Single channel high-side driver with analog current sense
SO-16L
("1($'5
Features
Max supply voltageV
Operating voltage rangeV
Max on-state resistanceR
Current limitation (typ)I
Off-state supply currentI
1. Typical value with all loads connected.
■ General
– Inrush current active management by
power limitation
– Very low standby current
– 3.0 V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– Compliant with European directive
2002/95/EC
– Very low current sense leakage
– AEC-Q100 qualified
■ Diagnostic functions
– Proportional load current sense
– High current sense precision for wide
currents range
– Current sense disable
– Off-state open-load detection
– Output short to V
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
■ All types of resistive, inductive and capacitive
loads
■ Suitable as LED driver
Description
The VN5E025ASO-E is a single channel highside driver manufactured using ST proprietary
VIPower
SO-16L package. The device is designed to drive
12 V automotive grounded loads, and to provide
protection and diagnostics. It also implements a
3 V and 5 V CMOS-compatible interface for use
with any microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, overtemperature shut-off with autorestart and overvoltage active clamp. A dedicated
analog current sense pin is associated with every
output channel providing enhanced diagnostic
functions including fast detection of overload and
short-circuit to ground through power limitation
indication, overtemperature indication, shortcircuit to V
off-state open-load detection. The current sensing
and diagnostic feedback of the whole device can
be disabled by pulling the CS_DIS pin high to
share the external sense resistor with similar
devices.
®
M0-5 technology and housed in
diagnosis and on-state and
CC
June 2012Doc ID 022463 Rev 31/37
This is information on a product in full production.
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device operates under
abnormal conditions this software must limit the duration and number of activation cycles.
T a ble 9.Current sense (8 V < VCC<18V)
DC short circuit current
Short circuit current
during thermal cycling
Shutdown temperature150175200°C
TSD
Reset temperatureTRS + 1 TRS + 5°C
R
Thermal reset of status135°C
RS
Thermal hysteresis
TSD-TR
)
(T
Turn-off output voltage
clamp
Output voltage drop
ON
limitation
CC
5V<V
<28V85A
CC
VCC=13V;
T
R<Tj<TTSD
I
=2A; VIN=0;
OUT
L=6mH
I
=0.1A;
OUT
T
= -40°C...150°C
j
(see Figure 8)
15A
7°C
-41 VCC-46 VCC-52V
V
CC
25mV
SymbolParameterTest conditionsMin.Typ. Max. Unit
I
= 0.05 A;
K
LED
K
K
0
1
I
OUT/ISENSE
I
OUT/ISENSE
I
OUT/ISENSE
OUT
V
T
I
V
T
I
V
T
= 0.5 V; V
SENSE
= -40°C...150°C
j
=0.5A; V
OUT
=0V;
CSD
= -40°C...150°C
j
=2A; V
OUT
=0V;
CSD
= -40°C...150°C
j
Tj= 25°C...150°C
I
=2A; V
dK1/K
(1)
Current sense ratio drift
1
OUT
=0V;
V
CSD
T
= -40°C...150°C
j
10/37Doc ID 022463 Rev 3
SENSE
SENSE
SENSE
CSD
=4V;
=4V;
=0V;
=0.5V;
1370 3180 4930
1990 3050 4120
2100
2860
3840
2220
2860
3500
-1010%
Page 11
VN5E025ASO-EElectrical specifications
T a ble 9.Current sense (8 V < VCC< 18 V) (continued)
SymbolParameterTest conditionsMin.Typ. Max. Unit
I
K
dK2/K
K
dK3/K
I
SENSE0
I
OL
V
SENSE
I
2
OUT/ISENSE
(1)
Current sense ratio drift
2
I
3
OUT/ISENSE
(1)
Current sense ratio drift
3
Analog sense leakage
current
Open-load on-state
current detection
threshold
Max analog sense output
voltage
=3A; V
OUT
=0V;
V
CSD
Tj= -40°C...150°C
T
= 25°C...150°C
j
=3A; V
I
OUT
V
=0V;
CSD
= -40°C...150°C
T
j
I
=10A; V
OUT
=0V;
V
CSD
Tj= -40°C...150°C
Tj= 25°C...150°C
I
=10A; V
OUT
=0V;
V
CSD
= -40°C...150°C
T
j
=0A; V
I
OUT
=5V; VIN=0V;
V
CSD
= -40°C...150°C
T
j
I
=0A; V
OUT
=0V; VIN=5V;
V
CSD
= -40°C...150°C
T
j
I
=2A; V
OUT
=5V; VIN=5V;
V
CSD
= -40°C...150°C
T
j
=5V, 8V<VCC<18V;
V
IN
=5µA
I
SENSE
=3A; V
I
OUT
=4V;
SENSE
2300
2850
2420
2850
=4V;
SENSE
-77%
=4V;
SENSE
2690
2830
2700
2830
=4V;
SENSE
-44%
=0V;
SENSE
01µA
=0V;
SENSE
02µA
=0V;
SENSE
01µA
530mA
=0V5V
CSD
3520
3300
3060
3020
V
SENSEH
I
SENSEH
t
DSENSE1H
t
DSENSE1L
t
DSENSE2H
Analog sense output
(2)
voltage in fault condition
Analog sense output
(2)
current in fault condition
Delay response time from
falling edge of CS_DIS pin
Delay response time from
rising edge of CS_DIS pin
Delay response time from
rising edge of INPUT pin
V
=13V; R
CC
=13V; V
V
CC
V
SENSE
0.5 A < I
I
SENSE
<4V;
<10A;
OUT
= 90% of I
=3.9KΩ8V
SENSE
=5V9mA
SENSE
SENSE max
40100µs
(see Figure 4)
V
0.5 A < I
I
SENSE
SENSE
<4V;
<10A;
OUT
= 10% of I
SENSE max
520µs
(see Figure 4)
SENSE
SENSE
<4V;
<10A;
OUT
= 90% of I
SENSE max
80300µs
V
0.5 A < I
I
(see Figure 4)
Doc ID 022463 Rev 311/37
Page 12
Electrical specificationsVN5E025ASO-E
SENSE CURRENT
INPUT
LOAD CURRENT
CS_DIS
t
DSENSE2H
t
DSENSE2L
t
DSENSE1L
t
DSENSE1H
T a ble 9.Current sense (8 V < VCC< 18 V) (continued)
SymbolParameterTest conditionsMin.Typ. Max. Unit
SENSE
SENSE
= 90% of I
OUT
OUTMAX
SENSE
SENSE
<4V;
= 90% of I
SENSEMAX,
OUTMAX
= 3 A (see Figure 7)
<4V;
<10A;
OUT
= 10% of I
SENSE max
110µs
80250µs
Δ
t
DSENSE2H
t
DSENSE2L
Delay response time
between rising edge of
output current and rising
edge of current sense
Delay response time from
falling edge of INPUT pin
V
I
I
I
V
0.5 A < I
I
(see Figure 4)
1. Parameter guaranteed by design, it is not tested.
2. Fault condition includes: power limitation, overtemperature and open-load off-state detection.
Table 10.Open-load detection (8 V < VCC<18V)
SymbolParameterTest conditionsMin.Typ.Max.Unit
Open-load off-state
V
OL
voltage detection
=0V 2—4V
V
IN
threshold
Output short circuit to
t
DSTKON
V
detection delay at
CC
See Figure 5180—1200µs
turn-off
I
L(off2)r
I
L(off2)f
Off-state output current at
V
=4V
OUT
Off-state output current at
V
=2V
OUT
=0V; V
V
IN
V
rising from 0 V to 4 V
OUT
V
=0V;
IN
V
SENSE=VSENSEH
SENSE
=0V;
; V
falling from VCC to 2 V
OUT
-120—0µA
-50—90µA
Delay response from
t
d_vol
output rising edge to
V
SENSE
rising edge in
=4V; VIN=0V;
V
OUT
V
SENSE
= 90% of V
open-load
Figure 4.Current sense delay characteristics
12/37Doc ID 022463 Rev 3
SENSEH
—20µs
Page 13
VN5E025ASO-EElectrical specifications
V
IN
V
CS
t
DSTKON
OUTPUT STUCK TO V
CC
V
OUT
> V
OL
V
SENSEH
V
OUT
dV
OUT
/dt
(on)
t
r
80%
10%
t
f
dV
OUT
/dt
(off)
t
d(off)
t
d(on)
INPUT
t
t
90%
t
Won
t
Woff
Figure 5.Open-load off-state delay timing
Figure 6.Switching characteristics
Doc ID 022463 Rev 313/37
Page 14
Electrical specificationsVN5E025ASO-E
V
IN
I
OUT
I
SENSE
I
OUTMAX
I
SENSEMAX
90% I
SENSEMAX
90% I
OUTMAX
Δ
t
DSENSE2H
t
t
t
V
on
I
out
V
cc-Vout
T
j
=150oC
T
j
=25oC
T
j
=-40oC
V
on/Ron(T)
Figure 7.Delay response time between rising edge of output current and rising
edge of current sense (CS enabled)
Figure 8.Output voltage drop limitation
14/37Doc ID 022463 Rev 3
Page 15
VN5E025ASO-EElectrical specifications
17 0 0
2200
2700
3200
3700
4200
2345 678910
I
OUT
(A)
I
out
/ I
sense
max Tj = -40 °C to 150 °C
max Tj = 25 °C to 150 °C
min Tj = 25 °C to 150 °C
min Tj = -40 °C to 150 °C
typical value
-10
-5
0
5
10
2345678910
dk/k(%)
I
OUT
(A)
Figure 9.I
OUT
/ I
SENSE
vs I
OUT
Figure 10. Maximum current sense ratio drift vs load current
Note:Parameter guaranteed by design; it is not tested.
Doc ID 022463 Rev 315/37
Page 16
Electrical specificationsVN5E025ASO-E
Table 11.Truth table
ConditionsInputOutputSense (V
Normal operation
L
H
L
H
CSD
0
Nominal
=0V)
(1)
Overtemperature
Undervoltage
Overload
Short circuit to GND
(power limitation)
Open-load off-state
(with external pull-up)
Short circuit to V
CC
(external pull-up
disconnected)
Negative output voltage
clamp
1. If the V
and external circuit.
is high, the SENSE output is at a high impedance, its potential depends on leakage currents
CSD
L
H
L
H
H
L
L
L
L
X
0
V
SENSEH
0
0
Nominal
(no power limitation)
H
Cycling
V
SENSEH
(power limitation)
L
H
LHV
L
H
L
L
H
H
0
V
SENSEH
SENSEH
V
SENSEH
< Nominal
LL 0
16/37Doc ID 022463 Rev 3
Page 17
VN5E025ASO-EElectrical specifications
T able 12.Electrical transient requirements (part 1)
ISO 7637-2:
2004(E)
T est puls e
Test levels
(1)
Number of
pulses or
IIIIVMin.Max.
test times
Burst cycle/pulse
repetition time
Delays and
Impedance
1-75V-100V5000 pulses0.5s5s2 ms, 10Ω
2a+37V+50V5000 pulses0.2s5s50µs, 2Ω
3a-100V-150V1h90ms100ms0.1µs, 50Ω
3b+75V+100V1h90ms100ms0.1µs, 50Ω
4-6V-7V1 pulse100ms, 0.01Ω
(2)
5b
1. The above test levels must be considered referred to VCC= 13.5V except for pulse 5b.
2. Valid in case of external load dump clamp: 40V maximum referred to ground.
T able 13.Electrical transient requirements (part 2)
ISO 7637-2:
+65V+87V1 pulse400ms, 2Ω
Test level results
2004E
T est puls e
IIIVI
1CC
2aCC
3aCC
3bCC
4CC
(1)
5b
1. Valid in case of external load dump clamp: 40V maximum referred to ground.
T able 14.Electrical transient requirements (part 3)
CC
ClassContents
CAll functions of the device performed as designed after exposure to disturbance.
E
One or more functions of the device did not perform as designed after exposure to
disturbance and cannot be returned to proper operation without replacing the device.
Doc ID 022463 Rev 317/37
Page 18
Electrical specificationsVN5E025ASO-E
I
OUT
V
SENSE
V
CS_DIS
INPUT
Nominal loadNominal load
Normal operation
Power Limitation
I
LimH
>
I
LimL
>
I
OUT
V
SENSE
V
CS_DIS
INPUT
Thermal cycling
Overload or Short to GND
2.4 Waveforms
Figure 11. Normal operation
Figure 12. Overload or short to GND
18/37Doc ID 022463 Rev 3
Page 19
VN5E025ASO-EElectrical specifications
I
OUT
V
SENSE
V
CS_DIS
INPUT
I
LimH
>
Nominal load
Intermittent Overload
I
LimL
>
Overload
V
SENSEH
>
INPUT
OFF-State Open Load
with external circutry
V
OL
I
OUT
V
SENSE
V
CS_DIS
V
OUT
V
OUT
> V
OL
t
DSTK(on)
V
SENSEH
>
Figure 13. Intermittent overload
Figure 14. Off-state open-load with external circuitry
Doc ID 022463 Rev 319/37
Page 20
Electrical specificationsVN5E025ASO-E
t
DSTK(on)
V
OUT
> V
OL
Resistive
Short to V
CC
Hard
Short to V
CC
Short to V
CC
I
OUT
V
CS_DIS
V
OUT
V
OL
t
DSTK(on)
T
TSD
T
R
TJ evolution in
Overload or Short to GND
I
LimH
>
< I
LimL
T
J_START
T
HYST
Power Limitation
Self-limitation of fast thermal transients
INPUT
I
OUT
T
J
Figure 15. Short to V
CC
Figure 16. TJ evolution in overload or short to GND
20/37Doc ID 022463 Rev 3
Page 21
VN5E025ASO-EElectrical specifications
-50 -250255075 100 125 150 175
Tc (°C)
0
300
600
900
1200
1500
Iloff (nA)
Off State
Vcc=13V
Vin=Vout=0V
-50 -250255075100 125 150 175
Tc (°C)
1
1,5
2
2,5
3
3,5
4
4,5
5
Iih (µA)
Vin=2.1V
-50 -250255075 100 125 150 175
Tc (°C)
6
6,2
6,4
6,6
6,8
7
Vicl (V)
lin=1mA
-50 -250255075 100 125 150 175
Tc (°C)
0
0,2
0,4
0,6
0,8
1
1,2
1,4
1,6
1,8
2
Vil (V)
-50 -250255075 100 125 150 175
Tc (°C)
0
0,5
1
1,5
2
2,5
3
3,5
4
Vih (V)
-50 -250255075 100 125 150 175
Tc (°C)
0
0,1
0,2
0,3
0,4
0,5
0,6
0,7
0,8
0,9
1
Vihyst (V)
2.5 Electrical characteristics curves
Figure 17. Off-state output currentFigure 18. High level input current
Figure 21. Input high levelFigure 22. Input hysteresis voltage
Doc ID 022463 Rev 321/37
Page 22
Electrical specificationsVN5E025ASO-E
-50 -250255075 100 125 150 175
Tc (°C)
0
20
40
60
80
Ron (mOhm)
Iout= 3A
Vcc=13V
0510152025303540
Vcc (V)
0
10
20
30
40
50
60
Ron (mOhm)
Tc=-40°C
Tc=25°C
Tc=125°C
Tc=150°C
-50 -250255075 100 125 150 175
Tc (°C)
0
1
2
3
4
5
6
7
8
Vusd (V)
-50 -250255075 100 125 150 175
Tc (°C)
0
100
200
300
400
500
600
700
(dVout/dt )On ( V/ms)
Vcc=13V
RI=4.3 Ohm
-50 -250255075 100 125 150 175
Tc (°C)
40
50
60
70
80
Ilimh (A)
Vcc=13V
-50 -250255075 100 125 150 175
Tc (°C)
0
50
100
150
200
250
300
350
400
(dVout/dt )Off (V/m s)
Vcc=13V
RI= 4.3 Ohm
Figure 23. On-state resistance vs T
Figure 25. Undervoltage shutdownFigure 26. Turn-on voltage slope
case
Figure 24. On-state resistance vs V
CC
Figure 27. I
22/37Doc ID 022463 Rev 3
LIMH
vs T
case
Figure 28. Turn-off voltage slope
Page 23
VN5E025ASO-EElectrical specifications
-50 -250255075 100 125 150 175
Tc (°C)
0
0,5
1
1,5
2
2,5
3
3,5
4
Vcsdh (V)
-50 -250255075 100 125 150 175
Tc (°C)
2
3
4
5
6
7
8
9
10
Vcsdcl(V)
Iin = 1 mA
-50 -250255075 100 125 150 175
Tc (°C)
0
0,5
1
1,5
2
2,5
3
Vcsdl (V)
Figure 29. CS_DIS high level voltageFigure 30. CS_DIS clamp voltage
Figure 31. CS_DIS low level voltage
Doc ID 022463 Rev 323/37
Page 24
Application informationVN5E025ASO-E
V
CC
GND
OUTPUT
D
GND
R
GND
D
ld
Μ
CU
+5V
V
GND
CS_DIS
IINPUT
R
prot
R
prot
CURRENT SENSE
R
prot
R
SENSE
C
ext
3 Application information
Figure 32. Application schematic
3.1 GND protection network against reverse battery
This section provides two solutions for implementing a ground protection network against
reverse battery.
3.1.1 Solution 1: resistor in the ground line (R
This can be used with any type of load.
The following shows how to dimension the R
1.R
2. R
where -I
≤ 600mV / (I
GND
≥ (−VCC) / (-I
GND
is the DC reverse ground pin current and can be found in the absolute
GND
S(on)max
GND
)
)
maximum rating section of the device datasheet.
Power dissipation in R
P
=(-VCC)2/R
D
(when VCC<0 during reverse battery situations) is:
GND
GND
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
24/37Doc ID 022463 Rev 3
Please note that, if the microprocessor ground is not shared by the device ground, then the
R
produces a shift (I
GND
S(on)max
* R
) in the input thresholds and the status output
GND
GND
resistor:
GND
only)
S(on)max
becomes the sum of the
Page 25
VN5E025ASO-EApplication information
values. This shift varies depending on how many devices are ON in case of several highside drivers sharing the same R
GND
.
If the calculated power dissipation requires the use of a large resistor, or several devices
have to share the same resistor, then ST suggests using the here below solution 2.
3.1.2 Solution 2: diode (D
Note that a resistor (R
GND
) in the ground line
GND
=1kΩ) should be inserted in parallel to D
an inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network produces a shift (≈600mV) in the input threshold
and in the status output values if the microprocessor ground is not common to the device
ground. This shift not varies if more than one HSD shares the same diode/resistor network.
3.2 Load dump protection
Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
V
maximum DC rating. The same applies if the device is subject to transients on the VCC
CC
line that are greater than the ones shown in the ISO 7637-2: 2004(E) table.
3.3 MCU I/O protection
If a ground protection network is used and negative transients are present on the VCC line,
the control pins are pulled negative. ST suggests to insert a resistor (R
the microcontroller I/O pins from latching up.
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
microcontroller I/Os:
if the device drives
GND
) in line to prevent
prot
-V
CCpeak/Ilatchup
≤ R
prot
Calculation example:
For V
CCpeak
5kΩ ≤ R
= - 100V and I
≤ 180kΩ
prot
Recommended values: R
≤ (V
OHμC-VIH-VGND
≥ 20mA; V
latchup
=10kΩ, C
prot
Doc ID 022463 Rev 325/37
EXT
) / I
IHmax
OHµC
= 10nF.
≥ 4.5V
Page 26
Application informationVN5E025ASO-E
Main MOSn
41V
OUTn
I
Loff2r
R
SENSE
R
PROT
To uC ADC
R
PD
R
PU
V
PU
Pwr_Lim
V
SENSE
PU_CMD
Overtemperature
OL OFF
+
-
V
OL
CURRENT
SENSEn
I
OUT/KX
I
SENSEH
V
BAT
I
Loff2f
V
SENSEH
Load
INPUTn
V
CC
GND
CS_DIS
3.4 Current sense and diagnostic
The current sense pin performs a double function (see Figure 33: Current sense and
diagnostic):
●Current mirror of the load current in normal operation, delivering a current
proportional to the load current according to a known ratio K
The current I
external resistor R
minimum (see parameter V
can be easily converted to a voltage V
SENSE
. Linearity between I
SENSE
SENSE
in Table 9: Current sense (8 V < VCC<18V)). The
OUT
and V
current sense accuracy depends on the output current (refer to current sense electrical
characteristics Table 9: Current sense (8 V < V
●Diagnostic flag in fault conditions, delivering a fixed voltage V
maximum current I
SENSEH
in case of the following fault conditions (refer to Truth table):
<18V)).
CC
–Power limitation activation
–Overtemperature
–Short to V
in off-state
CC
–Open-load in off-state with additional external components.
A logic level high on the CS_DIS pin simultaneously sets all the current sense pins of the
device in a high impedance state, thus disabling the current monitoring and diagnostic
detection. This feature allows multiplexing of the microcontroller analog inputs by sharing
the sense resistance and ADC line among different devices.
.
X
by means of an
SENSE
is ensured up to 5V
SENSE
SENSEH
up to a
Figure 33. Current sense and diagnostic
26/37Doc ID 022463 Rev 3
Page 27
VN5E025ASO-EApplication information
VVIRV
OLfoffLPD
OFFupPull
OUT
2
min)2(
_
=<⋅=
−
VV
RR
IRRVR
V
OL
PDPU
roffLPDPUPUPD
ONupPull
OUT
4
max
)2(
_
=>
+
=
−
3.4.1 Short to VCC and off-state open-load detection
Short to V
A short circuit between V
V
SENSEH
CC
and output is indicated by the relevant current sense pin set to
CC
during the device off-state. Little or no current is delivered by the current sense
during the on-state depending on the nature of the short circuit.
Off-state open-load with exte rnal circuitry
Detection of an open-load in off mode requires an external pull-up resistor (R
the output to a positive supply voltage (V
It is preferable that V
is switched off during the module standby mode to avoid an increase
PU
PU
).
) connecting
PU
in overall standby current consumption in normal conditions, that is, when the load is
connected.
An external pull-down resistor (R
) connected between output and GND is mandatory to
PD
avoid misdetection in case of floating outputs in off-state (see Figure 33: Current sense and
diagnostic).
R
must be selected in order to ensure V
PD
OUT < VOLmin
unless pulled up by the external
circuitry:
R
≤ 22 KΩ is recommended.
PD
For proper open-load detection in off-state, the external pull-up resistor must be selected
according to the following formula:
For the values of V
(8 V < V
CC
<18V).
OLmin,VOLmax, IL(off2)r
Doc ID 022463 Rev 327/37
and I
⋅⋅−⋅
see Table 10: Open-load detection
L(off2)f
Page 28
Application informationVN5E025ASO-E
1
10
100
0,1110100L (mH)
I (A)
DemagnetizationDemagnetizationDemagnetization
t
V
IN
, I
L
C: T
jstart
= 125°C repetitive pulse
A: T
jstart
= 150°C single pulse
B: T
jstart
= 100°C repetitive pulse
A
B
C
3.5 Maximum demagnetization energy (VCC=13.5V)
Figure 34. Maximum turn off current versus inductance
Note:Values are generated with R
In case of repetitive pulses, T
must not exceed the temperature specified above for curves A and B.
=0Ω.
L
(at the beginning of each demagnetization) of every pulse
jstart
28/37Doc ID 022463 Rev 3
Page 29
VN5E025ASO-EPackage and PC board thermal data
("1($'5
TBD
57+MDPE
("1($'5
1$#$VIFBUTJOLBSFBDN?
35)K@BNC$8
4 Package and PC board thermal data
4.1 SO-16L thermal data
Figure 35. SO-16L PC board
Note:Layout condition of Rth and Zth measurements (PCB: Double Layers, Thermal Vias,FR4
area 77mm X 86 mm, PCB thickness=1.6mm, Cu thickness = 70µm (front and back side),
Copper area from minimum pad lay- out to 24 cm2 ).
Figure 36. \R
vs PCB copper area in open box free air condition
thj-amb
Doc ID 022463 Rev 329/37
Page 30
Package and PC board thermal dataVN5E025ASO-E
TBD
("1(3*
Z
THδRTH
δ Z
THtp
1 δ–()+⋅=
where
δtpT⁄=
Figure 37. SO-16L thermal impedance junction ambient single pulse
=7+&:
&X FP
&X FP
&X IRRWSULQW
7LPHV
("1(3*
Figure 38. Thermal fitting model of a single channel HSD in SO-16L
Equation 1: pulse calculation formula:
30/37Doc ID 022463 Rev 3
Page 31
VN5E025ASO-EPackage and PC board thermal data
Table 15.Thermal parameter
Area/island (cm2)Footprint28
R1 (°C/W)0.28
R2 (°C/W)1.8
R3 (°C/W)4
R4 (°C/W)866
R5 (°C/W)141313
R6 (°C/W)282014.5
C1 (W.s/°C)0.001
C2 (W.s/°C)0.003
C3 (W.s/°C)0.1
C4 (W.s/°C)0.5
C5 (W.s/°C)11.51.5
C6 (W.s/°C)3912
Doc ID 022463 Rev 331/37
Page 32
Package and packing informationVN5E025ASO-E
("1($'5
5 Package and packing information
5.1 ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
Figure 41. SO-16L tape and reel shipment (suffix “TR”)
34/37Doc ID 022463 Rev 3
Page 35
VN5E025ASO-EOrder codes
6 Order codes
T a ble 17.Device summary
Package
TubeTape and reel
SO-16LVN5E025ASO-EVN5E025ASOTR-E
Order codes
Doc ID 022463 Rev 335/37
Page 36
Revision historyVN5E025ASO-E
7 Revision history
Table 18.Document revision history
DateRevisionChanges
10-Nov-20111Initial release.
12-Mar-20122Added Section 5: Package and packing information.
Table 4: Thermal data:
25-Jun-20123
–R
–R
thj-case
thj-pcb
: added row
: removed row
36/37Doc ID 022463 Rev 3
Page 37
VN5E025ASO-E
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAI LURE OR MALFUNCTION MAY RESULT IN PERS ONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.