Fairchild Semiconductor BC637, BC639, BC635 Datasheet
BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER APPLICATIONS
• Complement to BC635/638/640
ABSOLUTE MAXIMUM RATINGS (TA=25°°C)
Characteristic Symbol Rating Unit
Collector Emitter Voltage : BC635
at RBE=1Kohm : BC637
: BC639
Collector Emitter Voltage : BC635
: BC637
: BC639
Collector Emitter Voltage : BC635
: BC637
: BC639
Emitter Base Voltage
Collector Current
Peak Collector Current
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
V
CER
45
60
100
V
CES
45
60
100
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
45
60
80
5
1
1.5
100
1
150
-65 ~ 150
• PW=5ms, Duty Cycle=10%
ELECTRICAL CHARACTERISTICS (TA=25°°C)
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector-Emitter Breakdown Voltage
: BC635
: BC736
: BC639
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
:BC635
: BC637/BC639
Collector Emitter Saturation Voltage
Base Emitter On Voltage
Current Gain Bandwidth Product
BV
CEO
I
CBO
I
EBO
h
FE
VCE(sat)
VBE(on)
f
T
IC=10mA, IB=0
VCB=30V, IE=0
VEB=5V, IC=0
VCE=2V, IC=5mA
VCE=2V, IC=150mA
VCE=2V, IC=500mA
IC=500mA, IB=50mA
VCE=2V, IC=500mA
VCE=5V, IC=10mA, f=50MHz
mA
W
°C
°C
TO-92
V
V
V
V
V
V
V
V
V
V
A
A
1. Emitter 2. Collector 3. Base
0.1
0.1
0.5
V
V
V
µA
µA
V
V
1
MHz
45
60
80
25
40
40
25
250
160
100
Rev. B
1999 Fairchild Semiconductor Corporation
BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR
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