Fairchild Semiconductor BF245C, BF245B, BF245A Datasheet
BF245A/BF245B/BF245C
N-Channel Amplifiers
• This device is designed for VHF/UHF amplifiers.
• Sourced from process 50.
BF245A/BF245B/BF245C
12
TO-92
350
2.8
6
mW
mW/°C
2.2
3.8
7.5
6.5
15
25
GSD
Absolute Maximum Ratings
Symbol Parameter Value Units
V
DG
V
GS
I
GF
P
D
T
J, TSTG
Drain-Gate Voltage 30 V
Gate-Source Voltage 30 V
Forward Gate Current 10 mA
Total Device Dissipation @TA=25°C
Derate above 25°C
Operating and Storage Junction Temperature Range - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Mi n. Ty p. Max. Units
Off Characteristics
V
(BR)GSs
V
GS
V
GS
I
GSS
On Characteristics
I
DSS
On Characteristics
g
fs
Gate-Source Breakdown Voltage VDS = 0, IG = 1µA30 V
Gate-Source BF245A
(off) Gate-Source Cut-off Voltage VDS = 15V, ID = 10nA -0.5 -8 V
Gate Reverse Current VGS = 20V, VGS = 0 5 nA
Zero-Gate Voltage Drain Current
Common Source Forward
Transconductance
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
V
= 15V, ID = 200µA0.4
BF245B
BF245C
BF245A
BF245B
BF245C
DS
V
= 15V, VGS = 0 2
GS
VGS = 15V, VGS = 0, f = 1KHz 3 6.5 m
1.6
3.2
V
mA
Ω
©2002 Fairchild Semiconductor Corporation Rev. A, March 2002
Package Demensions
4.58
0.46
±0.10
+0.25
–0.15
BF245A/BF245B/BF245C
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A, March 2002
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