Fairchild Semiconductor BC847 Datasheet

NPN EPITAXIAL



BC846/847/848/849/850 SILICON TRANSISTOR

SWITCHING AND AMPLIFIER APPLICATIONS

• Suitable for automatic insertion in thick and thin-film circuits

• LOW NOISE: BC849, BC850

• Complement to BC856 ... BC860

ABSOLUTE MAXIMUM RATINGS (TA=25°°C)

Characteristic Symbol Rating Unit

Collector Base Voltage
: BC846
: BC847/850
: BC848/849

Collector Emitter Voltage

: BC846

: BC847/850

: BC848/849

Emitter-Base Voltage

: BC846/847

: BC848/849/850

Collector Current (DC)

Collector Dissipation

Junction Temperature

Storage Temperature

V

CBO

80
50
30

V

CEO

65
45
30

V

EBO

6
5

I

C

P

C

T

J

T

STG

100
310
150

-65 ~ 150

ELECTRICAL CHARACTERISTICS (TA=25°°C)

Characteristic Symbol Test Conditions Min Typ Max Unit

Collector Cut-off Current

DC Current Gain

Collector Emitter Saturation Voltage

Collector Base Saturation Voltage

Base Emitter On Voltage

Current Gain Bandwidth Product

Collector Base Capacitance

Emitter Base Capacitance

Noise Figure : BC846/847/848

: BC849/850

: BC849

: BC850

I
h
V

V
V
f
C

C
NF

NF

CBO

FE

CE

BE

BE

T

CBO
EBO

(sat)
(sat)
(on)

VCB=30V, IE=0
VCE=5V, IC=2mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA
VCE=5V, IC=10mA
f=100MHz
VCB=10V, f=1MHz
VEB=0.5V, f=1MHz
VCE=5V, IC=200µA
f=1KHz, RG=2KΩ
VCE=5V, IC=200µA
RG=2KΩ
f=30~15000Hz

V
V
V

V
V
V

V
V

mA

mW

°C
°C

SOT-23

1. Base 2. Emitter 3. Collector

110

580

200
700
900
660

300

3.5

1.2

1.4

1.4

nA

15
800
250
600

mV
mV
mV

90

mV
mV

700

mV

720

MHz

6

pF
9
2

pF

10

dB

4

dB

4

dB

3

dB

hFE CLASSIFICATION

Classification A B C

h

FE

110-220 200-450 420-800

MARKING CODE

TYPE 846A 846B 846C 847A 847B 847C 848A 848B 848C 849A 849B 849C 850A 850B 850C

MARK 8AA 8AB 8AC 8BA 8BB 8BC 8CA 8CB 8CC 8DA 8DB 8DC 8EA 8EB 8EC

Rev. B

1999 Fairchild Semiconductor Corporation

NPN EPITAXIAL
BC846/847/848/849/850 SILICON TRANSISTOR