Datasheet TEA6811V-C2-R1, TEA6810V-C2-R1 Datasheet (Philips)

DATA SH EET

Product specification
Supersedes data of September 1994
File under Integrated Circuits, IC01

1996 Jun 18

INTEGRATED CIRCUITS

TEA6810V; TEA6811V

Front-end and PLL synthesizers for
car radios

1996 Jun 18 2

Philips Semiconductors Product specification

Front-end and PLL synthesizers for
car radios

TEA6810V; TEA6811V

FEATURES

• Synthesizer function which includes a Voltage
Controlled Oscillator (VCO), dividers, phase detector,
charge-pump and in-lock detector

• FM mixer with AGC

• AM RF amplifier with AGC

• AM mixer.

APPLICATIONS

• Car radios.

GENERAL DESCRIPTION

The TEA6810V and TEA6811V, together with TEA6821V
forms an AM/FM receiving concept for electronically tuned
car radios.

The TEA681xV is an FM/AM front-end with one local
synthesized oscillator for both AM and FM which is used
together with the TEA6821T in a double-conversion
concept. It delivers a first FM-IF of 72.2 MHz and, for
MW/LW, a first AM-IF of 10.7 MHz.

Minimum alignments are required due to wideband RF
inputs and the common AM/FM VCO.

High dynamic behaviour and minimum distortion is
obtained by a special RF input design combined with AGC.
High sensitivity is possible in combination with RF input
FETs.

Minimum interference is experienced due a to special
synthesizer loop design and ensuring that the I

2

C-bus is

inoperative in the locked-tuned condition.
The reference frequency for the synthesizer and the

I2C-bus information is delivered by the TEA6821V.
The programmable local/dx switch enables switching the

gain of the FM mixer from normal AGC control (FM dx) to
the forced 4th level of AGC (FM local).

QUICK REFERENCE DATA

ORDERING INFORMATION

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CCA1

analog supply voltage (pin 2) 4.75 5.0 5.25 V

V

CCA2

analog supply voltage (pin 13) 8.1 8.5 8.9 V

V

AMant

AM AGC range see Fig.4 0.3 − 6.0 V

V

FMant

FM AGC range see Fig.5 10 − 600 mV

f

AMant

AM input frequency 0.144 − 22 MHz

f

FMant

FM input frequency 60 − 108 MHz

T

amb

operating ambient temperature −40 − +85 °C

TYPE

NUMBER

PACKAGE

NAME DESCRIPTION VERSION

TEA6810V VSO40 plastic very small outline package; 40 leads SOT158-1
TEA6811V VSO40 plastic very small outline package; 40 leads; face down SOT158-2

1996 Jun 18 3

Philips Semiconductors Product specification

Front-end and PLL synthesizers for

car radios

TEA6810V; TEA6811V

BLOCK DIAGRAM

n

dbook, full pagewidth

MGE727

AM/FM

OSCILLATOR

PIN DIODE

DRIVER

LOCK

DETECTOR

CHARGE

PUMP

PROGRAMME

DIVIDER N1

BAND

GAP

FM

AM RF

AM/FM

AM/FM

AM/FM

TEA6810V
TEA6811V

AM/FM

BUFFER

OSCGND

OSCFDB

OSCTNK IPIDIO FMRFIP

FMRFIN

FMIFON

FMIFOP

AMPREC

AMSB2

AMSB1

AMPREI

FMAGCC

AMAGCC

V

CCOSC

FMAGC

ref

BUFFER

I2C-BUS CONTROLPHASE DETECTOR

N2

AM

36 35 37 38 34 32 30 31 11 12 33 27 28 25 24 26

AMPREO

AMMIN

V

ref

22

18

19

159845201023172761

AGND1

n.c. n.c. n.c. n.c. SCL SDA

DGND

AMMOP

AMMON

AMMGND RFGND

V

CCD

f

refNfrefPVCCA1

V

TUNE

V

CCA2

CHPOUT

LCKDET

AGND2

14

13

3

40

39

16 21 29

Fig.1 Block diagram.

1996 Jun 18 4

Philips Semiconductors Product specification

Front-end and PLL synthesizers for
car radios

TEA6810V; TEA6811V

PINNING

SYMBOL

PIN

(1)

DESCRIPTION

TEA6810 TEA6811

AGND1 1 1 analog ground 1
V

CCA1

2 2 analog supply voltage 1 (+5 V)
LCKDET 3 3 lock detector flag
SDA 4 4 serial data input/output; I

2

C-bus

SCL 5 5 serial clock input; I

2

C-bus

f

refN

6 6 reference frequency input from TEA6821 N-terminal
f

refP

7 7 reference frequency input from TEA6821 P-terminal
DGND 8 8 digital ground
V

CCD

9 9 digital supply voltage (+5 V)
n.c. 10 10 not connected
FMIFON 11 11 FM mixer negative output (72.2 MHz)
FMIFOP 12 12 FM mixer positive output (72.2 MHz)
V

CCA2

13 13 analog supply voltage 2 (+8.5 V)
AGND2 14 14 analog ground 2
AMMOP 15 15 AM mixer positive output (10.7 MHz)
AMMON 16 16 AM mixer negative output (10.7 MHz)
n.c. 17 17 not connected
AMMIN 18 18 AM mixer RF input
V

ref

19 19 reference voltage output from AM band gap
n.c. 20 20 not connected
AMMGND 21 21 AM mixer ground
AMPREO 22 22 AM preamplifier output
n.c. 23 23 not connected
AMSB1 24 24 AM feedback switch SB1
AMSB2 25 25 AM feedback switch SB2
AMPREI 26 26 AM preamplifier input
AMAGCC 27 27 AM AGC capacitor
AMPREC 28 28 AM preamplifier decoupling capacitor
RFGND 29 29 RF ground
FMRFIP 30 30 RF positive input for FM mixer
FMRFIN 31 31 RF negative input for FM mixer
IPIDIO 32 32 pin diode drive
FMAGCC 33 33 FM AGC integrating capacitor
FMAGC

ref

34 34 FM AGC reference voltage
OSCFDB 35 35 oscillator feedback input
OSCGND 36 36 oscillator ground
OSCTNK 37 37 oscillator tank output

1996 Jun 18 5

Philips Semiconductors Product specification

Front-end and PLL synthesizers for
car radios

TEA6810V; TEA6811V

Note

1. Pins 10, 17, 20 and 23 should be connected to a common ground.

V

CCOSC

38 38 oscillator supply voltage (+8.5 V)
V

TUNE

39 39 tuning voltage
CHPOUT 40 40 charge pump output

SYMBOL

PIN

(1)

DESCRIPTION

TEA6810 TEA6811

1996 Jun 18 6

Philips Semiconductors Product specification

Front-end and PLL synthesizers for
car radios

TEA6810V; TEA6811V

Fig.2 Pin configuration (TEA6810).

handbook, halfpage

TEA6810V

MGE725

1
2
3
4
5
6
7
8

9
10
11
12
13
14
15
16
17
18
19
20

40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21

CHPOUT
V

TUNE

V

CCOSC

OSCTNK
OSCGND
OSCFDB

FMAGC

ref

FMAGCC
IPIDIO
FMRFIN
FMRFIP
RFGND
AMPREC
AMAGCC
AMPREI
AMSB2
AMSB1
n.c.
AMPREO
AMMGND

AGND1

V

CCA1

LCKDET

SDA

SCL

f

refN

f

refP

DGND

V

CCD

n.c.
FMIFON
FMIFOP

V

CCA2

AGND2
AMMOP
AMMON

n.c.

AMMIN

V

ref

n.c.

Fig.3 Pin configuration (TEA6811).

handbook, halfpage

TEA6811V

MGE726

1
2
3
4
5
6
7
8

9
10
11
12
13
14
15
16
17
18
19
20

40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21

CHPOUT

V

TUNE

V

CCOSC

OSCTNK

OSCGND

OSCFDB

FMAGC

ref

FMAGCC

IPIDIO
FMRFIN
FMRFIP

RFGND

AMPREC

AMAGCC

AMPREI

AMSB2
AMSB1

n.c.

AMPREO

AMMGND

AGND1
V

CCA1

LCKDET
SDA
SCL
f

refN

f

refP

DGND
V

CCD

n.c.
FMIFON
FMIFOP
V

CCA2

AGND2
AMMOP
AMMON
n.c.
AMMIN
V

ref

n.c.

1996 Jun 18 7

Philips Semiconductors Product specification

Front-end and PLL synthesizers for
car radios

TEA6810V; TEA6811V

I2C-BUS ORGANIZATION

The TEA6810V; TEA6811V is controlled via the I2C-bus which is driven from the TEA6821V. For programming purposes
a module address and four data bytes are required. When used partially, the transmission must be ended by a stop
condition.

Table 1 Bit organization

Table 2 I

2

C-bus address and received bytes

Notes

1. N1 divider ratio is (N + 2); where N is the programmed binary number composed of bytes 1 and 2. For the minimum
ratio; if N < 2048 then N1 divider ratio is {2048 + (N − 2)}.

2. X = don’t care.

START

MODULE

ADDRESS

PROGRAMMABLE

DIVIDER DATA

SWITCH

CONTROL

TEST STOP

S byte 0 A byte 1 A byte 2 A byte 3 A byte 4 A P

BYTES TO

BE

RECEIVED

(4 BYTES)

BUS ADDRESS

MSB LSB

11000100

Byte 1

(1)

program
divider N1
(Low byte)

S7 S6 S5 S4 S3 S2 S1 S0

Byte 2

(1)

program
divider N1
(High byte)

S15 S14 S13 S12 S11 S10 S9 S8

Byte 3
switching

MSB in-lock

counter

LSB in-lock

counter

1 = HIGH

0 = LOW

current

tuning

oscillator

1 = HIGH

0 = LOW

current
charge

pump

1=FM

local

0 = FM dx

MSB

divider

N2

LSB dividerN21=FM

0=AM

Byte 4
testing

1 = 3-state
0 = normal

charge pump

1=f

div

0 = LCKDET

1 = test

0 = normal

in-lock

counter

X

(2)

XX X X

Table 3 N2 divider

N2 DIVIDER MSB LSB

300

501
10 1 0
15 1 1

Table 4 In-lock

IN-LOCK MSB LSB AM/FM

800FM
16 1 0 AM or FM
32 1 1 AM or FM
48 0 0 AM
64 0 1 AM

1996 Jun 18 8

Philips Semiconductors Product specification

Front-end and PLL synthesizers for
car radios

TEA6810V; TEA6811V

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Machine model: equivalent to discharging a 200 pF capacitor through 0 Ω.

HANDLING

Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices.

THERMAL CHARACTERISTICS

DC CHARACTERISTICS

V

13=V38

= 8.5 V; V9=V2= 5.0 V; T

amb

=25°C; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CCA1

analog supply voltage (pin 2) −0.3 12 V

V

CCA2

analog supply voltage (pin 13) −0.3 12 V

V

CCD

digital supply voltage (pin 9) −0.3 12 V

V

CCOSC

oscillator supply voltage (pin 38) −0.3 12 V

P

tot

maximum power dissipation − 0.55 W

T

stg

storage temperature −65 +150 °C

V

es

electrostatic handling note 1 −300 +300 V

SYMBOL PARAMETER VALUE UNIT

R

th j-a

thermal resistance from junction to ambient in free air 90 K/W

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

I

CCA1

analog input current (pin 2) AM mode 7 9 mA

FM mode 6 8 mA

I

CCA2

analog input current (pin 13) AM mode 17 22 mA

FM mode 15 18 mA

I

CCOSC

oscillator input current (pin 38) AM mode 4 6 mA

FM mode 6 8 mA

I

CCD

digital input current (pin 9) AM mode 32 35 mA

FM mode 27 30 mA

I

AMMO

AM mixer output current (pins 15 and 16) AM mode 8.5 − mA

FM mode 0 − mA

I

FMIFO

FM mixer output current (pins 11 and 12) AM mode 0 − mA

FM mode 10 − mA

1996 Jun 18 9

Philips Semiconductors Product specification

Front-end and PLL synthesizers for
car radios

TEA6810V; TEA6811V

AC CHARACTERISTICS

All voltage and current values are RMS values; noise values are unweighted within the bandwidth 0.03 to 20 kHz;
unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

AM signal channel; (note 1; see Fig.4)

RF

PREAMPLIFIER STAGE

Z

21

transimpedance 40 65 − kΩ
AGC STAGE; FI2=1MHZ
V

i2

HF input voltage AGC start level 1 − 750 − mV

AGC start level 2 − 850 − mV
AGC stop level 1 − 145 − mV
AGC stop level 2 − 170 − mV

I

AGCsink

AGC sink current V18=V19+ 0.5 V; V27=V

19

− 1 −µA

I

AGCsource

AGC source current V18=V19- 0.5 V; V27=V

19

− 2 − mA
MIXER (fO= 10.7 MHZ)
R

i

input resistance between pins
18 and 21

15

(2)

20 − kΩ

C

i

input capacitance between
pins 18 and 21

− 5 − pF

C

o

output capacitance between
pins 15 and 16

−− 5

(2)

pF

G

mC

conversion transconductance
(I15to I16/V18to V

19

2.4 2.75 3.1 mS

∆G

mC

variation in conversion
transconductance

−−0.005 − mS/K

IP

3

third-order intermodulation 130

(2)

137 − dBmV

CP −1 dB compression point 114

(2)

120 − dBmV

V

n(eq)

equivalent input noise voltage − 9 − nV/√Hz
OSCILLATOR/N2 DIVIDER
R

N2

internal divider ratio (N2) set by I2C-bus; see Table 3 − 15 −

− 10 −

− 5 −

− 3 −

R

EFERENCE VOLTAGE (PIN 19)

V

o

output reference voltage − 2.75 − V
Z

o

output impedance − 40 −Ω
I

o(max)

maximum output current −− 0.1 mA

1996 Jun 18 10

Philips Semiconductors Product specification

Front-end and PLL synthesizers for
car radios

TEA6810V; TEA6811V

FM signal channel (note 3; see Fig.5)
MIXER

R

i

input resistance between

pins 30 and 31

1.65

(2)

2 − kΩ

C

i

input capacitance between

pins 30 and 31

3.4

(2)

4 4.5

(2)

pF

R

o

output resistance between

pins 11 and 12

10 −−kΩ

C

o

output capacitance between

pins 11 and 12

6.5

(2)

89

(2)

pF

G

m

transconductance I11to I12/V30to V31<V

AGC1

5.5 6.3 6.9 mS

I

11

to I12/V30to V31<V

AGC2

− 4.7 − mS

I

11

to I12/V30to V31<V

AGC3

− 2.3 − mS

I

11

to I12/V30to V31>V

AGC3

− 1.0 − mS

∆G

m

T variation in transconductance

with temperature

<VAGC1 −−0.015 − mS/K

F noise figure

(both sidebands)

f

i

= 72.2 MHz; PLL tuned − 7

(2)

− dB

IP

3

third-order intermodulation 135

(2)

139 − dBmV

CP −1 dB compression point 120

(2)

127 − dBmV

α

IF1

1st IF rejection 25

(2)

30 − dB

V

AGC(S)

AGC start voltage between

pins 30 and 31

start level 1 4.8 6.2 7.8 mV
start level 2 − 15 − mV
start level 3 − 39 − mV

V

AGC(H)

AGC hysteresis voltage hysteresis level 1 − 1 − mV

hysteresis level 2 − 2 − mV
hysteresis level 3 − 3 − mV

R

33

FM AGC output resistance − 5 − kΩ
I

pin

pin diode current V32 = 1.4 V 4 −−mA
V

pin

start level pin diode voltage

between pins 30 and 31

Io=1mA − 57 − mV

OSCILLATOR
f

osc

oscillator frequency 116.8 − 207 MHz
∆f

osc

/∆T oscillator temperature

dependence

−−90 − 10−6/K

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

1996 Jun 18 11

Philips Semiconductors Product specification

Front-end and PLL synthesizers for
car radios

TEA6810V; TEA6811V

SYNTHESIZER (see Fig.6)

Reference frequency input (pins 6 and 7)

V

ref(p-p)

reference frequency input

voltage (V6to V7)

(peak-to-peak value)

− 0.4 − V

t

trans

reference frequency transition

time

−− 50 ns

f

ref

input reference frequency for: tuning step (kHz) N2

FM 50 −−50 − kHz
AM standard SW1 5 10 − 50 − kHz
AM full-band MW (USA) 10 5 − 50 − kHz
FM 25 −−25 − kHz
AM full-band SW1 5 5 − 25 − kHz
AM standard MW/LW 1 15 − 15 − kHz
AM full-band MW/LW 3 5 − 15 − kHz
AM full-band SW2 5 3 − 15 − kHz
FM 10 −−10 − kHz
AM standard SW1 1 10 − 10 − kHz
AM full-band MW/LW 1 5 − 5 − kHz
AM full-band SW1 1 5 − 5 − kHz
AM full-band SW2 1 3 − 5 − kHz

Phase detector/charge pump

I

OL

LOW level output charge

pump current

V40= 4 V 120 175 215 µA

I

OH

HIGH level output charge

pump current

V40= 4 V 0.85 1 1.2 mA

V

OL

LOW level tuning voltage at

charge pump LOW

IO= 0.5I

charge

; V13= 8.5 V 0.2 − 8.25 V

V

OH

HIGH level tuning voltage at

charge pump HIGH

IO= 0.5Icharge; V13 = 8.5 V 0.4 − 8.0 V

I

oz

3-state output current V40=4V −5 − +5 nA
∆f

r(p-p)

residual FM frequency

(peak-to-peak value)

B = 300 Hz to 20 kHz;
I

charge=IOL

; fi= 100 MHz

− 916

(2)

Hz

t

lock

lock time FM = 88 to 108 MHz − 2 − ms

FM = 108 to 88 MHz − 2 − ms
AM = 510 to 1710 kHz − 2 − ms
AM = 1710 to 510 kHz − 2 − ms

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

1996 Jun 18 12

Philips Semiconductors Product specification

Front-end and PLL synthesizers for
car radios

TEA6810V; TEA6811V

Notes

1. fi1= 1053 kHz; f

mod

= 400 Hz; m = 0.3; Vi1=Vi2= 1 mV; N2 divider switched to divide-by-15.

2. Not measured 100% in production.

3. Vi1= 1 mV; fi1= 98 MHz; f

mod

= 1 kHz; ∆f=±22.5 kHz.

Programmable divider

N

min

minimum programmable ratio − 2050 −
N

max

maximum programmable ratio − 65537 −
DR divider ratio for: tuning step (kHz) N2

FM 50 − 2050 − 3604
FM 25 − 6388 − 7208
FM 10 − 15970 − 18020
FM 5 − 31940 − 36040
AM standard MW/LW 1 15 10844 − 12420
AM standard SW1 5 10 3320 − 4140
AM standard SW1 1 10 16600 − 20700
AM full-band MW/LW 3 5 10448 − 10973
AM full-band MW/LW 1 5 31344 − 32920
AM full-band SW1 5 5 6700 − 8240
AM full-band SW1 1 5 33500 − 41200
AM full-band SW2 5 3 8240 − 10640
AM full-band SW2 1 3 41200 − 53200
AM full-band MW (USA) 10 5 3172 − 3292

In-lock detector (reset by any start condition on I2C-bus)

V

OH

in-lock HIGH level output

voltage (pin 3)

4.0 − 5.0 V

V

OL

in-lock LOW level output

voltage (pin 3)

0 − 0.4 V

t

d

in-lock delay counter length = N − N ×1⁄

fref

− ms

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

1996 Jun 18 13

Philips Semiconductors Product specification

Front-end and PLL synthesizers for
car radios

TEA6810V; TEA6811V

Fig.4 AM test circuit.

handbook, full pagewidth

MLB828

AM
RF

AGC

AM

10 kΩ

20 kΩ50 Ω

50

Ω

20
kΩ

10 kΩ

26

24

22

18 19

25

28

27

35

37

36

38

29

4.7 nF

1.8 pF

2.7 pF

33 µF

1.5 µF

21

16

15

13

12

9845

V

i1

50 Ω

50

Ω

V

i2

V

ref

V

o1

V

o2

V

TUNE

8.5 V

V

CCOSC

8.5 V

V

CCA2

5 V

V

CCD

AM/FM

OSCILLATOR

50
nH

BB515

1 nF

10
kΩ

N2

BAND

GAP

AM/FM

AM/

FM

AM/

FM

10 nF

1 mH

33 µH

200

Ω

100nF33

µF

I C BUS

CONTROL

2

10 kΩ

10 kΩ

100 nF

SDA SCL

TEA6810V
TEA6811V

22
nF

1:1

33 µF

1996 Jun 18 14

Philips Semiconductors Product specification

Front-end and PLL synthesizers for
car radios

TEA6810V; TEA6811V

Fig.5 FM test circuit.

handbook, full pagewidth

MLB829

FM

AGC

PIN
DIODE
DRIVE

BUFFER

31

33

30

34
32

35

37

36

38

29

1.6 pF

2.7 pF

11

12

13

14

50 Ω

50

Ω

V

i1

75

Ω

V

o3

V

o2

V

o1

V

TUNE

8.5 V

V

CCOSC

8.5 V

V

CCA2

AM/FM

OSCILLATOR

50
nH

BB515

1 nF

10
kΩ

1 Ω

1 mH

1 kΩ

100nF33

µF

9845

5 V

V

CCD

AM/FM

I C BUS

CONTROL

2

10 kΩ

10 kΩ

100 nF

100 nF

SDA SCL

TEA6810V
TEA6811V

56
pF

50 Ω

f

i1

1996 Jun 18 15

Philips Semiconductors Product specification

Front-end and PLL synthesizers for
car radios

TEA6810V; TEA6811V

Fig.6 Synthesizer test circuit.

handbook, full pagewidth

MLB830

CHARGE

PUMP

40

39

13

2

1

14

5 V

V

CCA1

0.4 V (p p)

35

37

36

38

1.8 pF

2.7 pF

V

o1

V

iref

V

8.5 V

CCOSC

AM/FM

OSCILLATOR

50
nH

BB515

1 nF

12
nF

120 nF

3.3
nF

2.2
kΩ

3.6
kΩ

10
kΩ

1 Ω

8 pF

9845

3

5 V

V

CCD

I C BUS

CONTROL

2

PHASE

DETECTOR

PROGRAM

DIVIDER

N1

BUFFER

LOCK

DETECTOR

10 kΩ

10 kΩ

1.2 kΩ

1.2 kΩ

100 nF

SDA SCL

TEA6810V
TEA6811V

1996 Jun 18 16

Philips Semiconductors Product specification

Front-end and PLL synthesizers for
car radios

TEA6810V; TEA6811V

INTERNAL PIN CONFIGURATION

Fig.7 Internal pin configuration.

handbook, full pagewidth

MGE728

1

2

3

4

5
6

7
8

9

10
11

12

13
14

15
16

17

18

19

20

40

39

38
37
36

35

34

33

32

31

30
29

28

27

26
25
24
23
22

21

CHPOUT

V

TUNE

V

CCOSC

OSCTNK
OSCGND

OSCFDB

FMAGC

ref

FMAGCC

IPIDIO

FMRFIN

FMRFIP
RFGND

AMPREC

AMAGCC

AMPREI
AMSB2
AMSB1
n.c.
AMPREO

AMMGND

AGND1

V

CCA1

LCKDET

SDA

SCL

f

refN

f

refP

DGND

V

CCD

n.c.

FMIFON

FMIFOP

V

CCA2

AGND2

AMMOP
AMMON

n.c.

AMMIN

V

ref

n.c.

TEA6810V
TEA6811V

1996 Jun 18 17

Philips Semiconductors Product specification

Front-end and PLL synthesizers for

car radios

TEA6810V; TEA6811V

APPLICATION INFORMATION

d

book, full pagewidth

MGE729

10 kΩ

1 kΩ
1 kΩ

10 kΩ

50 kΩ

50 Ω

5 kΩ

20 kΩ

2.2 µF

10 µF

47 µF

TEA6810V
TEA6811V

HEF4060B

1

2

3

4

5

6

7

8

9

100 nF

100 nF

10 nF

1 mH

10

11

12

13

14

15

16

9

10

6.4

MHz

50

kHz

11

12

13

14

15

16

V

SS

V

CCA1VCCD

V

TUNE

FMAGC

ref

FMAGCC

IPIDIO

FMIN

AMAGCC
AMPREI

AMSB2

AMSB1

AMPREO

OSCTNK

DGND

1 mH

3.3 nF

120 nF

1 mH

V

CCA2

O3

O6

O4

O5

TR4

TR3

TR2
TR1

FMOUT

AMOUT

AMMIN

ANZAC
TP103

ANZAC

TP103

ANZAC

TP101

4.7
nF

4.7
nF

4.7
nF

4.7
nF

220 nF

O13

O12

O11

8

7

6

5

4

3

2

1

CTC

LCKDET

SDA

SCL

RTC

RS

MR

O8

O7

O9

V

DD

17

18

19

20

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

24

23

22

21

1 kΩ

1 kΩ

1 kΩ

1 kΩ

22 kΩ

1 kΩ

1 kΩ

1 kΩ

10 kΩ

100 Ω

100 Ω

100 Ω

50 Ω

100 Ω

10 kΩ

10 kΩ

3.6 kΩ

2.2 kΩ

12 nF

100 nF

1 nF

1.8 pF

1 pF

2.7 pF

120 nF

120 nF

1 nF

1 nF

50 nH

47 kΩ

470 kΩ

100 kΩ

100 Ω

47 µF

47 µF

47
µF

47
µF

47
µF

47 pF

12 pF

12.5 kHz

150 nF

Fig.8 Test board diagram.

1996 Jun 18 18

Philips Semiconductors Product specification

Front-end and PLL synthesizers for
car radios

TEA6810V; TEA6811V

PACKAGE OUTLINES

UNIT A1A2A3b

p

cD

(1)E(2)

Z

(1)

eHELLpQywv θ

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

inches

0.3

0.1

2.45

2.25

0.25

0.42

0.30

0.22

0.14

15.6

15.2

7.6

7.5

0.762 2.25

12.3

11.8

1.15

1.05

0.6

0.3

7
0

o
o

0.1 0.1

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Notes

1. Plastic or metal protrusions of 0.4 mm maximum per side are not included.

2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.

1.7

1.5

SOT158-1

92-11-17
95-01-24

X

w M

θ

A

A

1

A

2

b

p

D

H

E

L

p

Q

detail X

E

Z

e

c

L

v M

A

(A )

3

A

y

40

20

21

1

pin 1 index

0.012

0.004

0.096

0.089

0.017

0.012

0.0087

0.0055

0.61

0.60

0.30

0.29

0.03 0.089

0.48

0.46

0.045

0.041

0.024

0.012

0.004

0.2

0.008 0.004

0.067

0.059

0.010

0 5 10 mm

scale

VSO40: plastic very small outline package; 40 leads

SOT158-1

A

max.

2.70

0.11

1996 Jun 18 19

Philips Semiconductors Product specification

Front-end and PLL synthesizers for
car radios

TEA6810V; TEA6811V

UNIT A1A2A

3

b

p

cD

(1)E(2)

eHELLpQywv θ

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

inches

0.3

0.1

2.45

2.25

0.25

0.42

0.30

0.22

0.14

15.6

15.2

7.6

7.5

0.762

12.3

11.8

1.15

1.05

0.6

0.3

7
0

o
o

0.1 0.1

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Note

1. Plastic or metal protrusions of 0.4 mm maximum per side are not included.

2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.

1.7

1.5

SOT158-2

X

w M

θ

A

A

1

A

2

b

p

D

H

E

L

p

Q

detail X

E

Z

e

c

L

v M

A

(A )

3

A

y

40 21

201

pin 1 index

0.012

0.004

0.096

0.089

0.017

0.012

0.0087

0.0055

0.61

0.60

0.30

0.29

0.03

2.25

0.089

0.48

0.46

0.045

0.041

0.024

0.012

0.004

0.2

0.008 0.004

0.067

0.059

0.010

Z

(1)

0 5 10 mm

scale

92-11-17
95-01-24

VSO40: plastic very small outline package; 40 leads; face down

SOT158-2

A

max.

2.70

0.11

1996 Jun 18 20

Philips Semiconductors Product specification

Front-end and PLL synthesizers for
car radios

TEA6810V; TEA6811V

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

(order code 9398 652 90011).

Reflow soldering

Reflow soldering techniques are suitable for all VSO
packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

Wave soldering

Wave soldering techniques can be used for all VSO
packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be
parallel to the solder flow.

• The package footprint must incorporate solder thieves at
the downstream end.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

1996 Jun 18 21

Philips Semiconductors Product specification

Front-end and PLL synthesizers for
car radios

TEA6810V; TEA6811V

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

PURCHASE OF PHILIPS I

2

C COMPONENTS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Purchase of Philips I

2

C components conveys a license under the Philips’ I2C patent to use the
components in the I2C system provided the system conforms to the I2C specification defined by
Philips. This specification can be ordered using the code 9398 393 40011.

1996 Jun 18 22

Philips Semiconductors Product specification

Front-end and PLL synthesizers for
car radios

TEA6810V; TEA6811V

NOTES

1996 Jun 18 23

Philips Semiconductors Product specification

Front-end and PLL synthesizers for
car radios

TEA6810V; TEA6811V

NOTES

Internet: http://www.semiconductors.philips.com/ps/

(1) ADDRESS CONTENT SOURCE April 6, 1998

Philips Semiconductors – a worldwide company

© Philips Electronics N.V. 1996 SCA49
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

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Philippines: Philips Semiconductors Philippines Inc.,
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Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
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Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

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Slovenia: see Italy
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United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
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United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone], Fax. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
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China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
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Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]
Greece: No. 15, 25th March Street, GR 17778 TAVROS,

Tel. [phone], Fax. [phone]

Hungary: see Austria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.

Worli, MUMBAI 400 018, Tel. [phone], Fax. [phone]

Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. [phone], Fax. [phone]
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180,

Tel. [phone], Fax. [phone]
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. [phone], Fax. [phone]
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. [phone], Fax. [phone]
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Tel. [phone], Fax. [phone]
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Tel. [phone], Fax. [phone]
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. [phone], Fax. [phone]
Middle East: see Italy

Printed in The Netherlands 517021/02/pp24 Date of release: 1996 Jun 18 Document order number: 9397 750 00916