ZXTN2007G
30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
SUMMARY
BVCEO = 30V : RSAT = 28m ; IC = 7A
DESCRIPTION
Packaged in the SOT223 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.
FEATURES
• Extemely low equivalent on-resistance; RSAT = 28m at 6.5A
•7 amps continuous current
•Up to 20 amps peak current
•Very low saturation voltages
•Excellent hFE characteristics up to 20 amps
APPLICATIONS
•DC - DC converters
•MOSFET gate drivers
•Charging circuits
•Power switches
•Motor control
ORDERING INFORMATION
DEVICE |
REEL |
TAPE |
QUANTITY PER |
|
SIZE |
WIDTH |
REEL |
|
|
|
|
ZXTN2007GTA |
7” |
12mm |
1,000 units |
|
|
|
|
ZXTN2007GTC |
13" |
embossed |
4,000 units |
|
|||
|
|
|
|
SOT223
PINOUT
TOP VIEW
DEVICE MARKING
ZXTN 2007
ISSUE 2 - MAY 2006
1 |
SEMICONDUCTORS |
ZXTN2007G
ABSOLUTE MAXIMUM RATINGS
PARAMETER |
SYMBOL |
LIMIT |
UNIT |
|
|
|
|
Collector-base voltage |
BVCBO |
80 |
V |
Collector-emitter voltage |
BVCEO |
30 |
V |
Emitter-base voltage |
BVEBO |
7 |
V |
Continuous collector current (a) |
IC |
7 |
A |
Peak pulse current |
ICM |
20 |
A |
Power dissipation at TA =25°C (a) |
PD |
3.0 |
W |
Linear derating factor |
|
24 |
mW/°C |
|
|
|
|
Power dissipation at TA =25°C (b) |
PD |
1.6 |
W |
Linear derating factor |
|
12.8 |
mW/°C |
|
|
|
|
Operating and storage temperature range |
Tj, Tstg |
-55 to +150 |
°C |
THERMAL RESISTANCE
PARAMETER |
SYMBOL |
VALUE |
UNIT |
|
|
|
|
Junction to ambient (a) |
R JA |
42 |
°C/W |
Junction to ambient (b) |
R JA |
78 |
°C/W |
NOTES
(a)For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b)For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 2 - MAY 2006
SEMICONDUCTORS |
2 |
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