Datasheet VN16BSP Datasheet (ST)

VN16BSP

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

Table 1. General Features

Typ e

VN16BPS 40 V 0.06 Ω 5.6 A 26 V

■ MAXIMUM CONTINUOUS OUTPUT

V

DSS

CURRENT: 20 A @ T

■ 5V LOGIC LEVEL COMPATIBLE INPUT

■ THERMAL SHUT-DOWN

■ UNDER VOLTAGE PROTECTION

■ OPEN DRAIN DIAGNOSTIC OUTPUT

■ INDUCTIVE LOAD FAST DEMAGNETIZATION

■ VERY LOW STAND-BY POWER

R

DS(on)

= 85°C

c

I

OUT

V

CC

DISSIPATION

DESCRIPTION

The VN16BPS is a monolithic device made using
STMicroelectronics VIPower Technology,
intended for driving resistive or inductive loads
with one side grounded.

Built-in thermal shut-down protects the chip from
over temperature and short circuit.

The open drain diagnostic output indicates: open
load in off state and in on state, output shorted to

and overtemperature. Fast demagnetization

V

CC

of inductive loads is achieved by negative (-18V)
load voltage at turn-off.

Figure 1. Package

10

1

PowerSO-10

Table 2. Order Codes

Package Tube Tape and Reel

PowerSO-10 VN16BSP VN16BSP13TR

REV. 2

1/11June 2004

VN16BSP

Figure 2. Block Diagram

Table 3. Absolute Maximum Ratings

Symbol Parameter Value Unit

I

OUT

V

Drain-Source Breakdown Voltage 40 V

(BR)DSS

I

OUT

Output Current (cont.) at Tc = 85 °C 20 A

(RMS) RMS Output Current at Tc = 85 °C 20 A

Reverse Output Current at Tc = 85 °C (f > 1Hz) –20 A

Input Current ±10 mA

Reverse Supply Voltage –4 V

Status Current ±10 mA

Electrostatic Discharge (1.5 kΩ, 100 pF) 2000 V

Power Dissipation at Tc = 25 °C 82 W

Junction Operating Temperature -40 to 150 °C

Storage Temperature -55 to 150 °C

– V

I

STAT

V

P

T

I

R

I

IN

CC

ESD

tot

T

j

stg

2/11

Figure 3. Connection Diagrams

Figure 4. Current and Voltage Conventions

VN16BSP

Table 4. Thermal Data

Symbol Parameter Value Unit

R

thj-case

R

thj-amb

Note: 1. When mounted using minimum recommended pad size on FR-4 board.

Thermal Resistance Junction-case Max 1.5 °C/W

Thermal Resistance Junction-ambient

(1)

Max

50 °C/W

3/11

VN16BSP

ELECTRICAL CHARACTERISTICS

(8 < V

Table 5. Power

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

Note: 2. In= Nominal current according to ISO definition for high side automotive switch. The Nominal Current is the current at Tc = 85 °C

Table 6. Switching

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(di/dt)

(di/dt)

Note: 3. See Switching Time Waveforms.

< 16 V; -40 ≤ Tj ≤ 125 °C unless otherwise specified)

CC

V

I

n

R

I

DS(MAX)

R

Supply Voltage 6 13 26 V

CC

(2)

Nominal Current Tc = 85 °C; V

On State Resistance I

on

Supply Current Off State; V

S

Maximum Voltage Drop I

Output to GND Internal

j

= In; V

OUT

= 20 A; V

OUT

Tj = 25 °C 5 10 20 KΩ

Impedance

for battery voltage of 13V which produces a voltage drop of 0.5 V.

(3)

t

d(on)

t

t

d(off)

t

V

demag

Turn-on Delay Time Of
Output Current

(3)

r

Rise Time Of Output
Current

(3)

Turn-off Delay Time Of
Output Current

(3)

f

Fall Time Of Output
Current

Turn-on Current Slope R

on

Turn-off Current Slope R

off

Inductive Load Clamp

R

= 1.6 Ω 5 50 500 µs

load

R

= 1.6 Ω 40 100 680 µs

load

R

= 1.6 Ω 10 100 500 µs

load

R

= 1.6 Ω 40 100 680 µs

load

= 1.6 Ω; V

load

= 1.6 Ω; V

load

R

= 1.6 Ω; L = 1 mH –24 –18 –14 V

load

Voltage

≤ 0.5; V

DS(on)

= 13 V; Tj = 25 °C 0.038 0.06 Ω

CC

= 13 V; Tj ≥ 25 °C 25 50 µA

CC

= 13 V; Tc = 85 °C 1 1.8 V

CC

= 13 V 0.008 0.1 A/µs

CC

= 13 V 0.008 0.1 A/µs

CC

= 13 V 5.6 8.8 A

CC

Table 7. Logic Input

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

V

I(hyst)

I

IN

V

ICL

Note: 4. The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated

4/11

Input Low Level Voltage 1.5 V

IL

Input High Level Voltage 3.5 Note 4 V

IH

Input Hysteresis Voltage 0.2 1 1.5 V

Input Current VIN = 5 V; Tj = 25 °C 100 µA

Input Clamp Voltage IIN = 10 mA

to not exceed 10 mA at the input pin.

= –10 mA

I

IN

56

–0.7

7V

V

VN16BSP

ELECTRICAL CHARACTERISTICS (cont’d)

Table 8. Protection and Diagnostics (cont’d)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

STAT

V

USD

V

SCL

T

TSD

T

SD(hyst.)

T

R

V

OL

I

OL

t

povl

t

pol

Note: 5. I

6. t

Status Voltage Output Low I

Under Voltage Shut Down 3.5 5 6 V

Status Clamp Voltage I

Thermal Shut-down Temperature 140 160 180 °C

Thermal Shut-down Hysteresis 15 50 °C

Reset Temperature 125 °C

(5)

Open Voltage Level Off-State 2.5 3.8 5 V

Open Load Current Level On-State 0.15 0.85 A

(6)

Status Delay 5 10 µs

(6)

Status Delay 50 400 2500 µs

= (VCC -VOL)/ROL (see figure 5).

OL(off)

: ISO definition (see figure 6).

povl tpol

= 1.6 mA 0.4 V

STAT

STAT

I

STAT

= 10 mA
= –10 mA

56

–0.7

7V

V

Figure 5. Note 5 relevant figure Figure 6. Note 6 relevant figure

5/11

VN16BSP

Figure 7. Switching Time Waveforms

FUNCTIONAL DESCRIPTION

The device has a diagnostic output which
indicates open load in on-state, open load in off­state, over temperature conditions and stuck-on to

.

V

CC

From the falling edge of the input signal, the status
output, initially low to signal a fault condition
(overtemperature or open load on-state), will go
back to a high state with a different delay in case
of overtemperature (tpovl) and in case of open
load (tpol) respectively. This feature allows to
discriminate the nature of the detected fault. To
protect the device against short circuit and over
current condition, the thermal protection turns the
integrated Power MOS off at a minimum junction
temperature of 140 °C. When this temperature
returns to 125°C the switch is automatically turned
on again. In short circuit the protection reacts with
virtually no delay, the sensor being located inside
the Power MOS area. An internal function of the
devices ensures the fast demagnetization of
inductive loads with a typical voltage (V
18V. This function allows to greatly reduces the
power dissipation according to the formula:

= 0.5 • L

P

dem

V

demag

] • f

load

• (I

)2 • [(VCC+V

load

where f = switching frequency and
V

= demagnetization voltage

demag

The maximum inductance which causes the chip
temperature to reach the shut-down temperature
in a specified thermal environment is a function of
the load current for a fixed V

CC

, V

demag

demag

demag

and f

) of -

according to the above formula. In this device if the
GND pin is disconnected, with V

not exceeding

CC

16V, it will switch off.

PROTECTING THE DEVICE AGAINST
REVERSE BATTERY

The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(Figure 10).

The consequences of the voltage drop across this
diode are as follows:

– If the input is pulled to power GND, a negative

voltage of -V
thresholds and V

is seen by the device. (VIL, V

f

are increased by Vf with

STAT

respect to power GND).

– The undervoltage shutdown level is increa- sed

.

by V

f

If there is no need for the control unit to handle
external analog signals referred to the power

)/

GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in Figure 10), which
becomes the common signal GND for the whole
control board avoiding shift of V

, VIL and V

IH

This solution allows the use of a standard diode.

STAT

IH

.

6/11

Table 9. Truth Table

Input Output Diagnostic

Normal Operation L

Over-temperature X L L

Under-voltage X L H

Short load to V

Open Circuit H

Note: 7. With an additional external resistor.

CC

H

H

L

L

L

H

H
H

H

L

Figure 8. Waveforms

VN16BSP

H
H

L
L

L

(7)

L

7/11

VN16BSP

Figure 9. Over Current Test Circuit

Figure 10. Typical Application Circuit With A Schottky Diode For Reverse Supply Protection

Figure 11. Typical Application Circuit With Separate Signal Ground

8/11

PACKAGE MECHANICAL

Table 10. Power SO-10 Mechanical Data

Symbol

A3.35 3.65

(8)

A

A1 0.00 0.10

B0.40 0.60

(8)

B

C0.35 0.55

(8)

C

D9.40 9.60

D1 7.40 7.60

E9.30 9.50

E2 7.20 7.60

(8)

E2

E4 5.90 6.10

(8)

E4

e1.27
F1.25 1.35

(8)

F

H 13.80 14.40

(8)

H

h0.50
L1.20 1.80

(8)

F

a

(8)

α

Note: 8. Muar only POA P013P.

Min Typ Max

3.4 3.6

0.37 0.53

0.23 0.32

7.30 7.50

5.90 6.30

1.20 1.40

13.85 14.35

0.80 1.10

0º 8º

2º 8º

VN16BSP

millimeters

Figure 12. Power SO-10 Package Dimensions

10

HE

A

A1

Note: Drawing is not to scale.

1

eB

0.25

D

h

F

= =

D1

= =

E2

DETAIL "A"

DETAI L "A"

B

0.10 A

SEATING

PLANE

A

C

α

B

E4

SEATING
PLANE

A1

L

P095A

9/11

VN16BSP

REVISION HISTORY

Table 11. Revision History

Date Revision Description of Changes

March-1998 1 First Issue

18-June-2004 2 Stylesheet update. No content change.

10/11

VN16BSP

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