Fairchild Semiconductor BC638, BC636 Datasheet
BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER APPLICATIONS
• Complement to BC635/637/639
ABSOLUTE MAXIMUM RATINGS (TA=25°°C)
Characteristic Symbol Rating Unit
TO-92
Collector Emitter Voltage : BC636
at RBE=1Kohm : BC638
: BC640
Collector Emitter Voltage : BC636
: BC638
: BC640
Collector Emitter Voltage : BC636
: BC638
V
CER
-100
V
CES
-100
V
CEO
: BC640
Emitter Base Voltage
Collector Current
Peak Collector Current
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
-1.5
-100
150
-65 ~ 150
ELECTRICAL CHARACTERISTICS (TA=25°°C)
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector-Emitter Breakdown Voltage
: BC636
: BC638
: BC640
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
: BC635
: BC637/BC639
Collector Emitter Saturation Voltage
Base Emitter On Voltage
Current Gain Bandwidth Product
BV
I
I
h
V
V
f
CBO
EBO
FE
T
CEO
IC= -10mA, IB=0
VCB= -30V, IE=0
VEB= -5V, IC=0
VCE= -2V, IC= -5mA
VCE= -2V, IC= -150mA
VCE= -2V, IC= -500mA
(sat)
CE
BE
IC= -500mA, IB= -50mA
(on)
VCE= -2V, IC= -500mA
VCE= -5V, IC= -10mA, f=50MHz
-45
-60
-45
-60
-45
-60
-80
-5
-1
V
V
V
V
V
V
V
V
V
V
A
A
mA
1
W
°C
°C
1. Emitter 2. Collector 3. Base
-45
-60
-80
-0.1
25
40
40
25
-0.1
250
160
-0.5
100
-1
V
V
V
µA
µA
V
V
MHz
Rev. B
1999 Fairchild Semiconductor Corporation
BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR
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