Fairchild Semiconductor BSR14 Datasheet
BSR14
C
BSR14
E
SOT-23
Mark: U8
B
NPN General Purpose Amplifier
This device is for use as a medium power amplifier and switch
requiring collector currents up to 500 mA. Sourced from Process
19. See BCW65C for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 40 V
Collector-Base Voltage 75 V
Emitter-Base Voltage 6.0 V
Collector Current - Continuous 800 mA
Operating and Stora ge Junction Temperature Range -55 to +150
°
C
3
Symbol Characteristic Max Units
*BSR14
P
D
R
θ
JA
Total Device Dissipation
Derate above 25°C
Thermal Resistance , Junctio n to Ambient 357
350
2.8
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997 Fairchild Semiconductor Corporation
mW
mW/°C
C/W
°
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEX
I
BEX
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
sat
BE(
Collector-Emitter Breakdown
Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
= 10 µA, IB = 0
I
C
I
= 10 µA, IE = 0
C
I
= 10 µA, IC = 0
E
75 V
40 V
6.0 V
Collector-Cutoff Current VCB = 60 V
= 60 V, TA = 150°C
V
CB
Collector-Cutoff Current VCE = 60 V, VEB = 3.0 V 10 nA
Reverse Base Current VCE = 60 V, VEB = 3.0 V 20 nA
Emitter-Cutoff Current VEB = 3.0 V, IC = 0 15 nA
DC Current Gain IC = 0.1 mA, VCE = 10 V
I
= 1.0 mA, VCE = 10 V
C
= 10 mA, VCE = 10 V
I
C
I
= 150 mA, VCE = 10 V
C
I
= 150 mA, VCE = 1.0 V
C
I
= 500 mA, VCE = 10 V
Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA
)
Base-Emitter Saturatio n Voltage IC = 150 mA, IB = 15 mA
)
C
I
= 500 mA, IB = 50 mA
C
I
= 500 mA, IB = 50 mA
C
35
50
75
100
50
40
0.6 1.2
10
10
300
0.3
1.0
2.0
nA
µ
V
V
V
V
BSR14
A
SMALL SIGNAL CHARACTERISTICS
f
T
C
CB
h
ie
h
fe
h
oe
Current Gain - Bandwidth Product IC = 20 mA, VCE = 20,
f = 100 mHz
Collector-Base Capacitance VCB= 10V, IE = 0, f = 1.0 MHz 8.0 pF
Input Impedance VCE=10V,IC=1.0 mA,f=1.0 kHz 2.0 8.0
Small-Signal Current Gain VCE=10V,IC=1.0 mA,f=1.0 kHz 50 300
Output Admittance VCE=10V,IC=1.0 mA,f=1.0 kHz 5 35
300 MHz
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
Delay Time VCC = 30 V, V
Rise Time IC = 150 mA, IB1 = 15 mA 25 ns
Storage Time VCC = 30 V, IC = 150 mA, 225 ns
Fall Time IB1 = IB2 = 15 mA 60 ns
= 0.5 V, 10 ns
BE(OFF)
Spice Model
NPN (Is=14.34f Xti=3 Eg=1.1 1 V af=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6
Vtf=1.7 Xtf=3 Rb=10)
k
Ω
S
µ
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