Fairchild Semiconductor BC81725, BC81740 Datasheet
BC817-25
BC817-40
C
BC817-25 / BC817-40
Discrete POWER & Signal
Technologies
E
SOT-23
Mark: 6B. / 6C.
B
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.2 A.
Sourced from Process 38.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CES
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 45 V
Collector-Base Voltage 50 V
Emitter-Base Volta ge 5.0 V
Collector Current - Continuous 1.5 A
Operating and Storage Junction Temperature Range -55 to +150
C
°
Symbol Characteristic Max Units
*BC817-25 / BC817-40
P
D
R
θ
JA
Total Device Dissipation
Derate above 25°C
Thermal Resistan ce, Junction to Ambien t 357
350
2.8
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
ã 1997 Fairchild Semiconductor Corporation
mW
mW/°C
C/W
°
(BR)
(BR)
(BR)
µ
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
CEO
V
CES
V
EBO
I
CBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
Collector-Emitter Breakdo wn Volta ge IC = 10 mA, IB = 045V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Vo ltage
I
= 100 µA, IE = 0
C
I
= 10 µA, IC = 0
E
Collector-Cutoff Current VCB = 20 V
V
= 20 V, TA = 150°C
CB
DC Current Gain IC = 100 mA, VCE = 1.0 V
- 25
- 40
= 500 mA, VCE = 1.0 V
I
Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 0.7 V
)
C
50 V
5.0 V
100
5.0
160
250
400
600
40
nA
A
Base-Emitter On Volta g e IC = 500 mA, VCE = 1.0 V 1.2 V
BC817-25 / BC817-40
Typical Characteristics
T ypical Pulsed Current Gain
vs Collector Current
500
V = 5V
CE
125 °C
25 °C
- 40 ºC
0
0.001 0.01 0.1 1 2
C
I - COLLECTOR CURRENT (A)
h - TYPICAL PULSED CURRENT GAIN
400
300
200
100
FE
Collector-Emitter Saturation
Voltage vs Collector Current
0.6
β
= 10
0.5
C
0.4
0.3
0.2
0.1
0
0.01 0.1 1 3
- COLLECTOR-EMITTER VOLTAGE (V)
CESAT
I - COLLECTOR CURRE NT (A)
C
125 º
25°C
- 40 ºC
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