– Proportional load current sense
– Thermal shutdown indication on both the
high and low-side switches
Applications
■ DC motor driving in full or half-bridge
configuration
■ All types of resistive, inductive and capacitive
loads
Table 1.Device summary
Package
V
CC
36 V
SO-28
Description
The VN5772AK-E is a device formed by three
monolithic chips housed in a standard SO-28
package: a double high-side and two low-side
switches. The double high-side is made using
STMicroelectronics
while the low-side switches are fully protected
VIPower M0-5 OMNIFET III. This device is
suitable to drive a DC motor in a bridge
configuration as well as to be used as a quad
switch for any low-voltage application. The dual
high-side switches integrate built-in non latching
thermal shutdown with thermal hysteresis. An
output current limiter protects the device in
overload conditions. In the case of long overload
duration, the device limits the dissipated power to
a safe level-up to thermal shutdown intervention.
An analog current sense pin delivers a current
proportional to the load current (according to a
known ratio) and indicates overtemperature
shutdown of the relevant high-side switch through
a voltage flag.The low-side switches have built-in
non latching thermal shutdown with thermal
hysteresis, linear current limitation and
overvoltage clamping. In case of long overload
duration, the low-side switches limit the dissipated
power to a safe level up to the thermal shutdown
intervention. Fault feedback for overtemperature
shutdown of the low-side switch is indicated by
the relevant status pin.
16, 17SOURCE 4 Source of switch 4 (low-side switches)
22, 23SOURCE 2 Source of switch 2 (high-side switches)
20, 21SOURCE 1 Source of switch 1 (high-side switches)
26, 27SOURCE 3 Source of switch 3 (low-side switches)
Figure 2.Configuration diagram (top view)
DRAIN 3
INPUT 3
DRAIN 3
STATUS 3
STATUS 3
V
CC
GND
INPUT 2
DRAIN 3
SOURCE 3
SOURCE 3
DRAIN 3
V
CC
SOURCE 2
SOURCE 2
INPUT 1
C.SENSE
V
CC
STATUS 4
STATUS 4
DRAIN 4
INPUT 4
DRAIN 4
6/34 Doc ID 16084 Rev 5
SOURCE 1
SOURCE 1
V
CC
DRAIN 4
SOURCE 4
SOURCE 4
DRAIN 4
Page 7
VN5772AK-EElectrical specification
2 Electrical specification
2.1 Absolute maximum ratings
Stressing the device above the rating listed in the “absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to the conditions in the tables below for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE program
and other relevant quality document.
Table 3.Dual high-side switch
SymbolParameterValueUnit
V
-V
- I
GND
I
OUT
- I
OUT
I
-I
CSENSE
V
CSENSE
E
MAX
V
ESD
V
ESD
T
T
DC supply voltage41V
CC
Reverse DC supply voltage0.3V
CC
DC reverse ground pin current200mA
DC output currentInternally limitedA
Reverse DC output current -12A
DC input current -1 to 10mA
IN
DC reverse C.SENSE pin current 200mA
V
Current sense maximum voltage
CC
+V
Maximum switching energy (single pulse)
(L = 3 mH; RL=0Ω; V
= I
(Typ.)
I
OUT
limL
)
=13.5V; T
bat
jstart
= 150 °C;
104mJ
Electrostatic discharge (human body model: R = 1.5 KΩ;
C = 100 pF)
– Input
– Current sense
– SOURCE
–V
CC
/DRAIN
n
n
4000
2000
5000
5000
Charge device model (CDM-AEC-Q100-011)750V
Junction operating temperature-40 to 150°C
j
Storage temperature-55 to 150 °C
stg
- 41
CC
V
V
V
V
V
V
Doc ID 16084 Rev 57/34
Page 8
Electrical specificationVN5772AK-E
Table 4.Low side switch
SymbolParameterValueUnit
V
I
I
-I
I
STAT
DSn
INn
Drain-source voltage (V
Input current -1 to 10mA
Drain current Internally limitedA
Dn
Reverse DC output current -4A
Dn
DC status current-1 to 10 mA
Electrostatic discharge (R = 1.5 KΩ, C = 100 pF):
V
ESD1
–Drain
– Supply, status, input
V
ESD2
T
Electrostatic discharge on output pins only
(R = 330 Ω, C = 150 pF)
2.3.1 Electrical characteristics for dual high-side switches
Values specified in this section are for 8 V < VCC<36V; -40°C<Tj< 150 °C, unless
otherwise specified (for each channel).
Table 6.Power section
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
V
USDhyst
R
V
clamp
I
L(off)
1. PowerMOS leakage included.
2. For each channel.
Operating supply
CC
voltage
Undervoltage
USD
shutdown
Undervoltage
shutdown hysteresis
On-state resistance
ON
Voltage clampIS = 20 mA414652V
I
Supply current
S
Off-state output
(2)
current
Output - VCC diode
V
F
voltage
(2)
4.51336V
3.54.5V
0.5V
= 3 A; Tj = 25 °C50
I
OUT
= 3 A; Tj = 150 °C100
OUT
I
= 3 A; V
OUT
Off-state: V
V
IN=VOUT
On-state: V
=0A
I
OUT
VIN=V
OUT
=25°C
T
j
V
IN=VOUT
T
=125°C
j
I
= 3A, Tj = 150 °C0.7V
OUT
= 5 V; Tj = 25 °C65
CC
= 13 V; Tj = 25 °C,
CC
= V
CC
=0V; VCC=13V,
=0V; VCC=13V,
= 0 V
SENSE
=13V; VIN=5V,
00.01 3
05
(1)
2
36mA
mΩI
(1)
5
µA
µA
Table 7.Switching (VCC = 13 V)
SymbolParameterTest conditionsMin.Typ.Max. Unit
t
d(on)
t
d(off)
(dV
/dt)onTurn-on voltage slopeRL = 6.5 Ω —
OUT
(dV
OUT
/dt)
Turn-on delay time RL = 6.5 Ω (see
Turn-off delay time RL = 6.5 Ω (see
Turn-off voltage slopeRL = 6.5 Ω —
off
Figure 4
Figure 4
)—25— µs
)—20— µs
See
Figure 15
See
Figure 17
—V/µs
—V/µs
Doc ID 16084 Rev 59/34
Page 10
Electrical specificationVN5772AK-E
Table 7.Switching (VCC = 13 V) (continued)
SymbolParameterTest conditionsMin.Typ.Max. Unit
W
ON
W
OFF
Table 8.Logic inputs
Switching energy
losses during t
won
Switching energy
losses during t
woff
RL = 6.5 Ω (see
RL = 6.5 Ω (see
Figure 4
Figure 4
)—0.24— mJ
)—0.2— mJ
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
V
I(hyst)
V
Table 9.Protection and diagnostics
Low-level input voltage0.9V
IL
I
Low-level input currentV
IL
High-level input voltage2.1V
IH
I
High-level input current V
IH
= 0.9 V1µA
IN
= 2.1 V10µA
IN
Input voltage hysteresis0.25V
I
= 1 mA5.57
Input voltage clamp
ICL
IN
= -1 mA-0.7
I
IN
(1)
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
= 13 V121824A
I
limH
DC short-circuit
current
CC
5V<VCC<36V24A
V
I
T
T
T
HYST
V
DEMAG
V
1. To ensure long-term reliability under heavy overload or short-circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
Short-circuit current
limL
during thermal cycling
Shutdown
TSD
temperature
Reset temperatureTRS + 1 TRS + 5°C
T
R
Thermal reset of
RS
STATUS
Thermal hysteresis
(T
- TR)
TSD
Turn-off output voltage
clamp
Output voltage drop
ON
limitation
= 13 V; TR < Tj < T
V
CC
= 2 A; V
I
OUT
I
= 0.1 A,
OUT
= -40 °C to 150 °C
T
j
(see
Figure 5
IN
)
TSD
150175200°C
135°C
= 0; L = 6 mH VCC - 41 V
7A
7°C
CC
- 46 V
- 52V
CC
25mV
10/34 Doc ID 16084 Rev 5
Page 11
VN5772AK-EElectrical specification
Table 10.Current sense (8 V < V
SymbolParameterTest conditionsMin. Typ. Max. Unit
K
K
K
K
I
OUT
I
OUT
I
OUT
I
OUT
/ I
/ I
/ I
/ I
SENSE
SENSE
SENSE
SENSE
0
1
2
3
< 16 V)
CC
I
= 0.35 A; V
OUT
SENSE
Tj = -40 °C to 50 °C
I
= 1 A; V
OUT
SENSE
Tj = -40 °C to 150 °C
Tj = 25 °C to 150 °C
I
= 2 A; V
OUT
SENSE
Tj = -40 °C to 150 °C
T
= 25 °C to 150 °C
j
I
= 6 A; V
OUT
T
= -40 °C to 150 °C
j
SENSE
Tj = 25 °C to 150 °C
= 0.5 V;
= 0.5 V;
= 4 V;
= 4 V;
1430 2140 2890
1470
2020
2610
1570
2020
2470
1740
2020
2320
1790
2020
2250
1890
2010
2140
1890
2010
2140
V
SENSE
I
SENSE0
V
SENSEH
I
SENSEH
t
DSENSE2H
t
DSENSE2L
Max analog sense output
voltage
Analog sense leakage
current
Analog sense output
voltage in overtemperature
condition
Analog sense output
current in overtemperature
condition
Delay response time from
rising edge of INPUT pin
Delay response time from
falling edge of INPUT pin
CAll functions of the device performed as designed after exposure to disturbance.
E
One or more functions of the device are not performed as designed after exposure to
disturbance and cannot be returned to proper operation without replacing the device.
14/34 Doc ID 16084 Rev 5
Page 15
VN5772AK-EElectrical specification
2.4 Electrical characteristics curves for dual high-side switches
Figure 6.Off-state output currentFigure 7.High-level input current
Figure 8.Input voltage clampFigure 9.Low level input voltage
Figure 10. High-level input voltageFigure 11. Input voltage hysteresis
Doc ID 16084 Rev 515/34
Page 16
Electrical specificationVN5772AK-E
Figure 12. On-state resistance vs T
case
Figure 13. On-state resistance vs V
Figure 14. Undervoltage shutdownFigure 15. Turn-on voltage slope
CC
Figure 16. I
LIMH
vs T
case
16/34 Doc ID 16084 Rev 5
Figure 17. Turn-off voltage slope
Page 17
VN5772AK-EElectrical specification
2.5 Electrical characteristics for low-side switch
Values specified in this section are for -40 °C < Tj < 150 °C, unless otherwise specified
Table 21.Protection and diagnostics (-40 °C < Tj < 150 °C, unless otherwise
Status low output
voltage
Status leakage current
STATUS pin input
capacitance
Status voltage clamp
= 1 mA0.5V
I
STAT
Normal operation,
V
= 5 V
STAT
Normal operation,
V
= 5 V
STAT
I
= 1 mA5.57
STAT
= -1 mA-0.7
I
STAT
10µA
100pF
specified)
SymbolParameterTest conditionsMin.Typ.Max.Unit
I
T
limH
I
limL
t
dlim
T
DC short-circuit currentV
Short-circuit current
during thermal cycling
Step response current limit V
Overtemperature shutdown150175200°C
TSD
Overtemperature reset135°C
R
= 13 V, V
DS
V
= 13 V, TR < Tj < T
DS
= 5 V, V
IN
= 5 V192738 A
IN
TSD
= 13 V20µs
DS
11A
V
Table 22.Truth table low-side driver
ConditionsInputDrainStatus
Normal operation
Overtemperature
18/34 Doc ID 16084 Rev 5
L
H
L
H
H
L
H
H
H
H
H
L
Page 19
VN5772AK-EElectrical specification
C
2.6 Electrical characteristics curves for low-side switch
Figure 18. Source diode forward
Vf (mV)
1000
950
900
850
800
750
700
650
600
550
500
012345 67
characteristics
Figure 19. Static drain source on-resistance
vs drain current (3 pin)
R
(mΩ)
DS(on)
14000
12600
11200
9800
8400
7000
5600
4200
2800
1400
0
00.511.522.533.544.5
Tj = 150
Tj = 25 °C
Tj = -40 °
Id (A)
Figure 20. Static drain source on-resistance
vs input voltage (3 pin)
R
(mΩ)
DS(on)
120
108
Id = 3 A
96
84
72
60
48
36
24
12
Tj = 150
Tj = 25 °C
Tj = -40 °C
Figure 21. Static drain source on-resistance
vs drain current
R
(mΩ )
DS(on)
120
110
100
90
80
70
60
50
40
30
20
01234567
A
B
D
F
0
22.533.544.555.566.57
Vin (V)
A : Vin = 3.5 V, Tj = 150 °C
B : Vin = 5 V, Tj = 150 °C
C : Vin = 3.5 V, Tj = 25 °C
Figure 22. Transfer characteristicsFigure 23. Output characteristics
Id (A)
35
33
31
29
27
25
B
C
A
23
21
19
17
15
2.533.544.555.5
Vin (V)
A: Tj = -40 °CB: Tj = 25 °CC: Tj = 150 °C
Id (A)
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
0.0
0.00.30.60.91.31.92.73.84.96.17.38.39.5
Id (A)
C
Id (A)
D : Vin = 5 V, Tj = 25 °C
E : Vin = 3.5 V, Tj = -40 °C
F : Vin = 5 V, Tj = -40 °C
V
(V)
DS
Vin = 3 V
E
Doc ID 16084 Rev 519/34
Page 20
Electrical specificationVN5772AK-E
Figure 24. Normalized on-resistance vs
temperature
Ron (mΩ)
100
90
80
70
60
50
40
30
20
10
0
-50-250255075100125150175
Iout = 2 A
Tj (° C)
Figure 25. Normalized input threshold vs
temperature
Vin th (V)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
-50 -250255075 100 125 150 175 200
Tj (°C)
Id = 1 mA
20/34 Doc ID 16084 Rev 5
Page 21
VN5772AK-EApplication information
3 Application information
Figure 26. Typical application schematic
Mostly motor bridge drivers use a reverse battery protection diode (D) inside supply rail.
This diode prevents a reverse current flow back to Vbatt in case the bridge gets disabled via
the logic inputs while motor inductance still carries energy. In order to prevent a hazardous
overvoltage at circuit supply terminal (V
), a blocking capacitor (C) is needed to limit the
CC
voltage overshoot. As basic orientation, 50 µF per 1 A load current is recommended. In
alternative, also a Zener protection (Z) is suitable.
Even if a reverse polarity diode is not present, it is recommended to use a capacitor or zener
at V
because a similar problem appears in case supply terminal of the module has
CC
intermittent electrical contact to the battery or gets disconnected while motor is operating.
Doc ID 16084 Rev 521/34
Page 22
Application informationVN5772AK-E
Figure 27. Recommended motor operation
e
e
s
s
i
i
w
w
k
k
c
c
o
o
l
l
c
c
r
r
n
n
e
e
t
t
o
o
i
i
n
n
t
t
u
u
a
a
r
r
o
o
e
e
C
C
a
a
p
p
o
o
P
P
Flyback energy charged
Flyback energy charged
into capacitor C
into capacitor C
n
p
p
o
o
t
t
s
s
r
r
o
o
t
t
o
o
m
m
e
e
v
v
i
i
s
s
s
s
Dead time to avoid cross conduction
Dead time to avoid cross conduction
n
o
o
i
i
t
t
a
a
r
r
e
e
p
p
o
o
o
o
t
t
o
se
se
i
i
mo
m
e
e
kw
kw
v
v
i
i
c
c
t
t
o
o
c
c
l
l
A
A
C
C
Flyback spike during cross
Flyback spike during cross
current protection time
current protection time
p
p
o
o
t
t
s
s
r
r
t
t
t
t
Input 1
Input 1
Input 2
Input 2
Input 3
Input 3
Input 4
Input 4
Vz
Vz
Vcc
Vcc
+I M
+I M
-I M
-I M
se
se
i
i
ckw
ckw
o
o
l
l
C
C
n
n
o
o
i
i
t
t
a
a
r
r
e
e
p
p
o
o
s
s
s
s
a
a
P
P
Flyback clamped
Flyback clamped
by Zener di ode Z
by Zener di ode Z
p
p
o
o
t
t
s
s
r
r
o
o
t
t
o
o
m
m
e
e
v
v
i
i
22/34 Doc ID 16084 Rev 5
Page 23
VN5772AK-EApplication information
Figure 28. Waveforms (high-side switches)
NORMAL OPERATION
INPUT
LOAD CURRENT
CURRENT SENSE
UNDERVOLTAGE
V
V
CC
INPUT
LOAD CURRENT
CURRENT SENSE
V
USD
USDhyst
INPUT
LOAD VOLTAGE
LOAD CURRENT
CURRENT SENSE
T
j
T
R
INPUT
LOAD CURRENT
SENSE CURRENT
T
TSD
T
RS
current
limitation
SHORT TO V
<Nominal
OVERLOAD OPERATION
power
limitation
OVERLOADNORMAL LOAD
CC
thermal cycling
<Nominal
I
LIMH
I
LIML
V
SENSEH
Doc ID 16084 Rev 523/34
Page 24
Application informationVN5772AK-E
3.1 Maximum demagnetization energy (V
Figure 29. Maximum turn-off current vs load inductance
I (A)
100
A
B
10
I (A)
1
0.1110100L (mH)
I (A)
100
C
HSD
LSD
= 13.5 V)
CC
(1)
A
B
10
I (A)
1
0.1110100L (mH)
A: Single pulse
B: Repetitive pulse Tj = 100 °C
VIN, I
L
C
Demagnetization
C: Repetitive pulse Tj = 125 °C
Demagnetization
Demagnetization
t
1. Values are generated with RL = 0 Ω
In case of repetitive pulses, T
the temperature specified above for curves B and C.
(at beginning of each demagnetization) of every pulse must not exceed
jstart
24/34 Doc ID 16084 Rev 5
Page 25
VN5772AK-EPackage and PC board thermal data
4 Package and PC board thermal data
4.1 SO-28 thermal data
Figure 30. SO-28 PC board
(1)
("1($'5
1. Layout condition of Rth and Zth measurements (Board finish thickness 1.6 mm +/- 10%; Board double
layers; Board dimension 77x86; Board Material FR4; Cu thickness 0.070mm (front and back side); Thermal
vias separation 1.2 mm; Thermal via diameter 0.3 mm +/- 0.08 mm; Cu thickness on vias 0.025 mm).
Figure 31. Chipset configuration
LOW-SIDE
CHIP
channel 3
R
thB
R
thAB
HIGH-SIDE
CHIP
channels 1,2
R
thA
R
thAC
LOW-SIDE
CHIP
channel 4
R
thC
R
thBC
Doc ID 16084 Rev 525/34
Page 26
Package and PC board thermal dataVN5772AK-E
Figure 32. Auto and mutual Rthj-amb vs PCB copper area in open box free air
condition
#7
1. See
Table 23.Thermal calculations in clockwise and anti-clockwise operation in steady-
Mutual thermal impedance junction-to-ambient between
high-side and low-side chips
Mutual thermal impedance junction-to-ambient between lowside chips
(1)
or HS2 in on-state)
1
(1)
26/34 Doc ID 16084 Rev 5
Page 27
VN5772AK-EPackage and PC board thermal data
Table 26.Thermal calculations in transient mode
T
jHS12
T
Z
jLS3
T
jLS4
Z
thHS
thHSLS
Z
thHSLS
x P
dHS12
x P
x P
+ Z
dHS12
dHS12
thHSLS
+ Z
+ Z
thLS
thLSLS
x (P
x P
dLS3
x P
dLS3
dLS3
+ P
+ Z
dLS4
thLSLS
+ Z
(1)
thLS
) + T
x P
x P
amb
dLS4
dLS4
+ T
+ T
amb
amb
1. Calculation is valid in any dynamic operating condition. Pd values set by user.
Figure 33. SO-28 HSD thermal impedance junction-ambient single pulse
#UFOOTPRINT
#UCM>
#UC M>
#UFOOTPRINT
#UCM>
#UC M>
#7
:4( (3$ CUAREA
TIMESEC
'!0'#&4
Doc ID 16084 Rev 527/34
Page 28
Package and PC board thermal dataVN5772AK-E
Figure 34. SO-28 LSD thermal impedance junction-ambient single pulse
:4( ,3$ CUAREA
#UFOOTPRINT
#UCM>
#UC M>
#UFOOTPRINT
#UCM>
#UC M>
:
LS
#7
:
LSLS
TIMESEC
Equation 1: Pulse Calculation Formula
Z
THδ
R
TH
δ Z
THtp
1 δ–()+⋅=
where δ = tP/T
'!0'#&4
28/34 Doc ID 16084 Rev 5
Page 29
VN5772AK-EPackage and PC board thermal data
Figure 35. Thermal fitting model of an H-bridge in SO-28
("1($'5
Table 27.Thermal parameters
Area/island (cm
2)
(1)
FP416
R1 = R5 = R6 = R10 (°C/W)1.5
R2 = R7 = R11 (°C/W)5.5
R3 (°C/W)363432
R4 (°C/W)504336
R8 = R12 (°C/W)403836
R9 = R13 (°C/W)545250
R14 = R15 (°C/W)120
R16 = R17 (°C/W)200
R18 (°C/W)400350300
C1 = C5 (W·s/°C)0.00025
C2 = C7 = C11 (W·s/°C)0.04
C3 (W·s/°C)0.2
C4 (W·s/°C)2.234
C6 = C10 (W·s/°C)0.00075
C8 = C12 (W·s/°C)0.15
C9 = C13 (W·s/°C)1.61.82
1. A blank space means that the value is the same as the previous one
Doc ID 16084 Rev 529/34
Page 30
Package and packing informationVN5772AK-E
5 Package and packing information
5.1 ECOPACK® package
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com
ECOPACK
®
is an ST trademark.
5.2 Package mechanical data
Figure 36. SO-28 package dimensions
.
30/34 Doc ID 16084 Rev 5
Page 31
VN5772AK-EPackage and packing information
Table 28.SO-28 mechanical data
Millimeters
Symbol
Min.Typ.Max.
A2.65
a10.100.30
b0.350.49
b10.230.32
C0.50
c145° (typ.)
D17.718.1
E10.0010.65
e1.27
e316.51
F7.407.60
L0.401.27
S8° (max.)
Doc ID 16084 Rev 531/34
Page 32
Package and packing informationVN5772AK-E
5.3 Packing information
Figure 37. SO-28 tube shipment (no suffix)
Base q.ty28
Bulk q.ty700
C
B
A
Figure 38. Tape and reel shipment (suffix “TR”)
Tube length (± 0.5)532
A3.5
B13.8
C (± 0.1)0.6
All dimensions are in mm.
Reel dimensions
Base Q.ty1000
Bulk Q.ty1000
A (max)330
B (min)1.5
C (± 0.2)13
F20.2
G (+ 2 / -0)16.4
N (min)60
T (max)22.4
Figure 35: Thermal fitting model of an H-bridge in SO-28
Table 27: Thermal parameters
:
/dt)
/dt)
on
off
to t
to t
r
f
OUT
OUT
Doc ID 16084 Rev 533/34
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