The VN610SP-E is a monolithic device made
using STMicroelectronics™ VIPower™ M0-3
technology. It is intended for driving resistive or
inductive loads with one side connected to
ground.
Active V
against low energy spikes (see ISO7637 transient
compatibility table). This device integrates an
analog current sense which delivers a current
proportional to the load current (according to a
known ratio).
Active current limitation combined with thermal
shutdown and automatic restart protect the device
against overload. Device automatically turns off in
case of ground pin disconnection.
vs PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . . . . . . 20
4/27Doc ID 10889 Rev 4
Page 5
VN610SP-EBlock diagram and pin description
1 Block diagram and pin description
Figure 1.Block diagram
V
CC
V
CC
CLAMP
DRIVER
GND
LOGIC
INPUT
OVERTEMP.
Figure 2.Configuration diagram (top view)
GROUND
INPUT
C. SENSE
N.C.
N.C.
6
7
8
9
10
OVERVOLTAGE
UNDERVOLTAGE
PwCLAMP
I
LIM
V
DSLIM
I
OUT
5
4
3
2
1
OUTPUT
K
CURRENT
SENSE
OUTPUT
OUTPUT
OUTPUT
OUTPUT
OUTPUT
11
V
CC
Table 2.Suggested connections for unused and not connected pins
Connection / pinCurrent senseN.C.OutputInput
FloatingXXX
To ground
Through 1 KΩ
resistor
Doc ID 10889 Rev 45/27
X
Through 10 KΩ
resistor
Page 6
Electrical specificationsVN610SP-E
2 Electrical specifications
Figure 3.Current and voltage conventions
I
S
V
CC
I
OUT
I
SENSE
V
GND
OUTPUT
I
GND
I
IN
V
IN
INPUT
CURRENT SENSE
SENSE
V
F
V
OUT
V
CC
2.1 Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality document.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
-V
-I
GND
I
OUT
-I
V
CSENSE
V
DC supply voltage41V
CC
Reverse DC supply voltage- 0.3V
CC
DC reverse ground pin current- 200mA
DC output currentInternally limitedA
Reverse DC output current- 50A
OUT
DC input current +/- 10mA
I
IN
Current sense maximum voltage
Electrostatic discharge (human body model: R = 1.5KΩ;
C = 100pF)
1. When mounted on a standard single-sided FR-4 board with 0.5 cm2 of Cu (at least 35 µm thick).
2. When mounted on a standard single-sided FR-4 board with 6 cm2 of Cu (at least 35 µm thick).
Thermal resistance junction-case (max)0.9°C/W
Thermal resistance junction-ambient (max)50.9
= 13.5V; T
bat
= 150ºC; IL = 75A)
jstart
(1)
193mJ
(2)
36
°C/W
Doc ID 10889 Rev 47/27
Page 8
Electrical specificationsVN610SP-E
2.3 Electrical characteristics
Values specified in this section are for 8V < V
< 36V; -40°C < Tj < 150°C, unless
CC
otherwise stated. Per each channel.
Table 5.P owe r
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
V
R
V
I
L(off1)
I
L(off2)
I
L(off3)
I
L(off4)
1. V
V
Operating supply
CC
voltage
Undervoltage shutdown345.5V
USD
Overvoltage shutdownSee
OV
On-state resistance
ON
Clamp voltageI
clamp
I
Supply current
S
Off-state output currentV
Off-state output currentV
Off-state output current
Off-state output current
and VOV are correlated. Typical difference is 5V.
clamp
(1)
I
= 15A; Tj = 25°C
OUT
= 15A; Tj = 150°C
I
OUT
I
OUT
CC
= 9A; V
= 20mA
(1)
CC
= 6V
Off-state; VCC=13V; VIN=V
Off-state; V
=25°C
T
j
On-state; V
= 0A; R
I
OUT
= V
IN
= 0V; V
IN
V
= V
IN
=125°C
T
j
V
IN =VOUT
= 25°C
T
j
=13V; VIN=V
CC
= 5V; V
IN
SENSE
= 0V050µA
OUT
= 3.5V-750µA
OUT
=0V; VCC=13V;
OUT
= 0V; V
CC
= 3.9kΩ
= 13V;
CC
= 13V;
OUT
OUT
=0V
=0V;
5.51336V
36V
414855V
10
20
35
101025
20
5
5µA
3µA
mΩ
mΩ
mΩ
µA
µA
mA
Table 6.Protections
(1)
SymbolParameterTest conditionsMin.Typ.Max.Unit
= 13V;
V
CC
5.5V < V
CC
< 36V
T
T
I
lim
TSD
T
R
HYST
DC short circuit current
Thermal shutdown
temperature
Thermal reset
temperature
Thermal hysteresis715°C
8/27Doc ID 10889 Rev 4
4575120
120
A
A
150175200°C
135°C
Page 9
VN610SP-EElectrical specifications
Table 6.Protections
(1)
(continued)
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
demag
V
1. To ensure long term reliability under heavy over-load or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
Table 7.VCC - output diode
Turn-off output voltage
clamp
Output voltage drop
ON
limitation
I
OUT
I
OUT
= 2A; V
= 1.5A
= 0V; L = 6mH VCC-41 VCC-48 VCC-55V
IN
Tj = -40°C...+150°C
50mV
SymbolParameterTest conditionsMin.Typ.Max. Unit
V
F
Table 8.Current sense (9 V ≤ VCC ≤ 16 V)
Forward on voltage- I
= 8A; Tj = 150°C--0.6V
OUT
(1)
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
dK
dK
K
1
1/K1
K
2
2/K2
K
3
I
OUT/ISENSE
Current sense ratio drift
I
OUT/ISENSE
Current sense ratio drift
I
OUT/ISENSE
= 1.5A; V
OUT
= -40°C...150°C
T
j
I
= 1.5A; V
OUT
= - 40°C...150°C
T
j
I
= 15A; V
OUT
= - 40°C
T
j
= 25°C...150°C
T
j
I
= 15A; V
OUT
= 25°C...150°C
T
j
I
= 45A; V
OUT
= -40°C
T
j
Tj = 25°C...150°C
SENSE
SENSE
SENSE
SENSE
SENSE
= 0.5V;
= 0.5V;
= 4V;
= 4V;
= 4V;
3300 4400 6000
-10+10%
4200
4400
4900
4900
6000
5750
-6+6%
4200
4400
4900
4900
5500
5250
dK
3/K3
I
SENSE0
V
SENSE
V
SENSEH
Current sense ratio drift
Analog sense current
Max analog sense
output voltage
Analog sense output
voltage in
overtemperature
condition
Doc ID 10889 Rev 49/27
= 45A; V
I
OUT
T
= 25°C...150°C
j
V
= 6...16V; I
CC
V
T
Off-state; V
On-state; V
V
R
V
R
V
= 0V;
SENSE
= -40°C...150°C
j
IN
IN
= 5.5V; I
CC
= 10kΩ
SENSE
> 8V, I
CC
SENSE
CC
OUT
= 10kΩ
= 13V; R
= 4V;
SENSE
OUT
= 0V
= 5V
OUT
= 0A;
= 7.5A;
-6+6%
0
0
3.5
= 15A;
5
= 3.9kΩ5.5V
SENSE
5
10µAµA
V
V
Page 10
Electrical specificationsVN610SP-E
Table 8.Current sense (9 V ≤ VCC ≤ 16 V)
(1)
(continued)
SymbolParameterTest conditionsMin.Typ.Max.Unit
Analog sense output
R
VSENSEH
impedance in
overtemperature
= 13V; Tj > T
V
CC
open
TSD
; Output
400Ω
condition
t
DSENSE
1. See Figure 4.
2. Current sense signal delay after positive input slope.
Table 9.Switching (VCC = 13 V)
Current sense delay
response
To 9 0% I
SENSE
(2)
500µs
SymbolParameterTest conditionsMin.Typ.Max. Unit
t
d(on)
t
d(off)
(dV
/dt)onTurn-on voltage slope RL = 0.87Ω-
OUT
(dV
/dt)
OUT
Turn-on delay time RL= 0.87Ω-50-µs
Turn-on delay time RL = 0.87Ω -50-µs
Turn-off voltage slope RL = 0.87Ω-
off
See
Figure 15
See
Figure 16
-V/µs
-V/µs
Table 10.Logic inputs
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
V
I(hyst)
V
Input low level voltage1.25V
IL
Low level input currentV
I
IL
Input high level voltage3.25V
IH
High level input currentV
I
IH
= 1.25V1µA
IN
= 3.25V10µA
IN
Input hysteresis voltage0.5V
= 1mA
Input clamp voltage
ICL
I
IN
I
IN
= - 1mA
66.8
- 0.7
8V
V
10/27Doc ID 10889 Rev 4
Page 11
VN610SP-EElectrical specifications
Figure 4.I
I
OUT/ISENSE
OUT/ISENSE
6500
6000
5500
5000
4500
4000
3500
3000
0246810121416
Table 11.Truth table
versus I
OUT
max.Tj=25...150°C
min.Tj=25...150°C
I
OUT
max.Tj=-40°C
typical value
min.Tj=-40°C
(A)
ConditionsInputOutputSense
Normal operation
Overtemperature
Under-voltage
Overvoltage
Short circuit to GND
Short circuit to V
CC
L
H
L
H
L
H
L
H
L
H
H
L
H
L
H
Nominal
L
L
V
SENSEH
L
L
L
L
L
L
L
(Tj>T
(T
TSD
j<TTSD
H
H
< Nominal
Negative output voltage clampLL0
0
0
0
0
0
0
0
) V
0
) 0
SENSEH
Doc ID 10889 Rev 411/27
Page 12
Electrical specificationsVN610SP-E
Figure 5.Switching characteristics
V
OUT
90%
t
f
dV
OUT
/dt
(off)
dV
OUT
80%
/dt
(on)
t
r
10%
t
I
SENSE
90%
INPUT
t
d(on)
t
DSENSE
t
d(off)
t
t
\
12/27Doc ID 10889 Rev 4
Page 13
VN610SP-EElectrical specifications
Table 12.Electrical transient requirements on VCC pin (part 1/3)
ISO T/R 7637/1
Test levels
test pulse
IIIIIIIV
1-25 V-50 V-75 V-100 V2 ms 10 Ω
2+25 V+50 V+75 V+100 V0.2 ms 10 Ω
3a-25 V-50 V-100 V-150 V0.1 µs 50 Ω
3b+25 V+50 V+75 V+100 V0.1 µs 50 Ω
4-4 V-5 V-6 V-7 V100 ms, 0.01
5+26.5 V+46.5 V+66.5 V+86.5 V400 ms, 2
Table 13.Electrical transient requirements on VCC pin (part 2/3)
ISO T/R 7637/1
test pulse
IIIIIIIV
Test levels results
1CCCC
2CCCC
3aCCCC
3bCCCC
4CCCC
Delays and
impedance
Ω
Ω
5C E E E
Table 14.Electrical transient requirements on VCC pin (part 3/3)
ClassContents
CAll functions of the device are performed as designed after exposure to disturbance.
E
One or more functions of the device is not performed as designed after exposure to
disturbance and cannot be returned to proper operation without replacing the device.
Doc ID 10889 Rev 413/27
Page 14
Electrical specificationsVN610SP-E
Figure 6.Waveforms
NORMAL OPERATION
INPUT
LOAD CURRENT
SENSE CURRENT
UNDERVOLTAGE
V
CC
INPUT
LOAD CURRENT
SENSE CURRENT
V
CC
INPUT
LOAD CURRENT
SENSE
V
USD
V
VCC > V
OV
USD
V
USDhyst
OVERVOLTAGE
V
OVhyst
INPUT
LOAD CURRENT
LOAD VOLTAGE
SENSE CURRENT
INPUT
LOAD VOLTAGE
LOAD CURRENT
SENSE CURRENT
T
j
INPUT
LOAD CURRENT
SENSE CURRENT
SHORT TO GROUND
SHORT TO V
<Nominal
T
TSD
T
R
OVERTEMPERATURE
I
SENSE=VSENSEH
CC
/(R
SENSE+RSENSEH
<Nominal
)
14/27Doc ID 10889 Rev 4
Page 15
VN610SP-EElectrical specifications
2.4 Electrical characteristics curves
Figure 7.Off-state output currentFigure 8.High level input current
Figure 9.Input low levelFigure 10. Input high level
Figure 11. Input clamp voltageFigure 12. Input hysteresis voltage
Doc ID 10889 Rev 415/27
Page 16
Electrical specificationsVN610SP-E
Figure 13. Overvoltage shutdownFigure 14. I
Figure 15. Turn-on voltage slopeFigure 16. Turn-off voltage slope
LIM
vs T
case
Figure 17. On-state resistance vs T
case
Figure 18. On-state resistance vs V
16/27Doc ID 10889 Rev 4
CC
Page 17
VN610SP-EApplication information
3 Application information
Figure 19. Application schematic
+5V
GND
GND
V
CC
OUTPUT
D
GND
R
prot
INPUT
R
μ
C
prot
R
SENSE
CURRENT SENSE
R
V
GND
3.1 GND protection network against reverse battery
This section provides two solutions for implementing a ground protection network against
reverse battery.
3.1.1 Solution 1: a resistor in the ground line (R
GND
only)
D
ld
This can be used with any type of load.
The following show how to dimension the R
1.R
2. R
where - I
≤ 600mV / (I
GND
≥ ( - VCC) / (- I
GND
is the DC reverse ground pin current and can be found in the absolute
GND
S(on)max
GND
)
)
GND
resistor:
maximum rating section of the device datasheet.
Power dissipation in R
P
= (- VCC)2/ R
D
GND
GND
(when V
< 0 during reverse battery situations) is:
CC
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
S(on)max
becomes the sum of the
maximum on-state currents of the different devices.
Please note that, if the microprocessor ground is not shared by the device ground, then the
R
produces a shift (I
GND
S(on)max
* R
) in the input thresholds and the status output
GND
values. This shift varies depending on how many devices are ON in the case of several highside drivers sharing the same R
.
GND
Doc ID 10889 Rev 417/27
Page 18
Application informationVN610SP-E
If the calculated power dissipation requires the use of a large resistor, or several devices
have to share the same resistor, then ST suggests using solution 2 below.
3.1.2 Solution 2: a diode (D
A resistor (R
= 1kΩ) should be inserted in parallel to D
GND
) in the ground line
GND
inductive load. This small signal diode can be safely shared amongst several different HSD.
Also in this case, the presence of the ground network produces a shift (j600mV) in the input
threshold and the status output values if the microprocessor ground is not common with the
device ground. This shift not varies if more than one HSD shares the same diode/resistor
network. Series resistor in INPUT and STATUS lines are also required to prevent that,
during battery voltage transient, the current exceeds the Absolute Maximum Rating. Safest
configuration for unused INPUT pin is to leave them unconnected, while unused SENSE pin
has to be connected to ground pin.
3.2 Load dump protection
Dld is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the
V
maximum DC rating. The same applies if the device is subject to transients on the VCC
CC
line that are greater than those shown in the ISO T/R 7637/1 table.
3.3 MCU I/O protection
If a ground protection network is used and negative transients are present on the VCC line,
the control pins is pulled negative. ST suggests to insert a resistor (R
the µC I/O pins from latching up.
if the device is driving an
GND
) in line to prevent
prot
The value of these resistors is a compromise between the leakage current of µC and the
current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of µC
I/Os:
- V
CCpeak
/ I
latchup
≤ R
prot
≤ (V
OHμC
- V
IH
- V
GND
) / I
IHmax
Example
For the following conditions:
V
CCpeak
I
latchup
V
OHμC
5kΩ ≤ R
Recommended values are:
R
prot
= - 100V
≥ 20mA
≥ 4.5V
prot
= 10kΩ
≤ 65kΩ.
18/27Doc ID 10889 Rev 4
Page 19
VN610SP-EApplication information
3.4 Maximum demagnetization energy (V
Figure 20. Maximum turn-off current versus load inductance
I
LM AX (A)
1000
100
10
1
0,010,1110100
L( mH)
= 13.5 V)
CC
A
B
C
(1)
A = single pulse at T
B= repetitive pulse at T
C= repetitive pulse at T
VIN, I
L
1. Values are generated with RL = 0Ω.
In case of repetitive pulses, T
the temperature specified above for curves B and C.
Demagnetization
= 150ºC
Jstart
= 100ºC
Jstart
= 125ºC
Jstart
(at beginning of each demagnetization) of every pulse must not exceed
jstart
Demagnetization
Demagnetization
t
Doc ID 10889 Rev 419/27
Page 20
Package and PCB thermal dataVN610SP-E
4 Package and PCB thermal data
4.1 PowerSO-10 thermal data
Figure 21. PowerSO-10 PC board
1. Layout condition of R
Cu thickness = 35µm, Copper areas: from minimum pad-lay-out to 8cm2).
Figure 22. R
thj-amb
and Zth measurements (PCB FR4 area = 58mm x 58mm, PCB thickness = 2mm,
th
vs PCB copper area in open box free air condition
(1)
RTHj_amb (°C/W)
55
50
Tj-Tamb=50°C
45
40
35
30
0246810
PCB Cu heatsink area (cm^2)
20/27Doc ID 10889 Rev 4
Page 21
VN610SP-EPackage and PCB thermal data
Figure 23. Thermal impedance junction ambient single pulse
ZTH (°C/W)
100
Footprint
2
6 cm
10
1
0.1
0.01
0.00010.0010.010.11101001000
Time (s)
Equation 1
Z
THδ
where
: pulse calculation formula
RTHδ Z
THtp
1 δ–()+⋅=
δtpT⁄=
Figure 24. Thermal fitting model of a single channel in PowerSO-10
Tj
C1
R1R2
Pd
C2
C3
R3
C4
R4
T_amb
C5
R5
C6
R6
Doc ID 10889 Rev 421/27
Page 22
Package and PCB thermal dataVN610SP-E
Table 15.Thermal parameters
Area / island (cm2)Footprint6
R1 (°C/W)0.016
R2 (°C/W)0.06
R3 (°C/W)0.08
R4 (°C/W)0.8
R5 (°C/W)12
R6 (°C/W)3722
C1 (W.s/°C)0.002
C2 (W.s/°C)1E-02
C3 (W.s/°C)0.04
C4 (W.s/°C)0.3
C5 (W.s/°C)0.75
C6 (W.s/°C)35
22/27Doc ID 10889 Rev 4
Page 23
VN610SP-EPackage and packing information
5 Package and packing information
5.1 ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
5.2 PowerSO-10 mechanical data
Figure 25. PowerSO-10 package dimensions
10
HE
h
A
F
A1
1
eB
0.25
D
= =
D1
= =
E2
DETAIL "A"
B
0.10 A
E
SEATING
PLANE
A
C
B
E4
SEATING
PLANE
A1
DETAIL "A"
L
α
Doc ID 10889 Rev 423/27
Page 24
Package and packing informationVN610SP-E
Table 16.PowerSO-10 mechanical data
millimeters
Symbol
Min Typ Max
A 3.35 3.65
(1)
A
A1 0.00 0.10
B 0.40 0.60
(1)
0.37 0.53
B
C 0.35 0.55
(1)
C
0.23 0.32
D 9.40 9.60
D1 7.40 7.60
E 9.30 9.50
E2 7.20 7.60
(1)
7.30 7.50
E2
E4 5.90 6.10
(1)
5.90 6.30
E4
3.4 3.6
e 1.27
F 1.25 1.35
(1)
F
H 13.80 14.40
(1)
H
h 0.50
L 1.20 1.80
(1)
L
a 0° 8°
(1)
α
1. Muar only POA P013P.
1.20 1.40
13.85 14.35
0.80 1.10
2°8°
24/27Doc ID 10889 Rev 4
Page 25
VN610SP-EPackage and packing information
5.3 PowerSO-10 packing information
Figure 26. PowerSO-10 suggested pad layout and tube shipment (no suffix)
14.6 - 14.9
10.8 - 11
6.30
1
2
3
9.5
4
5
10
9
8
7
6
Figure 27. PowerSO-10 tape and reel shipment (suffix “TR”)
B
C
A
B
0.67 - 0.73
0.54 - 0. 6
1.27
A
All dimensions are in mm.
Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1)
Casablanca50100053210.4 16.4 0.8
Muar5010005324.9 17.2 0.8
Reel dimensions
Base Q.ty600
Bulk Q.ty600
A (max)330
B (min)1.5
C (± 0.2)13
F20.2
G (+ 2 / -0)24.4
N (min)60
T (max)30.4
MUARCASABLANCA
C
Tape dimensions
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Updated following tables:
– Table 9: Switching (V
– Table 15: Thermal parameters
– Updated Figure 24: Thermal fitting model of a single channel in
PowerSO-10
= 13 V)
CC
26/27Doc ID 10889 Rev 4
Page 27
VN610SP-E
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
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