Page 1
DATA SH EET
Product specification
File under Integrated Circuits, IC01
October 1990
INTEGRATED CIRCUITS
TEA5551T
1-chip AM radio
Page 2
October 1990 2
Philips Semiconductors Product specification
1-chip AM radio TEA5551T
GENERAL DESCRIPTION
The TEA5551T is a 1-chip monolithic integrated radio circuit which is designed for use as a pocket receiver with
headphones in a supply voltage range (VS) of 1.8 V to 4.5 V.
The circuit consists of a complete AM part and dual AF amplifier with low quiescent current. The AF part has low radiation
(HF noise) and good overdrive performance. The dual AF amplifier makes the device suitable for operation in an AM/FM
stereo receiver with or without stereo cassette player. The IC has a 1-pin switch for AM or other applications.
Features
• Low voltage operation (V
S
= 1.8 V to 4.5 V)
• Low current consumption (I
tot
= 5 mA at VS = 3 V)
• All pins provided with ESD protection
AM part
• High sensitivity (Vi = 1.5 µV for Vo = 10 mV)
• Good IF suppression
• Good signal handling (V
i(max)
= 80 mV)
• Switch for AM or other applications
• Short waveband (> 40 MHz)
AF part
• A fixed integrated gain of 32 dB
• Few external components required
• Very low quiescent current
• Low HF radiation and good AF overdrive performance
• 0 to 20 kHz limited frequency response
• 25 mW per channel output power in 32 Ω
Page 3
October 1990 3
Philips Semiconductors Product specification
1-chip AM radio TEA5551T
QUICK REFERENCE DATA (at T
amb
= 25 °C)
PACKAGE OUTLINE
16-lead mini-pack; plastic (SO16; SOT109A); SOT109-1; 1996 July 25.
PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
Supply voltage V
S
1.8 3.0 4.5 V
Supply current I
5
+ I
10
− 6 − mA
AM part
m = 0.3
RF sensitivity
RF input voltage
V
o(AF)
= 10 mV V
i(RF)
− 1.5 −µV
S/N = 26 dB V
i(RF)
− 15 −µV
S/N = 50 dB V
i(RF)
− 10 − mV
AF output voltage V
i(RF)
= 1 mV V
o(AF)
− 80 − mV
Total harmonic distortion V
i(RF)
= 100 µV to 30 mV THD − 0.8 − %
Signal handling capability m = 0.8; THD = 10% V
i(RF)
− 80 − mV
AF part
both channels driven
Output power R
L
= 32 Ω; THD = 10%
at V
S
= 3.0 V P
o
− 25 − mW
at V
S
= 4.5 V P
o
− 60 − mW
Voltage gain P
o
= 10 mW G
v
− 32 − dB
Channel separation 1 kHz α−50 − dB
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October 1990 4
Philips Semiconductors Product specification
1-chip AM radio TEA5551T
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Fig.1 Block diagram.
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October 1990 5
Philips Semiconductors Product specification
1-chip AM radio TEA5551T
PINNING
1 AM GND 9 AF output amplifier 2
2 AM mixer output 10 AF supply voltage (V
S
)
3 AM AGC 11 AF + input amplifier 2
4 AM-IF input 12 AF − input amplifier 1
5 AM supply voltage (V
P
) 13 AM detector output
6 AF + input amplifier 1 14 AM oscillator
7 AF GND 15 AM−RF input
8 AF output amplifier 1 16 AM−RF input
Fig.2 All pins provided with ESD protection diodes to substrate.
Page 6
October 1990 6
Philips Semiconductors Product specification
1-chip AM radio TEA5551T
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
QUALITY
In accordance with UZW-BO/FQ-0601.
Operating life endurance verified 2000 hours at T
j
= 85 °C.
The product meets the 600 V ESD on all pins (HBM specification UZW-BO/FQ-A302).
THERMAL RESISTANCE
PARAMETER CONDITIONS SYMBOL MIN. MAX. UNIT
Supply voltage V
S
− 6V
Supply current (peak) I
M
− 150 mA
Crystal temperature T
c
− 150 °C
Short-circuit protection V
S
= 4.5 V t
sc
− 5s
Total power dissipation P
tot
see Fig.3
Storage temperature range T
stg
−65 +150 °C
Operating ambient temperature range T
amb
−25 +60 °C
From junction to ambient R
th j-a
= 110 K/W
Fig.3 Power derating curve.
Page 7
October 1990 7
Philips Semiconductors Product specification
1-chip AM radio TEA5551T
DC CHARACTERISTICS
All voltages are referenced to pin 1 and pin 7; all input currents are positive; all parameters are measured in test circuit
of Fig.6 at V
S
= 3 V; T
amb
= 25 °C unless otherwise specified
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Supply voltage V
S
1.8 3.0 4.5 V
Voltages
pin 5 V
5
1.6 2.8 4.3 V
pin 10 V
10
1.8 3.0 4.5 V
HF part
Total current consumption (pin 5) I
5
− 2.2 − mA
Oscillator current (pin 14) I
14
− 100 −µA
Mixer current (pin 2) I
2
− 200 −µA
Voltages
pin 3 V
3
− 150 − mV
pin 13 V
13
− 600 − mV
pin 15 V
15
− 1.1 − V
pin 16 V
16
− 1.1 − V
AF part
Total current consumption (pin 10) I
5
− 4.0 − mA
Input bias current
(pin 11 connected to pin 16) I
11
+ I
16
− 40 − nA
DC output voltage
pin 8 V
8
- 1.5 − V
pin 9 V
9
− 1.5 − V
Page 8
October 1990 8
Philips Semiconductors Product specification
1-chip AM radio TEA5551T
AC CHARACTERISTICS
All parameters are measured in test circuit of Fig.6 at V
S
= 3 V; T
amb
= 25 °C unless otherwise specified.
RF conditions: Input frequency 1 MHz; 30% modulation where f
mod
= 1 kHz; unless otherwise specified.
Note to the AC characteristics
1.
* Value to be fixed.
PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
RF sensitivity
RF input voltage V
o(AF)
= 10 mV V
i(RF)
− 1.5 −µV
Loss in sensitivity V
o(AF)
= 10 mV;
V
S
= 1.8 V ∆V
i(RF)
− 6 − dB
Noise
Signal-to-noise ratio for RF
input signal voltage of
V
i(RF)
= 2 µV S/N − 6 − dB
V
i(RF)
= 15 µV S/N − 26 − dB
V
i(RF)
= 1 mV S/N − 46 − dB
AF output voltage
V
i(RF)
= 1 mV V
o(AF)
− 80 − mV
V
i(RF)
= 1 mV;
V
S
= 1.8 V V
o(AF)
− 55 − mV
Total harmonic distortion
V
i(RF)
= 100 µV
to 30 mV THD − 0.8 − %
V
i(RF)
= 80 mV;
m = 0.8 THD − 10 − %
AGC range
Change in RF input voltage
for 10 dB change in AF
output voltage V
i(RF1)
= 50 mV V
i(RF1)
/
V
i(RF2)
− 86 − dB
Optimum source impedance
Z
source
− 3 − kΩ
IF suppression
at V
o(AF)
= 10 mV note 1 α−20 − dB
Oscillator (pin 14) f
osc
= 1468 kHz
Oscillator voltage V
i
− 100 − mV
V
5
= 1.5 V V
i
− * − mV
α
V
i
at fi468 kHz=
V
i
at fi1MHz=
----------------------------------------------
=
Page 9
October 1990 9
Philips Semiconductors Product specification
1-chip AM radio TEA5551T
AC CHARACTERISTICS
All parameters are measured in test circuit of Fig.6 at V
S
= 3 V; T
amb
= 25 °C unless otherwise specified. RF conditions:
f = 1 kHz; R
L
= 32 Ω; unless otherwise specified.
PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
Output power
THD = 10% P
o
− 25 − mW
THD = 10%; V
S
= 1.8 V P
o
− 8 − mW
THD = 10%; V
S
= 4.5 V P
o
− 60 − mW
Total harmonic distortion
P
o
= 10 mW THD − 0.5 − %
Voltage gain
P
o
= 10 mW G
v
− 32 − dB
Noise
Noise output voltage R
S
= 5 kΩ; B = 15 kHz V
no
− 240 −µV
HF noise output voltage R
S
= 5 kΩ; B = 5 kHz;
f = 500 kHz V
no(RF)
− 20 −µV
Input circuit
Input impedance pin 11 connected to pin 12 Z
i
− 3 − MΩ
Mute switch
AC impedance
(pin 13 to ground) V
5
= 0 V; I13 = 0.32 mA R
S
− 200 −Ω
Page 10
October 1990 10
Philips Semiconductors Product specification
1-chip AM radio TEA5551T
Fig.4 Typical signal (S) and noise (N) output voltages, where Vo is the AF output voltage at pin 13, as a function
of the input voltage Vi. Vi is the input voltage at pin 16. Also shown is the total harmonic distortion (THD).
Conditions: fo = 1 MHz; fm = 1 kHz; VS = 3 V; Rg = 50 Ω; m = 0.3 (unless otherwise specified).
Fig.5 Total distortion (d
tot
) as a function of output power (Po).
Conditions: VS = 3 V and 4.5 V; RL = 32 Ω; f = 1 kHz.
Page 11
October 1990 11
Philips Semiconductors Product specification
1-chip AM radio TEA5551T
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Fig.6 Test circuit.
Coil data: L1 7MCS2199
L2 7MCS2197
L3 7BRS10869X
Page 12
October 1990 12
Philips Semiconductors Product specification
1-chip AM radio TEA5551T
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APPLICATION INFORMATION
Fig.7 Application circuit.
Coil data: L1 7MCS2199
L2 7MCS2197
L3 7BRS10869X
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October 1990 13
Philips Semiconductors Product specification
1-chip AM radio TEA5551T
COIL DATA
AM coils (Figs 6 and 7)
Fig.8 IF bandpass filter (L1). TOKO sample no. 7MCS2199.
Fig.9 IF bandpass filter (L2). TOKO sample no. 7MCS2197.
Page 14
October 1990 14
Philips Semiconductors Product specification
1-chip AM radio TEA5551T
Fig.10 Oscillator coil (L3). TOKO sample no. 7BRS10869X.
Page 15
October 1990 15
Philips Semiconductors Product specification
1-chip AM radio TEA5551T
PACKAGE OUTLINE
X
w M
θ
A
A
1
A
2
b
p
D
H
E
L
p
Q
detail X
E
Z
e
c
L
v M
A
(A )
3
A
8
9
1
16
y
pin 1 index
UNIT
A
max.
A1A2A
3
b
p
cD
(1)E(1) (1)
eHELLpQZywv θ
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
mm
inches
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
10.0
9.8
4.0
3.8
1.27
6.2
5.8
0.7
0.6
0.7
0.3
8
0
o
o
0.25 0.1
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
1.0
0.4
SOT109-1
95-01-23
97-05-22
076E07S MS-012AC
0.069
0.010
0.004
0.057
0.049
0.01
0.019
0.014
0.0100
0.0075
0.39
0.38
0.16
0.15
0.050
1.05
0.041
0.244
0.228
0.028
0.020
0.028
0.012
0.01
0.25
0.01 0.004
0.039
0.016
0 2.5 5 mm
scale
SO16: plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
Page 16
October 1990 16
Philips Semiconductors Product specification
1-chip AM radio TEA5551T
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
“IC Package Databook”
(order code 9398 652 90011).
Reflow soldering
Reflow soldering techniques are suitable for all SO
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
Wave soldering
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Page 17
October 1990 17
Philips Semiconductors Product specification
1-chip AM radio TEA5551T
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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