The VN920-E is a monolithic device designed in
STMicroelectronics VIPower™ M0-3 technology,
intended for driving any kind of load with one side
connected to ground. Active V
pin voltage
CC
clamp protects the device against low energy
spikes (see ISO7637 transient compatibility able).
Active current limitation combined with thermal
shutdown and automatic restart protect the device
against overload. The device integrates an analog
current sense output which delivers a current
proportional to the load current. Device
automatically turns off in case of ground pin
disconnection.
Table 2.Suggested connections for unused and not connected pins
Connection / pinCurrent SenseN.C.OutputInput
FloatingXXX
To ground
Through 1KΩ
resistor
X
Through 10KΩ
resistor
Doc ID 10894 Rev 35/23
Page 6
Electrical specificationsVN920-E
2 Electrical specifications
Figure 3.Current and voltage conventions
I
S
V
I
IN
V
IN
INPUT
CURRENT SENSE
2.1 Absolute maximum ratings
GND
CC
OUTPUT
I
GND
I
OUT
I
SENSE
V
SENSE
V
F
V
OUT
V
CC
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to Absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics sure
program and other relevant quality document.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
CC
- V
CC
- I
gnd
I
OUT
- I
OUT
I
IN
V
CSENSE
V
ESD
DC supply voltage41V
Reverse DC supply voltage- 0.3V
DC reverse ground pin current- 200mA
DC output current
Internally
limited
A
Reverse DC output current - 21A
DC input current+/- 10mA
Current sense maximum voltage
- 3
+ 15
V
V
Electrostatic discharge
(human body model: R = 1.5KΩ; C = 100pF)
– Input
– Current sense
– Output
–V
CC
4000
2000
5000
5000
V
V
V
V
6/23 Doc ID 10894 Rev 3
Page 7
VN920-EElectrical specifications
Table 3.Absolute maximum ratings (continued)
SymbolParameterValueUnit
Maximum switching energy
E
MAX
P
T
T
T
stg
(L = 0.25mH; R
= 45A)
I
L
tot
j
c
Power dissipation TC ≤ 25°C96.1W
Junction operating temperature
Case operating temperature- 40 to 150°C
= 0Ω; V
L
= 13.5V; T
bat
jstart
= 150°C;
Internally
limited
Storage temperature- 55 to 150°C
mJ
°C
2.2 Thermal data
Table 4.Thermal data
SymbolParameter
R
thj-case
R
thj-lead
R
thj-amb
Thermal resistance junction-case (max)1.3°C/W
Thermal resistance junction-lead (max)-°C/W
Thermal resistance junction-ambient (max)61.3°C/W
2.3 Electrical characteristics
Values specified in this section are for 8V < V
stated.
Table 5.Power
SymbolParameterTest conditionsMin.Typ.Max. Unit
V
V
V
R
V
CLAMP
I
L(off1)
Operating supply voltage5.51336V
CC
Undervoltage shutdown345.5V
USD
Overvoltage shutdown36V
OV
On-state resistance
ON
Clamp voltageI
I
Supply current
S
Off-state output currentV
I
= 10A; Tj = 25°C;
OUT
I
= 10A;
OUT
= 3A; V
I
OUT
= 20mA
CC
Off-state; V
= V
V
IN
OUT
Off-state; V
= V
V
IN
OUT
On-state; V
I
= 0A; R
OUT
= V
IN
OUT
Max.
value
< 36V; -40°C < Tj < 150°C, unless otherwise
CC
Unit
16
32
= 6V
CC
(1)
= 13V;
CC
= 0V
= 13V;
CC
= 0V; Tj = 25°C
= 13V; V
CC
SENSE
= V
SENSE
IN
= 3.9 kΩ
= 0V050µA
414855V
= 5V;
55
101025
20
5
mΩ
mΩ
mΩ
µA
µA
mA
Doc ID 10894 Rev 37/23
Page 8
Electrical specificationsVN920-E
Table 5.Power (continued)
SymbolParameterTest conditionsMin.Typ.Max. Unit
I
L(off2)
I
L(off3)
I
L(off4)
1. V
Table 6.Switching (VCC=13V)
Off-state output currentV
Off-state output current
Off-state output current
and VOV are correlated. Typical difference is 5V.
clamp
IN
V
IN
V
CC
V
IN
V
CC
= V
= V
OUT
OUT
= V
= V
SENSE
SENSE
= 13V; Tj = 125°C
= V
OUT
= V
SENSE
= 13V; Tj = 25°C
= 3.5V-75µA
= 0V;
= 0V;
5µA
3µA
SymbolParameterTest conditionsMin.Typ.Max. Unit
t
d(on)
t
d(off)
dV
OUT
dV
OUT
Table 7.Logic inputs
Turn-on delay time RL = 1.3Ω (see Figure 5)-50- µs
Turn-off delay time RL = 1.3Ω (see Figure 5)-50- µs
/dt
Turn-on voltage slope RL = 1.3Ω (see Figure 5)-See Figure 15-V/µs
(on)
/dt
Turn-off voltage slope RL = 1.3Ω (see Figure 5)-See Figure 16-V/µs
(off)
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
I(hyst)
V
V
Input low level voltage1.25V
IL
Low level input currentV
I
IL
Input high-level voltage3.25V
IH
I
High-level input currentV
IH
= 1.25V1µA
IN
= 3.25V10µA
IN
Input hysteresis voltage0.5V
Input clamp voltage
ICL
I
IN
I
IN
= 1mA
= - 1mA
66.8
- 0.7
8V
V
Table 8.VCC output diode
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
F
Table 9.Protections
Forward on voltage- I
(1)
OUT
SymbolParameterTest conditionsMin.Typ.Max.Unit
T
TSD
T
T
hyst
I
lim
Shutdown temperature150175200°C
Reset temperature135°C
R
Thermal hysteresis715°C
V
DC short circuit current
CC
5V < V
8/23 Doc ID 10894 Rev 3
= 2A; Tj = 150°C--0.6V
= 13V
CC
< 36V
304575
75
A
A
Page 9
VN920-EElectrical specifications
Table 9.Protections
(1)
(continued)
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
demag
V
1. To ensure long term reliability under heavy over-load or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device operates under
abnormal conditions this software must limit the duration and number of activation cycles.
Table 10.Current sense (9V ≤ V
Turn-off output clamp
voltage
Output voltage drop
ON
limitation
I
OUT
= 2A; V
IN
= 0V;
L = 6mH
I
= 1 A;
OUT
Tj = -40°C...150°C
(1)
≤ 16V)
CC
V
CC
- 41 V
CC
- 48 V
- 55V
CC
50mV
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
dK
dK
K
1
1/K1
K
2
2/K2
K
3
I
OUT/ISENSE
Current sense
ratio drift
I
OUT/ISENSE
Current sense
ratio drift
I
OUT/ISENSE
= 1A; V
OUT
= -40°C...150°C
T
j
= 1A; V
I
OUT
= - 40°C...150°C
T
j
I
= 10A; V
OUT
= - 40°C
T
j
= 25°C...150°C
T
j
= 10A; V
I
OUT
= -40°C...150°C
T
j
I
= 30A; V
OUT
= -40°C
T
j
Tj = 25°C...150°C
SENSE
SENSE
SENSE
SENSE
SENSE
= 0.5V;
= 0.5V;
= 4V;
= 4V;
= 4V;
33004400 6000
-10+10%
4200
4900
6000
4400
4900
5750
-8+8%
4200
4900
5500
4400
4900
5250
dK
3/K3
I
SENSE0
V
SENSE
Current sense
ratio drift
Analog sense
leakage current
Max analog
sense output
voltage
= 30A; V
I
OUT
Tj = -40°C...150°C
= 6...16V; I
V
CC
V
T
V
V
= 0V;
SENSE
= -40°C...150°C
j
= 5.5V; I
CC
> 8V, I
CC
OUT
SENSE
OUT
= 5A; R
OUT
= 10A; R
= 4V;
= 0A;
SENSE
SENSE
= 10kΩ
= 10kΩ24
-6+6%
010µA
V
V
Sense voltage in
V
SENSEH
over temperature
V
CC
= 13V; R
= 3.9kΩ5.5V
SENSE
condition
Analog sense
R
VSENSEH
output
impedance in
over temperature
V
= 13V; Tj > T
CC
output open
TSD
;
400Ω
condition
t
DSENSE
1. See Figure 4.
2. Current sense signal delay after positive input slope.
CAll functions of the device are performed as designed after exposure to disturbance.
E
One or more functions of the device are not performed as designed after exposure to
disturbance and cannot be returned to proper operation without replacing the device.
12/23 Doc ID 10894 Rev 3
Page 13
VN920-EElectrical specifications
Figure 6.Waveforms
NORMAL OPERATION
INPUT
LOAD CURRENT
SENSE
UNDERVOLTAGE
V
CC
INPUT
LOAD CURRENT
SENSE
V
CC
INPUT
LOAD CURRENT
SENSE
V
USD
V
OV
V
> V
CC
USD
V
USDhyst
OVERVOLTAGE
V
OVhyst
SHORT TO GROUND
INPUT
LOAD CURRENT
LOAD VOLTAGE
SENSE
SHORT TO V
CC
INPUT
LOAD VOLTAGE
LOAD CURRENT
SENSE
T
j
T
T
<Nominal
TSD
R
OVERTEMPERATURE
<Nominal
INPUT
LOAD CURRENT
V
SENSE
I
SENSE
SENSEH
=
R
SENSE
Doc ID 10894 Rev 313/23
Page 14
Electrical specificationsVN920-E
2.4 Electrical characteristics curves
k
Figure 7.Off-state output currentFigure 8.High level input current
Figure 9.Input clamp voltageFigure 10. On-state resistance vs V
Figure 11. On-state resistance vs T
CASE
Figure 12. Input high level voltage
CC
14/23 Doc ID 10894 Rev 3
Page 15
VN920-EElectrical specifications
Figure 13. Input low level voltage Figure 14. Input hysteresis voltage
Figure 15. Turn-on voltage slopeFigure 16. Turn-off voltage slope
Figure 17. Overvoltage shutdownFigure 18.I
LIM
vs T
case
Doc ID 10894 Rev 315/23
Page 16
Application informationVN920-E
3 Application information
Figure 19. Application schematic
+5V
GND
V
CC
OUTPUT
D
GND
R
prot
INPUT
R
μ
C
prot
R
SENSE
CURRENT SENSE
GND
R
V
GND
3.1 GND protection network against reverse battery
3.1.1 Solution 1: resistor in the ground line (R
This can be used with any type of load.
GND
only)
D
ld
The following is an indication on how to dimension the R
1.R
2. R
where - I
≤ 600mV / (I
GND
≥ (- VCC) / (- I
GND
is the DC reverse ground pin current and can be found in the absolute
GND
S(on)max
GND
).
)
maximum rating section of the device datasheet.
Power Dissipation in R
P
= (- VCC)2/ R
D
GND
GND
(when V
CC
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
will produce a shift (I
GND
values. This shift will vary depending on how many devices are ON in the case of several
S(on)max
* R
high-side drivers sharing the same R
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Solution 2 (see below).
16/23 Doc ID 10894 Rev 3
resistor.
GND
< 0: during reverse battery situations) is:
S(on)max
) in the input thresholds and the status output
GND
.
GND
becomes the sum of the
Page 17
VN920-EApplication information
3.1.2 Solution 2: diode (D
A resistor (R
= 1kΩ) should be inserted in parallel to D
GND
) in the ground line
GND
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network will produce a shift (≈600mV) in the input
threshold and in the status output values if the microprocessor ground is not common to the
device ground. This shift will not vary if more than one HSD shares the same diode/resistor
network.
Series resistor in INPUT lines is also required to prevent that, during battery voltage
transient, the current exceeds the absolute maximum rating.
Safest configuration for unused INPUT pin is to leave it unconnected, while unused SENSE
pin has to be connected to ground pin.
3.2 Load dump protection
Dld is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the
V
max DC rating. The same applies if the device is subject to transients on the VCC line
CC
that are greater than the ones shown in the ISO T/R 7637/1 table.
3.3 MCU I/Os protection
if the device drives an
GND
If a ground protection network is used and negative transient are present on the VCC line,
the control pins will be pulled negative. ST suggests to insert a resistor (R
) in line to
prot
prevent the µC I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of μC and the
current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of μC
I/Os.
-V
CCpeak/Ilatchup
≤ R
prot
≤ (V
OHµC-VIH-VGND
) / I
IHmax
Calculation example:
For V
5kΩ ≤ R
Recommended values: R
CCpeak
prot
= - 100V and I
≤ 65kΩ.
latchup
prot
≥ 20mA; V
=10kΩ.
OHµC
≥ 4.5V
Doc ID 10894 Rev 317/23
Page 18
Package and packing informationVN920-E
4 Package and packing information
4.1 ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
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