The VN450 is a monolithic device made using
SGS-THOMSONVerticalIntelligentPower
Technology, intended for driving resistive or
inductive loads with one side connected to
ground. This device has three independant
channelsand threediagnostics.
BLOCK DIAGRAM
Power SO-20
TM
Built-in thermal shut-down protects the chip from
over temperatureand short circuit.
The control inputs are 5V CMOS logic level
compatible.
The open drain diagnostic outputs indicate short
circuit(no load) and overtemperaturestatus.
February 1998
SC09570
1/9
Page 2
VN450
ABSOLUTEMAXIMUMRATING
Symb o lPara met erVal u eUni t
V
-V
-I
I
OUT 1,2
I
OUT 3
I
R1,2
I
R3
I
IN 1,2 ,3
I
STAT 1 ,2, 3
V
ESD
P
T
T
CONNECTION DIAGRAM
Supply V olt a ge ( con ti nuous )45V
CC
Reverse Supply V olt ag e (cont i nuous)-0. 3V
CC
Reverse Ground Current-200mA
gnd
Out put Curr ent (cont inuou s) , channels 1, 210A
Out put Curr ent (cont inuou s) , channel 32.5A
Reverse Outp ut Current (c ontinuous) channels 1, 2-10A
Reverse Outp ut Current (c ontinuous) channel 3-2. 5A
Input Current±10mA
Status Output Current±10mA
Electrostatic Discharge (R=1.5 kΩ, C=100 pF)2000V
Power Dis sipation at Tc≤ 25oC95W
(With a series resistor ≥ 1KΩin input and status pins).
IIIII IIVDelays and
IIIIIIIV
TEST LEVEL S
Impedance
TEST LEVELS RESULTS
CLAS SCONTENTS
CAll f unction of the dev ice are per f ormed as designe d afte r exposur e to distu rbance.
EO ne or m or e functions of t he device is not perfor med as desig ned af ter exposure and
cannot be retu rned t o pr op er operation without replacing the device.
3/9
Page 4
VN450
THERMALDATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case (1)Max1.3
Ther mal Resis t ance Junct io n- ambien tMax50
ELECTRICAL CHARACTERISTICS (VCC=13 V; -40oC<Tj<125oC unless otherwisespecified)
POWER
SymbolParameterTest ConditionsMin.Typ.Max.Un it
V
V
V
R
I
Oper at i ng S u pply
CC
5.51336V
Volt age
usd
Under Voltage
345.5V
Shut-Down
Ov ervoltage S hut - D own363945V
ov
On Stat e Resist a nceI
on
I
I
I
Supply CurrentOf f stat eT
S
On state
=2ATj=25oC
OUT 1,2
=2A
OUT 1,2
=0.5ATj=25oC
OUT 3
= 0.5 A
OUT 3
case
=25oC
30
4.2
300
540
o
o
40
75
60
10
C/W
C/W
mΩ
mΩ
mΩ
mΩ
µA
mA
LOGIC INPUT (Channel1,2,3)
SymbolParameterTest ConditionsMin.Typ.Max.Un it
V
Input Low Level
IL
(*)1.5V
Volt age
V
Input Hig h Lev el
IH
(*)3.5V
Volt age (see note 1)
V
I(hyst.)
Input Hysteresis
0.20.851.5V
Volt age
I
V
(*) : The input voltage is internally clamped at 6V about. Itis possible to connect this pin to an higher voltage via an external resistor
provided the input current does not exceed 10 mA.
Input CurrentVIN=5VT
IN
Input Cla m p Volt ag eIIN=10mA
ICL
=-10mA
I
IN
=25oC100µA
case
56
7V
-0.7
SWITCHING(VCC=13V;Tj=25oC; input rise time < 0.1µs)
SymbolParameterTest ConditionsMin.Typ.Max.Un it
t
d(on)
t
t
d(off)
t
di/dt
di/dt(
Turn-on Delay Time Of
Out put Cu r rent
Rise Time Of Output
r
Current
Turn-off Delay Time Of
Out put Cu r rent
Fall T ime Of Output
f
Current
Tur n-on Current SlopeR1=6.5Ω Channe ls 1,2
(on)
Tur n-of f C urrent SlopeR1=6.5Ω Channe ls 1,2
off)
R1=6.5Ω Channe ls 1,2
=26Ω C hannels 3
R
1
R1=6.5Ω Channe ls 1,2
=26Ω C hannels 3
R
1
R1=6.5Ω Channe ls 1,2
=26Ω C hannels 3
R
1
R1=6.5Ω Channe ls 1,2
=26Ω C hannels 3
R
1
=26Ω C hannels 3
R
1
=26Ω C hannels 3
R
1
10
2
32
8
40
20
150
20
12030300
75
32
8
80
20
0.02
0.02
0.02
0.02
140
70
300
60
600
150
160
50
0.05
0.05
0.05
0.05
V
µs
µs
µs
µs
µs
µs
µs
µs
A/µs
A/µs
A/µs
A/µs
4/9
Page 5
VN450
ELECTRICAL CHARACTERISTICS (continued)
PROTECTIONS AND DIAGNOSTICS
SymbolParameterTest ConditionsMin.Typ.Max.Un it
T
TSD
T
T
RSD
(HYST)
V
ENOL
I
OL
I
OV
I
AV
V
STAT 1 ,2,3
V
SCL1,2,3
t
POL
t
POVL
V
DEMAG
(∗) ISO definitions T
Ther mal Shut-d own
150170190
Tem perature
TR
Ther mal Reset
135
Tem perature
Thermal Hysteresis51 530
Out put Voltage
8V ≤ VCC ≤ 36V5.26.68V
Aut horizing O penl oad
Detection
Open Load Cur rent
Level
Over CurrentR1≤10 mΩ c hannel s 1,2
Aver age Current in
Short Circuit
St at us O ut put Volt a geI
St at us Clam p Volt ageI
Channels 1,28V ≤ VCC≤ 18 V
Channels 38V ≤ V
≤10 mΩ c hannel 3
R
1
R1≤10 mΩ T
Ca se
CC
=85oC
≤ 30 V
channels 1,2
channel 3
= 1.6 mA (Faul t Condition)0.4V
STAT
=10mA
STAT
I
=-10mA
STAT
1005450
50
10
2
18
3.5
3.4
2
5.56
-0.7
St at us Delay(∗) (s e e f igure 1)50300950µ s
St at us Delay(∗) (see f igure 1)10µs
Tur n-of f O utput Cl amp
Volt age
= Statusdelay in case of open load conditions
POL
T
= Status delay in case of over load conditions
POVL
I
=2AL=1mH V
OUT 1
=2AL=1mH V
I
OUT 2
= 0.5 A L = 1 mH V
I
OUT 3
IN1
IN2
IN3
=0
=0
=0
V
-45 VCC-50 VCC-55V
CC
800
100mAmA
7V
o
C
o
C
o
C
A
A
A
A
V
5/9
Page 6
VN450
FIGURE 1
SWITCHING PARAMETERS TESTCONDITIONS
TRUTH TABLE (Channels 1,2,3)
ConditionsINPUTOUTPUTSTATUS
Normal Opera ti onL
H
Ov er- voltageXLH
Under-voltageXLH
Ther mal s hut-downHLL
Open loadHHL
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may resultsfrom its use. No
license is granted by implication or otherwise under anypatent orpatent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts are notauthorized for useas critical componentsin life supportdevices or systems without express
written approval ofSGS-THOMSON Microelectonics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany- Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain- Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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