Fairchild Semiconductor BC847 Datasheet
NPN EPITAXIAL
BC846/847/848/849/850 SILICON TRANSISTOR
SWITCHING AND AMPLIFIER APPLICATIONS
• Suitable for automatic insertion in thick and thin-film circuits
• LOW NOISE: BC849, BC850
• Complement to BC856 ... BC860
ABSOLUTE MAXIMUM RATINGS (TA=25°°C)
Characteristic Symbol Rating Unit
Collector Base Voltage
: BC846
: BC847/850
: BC848/849
Collector Emitter Voltage
: BC846
: BC847/850
: BC848/849
Emitter-Base Voltage
: BC846/847
: BC848/849/850
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
V
CBO
80
50
30
V
CEO
65
45
30
V
EBO
6
5
I
C
P
C
T
J
T
STG
100
310
150
-65 ~ 150
ELECTRICAL CHARACTERISTICS (TA=25°°C)
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector Cut-off Current
DC Current Gain
Collector Emitter Saturation Voltage
Collector Base Saturation Voltage
Base Emitter On Voltage
Current Gain Bandwidth Product
Collector Base Capacitance
Emitter Base Capacitance
Noise Figure : BC846/847/848
: BC849/850
: BC849
: BC850
I
h
V
V
V
f
C
C
NF
NF
CBO
FE
CE
BE
BE
T
CBO
EBO
(sat)
(sat)
(on)
VCB=30V, IE=0
VCE=5V, IC=2mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA
VCE=5V, IC=10mA
f=100MHz
VCB=10V, f=1MHz
VEB=0.5V, f=1MHz
VCE=5V, IC=200µA
f=1KHz, RG=2KΩ
VCE=5V, IC=200µA
RG=2KΩ
f=30~15000Hz
V
V
V
V
V
V
V
V
mA
mW
°C
°C
SOT-23
1. Base 2. Emitter 3. Collector
110
580
200
700
900
660
300
3.5
1.2
1.4
1.4
nA
15
800
250
600
mV
mV
mV
90
mV
mV
700
mV
720
MHz
6
pF
9
2
pF
10
dB
4
dB
4
dB
3
dB
hFE CLASSIFICATION
Classification A B C
h
FE
110-220 200-450 420-800
MARKING CODE
TYPE 846A 846B 846C 847A 847B 847C 848A 848B 848C 849A 849B 849C 850A 850B 850C
MARK 8AA 8AB 8AC 8BA 8BB 8BC 8CA 8CB 8CC 8DA 8DB 8DC 8EA 8EB 8EC
Rev. B
1999 Fairchild Semiconductor Corporation
NPN EPITAXIAL
BC846/847/848/849/850 SILICON TRANSISTOR
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