Fairchild Semiconductor BPW36 Datasheet
0.040 (1.02)
0.100 (2.54)
0.050 (1.27)
45°
0.040 (1.02)
0.030 (0.76)
NOM
0.184 (4.67)
0.209 (5.31)
0.50 (12.7)
MIN
0.255 (6.48)
Collector
(Case)
Base
Emitter
Ø0.100 (2.54)
0.020 (0.51) 3X
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip
1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of
940 nm.
PACKAGE DIMENSIONS
FEATURES
• Hermetically sealed package
• Narrow reception angle
• European “Pro Electron” registered
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-65 to +125 °C
Storage Temperature T
STG
-65 to +150 °C
Soldering Temperature (Iron)
(3,4,5 and 6)
T
SOL-I
240 for 5 sec °C
Soldering Temperature (Flow)
(3,4 and 6)
T
SOL-F
260 for 10 sec °C
Collector-Emitter Voltage V
CEO
45 V
Collector-Base Voltage V
CBO
45 V
Emitter-Base Voltage V
EBO
5V
Power Dissipation (TA= 25°C)
(1)
P
D
300 mW
Power Dissipation (TC= 25°C)
(2)
P
D
600 mW
ABSOLUTE MAXIMUM RATINGS
(TA= 25°C unless otherwise specified)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
BPW36/BPW37
HERMETIC SILICON PHOTOTRANSISTOR
DESCRIPTION
• The BPW36/37 are silicon phototransistors
mounted in narrow angle TO-18 packages.
SCHEMATIC
2001 Fairchild Semiconductor Corporation
DS300279 3/13/01 1 OF 4 www.fairchildsemi.com
C
B
E
www.fairchildsemi.com 2 OF 4 3/13/01 DS300279
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
Collector-Emitter Breakdown IC= 10 mA, Ee = 0 BVCEO 45 — — V
Emitter-Base Breakdown IE= 100 µA, Ee = 0 BVEBO 5.0 — — V
Collector-Base Breakdown IC= 100 µA, Ee = 0 BVCBO 45 — — V
Collector-Emitter Leakage VCE= 10 V, Ee = 0 ICEO — — 100 nA
Reception Angle at 1/2 Sensitivity 0 — ±10 — Deg.
On-State Collector Current BPW36
Ee = 0.5 mW/cm
2
IC(ON)
1.0 — — mA
V
CE
= 5 V
(7)
On-State Collector Current BPW37
Ee = 0.5 mW/cm
2
IC(ON) 0.5 — — mA
V
CE
= 5 V
(7)
Turn-On Time
I
C
= 2 mA, VCC= 10 V
t
on
—8—µs
R
L
= 100 1
Turn-Off Time
I
C
= 2 mA, VCC= 10 V
t
off
—7—µs
R
L
= 100 1
Saturation Voltage IC= 1.0 mA, Ee = 3.0 mW/cm2V
CE(SAT)
— — 0.40 V
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA
=25°C) (All measurements made under pulse conditions)
BPW36/BPW37
HERMETIC SILICON PHOTOTRANSISTOR
TYPICAL PERFORMANCE CURVES
10
Ee = 20 mW/cm
1.0
0.1
- NORMALIZED LIGHT CURRENT
L
I
.01
.01
0.1 1.0 10 100 0.1
VCE - COLLECTOR TO EMITTER VOLTAGE
10 mW/cm
5 mW/cm
2 mW/cm
1 mW/cm
Normalized to:
V
Ee = 10 mW/cm
Fig. 1 Light Current vs. Collector to Emitter Voltage
2
2
2
2
2
= 5 V
CE
2
10
1.0
0.1
Normalized to:
= 5 V
V
CE
- NORMALIZED LIGHT CURRENT
L
I
.01
1.0 10 100
H - TOTAL IRRADIANCE IN mW/cm
Ee = 10 mW/cm
Fig. 2 Normalized Light Current vs. Radiation
2
2
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