Fairchild Semiconductor BC846B, BC846A-MR, BC846B-MR, BC846A Datasheet

3

1997 Fairchild Semiconductor Corporation

BC846A / BC846B / BC847A / BC847B / BC847C

NPN General Purpose Amplifier

This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1.0 µA to 50 mA. Sourced from Process 07.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Value Units

V

CEO

Collector-Emitter Voltage

BC846 series BC847 series

65 45

V V

V

CES

Collector-Base Voltage

BC846 series BC847 series

80 50

V V

V

EBO

Emitter-Base Voltage 6.0 V

I

C

Collector Current - Continuous 100 mA

TJ, T

stg

Operating and Stora ge Junction Temperature Range -55 to +150

°

C

Symbol Characteristic Max Units

*BC846 / BC847

P

D

Total Devi ce Dissi pation

Derate above 25°C

325

2.8

mW

mW/°C

R

θ

JA

Thermal Resistance , Junctio n to Ambient 357

°

C/W

BC847A BC847B BC847C

SOT-23

Mark: 1E. / 1F. / 1G.

C

B

E

C

B

E

BC846A BC846B

SOT-23

Mark: 1A. / 1B.

*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

T ypical Characteristics

Electrical Characteristics

TA = 25°C unless otherwise noted

OFF CHARACTERISTICS

Symbol Parameter Test Conditions Min Max Units

V

(BR)CEO

Collector-Emitter Breakdown Voltage

I

C

= 10 mA, IB = 0

846A / B 847A / B

65 45

V

(BR)CES

Collector-Base Breakdown Voltage

I

C

= 10 µA, IE = 0

846A / B 847A / B

80 50

V

(BR)EBO

Emitter-Base Breakdown Voltage

I

E

= 10 µA, IC = 0

6.0 V

I

CBO

Collector-Cutoff Current VCB = 30 V

V

CB

= 30 V, TA = 150°C

15

5.0

nA µA

ON CHARACTERISTICS

h

FE

DC Current Gain IC = 2.0 mA, VCE = 5.0 V

846A / 847A

846B / 847B

847C

110 200 420

220 450 800

V

CE(

sat

)

Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA

I

C

= 100 mA, IB = 5.0 mA

0.25

0.6

V V

V

BE(on)

Base-Emitter On Voltage IC = 2.0 mA, VCE = 5.0 V

I

C

= 10 mA, VCE = 5.0 V

0.58 0.70

0.77

V V

SMALL SIGNAL CHARACTERISTICS

f

T

Current Gain - Bandwidth Product IC = 10 mA, VCE = 5.0,

f = 100 MHz

100 MHz

C

obo

Output Capacitance VCB = 10 V, f = 1.0 MHz 4.5 pF

NF Noise Figure IC = 0.2 mA, VCE = 5.0,

R

S

= 2.0 kΩ, f = 1.0 kHz,

BW = 200 Hz

10 dB

Collector-Emitter Sat urati on Voltage vs Collector Current

0.1 1 10 100

0.05

0.1

0.15

0.2

0.25

0.3

I - COLLECTOR CURRENT (mA)

V - COLLECTOR-EMITTER VOLTAGE (V)

C

CESAT

25 °C

- 40 °C

125 °C

β

= 10

Typical Pulsed Current Gain

vs Collector Current

0.01 0.03 0.1 0.3 1 3 10 30 100

0

200

400

600

800

1000

1200

I - COLLECTOR CURRENT (mA)

h - TYPICAL PULSED CUR REN T GAIN

C

FE

125 °C

25 °C

- 40 °C

V = 5.0 V

CE

BC846A / BC846B / BC847A / BC847B / BC847C

NPN General Purpose Amplifier

(continued)

3

BC846A / BC846B / BC847A / BC847B / BC847C

T ypical Characteristics

NPN General Purpose Amplifier

(continued)

Input and Output Capacitance

vs Reverse Bias Voltage

048121620

0

1

2

3

4

5

REVERSE BIAS VOLTAGE (V)

CAP ACITANCE (pF)

f = 1.0 MHz

C

ob

C

te

Wideband Noise Frequency

vs Source Resistance

1,000 2,000 5,000 10,000 20,000 50,000 100,000

0

1

2

3

4

5

R - SOURCE RESISTANCE ( )

NF - NOI S E FI GU RE ( d B)

V = 5.0 V

BANDWI DT H = 1 5.7 kH z

CE

I = 10 µA

C

I = 100 µA

C

S

Ω

I = 30 µA

C

Base-Emitter Saturation

Voltage vs Collector Curr en t

0.1 1 10 100

0.2

0.4

0.6

0.8

1

I - COLLECT OR CURRENT (mA)

V - COLLECTOR-EMITTER VOLTAGE (V)

C

BESAT

β

= 10

25 °C

- 40 °C

125 °C

Base-Emitter ON Voltage vs

Collector Current

0.1 1 10 40

0.2

0.4

0.6

0.8

1

I - COLLECTOR CURRENT (mA)

V - BASE-EMITTER ON VOLTAGE (V)

C

BEON

V = 5.0 V

CE

25 °C

- 40 °C

125 °C

Collect or-Cutoff Current

vs Amb ient Temperature

25 50 75 100 125 150

0.1

1

10

T - A M BI E NT T EMP ER AT UR E ( C)

I - COLLECTOR CURRENT (nA)

A

CBO

V = 45V

°

CB

Normalized Collector-Cutoff Current

vs Ambient Temp er ature

25 50 75 100 125 150

1

10

100

1000

T - AMBIENT TEMPERATURE ( C)

CHARACTERIS TIC S RELATIVE TO VALUE AT T = 25 C

A

°

Contours of Constant Gain

Bandwidth Pr oduct ( f )

0.1 1 10 100

1

2

3

5

7

10

I - COLLECTOR CURRENT (mA)

V - COLLECTOR VOLTAGE (V)

C

175 MHz

T

CE

150 MHz

125 MHz

75 MHz

100 MHz

Typical Characteristics (continued)

Contours of Consta n t

Narrow Band Noise Figure

1 10 100 1,000

100

200

500

1,000

2,000

5,000

10,000

I - COLLECTOR CURRENT ( A)

R - SOURCE RESISTANCE ( )

µ

C

Ω

S

V = 5.0 V f = 1.0 kHz BANDWIDTH = 200 Hz

CE

6.0 dB

3.0 dB

4.0 dB

8.0 dB

2.0 dB

Contours of Constant

Narrow Band Noise Figure

1 10 100 1,000

100

200

500

1,000

2,000

5,000

10,000

I - COLLECTOR CURRENT ( A)

R - SOURC E RESISTANCE ( )

µ

C

Ω

S

V = 5. 0 V f = 100 Hz

BANDWIDTH = 20 Hz

CE

3.0 dB

4.0 dB

8.0 dB 10 dB

12 dB 14 dB

6.0 dB

Contours of Constant

Nar r ow Band No is e Figure

1 10 100 1000

100

200

500

1000

2000

5000

10000

I - COLL E CTOR CURR ENT ( A)

R - SOURCE RESISTANCE ( )

6.0 dB

3.0 dB

4.0 dB

8.0 dB

2.0 dB

1.0 dB

C

V = 5.0V f = 10kHz BANDWIDTH = 2.0kHz

CE

Ω

S

µ

Contours of Constant

Nar row Band No ise Fi gure

0.01 0.1 1 10

100

200

500

1000

2000

5000

10000

I - COLLEC TO R CU RRENT ( A)

R - SOURCE RESISTANCE ( )

7.0 dB

3.0 dB

4.0 dB

8.0 dB

2.0 dB

5.0 dB

C

V =

5.0V

CE

Ω

S

µ

f = 1.0 MHz BANDW IDTH = 200kHz

6.0 dB

Noise Figure vs Frequency

0.0001 0.001 0.01 0.1 1 10 100

0

2

4

6

8

10

f - FREQUENCY (MHz)

NF - NOI S E FI GU RE ( d B)

V = 5.0V

CE

I = 200 µA, R = 10 k

Ω

C

S

I = 1.0 mA, R = 500

Ω

C

S

I = 100 µA, R = 10 k

Ω

C

S

I = 1.0 mA, R = 5.0 k

Ω

C

S

BC846A / BC846B / BC847A / BC847B / BC847C

NPN General Purpose Amplifier

(continued)