Datasheet TEA6320T, TEA6320 Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TEA6320

Sound fader control circuit

Preliminary specification
Supersedes data of September 1992
File under Integrated Circuits, IC01

1995 Dec 19

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

FEATURES

• Source selector for four stereo and one mono inputs

• Interface for noise reduction circuits

• Interface for external equalizer

• Volume, balance and fader control

• Special loudness characteristic automatically controlled

in combination with volume setting

• Bass and treble control

• Mute control at audio signal zero crossing

• Fast mute control via I2C-bus

• Fast mute control via pin

• I2C-bus control for all functions

• Power supply with internal power-on reset.

GENERAL DESCRIPTION

The sound fader control circuit TEA6320 is an I2C-bus
controlled stereo preamplifier for car radio hi-fi sound
applications.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CC

I

CC

V

o(rms)

G

v

G

step(vol)

G

bass

G

treble

G

step(treble)

(S+N)/N signal-plus-noise to noise ratio V

supply voltage 7.5 8.5 9.5 V
supply current VCC= 8.5 V − 26 − mA
maximum output voltage level VCC= 8.5 V; THD ≤ 0.1% − 2000 − mV
voltage gain −86 − +20 dB
step resolution (volume) − 1 − dB
bass control −15 − +15 dB
treble control −12 − +12 dB
step resolution (bass, treble) − 1.5 − dB

= 2.0 V; Gv= 0 dB;

O

− 105 − dB

unweighted

RR

100

ripple rejection V

< 200 mV; f = 100 Hz;

r(rms)

− 76 − dB

Gv=0dB

α

cs

channel separation 250 Hz ≤ f ≤ 10 kHz; Gv= 0 dB 90 96 − dB

ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

PACKAGE

TEA6320 SDIP32 plastic shrink dual in-line package; 32 leads (400 mil) SOT232-1
TEA6320T SO32 plastic small outline package; 32 leads; body width 7.5 mm SOT287-1

1995 Dec 19 2

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

BLOCK DIAGRAM

output

MUTE

output

left

SCL

SDA

right

2.2 kΩ

m

C

33 nF

8.2 nF

5.6 nF 10 nF

150 nF

20 kΩ

220 nF

KVL

C

3

VOLUME II

0 to −55 dB

MUTE

FUNCTION

512

6
7

9

10 8

BALANCE

FADER REAR

DETECTOR

ZERO CROSS

LEFT

TREBLE

LEFT

BASS

VOLUME I

+20 to −31 dB

4

BALANCE

VOLUME II

0 to −55 dB

FADER FRONT

±12 dB

±15 dB

LEFT

LOUDNESS

32

C-BUS

2

I

1

RECEIVER

LOGIC

29

VOLUME II

0 to −55 dB

SOURCE

SELECTOR

BALANCE

FADER FRONT

RIGHT

±12 dB

TREBLE

BASS

RIGHT

±15 dB

RIGHT

VOLUME I

LOUDNESS

+20 to −31 dB

30

BALANCE

VOLUME II

0 to −55 dB

FADER REAR

TEA6320

MED421

150 nF

220 nF

KVL

C

5.6 nF

33 nF

20 kΩ

8.2 nF

handbook, full pagewidth

2.2 kΩ

Fig.1 Block diagram.

28

26 27

24

23 25

POWER

SUPPLY

21

ref

V

100 µF

2

31

CC

V

GND

19

16

15

13

47 µF

9 x 220 nF

input

left

1995 Dec 19 3

source

11

14

22

20

18

17

KIN

C

input

right

input

mono

source

source

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

PINNING

SYMBOL PIN DESCRIPTION

SDA 1 serial data input/output
GND 2 ground
OUTLR 3 output left rear
OUTLF 4 output left front
TL 5 treble control capacitor left channel or

input from an external equalizer

B2L 6 bass control capacitor left channel or

output to an external equalizer
B1L 7 bass control capacitor, left channel
IVL 8 input volume I, left control part
ILL 9 input loudness, left control part
QSL 10 output source selector, left channel
IDL 11 input D left source
MUTE 12 mute control
ICL 13 input C left source
IMO 14 input mono source
IBL 15 input B left source
IAL 16 input A left source
IAR 17 input A right source
IBR 18 input B right source
CAP 19 electronic filtering for supply
ICR 20 input C right source
V

ref

21 reference voltage (0.5VCC)
IDR 22 input D right source
QSR 23 output source selector right channel
ILR 24 input loudness right channel
IVR 25 input volume I, right control part
B1R 26 bass control capacitor right channel
B2R 27 bass control capacitor right channel or

output to an external equalizer

TR 28 treble control capacitor right channel

or input from an external equalizer
OUTRF 29 output right front
OUTRR 30 output right rear
V

CC

31 supply voltage

SCL 32 serial clock input

handbook, halfpage

1

SDA

2

GND

OUTLF

TL
B2L
B1L

IVL

ILL

QSL

IDL

MUTE

ICL

IMO

IBL
IAL

3
4
5
6
7
8

9
10
11
12
13
14
15
16

TEA6320

MED422

OUTLR

Fig.2 Pin configuration.

32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17

SCL
V

CC

OUTRR
OUTRF
TR
B2R
B1R
IVR
ILR
QSR
IDR

V

ref

ICR
CAP
IBR
IAR

1995 Dec 19 4

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

FUNCTIONAL DESCRIPTION

The source selector selects one of 4 stereo inputs or the
mono input. The maximum input signal voltage is
V

= 2 V. The outputs of the source selector and the

i(rms)

inputs of the following volume control parts are available at
pins 8 and 10 for the left channel and pins 23 and 25 for
the right channel. This offers the possibility of interfacing a
noise reduction system.

The volume control function is split into two sections:
volume I control block and volume II control block.

The control range of volume I is between +20 dB and

−31 dB in steps of 1 dB. The volume II control range is
between 0 dB and −55 dB in steps of 1 dB. Although the
theoretical possible control range is 106 dB
(+20 to −86 dB), in practice a range of 86 dB (+20 to

−66 dB) is recommended. The gain/attenuation setting of
the volume I control block is common for both channels.

The volume I control block operates in combination with
the loudness control. The filter is linear when the maximum
gain for the volume I control (+20 dB) is selected. The filter
characteristic increases automatically over a range of
32 dB down to a setting of −12 dB. That means the
maximum filter characteristic is obtained at −12 dB setting
of volume I. Further reduction of the volume does not
further influence the filter characteristic (see Fig.5). The
maximum selected filter characteristic is determined by
external components. The proposed application gives a
maximum boost of 17 dB for bass and 4.5 dB for treble.
The loudness may be switched on or off via I2C-bus control
(see Table 7).

The volume I control block is followed by the bass control
block. A single external capacitor of 33 nF for each
channel in combination with internal resistors, provides the
frequency response of the bass control (see Fig.3). The
adjustable range is between −15 and +15 dB at 40 Hz.

Both loudness and bass control result in a maximum bass
boost of 32 dB for low volume settings.

The treble control block offers a control range between

−12 and +12 dB in steps of 1.5 dB at 15 kHz. The filter
characteristic is determined by a single capacitor of 5.6 nF
for each channel in combination with internal resistors
(see Fig.4).

The basic step width of bass and treble control is 3 dB. The
intermediate steps are obtained by switching 1.5 dB boost
and 1.5 dB attenuation steps.

The bass and treble control functions can be switched off
via I2C-bus. In this event the internal signal flow is
disconnected. The connections B2L and B2R are outputs

and TL and TR are inputs for inserting an external
equalizer.

The last section of the circuit is the volume II block. The
balance and fader functions are performed using the same
control blocks. This is realized by 4 independently
controllable attenuators, one for each output. The control
range of these attenuators is 55 dB in steps of 1 dB with an
additional mute step.

The circuit provides 3 mute modes:

1. Zero crossing mode mute via I
2 independent zero crossing detectors (ZCM,
see Tables 2 and 9 and Fig.16).

2. Fast mute via MUTE pin (see Fig.10).

3. Fast mute via I2C-bus either by general mute (GMU,
see Tables 2 and 9) or volume II block setting
(see Table 4).

The mute function is performed immediately if ZCM is
cleared (ZCM = 0). If the bit is set (ZCM = 1) the mute is
activated after changing the GMU bit. The actual mute
switching is delayed until the next zero crossing of the
audio frequency signal. As the two audio channels (left and
right) are independent, two comparators are built-in to
control independent mute switches.

To avoid a large delay of mute switching when very low
frequencies are processed, the maximum delay time is
limited to typically 100 ms by an integrated timing circuit
and an external capacitor (Cm= 10 nF, see Fig.10). This
timing circuit is triggered by reception of a new data word
for the switch function which includes the GMU bit. After a
discharge and charge period of an external capacitor the
muting switch follows the GMU bit if no zero crossing was
detected during that time.

The mute function can also be controlled externally. If the
mute pin is switched to ground all outputs are muted
immediately (hardware mute). This mute request
overwrites all mute controls via the I2C-bus for the time the
pin is held LOW. The hardware mute position is not stored
in the TEA6320.

For the turn on/off behaviour the following explanation is
generally valid. To avoid AF output caused by the input
signal coming from preceding stages, which produces
output during drop of VCC, the mute has to be set, before
the VCC will drop. This can be achieved by I2C-bus control
or by grounding the MUTE pin.

For use where is no mute in the application before turn off,
a supply voltage drop of more than 1 × VBE will result in a
mute during the voltage drop.

2

C-bus using

1995 Dec 19 5

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

The power supply should include a VCC buffer capacitor,
which provides a discharging time constant. If the input
signal does not disappear after turn off the input will
become audible after certain time. A 4.7 kΩ resistor
discharges the VCC buffer capacitor, because the internal

The hardware mute function is favourable for use in Radio
Data System (RDS) applications. The zero crossing mute
avoids modulation plops. This feature is an advantage for
mute during changing presets and/or sources (e.g. traffic
announcement during cassette playback).

current of the IC does not discharge it completely.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CC

V

n

supply voltage 0 10 V
voltage at all pins except pin 2

0VCCV

referenced to GND (pin 2)

T

amb

T

stg

V

es

operating ambient temperature −40 +85 °C
storage temperature −65 +150 °C
electrostatic handling note 1

Note

1. Human body model: C = 100 pF; R = 1.5 kΩ; V ≥ 2 kV. Charge device model: C = 200 pF; R = 0 Ω; V ≥ 500 V.

1995 Dec 19 6

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

CHARACTERISTICS

VCC= 8.5 V; RS= 600 Ω; RL=10kΩ; CL= 2.5 nF; AC coupled; f = 1 kHz; T
linear; treble linear; fader off; balance in mid position; loudness off; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CC

I

CC

V

DC

supply voltage 7.5 8.5 9.5 V
supply current − 26 33 mA
internal DC voltage at inputs and

outputs

V

ref

G
V

o(rms)

v(max)

internal reference voltage at pin 21 − 4.25 − V
maximum voltage gain RS=0Ω; RL= ∞ 19 20 21 dB
output voltage level for

P

at the power output stage THD ≤ 0.5%; see Fig.11 − 2000 − mV

max

start of clipping THD = 1% 2300 −−mV

R

=2kΩ; CL= 10 nF;

L

THD=1%
V
f

ro

i(rms)

input sensitivity Vo= 2000 mV; Gv=20dB − 200 − mV
roll-off frequency C

= 220 nF;

KIN

C

= 220 nF; Zi=Z

KVL

low frequency (−1 dB) 60 −−Hz
low frequency (−3 dB) 30 −−Hz
high frequency (−1 dB) 20000 −−Hz

C

= 470 nF;

KIN

C

= 100 nF; Zi=Z

KVL

low frequency (−3 dB)

α

cs

channel separation Vi= 2 V; frequency range

250 Hz to 10 kHz
THD total harmonic distortion frequency range

20 Hz to 12.5 kHz

V

= 100 mV; Gv=20dB − 0.1 − %

i

= 1 V; Gv=0dB − 0.05 0.15 %

V

i

V

= 2 V; Gv=0dB − 0.1 − %

i

V

= 2 V; Gv= −10 dB − 0.1 − %

i

RR ripple rejection V

r(rms)

< 200 mV
f = 100 Hz 70 76 − dB
f = 40 Hz to 12.5 kHz − 66 − dB

(S+N)/N signal-plus-noise to noise ratio unweighted;

20 Hz to 20 kHz (RMS);
V

= 2.0 V; see Figs 6 and 7

o

CCIR468-2 weighted; quasi
peak; V

= 2.0 V

o

=0dB − 95 − dB

G

v

=12dB − 88 − dB

G

v

G

=20dB − 81 − dB

v

=25°C; gain control Gv= 0 dB; bass

amb

3.83 4.25 4.68 V

2000 −−mV

i(min)

17 −−Hz

i(typ)

90 96 − dB

− 105 − dB

1995 Dec 19 7

Philips Semiconductors Preliminary specification



Sound fader control circuit TEA6320

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

P

no(rms)

α

ct

Source selector

Z

i

α

S

V

i(rms)

V

offset

Z

o

R

L

C

L

G

v

Control part (source selector disconnected; source resistance 600 Ω)

Z

i

Z

o

R

L

C

L

R

DCL

V

i(rms)

V

no

CR

tot

G

step

noise output power (RMS value)

mute position; note 1 −−10 nW

only contribution of TEA6320;
power amplifier for 6 W

crosstalk

V



20



bus p p–()

-------------------------- -log
V

o rms()

between bus

note 2 − 110 − dB

inputs and signal outputs

input impedance 25 35 45 kΩ
input isolation of one selected

source to any other input
maximum input voltage

(RMS value)
DC offset voltage at source

f = 1 kHz − 105 − dB
f = 12.5 kHz − 95 − dB
THD < 0.5%; VCC= 8.5 V − 2.15 − V
THD < 0.5%; V

= 7.5 V − 1.8 − V

CC

−−10 mV
selector output by selection of any
inputs

output impedance − 80 120 Ω
output load resistance 10 −−kΩ
output load capacity 0 − 2500 pF
voltage gain, source selector − 0 − dB

input impedance volume input 100 150 200 kΩ
input impedance loudness input 25 33 40 kΩ
output impedance − 80 120 Ω
output load resistance 2 −−kΩ
output load capacity 0 − 10 nF
DC load resistance at output to

4.7 −−kΩ
ground

maximum input voltage

THD < 0.5% − 2.15 − V

(RMS value)
noise output voltage CCIR468-2 weighted; quasi

peak

G

=20dB − 110 220 µV

v

G

=0dB − 33 50 µV

v

G

= −66 dB − 13 22 µV

v

mute position − 10 −µV
total continuous control range − 106 − dB
recommended control range − 86 − dB
step resolution − 1 − dB
step error between any adjoining

−−0.5 dB

step

1995 Dec 19 8

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

∆G

a

∆G

t

MUTE

att

V

offset

Volume I control and loudness

CR

vol

G

v

G

step

L

Bmax

attenuator set error Gv= +20 to −50 dB −−2dB

G

=−51 to −66 dB −−3dB

v

gain tracking error Gv= +20 to −50 dB −−2dB
mute attenuation see Fig.10 100 110 − dB
DC step offset between any

adjoining step
DC step offset between any step to

Gv=0to−66 dB − 0.2 10 mV

G

=20to0dB − 215mV

v

=0to−66 dB −−10 mV

G

v

mute

continuous volume control range − 51 − dB
voltage gain −31 − +20 dB
step resolution − 1 − dB
maximum loudness boost loudness on; referred to

loudness off; boost is

determined by external

components

f = 40 Hz − 17 − dB
f = 10 kHz − 4.5 − dB

Bass control

G

bass

bass control, maximum boost f = 40 Hz 14 15 16 dB
maximum attenuation f = 40 Hz 14 15 16 dB

G

step

step resolution (toggle switching) f = 40 Hz − 1.5 − dB
step error between any adjoining

step

V

offset

DC step offset in any bass position −−20 mV

Treble control

G

treble

treble control, maximum boost f = 15 kHz 11 12 13 dB
maximum attenuation f = 15 kHz 11 12 13 dB
maximum boost f > 15 kHz −−15 dB

G

step

step resolution (toggle switching) f = 15 kHz − 1.5 − dB
step error between any adjoining

step

V

offset

DC step offset in any treble
position

Volume II, balance and fader control

CR continuous attenuation fader and

volume control range

G

step

step resolution − 12dB
attenuation set error −−1.5 dB

f = 40 Hz −−0.5 dB

f = 15 kHz −−0.5 dB

−−10 mV

53.5 55 56.5 dB

1995 Dec 19 9

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Mute function (see Fig.10)

H

ARDWARE MUTE

V

sw

mute active

V

swLOW

I

i

mute passive: level internally defined

V

swHIGH

t

d(mute)

ZERO CROSSING MUTE
I

d

I

ch

V

swDEL

t

d

V

wind

mute switch level (2 × VBE) − 1.45 − V

input level −−1.0 V
input current V

=1V −300 −−µA

swLOW

saturation voltage −−VCCV
delay until mute passive −−0.5 ms

discharge current 0.3 0.6 1.2 µA
charge current −300 −150 −µA
delay switch level (3 × VBE) − 2.2 − V
delay time Cm=10nF − 100 − ms
window for audio signal zero

− 30 40 mV

crossing detection

Muting at power supply drop

V

CCdrop

supply drop for mute active − V19−

− V

0.7

2

Power-on reset (when reset is active the GMU-bit (general mute) is set and the I

C-bus receiver is in

reset position)

V

CC

increasing supply voltage start of

−−2.5 V

reset
end of reset 5.2 6.5 7.2 V
decreasing supply voltage start of

4.2 5.5 6.2 V

reset

Digital part (I

V

iH

V

iL

I

iH

I

iL

V

oL

2

C-bus pins); note 3

HIGH level input voltage 3 − 9.5 V
LOW level input voltage −0.3 − +1.5 V
HIGH level input current −10 − +10 µA
LOW level input current −10 − +10 µA
LOW level output voltage IL=3mA −−0.4 V

Notes to the characteristics

1. The indicated values for output power assume a 6 W power amplifier at 4 Ω with 20 dB gain and a fixed attenuator
of 12 dB in front of it. Signal-to-noise ratios exclude noise contribution of the power amplifier.

2. The transmission contains: total initialization with MAD and subaddress for volume and 8 data words, see also
definition of characteristics, clock frequency = 50 kHz, repetition burst rate = 400 Hz, maximum bus signal
amplitude = 5 V (p-p).

3. The AC characteristics are in accordance with the I2C-bus specification. This specification,

use it

”, can be ordered using the code 9398 393 40011.

“The I2C-bus and how to

1995 Dec 19 10

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

I2C-BUS PROTOCOL

2

C-bus format

I

(1)

S

SLAVE ADDRESS

Notes

1. S = START condition.

2. SLAVE ADDRESS (MAD) = 1000 0000.

3. A = acknowledge, generated by the slave.

4. SUBADDRESS (SAD), see Table 1.

5. DATA, see Table 1; if more than 1 byte of DATA is transmitted, then auto-increment of the significant subaddress is
performed.

6. P = STOP condition.

Table 1 Second byte after MAD

(2)

(3)

A

SUBADDRESS

(4)

(3)

A

DATA

(5)

(3)

A

(6)

P

FUNCTION BIT

765432

(1)

(1)

1

(1)

0

Volume/loudness V 00000000
Fader front right FFR 00000001
Fader front left FFL 00000010
Fader rear right FRR 00000011
Fader rear left FRL 00000100
Bass BA 00000101
Treble TR 00000110
Switch S 00000111

Note

1. Significant subaddress.

MSB LSB

1995 Dec 19 11

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

Table 2 Definition of third byte after MAD and SAD

FUNCTION BIT

MSB LSB

76543210

Volume/loudness V ZCM
Fader front right FFR X
Fader front left FFL X
Fader rear right FRR X
Fader rear left FRL X
Bass BA X
Treble TR X

(4)
(4)
(4)
(4)
(4)
(4)

Switch S GMU

Notes

1. Zero crossing mode.

2. Switch loudness on/off.

3. Volume control.

4. Don’t care bits (logic 1 during testing).

5. Fader control front right.

6. Fader control front left.

7. Fader control rear right.

8. Fader control rear left.

9. Bass control.

10. Treble control.

11. Mute control for all outputs (general mute).

12. Source selector control.

(1)

(11)

LOFF

(4)

X

(4)

X

(4)

X

(4)

X

(4)

X

(4)

X

(4)

X

(2)

V5

FFR5

FFL5
FRR5
FRL5

(4)

X

(4)

X

(4)

X

(3)

(6)

(8)

(5)

(7)

V4

FFR4

FFL4
FRR4
FRL4

BA4

TR4

(4)

X

(3)

(9)

(10)

(6)

(8)

(5)

(7)

V3

FFR3

FFL3
FRR3
FRL3

BA3

TR3

(4)

X

(3)

(9)

(10)

(6)

(5)

(8)

(7)

V2

FFR2

FFL2

FRR2

FRL2

BA2

TR2

SC2

(3)

(9)
(10)
(12)

(6)

(5)

(8)

(7)

V1

FFR1

FFL1

FRR1

FRL1

BA1

TR1

SC1

(3)

(10)
(12)

(9)

(6)

(8)

(5)

(7)

V0

FFR0

FFL0
FRR0
FRL0

BA0

TR0
SC0

(3)

(5)

(6)

(7)

(8)

(9)
(10)
(12)

1995 Dec 19 12

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

Table 3 Volume I setting

G

v

(dB)

Loudness on: the increment of the loudness characteristics is linear at every volume step in the range from
+20 to −11 dB

[phone]
[phone]
[phone]
[phone]
[phone]
[phone]
[phone]
[phone]
[phone]
[phone]
[phone]

+9 110100
+8 110011
+7 110010
+6 110001
+5 110000
+4 101111
+3 101110
+2 101101
+1 101100

0 101011

−1 101010

−2 101001

−3 101000

−4 100111

−5 100110

−6 100101

−7 100100

−8 100011

−9 100010

−10 100001

−11 100000

V5 V4 V3 V2 V1 V0

DATA

1995 Dec 19 13

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

G

v

(dB)

Loudness characteristic is constant in a range from −11 dB to −31 dB

−12 011111

−13 011110

−14 011101

−15 011100

−16 011011

−17 011010

−18 011001

−19 011000

−20 010111

−21 010110

−22 010101

−23 010100

−24 010011

−25 010010

−26 010001

−27 010000

−28 001111

−29 001110

−30 001101

−31 001100

V5 V4 V3 V2 V1 V0

DATA

Repetition of steps in a range from −28 dB to −31 dB

−28 001011

−29 001010

−30 001001

−31 001000

−28 000111

−29 000110

−30 000101

−31 000100

−28 000011

−29 000010

−30 000001

−31 000000

1995 Dec 19 14

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

Table 4 Volume II setting (fader and balance); note 1

DATA

FRR5 FRR4 FRR3 FRR2 FRR1 FRR0

G

v

(dB)

0 111111

−1 111110

−2 111101

−3 111100

−4 111011

−5 111010

−6 111001

−7 111000

−8 110111

−9 110110

−10 110101

−11 110100

−12 110011

−13 110010

−14 110001

−15 110000

−16 101111

−17 101110

−18 101101

−19 101100

−20 101011

−21 101010

−22 101001

−23 101000

−24 100111

−25 100110

−26 100101

−27 100100

−28 100011

−29 100010

−30 100001

−31 100000

−32 011111

−33 011110

−34 011101

FRL5 FRL4 FRL3 FRL2 FRL1 FRL0

FFL5 FFL4 FFL3 FFL2 FFL1 FFL0

FFR5 FFR4 FFR3 FFR2 FFR1 FFR0

1995 Dec 19 15

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

DATA

FRR5 FRR4 FRR3 FRR2 FRR1 FRR0

G

v

(dB)

−35 011100

−36 011011

−37 011010

−38 011001

−39 011000

−40 010111

−41 010110

−42 010101

−43 010100

−44 010011

−45 010010

−46 010001

−47 010000

−48 001111

−49 001110

−50 001101

−51 001100

−52 001011

−53 001010

−54 001001

−55 001000

mute 0 0 0 1 1 1
mute 0 0 0 1 1 0
mute 0 0 0 1 0 1
mute 0 0 0 1 0 0
mute 0 0 0 0 1 1
mute 0 0 0 0 1 0
mute 0 0 0 0 0 1
mute 0 0 0 0 0 0

FRL5 FRL4 FRL3 FRL2 FRL1 FRL0

FFL5 FFL4 FFL3 FFL2 FFL1 FFL0

FFR5 FFR4 FFR3 FFR2 FFR1 FFR0

Note

1. For a particular range the data is always the same, only the subaddress changes.

1995 Dec 19 16

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

Table 5 Bass setting

G

bass

(dB)

BA4 BA3 BA2 BA1 BA0

DATA

+15.0 11111
+13.5 11110
+15.0 11101
+13.5 11100
+15.0 11011
+13.5 11010
+12.0 11001
+10.5 11000
+9.0 10111
+7.5 10110
+6.0 10101
+4.5 10100
+3.0 10011
+1.5 10010

(1)

0

(2)

0

10001
10000

−1.5 01111

−3.0 01110

−4.5 01101

−6.0 01100

−7.5 01011

−9.0 01010

−10.5 01001

−12.0 01000

−13.5 00111

−15.0 00110

−13.5 00101

−15.0 00100

note 3 00011
note 3 00010
note 3 00001

notes 3 and 4 00000

Notes

1. Recommended data word for step 0 dB.

2. Result of 1.5 dB boost and 1.5 dB attenuation.

3. The last four bass control data words mute the bass response.

4. The last bass control and treble control data words (00000) enable the external equalizer connection.

1995 Dec 19 17

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

Table 6 Treble setting

G

(dB)

treble

TR4 TR3 TR2 TR1 TR0

DATA

+12.0 11111
+10.5 11110
+12.0 11101
+10.5 11100
+12.0 11011
+10.5 11010
+12.0 11001
+10.5 11000
+9.0 10111
+7.5 10110
+6.0 10101
+4.5 10100
+3.0 10011
+1.5 10010

(1)

0

(2)

0

10001
10000

−1.5 01111

−3.0 01110

−4.5 01101

−6.0 01100

−7.5 01011

−9.0 01010

−10.5 01001

−12.0 01000

note 3 00111
note 3 00110
note 3 00101
note 3 00100
note 3 00011
note 3 00010
note 3 00001

notes 3 and 4 00000

Notes

1. Recommended data word for step 0 dB.

2. Result of 1.5 dB boost and 1.5 dB attenuation.

3. The last eight treble control data words select treble output.

4. The last treble control and bass control data words (00000) enable the external equalizer connection.

1995 Dec 19 18

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

Table 7 Loudness setting

CHARACTERISTIC DATA LOFF

With loudness 0
Linear 1

Table 8 Selected input

FUNCTION

SC2 SC1 SC0

Stereo inputs IAL and IAR 1 1 1
Stereo inputs IBL and IBR 1 1 0
Stereo inputs ICL and ICR 1 0 1
Stereo inputs IDL and IDR 1 0 0
Mono input IMO 0 X

Note

1. X = don’t care bits (logic 1 during testing).

DATA

(1)

Table 9 Mute mode

FUNCTION

Direct mute off 0 0
Mute off delayed until the next zero

crossing
Direct mute 1 0
Mute delayed until the next zero

crossing

(1)

X

DATA

GMU ZCM

01

11

1995 Dec 19 19

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

18

handbook, full pagewidth

G

bass

(dB)

12

6

0

−6

−12

−18

10

MED423

2

10

3

10

f (Hz)

4

10

Fig.3 Bass control.

15

handbook, full pagewidth

G

treble
(dB)

10

5

0

−5

−10

−15

10

32

10

Fig.4 Treble control.

1995 Dec 19 20

MED424

4

10

f (Hz)

5

10

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

20

handbook, full pagewidth

G

v

(dB)

10

0

−10

−20

−30

−40

10

2

10

3

10

4

10

Fig.5 Volume control with loudness (including low roll-off frequency).

f (Hz)

MED425

5

10

100

handbook, full pagewidth

S/N

(dB)

90

80

70

60

50

−4

10

(1) Vi= 2.0 V.
(2) Vi= 0.5 V.
(3) Vi= 0.2 V.

−3

10

−2

10

−1

10

1

Fig.6 Signal-to-noise ratio; noise weighted: CCIR468-2, quasi peak.

MED426

(1)

(2)
(3)

Po (W)

10

1995 Dec 19 21

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

110

handbook, full pagewidth

S/N

(dB)

100

90

80

70

60

−4

10

(1) Unweighted RMS.
(2) CCIR468-2 RMS.
(3) CCIR468-2 quasi peak.

−3

10

−2

10

Fig.7 Signal-to-noise ratio; Vi= 2 V; P

MED427

(1)

(2)

(3)

−1

10

=6W.

max

1

Po (W)

10

200

handbook, full pagewidth

noise

(µV)

150

100

50

0

−70 −50 −30 −10 10

Stereo/mono inputs.
(1) Loudness on.
(2) Loudness off.

(1)

(2)

Fig.8 Noise output voltage; CCIR468-2, quasi peak.

gain (dB)

MED428

30

1995 Dec 19 22

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

−60

handbook, full pagewidth

(dB)

−80

−100

−120

−140

MED429

2

10

3

10

2 x 10

3

5 x 10

3

4

10

f (Hz)

2 x 10

45020 500200

Fig.9 Muting.

1995 Dec 19 23

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

handbook, full pagewidth

delay switch

mute switch

level

level

V

(1)

1.45

(V)

CC

8.5

U

2.2

TEA6320

zero crossing

mute start

hardware mute switchmute pin 12

ICH = −150 µA

ID = 0.6 µA

0.5 ms delay until
mute passive

100 ms

end of delay hard muteonhard mute

Cm = 10 nF

I

(µA)

0

−150

MED430

t (ms)

off

(1) Typically 2.2 V; referenced to 3 × VBE.

Fig.10 Mute function diagram.

1995 Dec 19 24

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

If the 20 dB gain is not required for the maximum volume
position, it will be an advantage to use the maximum boost
gain and then increased attenuation in the last section,
Volume II.

handbook, halfpage

TEA6320

= 200 mV

I(min)

Vo = 2 V for P

Therefore the loudness will be at the correct place and a
lower noise and offset voltage will be achieved.

POWER STAGE

G = 20 dB

P

= 100 W at 4 ΩV

(max)

(max)

MBE899

a.

a. Gain volume I = 20 dB (G
b. Gain volume I = 20 dB (G

handbook, halfpage

= 200 mV

I(min)

TEA6320

Vo = 1 V for P

POWER STAGE

G = 26 dB

P

= 100 W at 4 ΩV

(max)

(max)

MED431

b.

); gain volume II = 0 dB; fader and balance range = 55 dB.

v(max)

); gain volume II = −6 dB global setting; fader and balance range now 49 dB, previously 55 dB.

v(max)

Fig.11 Level diagram.

1995 Dec 19 25

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

handbook, full pagewidth

+

V

8.5 V

9 × 220 nF

9 × 600 Ω

V

P

CC

4.7 kΩ

inputs

470 µF

16
15
13
11
14
17
18
20
22

31

TEA6320

21921

47

3
4

29
30

100

µFµF

+8.5 V to
oscilloscope

outputs to
oscilloscope

4 × 4.7 µF

4 × 10 kΩ

MED432

Fig.12 Turn-on/off power supply circuit diagram.

10

handbook, full pagewidth

(V)

8

6

4

2

0

01234

(1) VCC.
(2) VO.

(1)

(2)

Fig.13 Turn-on/off behaviour.

t (s)

MED433

5

1995 Dec 19 26

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

handbook, full pagewidth

220 nF 33 nF

100 µF

VCC = 8.5 V

10 kΩ

1000 µF

V

P

0.2 V (RMS)

0.1 µF

47 µF

10 8 7 6 5 12

21
31

2

19

5.6 nF

TEA6320

10 nF

32

1

SCL

SDA

handbook, full pagewidth

V

p

470 µF

600 Ω

input A to D left and right
and input mono

220 nF

23 25 26 27 28

33 nF220 nF

5.6 nF

Fig.14 Test circuit for power supply ripple rejection (RR).

V

V

i

= 8.5 V

CC

0.1 µF

600 Ω

100 µF

47 µF

220 nF

220 nF

220 nF 33 nF

10 8 7 6 5 12

21
31

2

19

input A to D right and left

input A to D left and right
and input mono

5.6 nF

TEA6320

output right

output left

front and rear

10 nF

output left

output right

front and rear

MED434

32

1

4.7 µF

4.7 µF

SCL

SDA

V

V

O

O

23 25 26 27 28

Fig.15 Test circuit for channel separation (αcs).

1995 Dec 19 27

33 nF220 nF

5.6 nF

MED435

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

Selection of input signals by using the zero crossing
mute mode

A selection from input A (IAL) to input B (IBL) left sources
produces a modulation click depending on the difference
of the signal values at the time of switching.

the maximum possible difference between signals is

At t

1

7 V(p-p) (see Fig. 16) and gives a large click. Using the
cross detector no modulation click is audible.

For example: The selection is enabled at t1, the
microcontroller sets the zero cross bit (ZCM = 1) and then
the mute bit (GMU = 1) via the I2C-bus. The output signal

handbook, full pagewidth

V

4
3

2
1
0

−1

−2

−3

t

1

follows the input A signal, until the next zero crossing
occurs and then activates mute.

After a fixed delay time at t2, the microcontroller sends the
bits for input switching and mute inactive.

The output signal remains muted until the next signal zero
crossing of input B (IBL) occurs, and then follows that
signal.

The delay time t2− t1 is e.g. 40 ms. Therefore the capacity
Cm= 3.3 nF. The zero cross function is working at the
lowest frequency of 40 Hz determined by the Cm capacitor.

MED436

(1)

(2)

t

2

(3)

t

−4

(1) Input A (IAL).
(2) Output.
(3) Input B (IBL).

Fig.16 Zero cross function; only one channel shown.

1995 Dec 19 28

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

Loudness filter calculation example

Figure 17 shows the basic loudness circuit with an
external low-pass filter application. R1 allows an
attenuation range of 21 dB while the boost is determined
by the gain stage V2. Both result in a loudness control
range of +20 to −12 dB.

Defining f

as the frequency where the level does not

ref

change while switching loudness on/off. The external
resistor R3 for f

=

R3 R1

--------------------­110

→∞ can be calculated as:

ref

G

v

------ ­20

10

–

. With G

G

v

------ ­20

= −21 dB and R1 = 33 kΩ,

v

R3 = 3.2 kΩ is generated.
For the low-pass filter characteristic the value of the

external capacitor C1 can be determined by setting a
specific boost for a defined frequency and referring the

at f

gain to G

1

--------------------­j ω C1()

as indicated above.

v

ref

R1 R3+()10

=

-------------------------------------------------------------­110

–

G

------ ­20

G

v

------ ­20

R3–×

v

andbook, halfpage

C

KVL

C1

R3

0 dB

8

V

1

R1

33 kΩ

9

V

2

Fig.17 Basic loudness circuit.

R2

MED437

For example: 3 dB boost at f = 1 kHz
G

v=Gv(ref)

+ 3 dB = −18 dB; f = 1 kHz and C1 = 100 nF.

If a loudness characteristic with additional high frequency
boost is desired, an additional high-pass section has to be
included in the external filter circuit as indicated in the
block diagram. A filter configuration that provides
AC coupling avoids offset voltage problems.

1995 Dec 19 29

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

INTERNAL PIN CONFIGURATIONS

Values shown in Figs 18 to 30 are typical DC values;
VCC= 8.5 V.

3

+

1

5 V

1.8 kΩ

80 Ω

MBE900

4.25 V

Fig.18 Pin 1: SDA (I2C-bus data).

5

4.25 V
+

2.4 kΩ

MBE902

+

MBE901

Fig.19 Pins 3, 4, 29, 30: output signals.

+

6

80 Ω

4.25 V

MBE903

Fig.20 Pins 5 and 28: treble control capacitors.

1995 Dec 19 30

Fig.21 Pins 6 and 27: bass control capacitor outputs.

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

7

4.16 kΩ

4.25 V
+

8

4.25 V
+

9.4 kΩ

4.25 V

MBE904

Fig.22 Pins 7 and 26: bass control capacitor inputs.

9

4.25 V
+

150 kΩ

4.25 V

MED438

Fig.23 Pins 8 and 25: input volume 1, control part.

+

10

4.25 V

80 Ω

1.12 kΩ

MBE905

Fig.24 Pins 9 and 24: input loudness, control part.

1995 Dec 19 31

MBE906

Fig.25 Pins 10 and 23: output source selector.

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

12

8.5 V

MBE908

constant

2.2 V

35 kΩ

4.25 V

11

4.25 V

+

1.3 kΩ

+

maximum
200µA

0.6 µA
constant

MBE907

4.5 kΩ

Fig.26 Pins 11, 13 to 18, 20, 22: inputs.

8.4 V

19

5 kΩ

Fig.28 Pin 19: filtering for supply; pin 21: reference voltage.

31

apply +8.5 V to this pin

4.25 V
21

4.7 kΩ
300 Ω

+

Fig.27 Pin 12: mute control.

+

3.4 kΩ

3.4 kΩ

MHA063

32

5 V

1.8 kΩ

MBE909

Fig.29 Pin 31: supply voltage.

1995 Dec 19 32

MED440

Fig.30 Pin 32: SCL (I2C-bus clock).

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

PACKAGE OUTLINES

SDIP32: plastic shrink dual in-line package; 32 leads (400 mil)

D

seating plane

L

Z

32

pin 1 index

e

b

SOT232-1

M

E

A

2

A

A

1

w M

b

1

17

E

c

(e )

M

1

H

1

0 5 10 mm

scale

DIMENSIONS (mm are the original dimensions)

A

A

A

UNIT b

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

mm

OUTLINE
VERSION

SOT232-1

max.

4.7 0.51 3.8

12

min.

max.

IEC JEDEC EIAJ

1.3

0.8

b

1

0.53

0.40

REFERENCES

0.32

0.23

cEe M

(1) (1)

D

29.4

28.5

1995 Dec 19 33

9.1

8.7

16

(1)

Z

L

3.2

2.8

EUROPEAN

PROJECTION

M

10.7

10.2

E

12.2

10.5

e

1

w

H

0.181.778 10.16

ISSUE DATE

92-11-17
95-02-04

max.

1.6

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

SO32: plastic small outline package; 32 leads; body width 7.5 mm

D

y

Z

32

pin 1 index

1

e

17

16

w M

b

p

SOT287-1

E

c

H

E

A

2

A

1

L

detail X

A

X

v M

A

Q

(A )

L

p

A

3

θ

0 5 10 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

OUTLINE

VERSION

SOT287-1

A

max.

2.65

0.10

A1A2A

0.3

2.45

0.1

2.25

0.012

0.096

0.004

0.086

IEC JEDEC EIAJ

0.25

0.01

b

p

3

0.49

0.27

0.36

0.18

0.02

0.011

0.01

0.007

UNIT

inches

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

(1)E(1)

cD

20.7

20.3

0.81

0.80

REFERENCES

7.6

7.4

0.30

0.29

1.27

0.050

1995 Dec 19 34

eHELLpQZywv θ

10.65

10.00

0.419

0.394

1.4

0.055

1.1

0.4

0.043

0.016

1.2

1.0

0.047

0.039

0.25 0.1

0.25

0.010.01

EUROPEAN

PROJECTION

0.004

(1)

0.95

0.55

0.037

0.022

ISSUE DATE

95-01-25
97-05-22

o

8

o

0

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in

“IC Package Databook”

our

(order code 9398 652 90011).

SDIP

SOLDERING BY DIPPING OR BY WA VE
The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T

stg max

). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

R

EPAIRING SOLDERED JOINTS

Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.

SO

REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO

packages.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

AVE SOLDERING

W
Wave soldering techniques can be used for all SO

packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be
parallel to the solder flow.

• The package footprint must incorporate solder thieves at
the downstream end.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

EPAIRING SOLDERED JOINTS

R
Fix the component by first soldering two diagonally-

opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

1995 Dec 19 35

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

2

PURCHASE OF PHILIPS I

C COMPONENTS

2

Purchase of Philips I
components in the I2C system provided the system conforms to the I2C specification defined by
Philips. This specification can be ordered using the code 9398 393 40011.

C components conveys a license under the Philips’ I2C patent to use the

1995 Dec 19 36

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

NOTES

1995 Dec 19 37

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

NOTES

1995 Dec 19 38

Philips Semiconductors Preliminary specification

Sound fader control circuit TEA6320

NOTES

1995 Dec 19 39

Philips Semiconductors – a worldwide company

Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428)

BUENOS AIRES, Tel. [phone], Fax. [phone]

Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]

Austria: Triester Str. 64, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]

Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands,

Tel. [phone], Fax. [phone]

Brazil: Rua do Rocio 220 - 5

CEP: 04552-903-SÃO PAULO-SP, Brazil,
P.O. Box 7383 (01064-970),
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS:

Tel. [phone], Fax. [phone]

Chile: Av. Santa Maria 0760, SANTIAGO,

Tel. [phone], Fax. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: IPRELENSO LTDA, Carrera 21 No. 56-17,

77621 BOGOTA, Tel. [phone],
Fax. [phone]

Denmark: Prags Boulevard 80, PB 1919, DK-2300

COPENHAGEN S, Tel. [phone], Fax. [phone]

Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]

France: 4 Rue du Port-aux-Vins, BP317,

92156 SURESNES Cedex,
Tel. [phone], Fax. [phone]

Germany: P.O. Box 10 51 40, 20035 HAMBURG,

Tel. [phone], Fax. [phone]

Greece: No. 15, 25th March Street, GR 17778 TAVROS,

Tel. [phone] 911, Fax. [phone]

India: Philips INDIA Ltd, Shivsagar Estate, A Block,

Dr. Annie Besant Rd. Worli, Bombay 400 018
Tel. [phone], Fax. [phone]

Indonesia: Philips House, Jalan H.R. Rasuna Said Kav. 3-4,

P.O. Box 4252, JAKARTA 12950,
Tel. [phone], Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS S.r.l.,

Piazza IV Novembre 3, 20124 MILANO,
Tel. [phone], Fax. [phone]

Japan: Philips Bldg13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong,

Yongsan-ku, SEOUL, Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA,

SELANGOR, Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TX 79905,

Tel. [phone], Fax. [phone]

th

floor, Suite 51,

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]

New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]

Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: Philips Electrical Industries of Pakistan Ltd.,

Exchange Bldg. ST-2/A, Block 9, KDA Scheme 5, Clifton,
KARACHI 75600, Tel. [phone],
Fax. [phone]

Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Portugal: PHILIPS PORTUGUESA, S.A.,

Rua dr. António Loureiro Borges 5, Arquiparque - Miraflores,
Apartado 300, 2795 LINDA-A-VELHA,
Tel. [phone], Fax. [phone]

Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. [phone], Fax. [phone]

South Africa: S.A. PHILIPS Pty Ltd.,

195-215 Main Road Martindale, 2092 JOHANNESBURG,
P.O. Box 7430, Johannesburg 2000,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,

Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla. S-164 85 STOCKHOLM,

Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,

Tel. [phone], Fax. [phone]

Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West

Road, Sec. 1. Taipeh, Taiwan ROC, P.O. Box 22978,
TAIPEI 100, Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,

209/2 Sanpavuth-Bangna Road Prakanong,
Bangkok 10260, THAILAND,
Tel. [phone], Fax. [phone]

Turkey:Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,

Tel. [phone], Fax. [phone]

Ukraine: Philips UKRAINE, 2A Akademika Koroleva str., Office 165,

252148 KIEV, Tel.[phone], Fax. [phone]

United Kingdom: Philips Semiconductors LTD.,

276 Bath Road, Hayes, MIDDLESEX UB3 5BX,
Tel. [phone], Fax. [phone]

United States:811 East Arques Avenue, SUNNYVALE,

CA 94088-3409, Tel. [phone], Fax. [phone]

Uruguay: Coronel Mora 433, MONTEVIDEO,

Tel. [phone], Fax. [phone]

Internet: http://www.semiconductors.philips.com/ps/
For all other countries apply to: Philips Semiconductors,

International Marketing and Sales, Building BE-p,
P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands,
Telex 35000 phtcnl, Fax. [phone]

SCDS47 © Philips Electronics N.V. 1995

All rights are reserved. Reproduction in whole or in part is prohibited without the
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The information presented in this document does not form part of any quotation
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Printed in The Netherlands

513061/1100/02/pp40 Date of release: 1995 Dec 19
Document order number: 9397 750 00533