Fairchild Semiconductor KA3S0880RFB Datasheet
©2001 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev.1.0.1
Features
• Wide operating frequency range up to 150KHz
• Pulse by pulse over current limiting
• Over current protection
• Over voltage protection (Min. 23V)
• Internal thermal shutdown function
• Under voltage lockout
• Internal high voltage sense FET
• External sync terminal
• Auto Restart Mode
Description
The SPS product family is specially designed for an off-line
SMPS with minimal external components. The SP S consist of
high voltage power SenseFET and current mode PWM Controller IC. PWM controller features integrated fixed oscillator,
under voltage lock out, leading edge blanking, optimized gate
turn-on/turn-off driver, therma l shut down protection, over voltage protection, temperature compensated precision current
sources for loop compensation and fault protection circuit.
Compared to discrete MOSFET and controller or RCC switching converter solution, a SPS can reduce total component count,
design size, weight and at the same time increase & efficiency,
productivity, and system reliability. It has a basic platform well
suited for cost effective design in C-TV power supply.
TO-3PF-5L
1. DRAIN 2. GND 3. V
CC
4. FB 5. Sync
TO-3P-5L
1
1
Internal Block Diagram
#3 V
CC
32V
2
µ
A
5V
2.5R
1R
1mA
0.1V
+
−
OVER VOLTAGE S/D
+
−
7.5V
25V
Thermal S/D
S
R
Q
Power on rese t
+
−
L.E.B
S
R
Q
OSC
5V
Vref
Internal
bias
Good
logic
SFET
#1 DRAIN
#2 GND
#4 FB
#5 Sync
9V
+
−
6.4V
KA3S0880RB/KA3S0880RFB
Fairchild Power Switch(SPS)
KA3S0880RB/KA3S0880RFB
2
Absolute Maximum Ratings
Notes:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=24mH, starting Tj=25°C
4. L=13µH, starting Tj=25°C
Parameter Symbol Value Unit
Maximum Drain voltage
(1)
V
D,MAX
800 V
Drain-Gate voltage (R
GS
=1MΩ)V
DGR
800 V
Gate-source (GND) voltage V
GS
±30 V
Drain current pulsed
(2)
I
DM
32.0 A
DC
Single pulsed avalanche energy
(3)
E
AS
810 mJ
Avalanche current
(4)
I
AS
25 A
Continuous drain current (T
C
=25°C) I
D
8.0 A
DC
Continuous drain current (TC=100°C) I
D
5.6 A
DC
Maximum supply voltage V
CC,MAX
30 V
Input voltage range V
FB
−0.3 to V
SD
V
Total power dissipation
P
D
190 W
Derating 1.54 W/°C
Operating ambient temperature T
A
−25 to +85 °C
Storage temperature T
STG
−55 to +150 °C
KA3S0880RB/KA3S0880RFB
3
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Note:
Pulse test: P ulse width ≤ 300µS, duty cycle ≤ 2%
Parameter Symbol Condition Min. Typ. Max. Unit
Drain-source breakdown voltage BV
DSS
VGS=0V, ID=50µA 800 - - V
Zero gate voltage drain current I
DSS
VDS=Max., Rating,
V
GS
=0V
--50µA
V
DS
=0.8Max., Rating,
V
GS
=0V, TC=125°C
- - 200 µA
Static drain-source on resistance
(note)
R
DS(ON)VGS
=10V, ID=5.0A - 1.2 1.5 Ω
Forward transconductance
(note)
gfs VDS=15V, ID=5.0A 1.5 2.5 - S
Input capacitance Ciss
V
GS
=0V, VDS=25V,
f=1MHz
- 2460 pFOutput capacitance Coss - 210 -
Reverse transfer capacitance Crss - 64 Turn on delay time td(on) V
DD
=0.5BV
DSS
, ID=8.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
--90
nS
Rise time tr - 95 200
Turn off delay time td(off) - 150 450
Fall time tf - 60 150
Total gate charge
(gate-source+gate-drain)
Qg
V
GS
=10V, ID=8.0A,
V
DS
=0.5BV
DSS
(MOSFET
switching time are
essentially independent of
operating temperature)
- - 150
nC
Gate-source charge Qgs - 20 Gate-drain (Miller) charge Qgd - 70 -
S
1
R
--- -=
KA3S0880RB/KA3S0880RFB
4
Electrical Characteristics (Control part)
(Ta=25°C unless otherwise specified)
Notes:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
3. The amplitude of the sync. pulse is recommended to be between 2V and 3V for stable sync. function.
Parameter Symbol Condition Min. Typ. Max. Unit
UVLO SECTION
Start threshold voltage V
START
-141516V
Stop threshold voltage V
STOP
After turn on 9 10 11 V
OSCILLATOR SECTION
Initial accuracy F
OSC
Ta=25°C182022kHz
Frequency change with temperature
(2)
∆F/∆T −25°C≤Ta≤+85°C-±5 ±10 %
Maximum duty cycle Dmax - 92 95 98 %
FEEDBACK SECTION
Feedback source current I
FB
Ta=25°C, Vfb=GND 0.7 0.9 1.1 mA
Shutdown Feedback voltage V
SD
-6.97.58.1V
Shutdown delay current Idelay Ta=25°C, 5V≤Vfb≤V
SD
1.4 1.8 2.2 µA
SYNC. & SOFT START SECTION
Soft start voltage V
SS
VFB=2V 4.7 5.0 5.3 V
Soft start current I
SS
Sync & S/S=GND 0.8 1.0 1.2 mA
Sync threshold voltage
(3)
V
SYTH
Vfb=5V 6.0 6.4 6.8 V
REFERENCE SECTION
Output voltage
(1)
Vref Ta=25°C 4.80 5.00 5.20 V
Temperature Stability
(1)(2)
Vref/∆T −25°C≤Ta≤+85°C-0.30.6mV/°C
CURRENT LIMIT (SELF-PROTECTION) SECTION
Peak Current Limit I
OVER
Max. inductor current 4.40 5.00 5.60 A
PROTECTION SECTION
Thermal shutdown temperature (Tj)
(1)
T
SD
- 140 160 - °C
Over voltage protection voltage V
OVP
-232528V
TOTAL DEVICE SECTION
Start Up current I
START
VCC=14V 0.1 0.3 0.55 mA
Operating supply current
(control part only)
I
OP
Ta=25°C 6 12 18 mA
V
CC
zener voltage V
Z
ICC=20mA 30 32.5 35 V
KA3S0880RB/KA3S0880RFB
5
Typical Performance Characteristics
(These characteristic graphs are normalized at Ta=25°C)
Fig. 1 O p era t ing F r equenc y
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Fosc
Fig.2 Feedback Sourc e Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Ifb
Fig.3 Operating Cur rent
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Iop
Fig.4 Max Inductor Curren t
0.8
0.85
0.9
0.95
1
1.05
1.1
-25 0 25 50 75 100 125 150
Ipeak
Fig.5 Start up Current
0.5
0.7
0.9
1.1
1.3
1.5
-25 0 25 50 75 100 125 150
Istart
Fig.6 Star t Threshold Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vstart
Temperature [°C] Temperature [°C]
Temperature [
°
C
] Temperature [
°
C
]
Temperature [°
C
]Temperature [°C]
Figure 1. Operating Frequency Figure 2. Feedback Source Current
Figure 3. Operating Supply Current Figure 4. Peak Current Limit
Figure 5. Start up Current Figure 6. Start Threshold Voltage
I
over
Loading...