Fairchild Semiconductor BSR17A Datasheet
BSR17A
C
E
SOT-23
Mark: U92
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier. Sourced from Process 23.
B
BSR17A
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
Collector-Emitter Voltage 40 V
Collector-Base Voltage 60 V
Emitter-Base Voltage 6.0 V
Collector Current - Continuous 200 mA
Operating and Stora ge Junction Temperature Range -55 to +150
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
*BSR17A
P
D
R
θ
JA
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Total Device Dissipation
Derate above 25°C
Thermal Resistance , Junctio n to Ambient 357
350
2.8
mW
mW/°C
C/W
°
3
1997 Fairchild Semiconductor Corporation
µ
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEX
I
BEX
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
sat
BE(
Collector-Emitte r Break down
Voltage
Collector-Base Breakdown Voltage I
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
= 10 µA, I
I
C
= 1.0 mA, I
C
I
= 10 µA, I
E
V
= 30 V, TA = 150°C
CB
B
E
C
= 0
= 0 40 V
= 0
60 V
6.0 V
Collector-Cutoff Current VCE = 30 V, VEB = 3.0 V 50 nA
Reverse Base Current VCE = 30 V, VEB = 3.0 V 50 nA
DC Current Gain IC = 0.1 mA, VCE = 1.0 V
I
= 1.0 mA, VCE = 1.0 V
C
I
= 10 mA, VCE = 1.0 V
C
I
= 50 mA, VCE = 1.0 V
C
I
= 100 mA, VCE = 1.0 V
Collector-Emitter Saturation Voltage* IC = 10 mA, IB = 1.0 mA
)
Base-Emitter Saturatio n Voltage* IC = 10 mA, IB = 1.0 mA
)
C
= 50 mA, IB = 5.0 mA
I
C
I
= 50 mA, IB = 5.0 mA
C
40
70
100
60
30
0.65 0.85
5.0
300
0.2
0.3
0.95
A
µ
V
V
V
V
BSR17A
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
C
eb
h
ie
h
fe
h
oe
Transition Frequency IC = 20 mA, VCE = 20 V,
f = 100 MHz
Collector-Base Capacitance VCB = 5.0 V, IE = 0, f = 1.0 MHz 4.0 pF
Emitter-Base Capacitance VEB = 0.5 V, IC = 0, f = 1.0 MHz 8.0 pF
Input Impedance VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 1.0 10
Small-Signal Current Gain VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 100 400
Output Admittance VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 1.0 40
300 MHz
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
Delay Time IC = 10 mA, IB1 = 1.0 mA,
V
= 0.5 V
EB
Rise Time 35 ns
Storage Time
I
= 10 mA, I
C
= I
off
B
= 1.0 mA
on
B
Fall Time 50 ns
35 ns
200 ns
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0 %
Spice Model
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p
Itf=.4 Vtf=4 Xtf=2 Rb=10)
k
Ω
S
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