Fairchild Semiconductor BSV52 Datasheet
BSV52
C
E
SOT-23
Mark: B2
NPN Switching Transistor
This device is designed for high speed saturated switching at
collector currents of 10 mA to 100 mA. Sourced from Process 21.
B
BSV52
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CES
V
EBO
I
C
TJ, T
stg
Collector-Emit t er Voltage 12 V
Collector-Base Voltage 20 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 200 mA
Operating and Stora ge Junction Temperature Range -55 to +150
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
*BSV52
P
D
R
θ
JA
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Total Device Dissipat ion
Derate above 25°C
Thermal Resistance , Junctio n to Ambien t 556
225
1.8
mW
mW/°C
C/W
°
1997 Fairchild Semiconductor Corporation
µ
NPN Switching Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
sat
BE(
Collector-Emit t er Breakdown Voltage IC = 10 mA, IB = 012V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
I
= 10 µA, IE = 0
C
= 100 µA, IC = 0
I
E
Collector-Cut off Current VCB = 10 V, IE = 0
V
= 10 V, IE = 0, TA = 125°C
CB
DC Current Gain IC = 1.0 mA, VCE = 1.0 V
I
= 10 mA, VCE = 1.0 V
C
= 50 mA, VCE = 1.0 V
I
Collector-Emitter Saturation Volta g e IC = 10 mA, IB = 0.3 mA
)
Base-Emitter Satura tion Voltage IC = 10 mA, IB = 1.0 mA
)
C
I
= 10 mA, IB = 1.0 mA
C
= 50 mA, IB = 5.0 mA
I
C
I
= 50 mA, IB = 5.0 mA
C
20 V
5.0 V
100
5.0
25
40
120
25
0.3
0.25
0.4
0.7 0.85
1.2
nA
A
V
V
V
V
V
BSV52
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
C
eb
Transition Frequency IC = 10 mA, VCE = 10 V,
f = 100 MHz
Collector-Base Capacitance IE = 0, VCB = 5.0 V, f = 1.0 MHz 4.0 pF
Emitter-Base Capacitance IC = 0, VEB = 1.0 V, f = 1.0 MHz 4.5 pF
400 MHz
SWITCHING CHARACTERISTICS
t
s
t
on
t
off
Storage Time IB1 = IB2 = IC = 10 mA 13 ns
Turn-On Time VCC = 3.0 V, IC = 10 mA,
I
= 3.0 mA
B1
Turn-Off Time VCC = 3.0 V, IC = 10 mA,
I
= 3.0 mA, IB2 = 1.5 mA
B1
12 ns
18 ns
Spice Model
NPN (Is=44.14f Xti=3 Eg=1.11 Vaf=100 Bf=78.32 Ne=1.389 Ise=91.95f Ikf=.3498 Xtb=1.5 Br=12.69m Nc=2
Isc=0 Ikr=0 Rc=.6 Cjc=2.83p Mjc=86.19m Vjc=.75 Fc=.5 Cje=4.5p Mje=.2418 Vje=.75 Tr=1.073u Tf=227.6p
Itf=.3 Vtf=4 Xtf=4 Rb=10)
3
T ypical Characteristics
BSV52
NPN Switching Transistor
(continued)
DC Current Gain
vs Col le c t or Curre nt
200
V = 1.0V
CE
150
125 °C
100
25 ° C
50
FE
h - DC CURRENT GAIN
0.01 0.1 1 10 100
I - CO LLEC TOR CU RREN T ( m A)
C
- 40 °C
Bas e-E mitter Sat u ration
Voltage vs Collector Current
1.4
1.2
0.8
0.6
0.4
BESAT
V - B ASE- EM ITTER VOLTAGE (V)
β = 10
1
- 40 °C
25 °C
125 °C
0.1 1 10 100 300
I - COLLECTOR CURRENT (mA)
C
Collecto r-Emi tter Satu r ation
V o lt age v s C ollec tor C ur rent
0.5
β
= 10
0.4
0.3
25 °C
0.2
- 40 °C
0.1
0
0.1 1 10 100 500
CESAT
V - COLLECTOR-EMITTER VOLTAGE (V)
I - COLLECTOR CURRENT (mA)
C
125 °C
Base-Emitter ON V oltage vs
Co llec tor Cur rent
1
0.8
0.6
0.4
0.2
BE(O N)
0.1 1 10 100
V - BASE-E MIT TER ON VOLTAGE (V)
- 40°C
25 °C
125 °C
V = 1.0V
I - COLLECTOR CURRENT (mA)
C
CE
Collector-Cutoff Current
vs Amb ient Tem perature
600
V = 20V
CB
100
10
CBO
I - COLLECTOR CURRENT (nA)
1
25 50 75 100 125 150
T - AMBIE NT TEM PE RATUR E ( C)
A
°
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