/KA3S1265RF/KA3S1265RD

2

Absolute Maximum Ratings

Note:

1. Tj=25°C to 150°C

2. Repetitive rating: Pulse width limited by maximum juncti on temperature

3. L=10mH, V

DD=

50V, RG=27Ω, starting Tj=25 °C

Characteristic Symbol Value Unit

Maximum drain voltage

(1)

V

D,MAX

650 V

Drain-gate voltage (R

GS

=1MΩ)

V

DGR

650 V

Gate-source (GND) voltage

V

GS

±30 V

Drain current pulsed

(2)

I

DM

48.0 A

DC

Single pulsed avalanche energy

(3)

E

AS

785 mJ

Continuous drain current (T

C

=25°C)

I

D

12 A

DC

Continuous drain current (TC=100°C)

I

D

8.4 A

DC

Maximum supply voltage

V

CC,MAX

30 V

Input voltage range

V

FB

−0.3 to V

SD

V

Total power dissipation

P

D

269 W

Derating

2.17 W/°C

Operating ambient temperature

T

A

−25 to +85 °C

Storage temperature

T

STG

−55 to +150 °C

KA3S1265R/KA3S1265RF/KA3S1265RD

3

Electrical Characteristics (SFET part)

(Ta = 25°C unless otherwise specified)

Note:

Pulse test: P ulse width ≤ 300µS, duty cycle ≤ 2%

Characteristic Symbol Test condition Min. Typ. Max. Unit

Drain-source breakdown voltage BV

DSS

VGS=0V, ID=50µA 650 - - V

Zero gate voltage drain current I

DSS

VDS=Max., Rating,
V

GS

=0V

--50µA

V

DS

=0.8Max., Rating,

V

GS

=0V, TC=125°C

- - 200 mA

Static drain-source on resistance

(note)

R

DS(ON)VGS

=10V, ID=6.0A - 0.72 - W

Forward transconductance

(note)

gfs VDS=50V, ID=6.0A 5.7 - - S

Input capacitance Ciss

V

GS

=0V, VDS=25V,

f=1MHz

- 2700 ­pFOutput capacitance Coss - 300 -

Reverse transfer capacitance Crss - 61 ­Turn on delay time t

d(on)

VDD=0.5BV

DSS

, ID=12.0A
(MOSFET switching
time are essentially
independent of
operating temperature)

-18-

nS

Rise time tr - 37 ­Turn off delay time t

d(off)

-88­Fall time tf - 36 ­Total gate charge

(gate-source+gate-drain)

Qg

V

GS

=10V, ID=12.0A,

V

DS

=0.5BV

DSS

(MOSFET
switching time are
essentially independent of
operating temperature)

- - 140
nC

Gate-source charge Qgs - 20 ­Gate-drain (Miller) charge Qgd - 69 -

S

1

R

--- -=

KA3S1265R/KA3S1265RF/KA3S1265RD

4

Electrical Charcteristics (CONTROL part)

(Ta = 25°C unless otherwise specified)

Note:

1. These parameters, although guaranteed, are not 100% tested in production

2. These parameters, although guaranteed, are tested in EDS(water test) process

3.The amplitude of the sync. pulse is recommended to be between 2V and 3V for stable sync. function.

Characteristic Symbol Test condition Min. Typ. Max. Unit

UVLO SECTION

Start threshold voltage V

START

-141516V

Stop threshold voltage V

STOP

After turn on 9 10 11 V

OSCILLATOR SECTION

Initial accuracy FOSC Ta=25°C182022kHz
Frequency change with temperature

(2)

∆F/∆T −25°C ≤ Ta ≤ +85°C-±5 ±10 %

Maximum duty cycle Dmax - 92 95 98 %

FEEDBACK SECTION

Feedback source current I

FB

Ta=25°C, Vfb=GND 0.8 1 1.2 mA

Shutdown feedback voltage V

SD

-6.97.58.1V

Shutdown delay current I

delay

Ta=25°C, 5V ≤ Vfb ≤ V

SD

1.4 1.8 2.2 µA

SYNC. & SOFT START SECTION

Soft start voltage V

SS

VFB=2V 4.7 5.0 5.4 V

Soft start current I

SS

Sync & S/S=GND 0.8 - - mA

Sync threshold voltage V

SYTH

KA3S1265R,KA3S1265RF 6.0 6.4 6.8

VSync threshold voltage(ON)

(3)

V

SYTH(ON)

KA3S1265RD

6.86 7.23 7.60

Sync threshold voltage(OFF)

(3)

V

SYTH(OFF)

5.92 6.23 6.54

REFERENCE SECTION

Output voltage

(1)

Vref Ta=25°C 4.80 5.00 5.20 V

Temperature stability

(1)(2)

Vref/∆T −25°C ≤ Ta ≤ +85°C-0.30.6mV/°C

CURRENT LIMIT (SELF-PROTECTION) SECTION

Peak Current Limit I

OVER

Max. inductor current 7.04 8.00 8.96 A

PROTECTION SECTION

Thermal shutdown temperature (Tj)

(1)

T

SD

- 140 160 - °C

TOTAL DEVICE SECTION

Start Up current I

START

VCC=14V 0.1 0.3 0.55 mA

Operating supply current
(Control Part Only)

I

OP

Ta=25°C 6 12 18 mA

V

cc

Zener voltage V

Z

ICC=20mA 30 32.5 35 V