Datasheet VN750, VN750S, VN750-B5 Datasheet (SGS Thomson Microelectronics)

VN750



TYPE R

DS(on)

I

OUT

V

CC

VN750
VN750S

60 mΩ 6 A 36 V

VN750-B5

■ CMOS COMPATIBLE INPUT

■ ON STATE OPEN LOAD DETECTION

■ OFF STATE OPEN LOAD DETECTION

■ SHORTED LOAD PROTECTION

■ UNDERVOLTAGE AND OVERVOLTAGE

SHUTDOWN

■ PROTECTION AGAINST LOSS OF GROUND

■ VERY LOW STAND-BY CURRENT

■ REVERSE BATTERY PROTECTION (*)

DESCRIPTION

The VN750, VN750S, VN750-B5 are a monolithic
device designed in STMicroelectronics VIPower
Technology, intended for driving any kind of load
with one side connected to ground.
Active V

pin voltage clamp protects the device

CC

against low energy spikes (see ISO7637 transient
compatibility table). Active current limitation

/ VN750S / VN750-B5

HIGH SIDE DRIVER

SO-8

ORDER CODES :

PENTAWATT
SO-8
P2PAK

combined with thermal shutdown and automatic
restart protect the device against overload.

The device detects open load condition both is on
and off state. Output shorted to VCCis detected in

the off state.Device automatically turns off in case
of ground pin disconnection.

PENTAWATT

P2PAK

VN750
VN750S
VN750-B5

BLOCK DIAGRAM

V

CC

V

CC

CLAMP

GND

INPUT

STATUS

(*) See application schematic at page 8

OVERTEMPERATURE

DETECTION

LOGIC

January 2000 1/15

OVERVOLTAGE

DETECTION

UNDERVOLTAGE

DETECTION

Power CLAMP

DRIVER

CURRENT LIMITER

ON STATE OPENLOAD

DETECTION

OFF STATE OPENLOAD

AND OUTPUT SHORTED TO V

DETECTION

OUTPUT

CC

1

VN750 / VN750S / VN750-B5

ABSOLUTE MAXIMUM RATING

Symbol Parameter

V

CC

-V

-I

gnd

I

OUT

-I

OUT

I

IN

I

STAT

V

ESD

P

T

T

T

stg

CONNECTION DIAGRAM (TOP VIEW)

DC Supply Voltage 41 V
Reverse DC Supply Voltage - 0.3 V

CC

DC Reverse Ground Pin Current - 200 mA
DC Output Current Internally Limited A
Reverse DC Output Current - 6 A
DC Input Current +/- 10 mA
DC Status Current +/- 10 mA
Electrostatic Discharge (R=1.5KΩ; C=100pF) 2000 V
Power Dissipation TC=25°C 3.1 42 42 W

tot

Junction Operating Temperature Internally Limited °C

j

Case Operating Temperature - 40 to 150 °C

c

Storage Temperature - 55 to 150 °C

Value

SO-8 PENTAWATT P2PAK

Unit

V

CC

OUTPUT
OUTPUT
V

CC

5

8

4

N.C.
STATUS
INPUT

1

GND

SO-8

CURRENT AND VOLTAGE CONVENTIONS

I

IN

INPUT

I

STAT

STATUS

V

IN

V

STAT

V

CC

GND

OUTPUT

I

GND

P2PAK

PENTAWATT

I

OUT

V

OUT

I

CC

OUTPUT
STATUS

V

CC

INPUT
GND

V

CC

5
4

3
2

1

2/15

1

THERMAL DATA

Symbol Parameter

R

thj-pins

R

thj-amb

R

thj-case

Thermal Resistance Junction-pins Max 40 - - °C/W
Thermal ResistanceJunction-ambient
Thermal Resistance Junction-case

Max
Max

VN750 / VN750S / VN750-B5

Value

S0-8 PENTAWATT P2PAK

120 60 60 °C/W

-33°C/W

Unit

ELECTRICAL CHARACTERISTICS(8V<V

<36V; -40°C<Tj<150°C unless otherwise specified)

CC

POWER

Symbol Parameter Test Conditions Min Typ Max Unit

V

CC

V

USD

V

USDhyst

V

OV

R

ON

I

I

L(off1)

I

L(off2)

SWITCHING (V

Symbol Parameter TestConditions Min Typ Max Unit

t

d(on)

t

d(off)

dV

OUT

dt

(on)

dV

OUT

dt

(off)

Operating Supply Voltage 5.5 13 36 V
Under Voltage Shut-down 3 4 5.5 V
Under Voltage Shut-down

Hysteresis

0.5 V

Overvoltage Shut-down 36 (*) 48 V

=2A; Tj=25°C;VCC>8V

I

On State Resistance

SupplyCurrent

S

Off State Output Current VIN=V
Off State Output Current VIN=0V; V

=13V)

CC

Turn-on Delay Time

Turn-off Delay Time

/

Turn-on Voltage Slope

/

Turn-off Voltage Slope

OUT

=2A; VCC>8V

I

OUT

Off State; V

CC

=13V

On State; VCC=13V

=0V 0 (*) 50 µA

OUT

=3.5V -75 0 µA

OUT

R

=6.5Ω from VINrising edge to

L

=1.3V

V

OUT

RL=6.5Ω from VINfalling edge to
V

=11.7V

OUT

RL=6.5Ω from V
V

=10.4V

OUT

RL=6.5Ω from V
V

=1.3V

OUT

=1.3V to

OUT

=11.7V to

OUT

(*)
10

2

40 µs

30 µs

(*) V/µs

(*) V/µs

60

120

25

3.5

mΩ
mΩ

µA

mA

INPUT PIN

Symbol Parameter Test Conditions Min Typ Max Unit

V

I

V

I

IH

V

hyst

V

ICL

(*) See curves at pages 9, 10, 11

Input Low Level (*) 1.25 V

IL

Low Level Input Current VIN=1.25V 1 (*) µA

IL

Input High Level 3.25 (*) V

IH

High Level Input Current VIN=3.25V (*) 10 µA
Input Hysteresis Voltage 0.5 (*) V

Input Clamp Voltage

=1mA

I

IN

IIN=-1mA

6.5 (*)

-0.7

8.5 V
V

3/15

1

VN750 / VN750S / VN750-B5

ELECTRICAL CHARACTERISTICS(continued)

STATUS PIN

Symbol Parameter Test Conditions Min Typ Max Unit

V

STAT

I

LSTAT

C

STAT

V

SCL

PROTECTIONS

Symbol Parameter Test Conditions Min Typ Max Unit

T

TSD

T

T

hyst

t

SDL

I

lim

V

demag

Status Low Output Voltage I
Status Leakage Current Normal Operation V
Status Pin Input

Capacitance
Status Clamp Voltage

=1.6mA (*) 0.5 V

STAT

Normal Operation V

=1mA

I

STAT

I

=-1mA

STAT

=5V (*) 10 µA

STAT

=5V 100 pF

STAT

6.5 (*)

-0.7

Shut-down Temperature 150 175 200 °C
Reset Temperature 135 °C

R

Thermal Hysteresis 7 15 °C
Status delay in overload

condition
Current limitation
Turn-off Output Clamp

Voltage

T

j>Tjsh

9V<V
5V<V

I

<36V

CC

<36V

CC

=2A; VIN=0V; L=6mH VCC-41 VCC-48 VCC-55 V

OUT

691515A

8.5 V

20 µs

V

A

OPENLOAD DETECTION

Symbol Parameter Test Conditions Min Typ Max Unit

I

OL

t

DOL(on)

Openload ON State
Detection Threshold
Openload ON State
Detection Delay
Openload OFF State

OL

Voltage Detection

V

Threshold

t

DOL(off)

(*) See curves at pages 9, 10, 11

Openload Detection Delay
at Turn Off

OPEN LOAD STATUSTIMING (with external pull-up)

V

OUT>VOL

V

IN

V

STAT

=5V 50 (*) 200 mA

V

IN

=0A 200 µs

I

OUT

VIN=0V 1.5 (*) 3.5 V

1000 µs

OVER TEMP STATUSTIMING

I

OUT<IOL

Tj>T

jsh

V

IN

V

STAT

4/15

2

t

DOL(off)

t

DOL(on)

t

SDL

t

SDL

1

Switching time Waveforms

V

OUT

dV

/dt

OUT

(on)

V

IN

t

d(on)

80%

10%

t

d(off)

VN750 / VN750S / VN750-B5

90%

/dt

dV

OUT

(off)

t

t

TRUTHTABLE

CONDITIONS INPUT OUTPUT STATUS

Normal Operation

Current Limitation

Overtemperature

Undervoltage

Overvoltage

Output Voltage > V

Output Current < I

OL

OL

L

H

L

H

L

H

L

H

L

H

L

H

L

H

L

H

L

X

L
L

L
L

L
L

H
H

L

H

H
H

H
H

H

L

X
X

H
H

L

H
H

L

5/15

1

VN750 / VN750S / VN750-B5

ELECTRICAL TRANSIENT REQUIREMENTS ON VCCPIN

ISO T/R 7637/1

Test Pulse

1 -25 V -50 V -75 V -100 V 2 ms 10 Ω

2 +25 V +50 V +75 V +100 V 0.2 ms 10 Ω
3a -25 V -50 V -100 V -150 V 0.1 µs50Ω
3b +25 V +50 V +75 V +100 V 0.1µs50Ω

4 -4V -5 V -6 V -7 V 100 ms,0.01 Ω

5 +26.5 V +46.5 V +66.5 V +86.5 V 400 ms, 2 Ω

ISO T/R 7637/1

Test Pulse

1CCCC

2CCCC
3aCCCC
3bCCCC

4CCCC

5C E E E

CLASS CONTENTS

C All functions of the device are performed as designed after exposure to disturbance.
E One or more functions of the device is not performed as designed after exposure todisturbance

and cannot be returned to proper operation without replacing the device.

I II III IV

I II III IV

TEST LEVELS

Delays and
Impedance

TEST LEVELS RESULTS

6/15

1

Figure1: Waveforms

INPUT
LOAD VOLTAGE
STATUS

V

CC

INPUT

LOAD VOLTAGE
STATUS

V

CC

INPUT
LOAD VOLTAGE

STATUS

NORMAL OPERATION

UNDERVOLTAGE

V

USD

OVERVOLTAGE

V

CC<VOV

V

USDhyst

undefined

VCC>V

VN750 / VN750S / VN750-B5

OV

INPUT
LOAD VOLTAGE

STATUS

INPUT
LOAD VOLTAGE
STATUS

T

j

INPUT

LOAD CURRENT
STATUS

OPEN LOAD with external pull-up

V

OUT>VOL

V

OL

OPEN LOAD without external pull-up

T
T

TSD
R

OVERTEMPERATURE

7/15

1

1

VN750 / VN750S / VN750-B5

APPLICATION SCHEMATIC

+5V

µC

R

R

prot

prot

+5V

STATUS

INPUT

GND PROTECTION NETWORK AGAINST
REVERSE BATTERY

Solution 1: Resistor in the ground line (R
can be used with any type of load.

The following is an indication on how to dimension the

resistor.

R

GND

1) R

2) R

where -I
be found in the absolute maximum r ating section of the

≤ 600mV / (I

GND

≥ (−VCC) / (-I

GND

is theDC reverse groundpin current and can

GND

S(on)max

)

GND

).

device’s datasheet.
Power Dissipation in R

battery situa tions) is:

= (-VCC)2/R

P

D

GND

(when VCC<0: during reverse

GND

This resistor can be share d amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where I
sum of the maximum on-state c urrents of the different

S(on)max

devices.
Please note that if the microprocessor ground i s no t

common with the device ground then the R
produce a shift (I
and the status output values. This shift w ill vary

S(on)max*RGND

) in the i nput thresholds

depending on manydevices are ON in the caseof several
high side dr ivers sharing the same R

GND

If thecalculated power dissipation leads to a large resistor
or several device s h ave to share the same resistor then
the ST sugg ests to utilize Solution 2 (see below).

Solution 2: A diode (D
A resistor ( R

if the device will be d riving an inductive load.

D

GND

=1kΩ) should be inserted in parallel to

GND

) in the ground line.

GND

only). This

GND

becomes the

.

GND

will

V

CC

D

ld

OUTPUT

GND

R

V

GND

GND

D

GND

This small signal diode c an be safely shared amongst
several different HSD. Also in this case, the pre sence of
the grou nd network will produce a shift (j 600mV) in the
input threshold and the s tatus output values if the
microprocessor ground is not common with the device
ground. This shift wil l not var y if more than o ne HSD
shares the same diode/resistor ne twork.

LOAD DUMP PROT ECTION

Dldis necessary (Transil or MOV) if the load dump peak
voltage exceeds V
the device will be subject to transients on the V
are greater than the ones sho wn in the ISO T/R 7637/1
table.

max DC rating. The same applies if

CC

CC

µC I/Os PROTECTION:

If a ground protection network is used and ne gative
transients are present on the V
be pulled negative. ST suggests to insert a resistor (R
in line to prevent the µC I/Os pins to latch-up.

The value of these resistors is acompromise between the
leakage current of µ C and th e curr ent required by the
HSD I/Os (Input levels compatibility) with the latch-up limit
of µ C I/Os.

≤ R

-V

CCpeak/Ilatchup

prot

≤ (V

Calculation example:

CCpeak

prot

= - 100V and I
≤ 65kΩ.

value is 10kΩ.

prot

For V
5kΩ ≤ R
Recommended R

line, the control pins will

CC

OHµC-VIH-VGND

≥ 20mA; V

latchup

)/I

OHµC

linethat

IHmax

≥ 4.5V

prot

)

8/15

1

1

VN750 / VN750S / VN750-B5

Off State Output Current

L(off1) (µA)

I

2.5

2.0

1.5

1.0

0.5

0.0

-0.5

-1.0

Off state
Vcc=36V

V

=V

IN

OUT

0

=0V

25 50 75 100 125 150-25-50

Input Clamp Voltage

VICL (V)

10.0

9.5

9.0

8.5

8.0

7.5

7.0

6.5

6.0

5.5

5.0

IIN=1mA

25 50 75 100 125 150-25-50

0

Tc(°C)

Tc (°C)

High Level Input Current

IIH(µA)

11
10

9
8
7
6
5
4
3
2
1
0

V

IN

=3.25V

0 25 50 75 100 125 150-25-50

Status Leakage Current

LSTAT

I

(µA)

0.250

0.200

0.150

0.100

0.050

0.000

-0.050

-0.100

Vstat=5V

0 25 50 75 100 125 150-25-50

Tc(°C)

Tc(°C)

Status Low Output Voltage

VSTAT (V)

0.550

0.500

0.450

0.400

0.350

0.300

0.250

0.200

0.150

0.100

Istat=1.6mA

0 25 50 75 100 125 150-25-50

Tc(°C)

Status Clamp Voltage

V

SCL (V)

9.5

9.0

8.5

8.0

7.5

7.0

6.5

6.0

5.5

Istat=1mA

0 25 50 75 100 125 150-25-50

Tc(°C)

9/15

1

VN750 / VN750S / VN750-B5

On State Resistance Vs T

case

RON (mOhm)

120
110
100

90
80
70
60
50
40
30
20
10

OUT

I

=2A

Vcc=8V; 13V; 36V

0 25 50 75 100 125 150-25-50

Openload On State Detection Threshold

IOL (mA)

220
200
180
160
140
120
100

80
60
40
20

Vcc=13V
V

IN=5V

0 25 50 75 100 125 150-25-50

Tc(°C)

Tc(°C)

On State Resistance Vs V

CC

RON(mOhm)

130
120
110
100

90
80
70
60
50
40
30
20

Iout=2A
Tc=-40°C; 25°C; 125°C;150°C

5 101520253035

Input High Level

IH

V

(V)

3.3

3.2

3.1

3.0

2.9

2.8

2.7

2.6

2.5
0 25 50 75 100 125 150-25-50

150°C
125°C

25°C

-40°C

Vcc (V)

Tc(°C)

Input Low Level

IL

(

V

V)

2.1

2.0

1.9

1.8

1.7

1.6

1.5

1.4

1.3

1.2

1.1
0 25 50 75 100 125 150-25-50

10/15

1

Tc(°C)

Input Hysteresis Voltage

HYST (

V

V)

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4
0 25 50 75 100 125 150-25-50

Tc(°C)

1

VN750 / VN750S / VN750-B5

Overvoltage Shutdown

VOV(V)

46
45
44
43
42
41
40
39
38
37
36
35

0 25 50 75 100 125 150-25-50

Turn-on Voltage Slope

dV

OUT/dt(on) (V/ms)

325
300
275
250
225
200
175
150
125
100

75
50

Rl=6.5Ohm

0 25 50 75 100 125 150-25-50

Tc(°C)

Tc(°C)

Openload Off State Voltage Detection Threshold

VOL(V)

3.50

3.25

3.00

2.75

2.50

2.25

2.00

1.75

1.50

1.25

VIN=0V

0 25 50 75 100 125 150-25-50

Tc(°C)

Turn-off Voltage Slope

dV

/dt(off) (V/ms)

OUT

450
400
350
300
250
200
150
100

50

0

Rl=6.5Ohm

0 25 50 75 100 125 150-25-50

Avg

Tc(°C)

11/15

1

1

1

VN750 / VN750S / VN750-B5

SO-8 MECHANICAL DATA

DIM.

A 1.75 0.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033

b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.019

c1 45 (typ.)

D 4.8 5 0.188 0.196

E

e 1.27 0.050
e3 3.81 0.150

F 3.8 4 0.14 0.157

L 0.4 1.27 0.015 0.050

M 0.6 0.023

S 8 (max.)
L1 0.8 1.2 0.031 0.047

MIN. TYP MAX. MIN. TYP. MAX.

5.8

mm. inch

6.2 0.228 0.244

12/15

1

1

1

VN750 / VN750S / VN750-B5

PENTAWATT (VERTICAL) MECHANICAL DATA

DIM.

A 4.8 0.189

C 1.37 0.054
D 2.4 2.8 0.094 0.110

D1 1.2 1.35 0.047 0.053

E 0.35 0.55 0.014 0.022

F 0.8 1.05 0.031 0.041
F1 1 1.4 0.039 0.055

G 3.2 3.4 3.6 0.126 0.134 0.142

G1 6.6 6.8 7 0.260 0.268 0.276

H2 10.4 0.409
H3 10.05 10.4 0.396 0.409

L 17.85 0.703
L1 15.75 0.620
L2 21.4 0.843
L3 22.5 0.886
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260

M 4.5 0.177

M1 4 0.157

Diam. 3.65 3.85 0.144 0.152

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

13/15

1

VN750 / VN750S / VN750-B5

P2PAK MECHANICAL DATA

DIM.

A 4.30 4.80
A2 0.03 0.23

C 1.17 1.37
D 2.40 2.80

D1 8.95 9.35

E 0.35 0.55

F 0.80 1.05

G 3.20 3.60
G1 6.60 7.00
H2 10.40

L
L2 1.27 1.40
L3 1.30 1.70

R

V2 0d 8d

MIN. TYP MAX. MIN. TYP. MAX.

13.59

mm. inch

14.39

0.30

14/15

1

VN750 / VN750S / VN750-B5

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