Fairchild Semiconductor BSS138 Datasheet
BSS138
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
May 1995
These N-Channel enhancement mode field effect
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. These products
have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching
performance. These products are particularly suited for
low voltage, low current applications such as small
0.22 A, 50V. R
High density cell design for extremely low R
Rugged and Relaible
Compact industry standard SOT-23 surface mount
package.
= 3.5Ω @ VGS = 10V.
DS(ON)
DS(ON)
.
servo motor control, power MOSFET gate drivers, and
other switching applications.
_______________________________________________________________________________
G
D
S
Absolute Maximum Ratings T
= 25°C unless otherwise noted
A
Symbol Parameter BSS138 Units
V
DSS
V
DGR
V
GSS
I
D
Drain-Source Voltage 50 V
Drain-Gate Voltage (RGS < 20KΩ)
50 V
Gate-Source Voltage - Continuous ± 20 V
- Non Repetitive (TP < 50 µS)
± 40
Drain Current - Continuous 0.22 A
- Pulsed 0.88
P
D
Maximum Power Dissipation 0.36 W
Derate Above 25°C 2.8 mW/°C
TJ,T
T
L
Operating and Storage Temperature Range -55 to 150 °C
STG
Maximum Lead Temperature for Soldering
300 °C
Purposes, 1/16" from Case for 10 Seconds
THERMAL CHARACTERISTICS
R
θ
© 1997 Fairchild Semiconductor Corporation
Thermal Resistance, Junction to Ambient 350 °C/W
JA
BSS138 Rev. A1
Electrical Characteristics (T
= 25°C unless otherwise noted)
A
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
I
DSS
I
GSSF
I
GSSR
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 50 V
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VDS = 50 V, V
VDS = 30 V, V
= 0 V
GS
= 0 V 100 nA
GS
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS= 0 V
T
J
=125°C
0.5 µA
5 µA
100 nA
-100 nA
ON CHARACTERISTICS (Note 1)
V
R
GS(th)
DS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS = VGS, ID = 1 mA
VGS = 10 V, ID = 0.22 A
0.8 1.3 1.6 V
0.81 3.5
VGS = 4.5 V, ID = 0.22 A 1.16 6
g
FS
Forward Transconductance
VDS = 10 V, ID = 0.22 A
0.12 0.45 S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 15 25 pF
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Reverse Transfer Capacitance 7.5 10 pF
30 60 pF
SWITCHING CHARACTERISTICS (Note 1)
t
t
t
t
D(on)
r
D(off)
f
Turn - On Delay Time VDD = 30 V, ID = 0.29 A,
Turn - On Rise Time 12 ns
VGS = 10 V, R
GEN
= 50 Ω
8 ns
Turn - Off Delay Time 16 ns
Turn - Off Fall Time 22 ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
I
SM
V
SD
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Maximum Continuous Source Current 0.22 A
Maximum Pulse Source Current (Note 1) 0.88 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.44 A 0.8 1.4 V
Ω
BSS138 Rev. A1
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