Page 1
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
/R
BV
DSS
DGS
DS(ON)
(max) (max) TO-92 14-Pin P-DIP TO-243AA* Die
50V 0.3Ω 2.4V VN3205N3 VN3205N6 VN3205N8 VN3205ND
* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
†
MIL visual screening available
V
GS(th)
VN3205
Order Number / Package
†
Product marking for TO-243AA:
VN2L❋
Where ❋ = 2-week alpha date code
Features
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
❏ Low C
and fast switching speeds
ISS
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices
Applications
❏ Motor controls
❏ Converters
❏ Amplifiers
❏ Switches
❏ Power supply circuits
❏ Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
DSS
DGS
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermallyinduced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
1
D
1
2
G
1
3
S
1
4
NC NC
5
S
2
6
G
2
7
D
2
top view
14-pin DIP
S G D
TO-92
Note: See Package Outline section for dimensions.
14
D
4
13
G
4
12
S
4
11
10
S
3
9
G
3
8
D
3
G
D
S
TO-243AA
(SOT-89)
D
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1
Page 2
Thermal Characteristics
VN3205
Package ID (continuous)* ID (pulsed) Power Dissipation
θ
jc
θ
ja
IDR*I
@ TC = 25°C °C/W °C/W
TO-92 1.2A 8.0A 1.0W 125 170 1.2A 8.0A
83.3
†
‡
1.5A 8.0A
1.5A 8.0A
SOT-89 1.5A 8.0A 1.6W (TA = 25°C) 15 78
Plastic DIP 1.5A 8.0A 3.0W
ID (continuous) is limited by max rated Tj. TA = 25°C.
*
†
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
‡
Total for package.
‡
41.6
‡
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BV
V
GS(th)
∆V
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
DSS
GS(th)
Drain-to-Source Breakdown Voltage 50 V VGS = 0V, ID = 10mA
Gate Threshold Voltage 0.8 2.4 V VGS = VDS, ID = 10mA
Change in V
with Temperature -4.3 -5.5 mV/°CVGS = VDS, ID = 10mA
GS(th)
Gate Body Leakage 1 100 nA VGS = ±20V, VDS = 0V
Zero Gate Voltage Drain Current 10 µAV
1mA V
= 0V, VDS = Max Rating
GS
= 0V, VDS = 0.8 Max Rating
GS
= 125°C
T
A
ON-State Drain Current 3.0 14 A VGS = 10V, VDS = 5V
Static Drain-to-Source
ON-State Resistance
TO-92 and P-DIP 0.45 Ω VGS = 4.5V, ID = 1.5A
SOT-89 0.45 Ω VGS = 4.5V, ID = 0.75A
TO-92 and P-DIP 0.3 Ω V
= 10V, ID = 3A
GS
SOT-89 0.3 Ω VGS = 10V, ID = 1.5A
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Change in R
Forward Transconductance 1.0 1.5 VDS = 25V, ID = 2A
with Temperature 0.85 1.2 %/°CVGS = 10V, ID = 3A
DS(ON)
Ω
Input Capacitance 220 300
Common Source Output Capacitance 70 120 pF
VGS = 0V, VDS = 25V
f = 1 MHz
Reverse Transfer Capacitance 20 30
Turn-ON Delay Time 10
Rise Time 15
Turn-OFF Delay Time 25
ns
VDD = 25V
ID = 2A
R
= 10Ω
GEN
Fall Time 25
Diode Forward Voltage Drop 1.6 V VGS = 0V, ISD = 1.5A
Reverse Recovery Time 300 ns VGS = 0V, ISD = 1A
V
DD
Switching Waveforms and Test Circuit
R
L
OUTPUT
D.U.T.
INPUT
OUTPUT
10V
0V
V
0V
90%
10%
t
(ON)
t
d(ON)
DD
10%
90%
t
r
t
d(OFF)
t
(OFF)
t
F
90%
10%
PULSE
GENERATOR
R
gen
INPUT
DRM
2
Page 3
Typical Performance Curves
VN3205
Output Characteristics
20
16
12
(amperes)
8
D
I
4
0
0102030 5040
VDS (volts)
Transconductance vs. Drain Current
5
V
= 25V
4
DS
VGS =
10V
8V
6V
4V
3V
Saturation Characteristics
20
16
12
(amperes)
8
D
I
4
0
0246 108
V
DS
Power Dissipation vs. Temperature
2.0
TO-243AA (TA = 25°C)
1.6
P-DIP
VGS =
10V
8V
6V
4V
3V
(volts)
3
(siemens)
2
FS
G
1
0
042
10
1.0
(amperes)
D
I
0.1
TA = -55°C
25°C
125°C
6108
ID (amperes)
Maximum Rated Safe Operating Area
TO-92 (pulsed)
P-DIP (pulsed)
TO-243AA (DC)
TO-92 (DC)
P-DIP (DC)
TO-243AA
(pulsed)
1.2
(watts)
D
0.8
P
0.4
0
1.0
0.8
0.6
0.4
TO-92
0 15010050
TC (°C)
Thermal Response Characteristics
TO-243AA
TA = 25°C
P
= 1.6W
D
1257525
.01
0 100101
TC = 25°C
0.2
Thermal Resistance (normalized)
TO-92
P
= 1W
D
TC = 25°C
0
0.001 100.01 0.1 1.0
V
DS
(volts)
tp (seconds)
3
Page 4
Typical Performance Curves
BV
Variation with Temperature
DSS
1.1
VN3205
On-Resistance vs. Drain Current
1.0
1.0
DSS
BV (normalized)
0.9
-50 0 50 100 150
C)°(T
j
Transfer Characteristics
10
VDS= 25V
8
6
(amperes)
4
D
I
2
T
A
= -55°C
25°C
125°C
0.8
0.6
VGS = 4.5V
(ohms)
0.4
DS(ON)
R
0.2
0
04812 2016
(amperes)
I
D
V
and R Variation with Temperature
DS(ON)GS(th)
1.2
R
1.1
1.0
(normalized)
0.9
GS(th)
V
0.8
DS(ON)
VGS = 10V
@ 10V, 3A
V
GS(th)
@ 1mA
1.6
1.4
1.2
1.0
0.8
(normalized)
DS(ON)
R
0
0246810
(volts)
V
GS
Capacitance vs. Drain-to-Source Voltage
400
f = 1MHz
300
C
ISS
200
C (picofarads)
100
0
010203040
C
OSS
C
RSS
VDS(volts)
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
0.7
-50 0 50 100 150
0.6
Tj (°C)
Gate Drive Dynamic Characteristics
10
V
= 10V
8
6
DS
V
DS
325 pF
= 40V
(volts)
GS
4
V
2
215 pF
0
012
Q (nanocoulombs)
G
3
45
11/12/01
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
4
www.supertex.com
Loading...