Fairchild Semiconductor BSR18A Datasheet
BSR18A
C
E
SOT-23
Mark: T92
PNP General Purpose Amplifier
This device is designed as a general purpose amplifier and
switching applications at collector currents of 10 µA to 100
mA. Sourced from Process 66.
B
BSR18A
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
Collector-Emitter Voltage 40 V
Collector-Base Voltage 40 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 200 mA
Operating and Stora ge Junction Temperature Range -55 to +150
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
*BSR18A
P
D
R
θ
JA
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Total Device Dissipation
Derate above 25°C
Thermal Resistance , Junctio n to Ambient 357
350
2.8
mW
mW/°C
C/W
°
3
1997 Fairchild Semiconductor Corporation
µ
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
sat
BE(
Collector-Emitter Breakdown
Voltage
I
= 10 µA, IB = 0
C
Collector-Base Breakdown Voltage IC = 1.0 mA, IE = 0 40 V
Emitter-Base Breakdown Voltage
I
= 10 µA, IC = 0
E
Collector-Cutoff Current VCB = 30 V 50 nA
Emitter-Cutoff Current VEB = 3.0 V, IC = 0 50 nA
DC Current Gain IC = 0.1 mA, VCE = 1.0 V
I
= 1.0 mA, VCE = 1.0 V
C
I
= 10 mA, VCE = 1.0 V
C
I
= 50 mA, VCE = 1.0 V
C
I
= 100 mA, VCE = 1.0 V
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
)
Base-Emitter Saturation Voltag e IC = 10 mA, IB = 1.0 mA
)
C
I
= 50 mA, IB = 5.0 mA
C
I
= 50 mA, IB = 5.0 mA
C
40 V
5.0 V
60
80
100
300
60
30
0.25
0.4
0.65 0.85
0.95
V
V
V
V
BSR18A
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
C
eb
h
ie
h
fe
h
oe
Transition Frequency IC = 10 mA, VCE = 20,
f = 100 MHz
Collector-Base Capacitance VCB = 5.0 V, IE = 0, f = 100 kHz 4.5 pF
Emitter-Base Capacitance VEB = 0.5 V, IC = 0, f = 100 kHz 10 pF
Input Impedance VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 2.0 12
Small-Signal Current Gain VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 100 400
Output Admittance VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 3.0 60
250 MHz
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
Delay Time IC = 10 mA, IB1 = 1.0 mA, 35 ns
Rise Time VEB = 0.5 V 35 ns
Storage Time
I
= 10 mA, I
C
= I
off
B
= 1.0 mA
on
B
275 ns
Fall Time 75 ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 0.01%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4
Xtf=6 Rb=10)
k
Ω
S
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