Fairchild Semiconductor BC560, BC559, BC558, BC556, BC557 Datasheet
PNP EPITAXIAL
BC556/557/558/559/560 SILICON TRANSISTOR
SWITCHING AND AMPLIFIER
• HIGH VOLTAGE: BC556, V
• LOW NOISE: BC559, BC560
• Complement to BC546 ... BC 550
ABSOLUTE MAXIMUM RATINGS (TA=25°°C)
Characteristic Symbol Rating Unit
CEO
= -65V
TO-92
Collector-Base Capacitance
: BC556
: BC557/560
: BC558/559
Collector-Emitter Voltage
: BC556
: BC557/560
: BC558/559
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
V
CBO
-80
-50
-30
V
CEO
-65
-45
V
EBO
I
C
P
C
T
J
T
STG
-30
-5
-100
500
150
-65 ~ 150
ELECTRICAL CHARACTERISTICS (TA=25°°C)
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector Cut-off Current
DC Current Gain
Collector Emitter Saturation Voltage
Collector Base Saturation Voltage
Base Emitter On Voltage
Current Gain Bandwidth Product
Collector Base Capacitance
Noise Figure : BC556/557/558
: BC559/560
: BC559
: BC560
I
h
V
V
V
f
C
NF
NF
CBO
T
FE
CE
BE
BE
CBO
(sat)
(on)
(on)
V
V
V
V
V
V
V
mA
mW
°C
°C
VCB= -30V, IE=0
VCE= -5V, IC=2mA
IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
VCE= -5V, IC= -2mA
VCE= -5V, IC= -10mA
VCE= -5V, IC= -10mA
VCB= -10V, f=1MHz
VCE= -5V, IC= -200µA
f=1KHz, RG=2KΩ
VCE= -5V, IC= -200µA
RG=2KΩ
f=30~15000MHz
1. Collector 2. Base 3. Emitter
110
-250
-700
-90
-15
800
-300
-650
-900
-660
150
-750
-800
-600
6
2
10
1
1.2
1.2
4
4
2
nA
mV
mV
mV
mV
mV
mV
MHz
pF
dB
dB
dB
dB
h
CLASSIFICATION
FE
Classification A B C
h
FE
110-220 200-450 420-800
Rev. B
1999 Fairchild Semiconductor Corporation
PNP EPITAXIAL
BC556/557/558/559/560 SILICON TRANSISTOR
Loading...