Fairchild Semiconductor BC80716 Datasheet
BC807-16 / BC807-25 / BC807-40
BC807-16
BC807-25
BC807-40
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at currents to 1.0 A. Sourced from Process 78.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
*BC807-16 / -25 / -40
P
D
Total De vice Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
R
θ
JA
Thermal Resistance, Junction to Ambie n t 357
°
C/W
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 45 V
V
CES
Collector-Base Voltage 50 V
V
EBO
Emitter-Base Volta ge 5.0 V
I
C
Collector Current - Continuous 1.2 A
TJ, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°
C
C
B
E
SOT-23
Mark: 5A. / 5B. / 5C.
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Discrete POWER & Signal
Technologies
ã 1997 Fairchild Semiconductor Corporation
BC807-16 / BC807-25 / BC807-40
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
ON CHARACTERISTICS
h
FE
DC Current Gain IC = 100 mA, VCE = 1.0 V
- 16
- 25
- 40
I
C
= 500 mA, VCE = 1.0 V
100
160
250
40
250
400
600
V
CE(
sat
)
Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 0.7 V
V
BE(on)
Base-Emitter On Voltage IC = 500 mA, VCE = 1.0 V 1.2 V
V
(BR)
CEO
Collector-Emitter Breakdo wn Volta ge IC = 10 mA, IB = 045V
V
(BR)
CES
Collector-Base Breakdown Voltage
I
C
= 100 µA, IE = 0
50 V
V
(BR)
EBO
Emitter-Base Break down Vol t age
I
E
= 10 µA, IC = 0
5.0 V
I
CBO
Collector-Cutoff Current VCB = 20 V
V
CB
= 20 V, TA = 150°C
100
5.0
nA
µ
A
PNP General Purpose Amplifier
(continued)
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
0.01 0.1 1 1.5
0
0.1
0.2
0.3
0.4
0.5
0.6
I - COLLECTOR CURRENT (A)
- COLLECTOR-EMITTER VOLTAGE (V)
CESAT
C
β
= 10
125 ºC
- 40 ºC
25 °C
Typical Pulsed Current Gain
vs Collector Current
0.01 0.1 1
0
100
200
300
400
I - COLLECTOR CURRENT (A)
h - TYPICAL PULSED CURRENT GAIN
FE
- 40 ºC
25 °C
C
V = 5V
CE
125 °C
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