Fairchild Semiconductor BS270 Datasheet
April 1995
S
BS270
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 500mA DC. These products are
particularly suited for low voltage, low current applications such
as small servo motor control, power MOSFET gate drivers,
and other switching applications.
________________________________________________________________________________
400mA, 60V. R
High density cell design for low R
= 2Ω @ VGS = 10V.
DS(ON)
DS(ON)
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
D
.
G
Absolute Maximum Ratings T
Symbol Parameter BS270 Units
V
DSS
V
DGR
V
GSS
I
D
P
D
TJ,T
T
L
THERMAL CHARACTERISTICS
R
JA
θ
Drain-Source Voltage 60 V
Drain-Gate Voltage (RGS < 1MΩ)
Gate-Source Voltage - Continuous
- Non Repetitive (tp < 50µs)
Drain Current - Continuous 400 mA
- Pulsed 2000
Maximum Power Dissipation 625 mW
Derate Above 25°C 5 mW/°C
Operating and Storage Temperature Range -55 to 150 °C
STG
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
Thermal Resistacne, Junction-to-Ambient 200 °C/W
= 25°C unless otherwise noted
A
60 V
±20
±40
300 °C
V
© 1997 Fairchild Semiconductor Corporation
BS270.SAM
Electrical Characteristics (T
= 25°C unless otherwise noted)
A
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
I
DSS
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 µA 60 V
Zero Gate Voltage Drain Current
VDS = 60 V, V
GS
= 0 V
1 µA
TJ = 125oC 500 µA
I
I
GSSF
GSSF
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
10 nA
-10 nA
ON CHARACTERISTICS (Note 1)
V
R
GS(th)
DS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 500 mA
1 2.1 2.5 V
1.2 2
TJ = 125oC 2 3.5
1.8 3
0.14 0.225
400 600
V
I
g
DS(ON)
D(ON)
FS
VGS = 4.5 V, ID = 75 mA
Drain-Source On-Voltage VGS = 10 V, ID = 500 mA 0.6 1 V
VGS = 4.5 V, ID = 75 mA
On-State Drain Current VGS = 10 V, VDS > 2 V
VGS = 4.5 V, VDS > 2 V
Forward Transconductance VDS > 2 V
, ID = 200 mA 100 320 mS
DS(on)
DS(on)
DS(on)
2000 2700 mA
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 11 25 pF
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Reverse Transfer Capacitance 4 5 pF
20 50 pF
SWITCHING CHARACTERISTICS (Note 1)
t
on
t
off
Turn-On Time
Turn-Off Time 10 ns
VDD = 30 V, ID = 500 m A,
VGS = 10 V, R
GEN
= 25 Ω
10 ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
I
SM
V
SD
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
Maximum Continuous Drain-Source Diode Forward Current 400 mA
Maximum Pulsed Drain-Source Diode Forward Current 2000 mA
Drain-Source Diode Forward Voltage
V
= 0 V, IS = 400 mA (Note 1)
GS
0.88 1.2 V
Ω
BS270.SAM
D
Typical Electrical Characteristics
2
1.5
1
0.5
I , DRAIN-SOURCE CURRENT (A)
0
0 1 2 3 4 5
V = 10V
GS
9.0
8.0
7.0
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics.
2
V = 10V
1.75
1.5
1.25
DS(ON)
R , NORMALIZED
0.75
DRAIN-SOURCE ON-RESISTANCE
0.5
GS
I = 500mA
D
1
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
6.0
5.0
4.0
3.0
3
V =4.0V
GS
2.5
4.5
5.0
6.0
2
1.5
DS(on)
R , NORMALIZED
1
DRAIN-SOURCE ON-RESISTANCE
0.5
0 0.4 0.8 1.2 1.6 2
I , DRAIN CURRENT (A)
D
7.0
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current.
3
V = 10V
2.5
1.5
DS(on)
R , NORMALIZED
0.5
DRAIN-SOURCE ON-RESISTANCE
GS
T = 125°C
2
J
25°C
1
-55°C
0
0 0.4 0.8 1.2 1.6 2
I , DRAIN CURRENT (A)
D
8.0
9.0
10
Figure 3. On-Resistance Variation
with Temperature.
2
V = 10V
DS
1.6
1.2
0.8
D
I , DRAIN CURRENT (A)
0.4
0
0 2 4 6 8 10
V , GATE TO SOURCE VOLTAGE (V)
GS
T = -55°C
J
25°C
Figure 5. Transfer Characteristics.
125°C
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
1.1
1.05
1
0.95
th
0.9
V , NORMALIZED
0.85
GATE-SOURCE THRESHOLD VOLTAGE
0.8
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
V = V
I = 1 mA
D
Figure 6. Gate Threshold Variation with
Temperature.
DS GS
BS270.SAM
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