Datasheet VN4012L, VN3515L Datasheet (Supertex)

Ordering Information

VN3515L
VN4012L

N-Channel Enhancement-Mode
Vertical DMOS FETs

BV

/R

DSS

BV

DGS

350V 15Ω 1.8V 0.15A VN3515L
400V 12Ω 1.8V 0.15A VN4012L

DS(ON)

(max) (max) (min) TO-92

V

GS(th)

I

D(ON)

Order Number / Package

Features

❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
❏ Low C
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices

and fast switching speeds

ISS

Applications

❏ Motor controls
❏ Converters
❏ Amplifiers
❏ Telecom Switching
❏ Power supply circuits
❏ Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex's well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher­ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.

Package Option

Absolute Maximum Ratings

Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C

* Distance of 1.6 mm from case for 10 seconds.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

DSS

DGS

Note: See Package Outline section for dimensions.

1

S G D

TO-92

VN3515L/VN4012L

Thermal Characteristics

Package ID (continuous)* ID (pulsed) Power Dissipation

@ TC = 25°C °C/W °C/W

VN3515L (TO-92) 150mA 600mA 1W 125 170 150mA 600mA
VN4012L (TO-92) 160mA 650mA 1W 125 170 160mA 650mA

ID (continuous) is limited by max rated Tj.

*

θ

jc

θ

ja

IDR*I

Electrical Characteristics (@ 25°C unless otherwise specified)

Symbol Parameter Min Typ Max Unit Conditions

BV

DSS

Drain-to-Source
Breakdown Voltage

V

GS(th)

I

GSS

I

DSS

I

D(ON)

R

DS(ON)

G

FS

C

ISS

C

OSS

C

RSS

t

d(ON)

t

r

t

d(OFF)

t

f

V

SD

Notes:

1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

3. See TN2540 data sheet for characteristic curves.

Gate Threshold Voltage 0.6 1.8 V VGS = VDS, ID = 1mA
Gate Body Leakage 10 nA VGS = ± 20V, VDS = 0V
Zero Gate Voltage Drain Current 1 VGS = 0V, VDS = 0.8 Max Rating

ON-State Drain Current 0.15 0.3 A VDS = 10V, VGS = 4.5V

Static Drain-to-Source
ON-State Resistance

Forward Transconductance 125 350 m VDS =15V, ID = 100mA
Input Capacitance 110
Common Source Output Capacitance 30 pF
Reverse Transfer Capacitance 10
Turn-ON Delay Time 20
Rise Time 20
Turn-OFF Delay Time 65
Fall Time 65
Diode Forward Voltage Drop 1.2 V VGS = 0V, ISD = 160mA

VN3515 350
VN4012 400

VN3515

VN4012

VV

100 µAV

9.5 15 V
17 35 V

9.5 12 V

Ω

17 30 V

Ω

ns

= 0V, ID = 100µA

GS

= 0V, VDS = 0.8 Max Rating

GS

T

= 125°C

A

= 4.5V, ID = 100mA

GS

= 4.5V, ID = 100mA, TA = 125°C

GS

= 4.5V, ID = 100mA

GS

= 4.5V, ID = 100mA, TA = 125°C

GS

V

= 25V, VGS = 0V

DS

f = 1MHz

VDD = 25V
ID = 100mA
R

= 25Ω

GEN

DRM

Switching Waveforms and Test Circuit

10V

INPUT

10%

0V

V

DD

OUTPUT

0V

©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.

t

d(ON)

t

(ON)

10%

90%

t

r

90%

t

d(OFF)

t

(OFF)

t

F

90%

10%

2

PULSE

GENERATOR

R

gen

INPUT

1235 Bordeaux Drive, Sunnyvale, CA 94089

V

DD

R

L

OUTPUT

D.U.T.

11/12/01

TEL: [phone] • FAX: [phone]

www.supertex.com