Datasheet TEA1610T, TEA1610P Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TEA1610P; TEA1610T

Zero-voltage-switching
resonant converter controller

Product specification
File under Integrated Circuits, IC11

2001 Apr 25

Philips Semiconductors Product specification

Zero-voltage-switching
resonant converter controller

FEATURES

• Integrated high voltage level-shift function

• Integrated high voltage bootstrap diode

• Transconductance error amplifier for ultra high-ohmic

regulation feedback

• Latched shut-down circuit for overcurrent and
overvoltage protection

• Low start-up current (green function)

• Adjustable minimum and maximum frequencies

• Adjustable dead time

• Undervoltage lockout.

GENERAL DESCRIPTION

The TEA1610 is a monolithic integrated circuit
implemented ina high-voltage DMOS process. The circuit
is a high voltage controller for a zero-voltage switching
resonant converter. The IC provides the drive function for
two discrete power MOSFETs in a half-bridge
configuration. It also includes a level-shift circuit, an
oscillator with accurately-programmable frequency range,
a latched shut-down function and a transconductance
error amplifier.

handbook, halfpage

V

DD

TEA1610

signal

ground

TEA1610P; TEA1610T

V

HS

bridge voltage
supply
(high side)

MOSFET

SWITCH

HALF-

BRIDGE

CIRCUIT

power ground

Fig.1 Basic configuration.

RESONANT

CONVERTER

MGU336

To guarantee an accurate 50% switching duty factor, the
oscillator signal passes through a divide-by-two flip-flop
before being fed to the output drivers.

The circuit is very flexible and enables a broad range of
applications for different mains voltages.

APPLICATIONS

• TV and monitor power supplies

• High voltage power supplies.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MAX. UNIT

V

HS

I

GH(source)

I

GH(sink)

f

bridge(max)

; I

; I

GL(sink)

GL(source)

bridge voltage supply (high side) 600 V
gate driver source current −225 mA
gate driver sink current 300 mA
maximum bridge frequency Cf= 100 pF (see

550 kHz

Fig.10)

V

I(CM)

error amplifier common mode input voltage 2.5 V

ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME DESCRIPTION VERSION

TEA1610P DIP16 plastic dual in-line package; 16 leads (300 mil); long body SOT38-1
TEA1610T SO16 plastic small outline package; 16 leads; body width 3.9 mm;

SOT109-2

low stand-off height

2001 Apr 25 2

Philips Semiconductors Product specification

Zero-voltage-switching
resonant converter controller

BLOCK DIAGRAM

handbook, full pagewidth

V

DD

11

SUPPLY

BOOTSTRAP

TEA1610

reset

start/stop oscillation

shut-down

LEVEL

SHIFTER

LOGIC

TEA1610P; TEA1610T

8

V

DD(F)

HIGH SIDE

DRIVER

LOW SIDE

DRIVER

7

GH

6

SH

10

GL

4

PGND

15

SD

SGND

9

2

+

I

−

I

1

gm

ERROR

AMPLIFIER

2.5 V

5

n.c.

start-up

3

VCO

2.33 V

2

÷

×

2

REF

0.6 V

16

12

IFS CFIRS

3 V

14

V

I

charge

OSCILLATOR

I

discharge

13

MGU337

Fig.2 Block diagram.

2001 Apr 25 3

Philips Semiconductors Product specification

Zero-voltage-switching
resonant converter controller

PINNING

SYMBOL PIN DESCRIPTION

I− 1 error amplifier inverting input
I+ 2 error amplifier non-inverting input
VCO 3 error amplifier output
PGND 4 power ground
n.c. 5 not connected (high voltage spacer)
SH 6 high side switch source
GH 7 gate of the high side switch
V

DD(F)

SGND 9 signal ground
GL 10 gate of the low side switch
V

DD

IFS 12 oscillator discharge current input
CF 13 oscillator capacitor
IRS 14 oscillator charge current input
SD 15 shut-down input
V

REF

8 floatingsupply voltage for the high side

driver

11 supply voltage

16 reference voltage

handbook, halfpage

Fig.3 Pin configuration: TEA1610P.

VCO

PGND

V

DD(F)

TEA1610P; TEA1610T

−

I

n.c.

SH

GH

+

I

1
2
3
4

TEA1610P

5
6
7
8

MGU338

16

V

REF

15

SD

14

IRS

13

CF

12

IFS

11

V

DD

10

GL

9

SGND

2001 Apr 25 4

handbook, halfpage

Fig.4 Pin configuration: TEA1610T.

VCO

PGND

V

DD(F)

n.c.

SH

GH

−

I

1

+

I

2
3
4

16

V

REF

15

SD

14

IRS

13

CF

TEA1610T

5
6
7
8

MGU347

12

IFS

11

V

DD

10

GL

9

SGND

Philips Semiconductors Product specification

Zero-voltage-switching
resonant converter controller

FUNCTIONAL DESCRIPTION
Start-up

When the applied voltage at VDD reaches V

DD(initial)

Fig.5), the low side power switch is turned-on while the
high side power switch remains in the non-conducting
state. This start-up output state guarantees the initial
charging of the bootstrap capacitor (C

) used for the

boot

floating supply of the high side driver.

handbook, full pagewidth

V

DD

0

(see

TEA1610P; TEA1610T

Duringstart-up,thevoltageonthe frequency capacitor (Cf)
is zero and defines the start-up state. The output voltage
of the error amplifier is kept constant (typ. 2.5 V) and
switching starts at about 80% of the maximum frequency
at the moment pin VDD reaches the start level.

The start-up state is maintaineduntil VDDreaches the start
level (13.5 V), the oscillator is activated and the converter
starts operating.

V

DD(start)

V

DD(initial)

GH-SH

GL

0

0

t

MGT998

Fig.5 Start-up.

2001 Apr 25 5

Philips Semiconductors Product specification

Zero-voltage-switching
resonant converter controller

Oscillator

The internal oscillator is a current-controlled oscillator that
generates a sawtooth output. The frequency of the
sawtooth is determined by the external capacitor Cf and
the currents flowing into the IFS and IRS pins.

handbook, full pagewidth

CF

GH-SH

0

TEA1610P; TEA1610T

The minimum frequency and the dead time are set by the
capacitor Cf and resistors R
frequency is set by resistor R∆f(see Fig.10). The oscillator
frequency is exactly twice the bridge frequency to achieve
an accurate 50% duty factor. An overview of the oscillator
and driver signals is given in Fig.6.

and Rdt. The maximum

f(min)

GL

0

dead time (high to low) dead time (low to high)

t

MGT999

Fig.6 Oscillator and driver signals.

2001 Apr 25 6

Philips Semiconductors Product specification

Zero-voltage-switching
resonant converter controller

Dead time resistor Rdt(see Fig.10)

The dead time resistor R
reference pin (V

REF

voltage on the IFS pin is kept constant at a temperature
independant value of 0.6 V. The current that flows into the
IFS pin is determined by the value of resistor R

2.4 V voltage drop across this resistor. The IFS input

current equals the discharge current of capacitor C
determines the falling slope of the oscillator.

The falling slope time is used to create a dead time (tdt)
between two successive switching actions of the
half-bridge switches:

I

t

t

2.4 V

=

------------- -

IFS

Cf∆V

=

------------------------ -

dt

=

IFStdt

R

dt

×

Cf

I

IFS

Minimum frequency resistor (see Fig.10)
TheR

resistorisconnectedbetweentheV

f(min)

reference voltage) and the IRS current input (held at a
temperature independant voltage level of 0.6 V). The
charge current of the capacitor Cf is twice the current
flowing into the IRS pin.

The R

resistor has a voltage drop of 2.4 V and its

f(min)

resistance defines the minimum charge current (rising
slope) of the Cfcapacitor if the control current is zero. The
minimum frequency is defined by this minimum charge
current (I

) and the discharge current:

IRS1

is connected between the 3 V

dt

) and the IFS current input pin. The

and the

dt

and

f

pin(3 V

REF

TEA1610P; TEA1610T

resistor. As a result, the charge current I

R

f(min)

increases and the oscillation frequency increases. As the
falling slope of the oscillator is constant, the relationship
between the output frequency and the charge current is
not a linear function (see Figs 7 and 9):

I

IRS2

t

IRS2

V

=

---------------------------- -

------------------------------- ­I

0.6–

VCO

R∆f

Cf∆V

×

Cf

+

IRS1IIRS2

2×=

The maximum output voltage of the error amplifier and the
value of R

I

IRS2 max()

t

IRS min()

f

max

T

osctIRS min()

determine the maximum frequency:

∆f

=

------------------------------------------­I

1

=

---------­T

osc

V

VCO max()

----------------------------------------- -

Cf∆V

×

+

IRS1IIRS2(max)

+=

R

∆f

t

IFS

Cf

0.6–

2×=

Bridge frequency accuracy is optimum in the low
frequencyregion.Athigher frequencies both the dead time
and the oscillator frequency show a decay.

The frequency of the oscillator depends on the value of
capacitor Cf, the peak-to-peak voltage swing VCf and the
charge and discharge currents. However, at higher
frequencies the accuracy decreases due to delays in the
circuit.

CF

=

----------------­R

Cf∆V

=

------------------------ -

=

----------------------- ­tdtt

2.4 V

fmin()

×

2I

×

IRS1

1

+

IRS1

Cf

I

IRS1

t

IRS1

f

min

Maximum frequency resistor

The output voltage is regulated by changing the frequency
of the half-bridge converter. The maximum frequency is
determinedbytheR∆fresistorwhichisconnected between
the error amplifier output VCO and the oscillator current
input pin IRS. The current that flows through the R
resistor (I

) is added to the current flowing through the

IRS2

∆f

2001 Apr 25 7

handbook, halfpage

f

f

osc(max)

f

osc(start)

f

osc(min)

osc

0

Fig.7 Frequency range.

I

IRS

MGW001

Philips Semiconductors Product specification

Zero-voltage-switching
resonant converter controller

Error amplifier

The error amplifier is a transconductance amplifier. Thus
the output current at pin VCO is determined by the
amplifier transconductance and the differential voltage on
input pins I+ and I−. The output current I
IRS input of the current-controlled oscillator.

The source capability of the error amplifier increases
current in the IRS pin when the differential input voltage is
positive. Therefore the minimum current is determined by
resistor R

and the minimum frequency setting is

f(min)

independent of the characteristics of the error amplifier.
The error amplifier has a maximum output current of

0.5 mA for an output voltage up to 2.5 V. If the source

currentdecreases,theoscillator frequency also decreases
resulting in a higher regulated output voltage.

During start-up, the output voltage of the amplifier is held
at a constant value of 2.5 V. This voltage level defines,
together with resistor R∆f, the initial switching frequency of
the TEA1610 after start-up.

is fed to the

VCO

TEA1610P; TEA1610T

Shut-down

The shut-down input (SD) has an accurate threshold level
of 2.33 V. When the voltage on input SD reaches 2.33 V,
both power switches immediately switch off and the
TEA1610 enters shut-down mode.

Duringshut-down mode, pin VDDisclamped by an internal
Zener diode at 12.0 V with 1 mA input current. This clamp
prevents VDD rising above the rating of 14 V due to low
supply current to the TEA1610 in shut-down mode.

When the TEA1610 is in the shut-down mode, it can be
activated again only by lowering VDDbelow the VDDreset
level (5.3 V typical). The shut-down latch is then reset and
a new start-up cycle can commence (see Fig.8).

handbook, full pagewidth

V

DD

SD

GH-SH

GL

oscillation shut-

0

0

supply

down

off

Fig.8 Shut-down.

start-up oscillation

t

V

DD(start)

V

DD(sdc)

V

DD(reset)

V

SD(th)

MGW002

2001 Apr 25 8

Philips Semiconductors Product specification

Zero-voltage-switching

TEA1610P; TEA1610T

resonant converter controller

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134); all voltages are referred to the ground pins
which must be interconnected externally; positive currents flow into the IC.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Voltages

V

SH

V

DD

V

I+

V

I−

V

SD

Currents

I

IFS

I

IRS

I

REF

Power and temperature

P

tot

T

amb

T

stg

Handling

V

ES

high side driver voltage 0 600 V
supply voltage 0 14 V
amplifier non-inverting input voltage 0 5 V
amplifier inverting input voltage 0 5 V
shut-down input voltage 0 5 V

oscillator falling slope input current − 1mA
oscillator rising slope input current − 1mA
V

source current −−2mA

REF

total power dissipation T

<70°C − 0.8 W

amb

ambient temperature operating −25 +70 °C
storage temperature −25 +150 °C

electrostatic handling voltage note 1 − 2000 V

note 2 − 200 V

Notes

1. Human body model class 2: equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor.

2. Machine model class 2: equivalent to discharging a 200 pF capacitor through a 0.75 µH coil and 10 Ω resistor.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

R

th(j-pin)

thermal resistance from junction to ambient in free air 100 K/W
thermal resistance from junction to pin 50 K/W

QUALITY SPECIFICATION

In accordance with

“SNW-FQ-611-E”

.

2001 Apr 25 9

Philips Semiconductors Product specification

Zero-voltage-switching

TEA1610P; TEA1610T

resonant converter controller

CHARACTERISTICS

All voltages are referred to the ground pins which must be connected externally; positive currents flow into the IC;
VDD= 13 V and T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

High voltage pins V

I

L

leakage current V

Supply pin V

V

DD(initial)

supply voltage for defined driver
output

V

DD(start)

V

DD(stop)

V

DD(hys)

V

DD(sdc)

V

DD(reset)

I

DD

start oscillator voltage 12.9 13.4 13.9 V
stop oscillator voltage 9.0 9.4 9.8 V
start-stop hysteresis voltage 3.8 4.0 4.2 V
shut-down clamp voltage low side off; high side off;

reset voltage 4.5 5.3 6.0 V
supply current:

Reference voltage pin V

V

REF

I

REF

Z

o(VREF)

∆V

----------------- ­∆T

REF

reference voltage I
current capability source only −1.0 −−mA
output impedance I
temperature coefficient I

=25°C; tested in the circuit of Fig.10; unless otherwise specified.

amb

, GH and SH

DD(F)

, VGHand VSH= 600 V −−30 µA

DD(F)

DD

low side on; high side off − 45V

11.0 12.0 13.0 V

IDD=1mA

start-up low side on; high side off 130 180 220 µA
operating C

= 100 pF; I

f

I

=50µA; Co= 200 pF;

IRS

IFS

= 0.5 mA;

− 2.4 − mA

note 1

shut-down low side off; high side off;

V

=9V

DD

REF

= 0 mA 2.9 3.0 3.1 V

REF

= −1mA − 5.0 −Ω

REF

= 0; Tj=25to150°C −−0.3 − mV/K

REF

− 130 180 µA

Current controlled oscillator pins IRS, IFS, CF

I

CF(ch)(min)

I

CF(ch)(max)

V

IRS

I

CF(dis)(min)

I

CF(dis)(max)

V

IFS

f

bridge(min)

minimum CF charge current I
maximum CF charge current I
pin IRS voltage I
minimum CF discharge current I
maximum CF discharge current I
pin IFS voltage I
minimum bridge frequency (for

=15µA; VCF= 2 V 28 30 32 µA

IRS

= 200 µA; VCF= 2 V 340 380 420 µA

IRS

= 200 µA 570 600 630 mV

IRS

=50µA; VCF= 2 V 47 50 53 µA

IRS

= 1 mA; VCF= 2 V 0.93 0.98 1.03 mA

IFS

= 1 mA 570 600 630 mV

IFS

CF= 100 pF; I

stable operation)

I

=50µA;

IRS

f

bridge(max)

maximum bridge frequency Cf= 100 pF; I

I

= 200 µA; ;

IRS

note 2

2001 Apr 25 10

= 0.5 mA;

IFS

f

bridge

= 1 mA;

IFS

f

bridge

188 200 212 kHz

f

osc

=

-------­2

450 500 550 kHz

f

osc

=

-------­2

Philips Semiconductors Product specification

Zero-voltage-switching

TEA1610P; TEA1610T

resonant converter controller

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CF(L)

V

CF(H)

V

Cf(p-p)

t

dt

Output drivers

I

GH(source)

I

GH(sink)

I

GL(source)

I

GL(sink)

V

GH(H)

V

GH(L)

V

GL(H)

V

GL(L)

V

d(boot)

Shut-down input pin SD

I

SD

V

SD(th)

Error amplifier pins I+, I−, VCO

I

I(CM)

V

I(CM)

V

I(offset)

g

m

A

o

GB gain bandwidth product R
V

VCO(max)

I

VCO(max)

V

VCO(start)

Notes

1. Supply current IDD will increase with increasing bridge frequency to drive the capacitive load of two MOSFETs.
Typical MOSFETs for the TEA1610 application are 8N50 (Philips type PHX80N50E, Q
will increase the supply current at 150 kHz according to the following formula:
∆IDD=2×Q

2. The frequency of the oscillator depends on the value of capacitor Cf, the peak-to-peak voltage swing VCF and the
charge/discharge currents I

CF trip level LOW DC level − 1.27 − V
CF trip level HIGH DC level − 3.0 − V
Cfvoltage (peak-to-peak value) 1.63 1.73 1.83 V
dead time Cf= 100 pF; I

I

=50µA

IRS

high side output source current V
high side output sink current V

=13V; VSH= 0; VGH=0 −135 −180 −225 mA

DD(F)

=13V; VSH=0;

DD(F)

= 0.5 mA;

IFS

0.37 0.40 0.43 µs

− 300 − mA

VGH=13V
low side output source current VGL=0 −135 −180 −225 mA
low side output sink current VGL=14V − 300 − mA
high side output voltage HIGH V

=13V; VSH=0;

DD(F)

10.8 12 − V

IGH=10mA
high side output voltage LOW V

=13V; VSH=0;

DD(F)

− 0.2 0.5 V

IGH=10mA
low side output voltage HIGH IGL= 10 mA 10.8 12 − V
low side output voltage LOW IGL=10mA − 0.2 0.5 V
bootstrap diode voltage drop I = 5 mA 1.5 1.8 2.1 V

input current VSD= 2.33 V 0 0.2 0.5 µA
threshold level 2.26 2.33 2.40 V

common mode input current V

=1V −−0.1 −0.5 µA

I(CM)

common mode input voltage −−2.5 V
input offset voltage V
transconductance V
open loop gain RL=10kΩto GND; V

=1V; I

I(CM)

= 1 V; source only − 330 −µA/mV

I(CM)

=10kΩto GND; V

L

= −10 mA −2 0 +2 mV

VCO

=1V − 70 − dB

I(CM)

=1V − 5 − MHz

I(CM)

maximum output voltage operating; RL=10kΩ to GND 3.2 3.6 4.0 V
maximum output current operating; V
output voltage during start-up I

g(tot)

× f

=2×55 nC × 150 kHz = 16.5 mA.

bridge

CF(ch)

and I

CF(dis)

.

= 0.3 mA 2.30 2.50 2.70 V

VCO

=1V −0.4 −0.5 −0.6 mA

VCO

= 55 nC typ.) and these

g(tot)

2001 Apr 25 11

Philips Semiconductors Product specification

Zero-voltage-switching
resonant converter controller

APPLICATION INFORMATION

An application example of a zero-voltage-switching
resonant converter application using TEA1610 is shown in
Fig.10. In the off-mode the VDDvoltage is pulled below the
stop level of 9.4 V by the 7.5 V Zener diode and the
half-bridge is not driven. In the on-mode the TEA1610
starts-up with a high-ohmic bleeder resistor. After passing
the level for start of oscillation, the TEA1610 is in normal
operating mode and consumes the normal supply current
delivered by the 12 V supply. The dead time is set by R
and Cf. The minimum frequency is adjusted by R
the frequency range is set by R∆f. The output voltage is
adjusted with a potentiometer connected to the inverting
input of the error amplifier and is regulated via a feedback
circuit. The shut-down input is used for overvoltage
protection.Toprevent interference, filter capacitors can be
added on pins IFS, IRS and V

. The maximum value of

REF

each filter capacitor is 100 pF.

f(min)

dt

and

TEA1610P; TEA1610T

Practical values of the application example are given in
Fig.9 in which the measured oscillator frequency with
capacitor Cf= 220 pF is shown as a function ofthe charge
currentI
differs from the theoretical frequency (frequency set)
calculated as described in Section “Maximum frequency
resistor”.

The measured dead time is directly related to charge
current (total current flowing into pin IRS) and therefore to
oscillator frequency.

The measured frequency graph can be used to determine
the required R∆fresistor for a certain maximum frequency
in an application with the same value of capacitor Cf.

More application information can be found in application
note

.Notethattheslopeofthemeasuredfrequency

IRS

“AN99011”

.

800

handbook, full pagewidth

f

osc

(kHz)

600

400

200

0

0 60 80 100 1204020

f

at I

IFS

=2×f

= 500 µA.

bridge

osc

f

osc

MGW003

dead time (low to high)

dead time (high to low)

frequency set

.

frequency measured

140 160 180

I

IRS

(µA)

200

1200

t

dt

(ns)

900

600

300

0

Fig.9 Oscillator frequency and measured dead time as functions of charge current I

2001 Apr 25 12

IRS

.

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2001 Apr 25 13

bridge voltage supply (high side)

12 V

7.5 V

on/off

signal
ground

regulator
feedback

SGND

+

I

−

I

9

2
1

AMPLIFIER

gm

ERROR

R

VDD

V

DD

11

bootstrap diode

SUPPLY

3

VCO

C

VDD

TEA1610

R

∆f

C

SS

14

R

3 V

f(min)

SHIFTER

16
V

REF

R

LEVEL

LOGIC

dt

handbook, full pagewidth

HIGH SIDE

LOW SIDE

2

÷

OSCILLATOR

0.6 V
12

IFS CFIRS

DRIVER

DRIVER

13

C

f

2.33 V

output voltage

V

8

DD(F)

GH

7

SH

GL

PGND

SD

C

boot

SGND

power ground

overvoltage protection

6

10

4

15

L

C

r(ext)

p

L

p

MGU339

Philips Semiconductors Product specification

Zero-voltage-switching

resonant converter controller

C

r

TEA1610P; TEA1610T

Fig.10 Application diagram.

Philips Semiconductors Product specification

Zero-voltage-switching
resonant converter controller

PACKAGE OUTLINES

DIP16: plastic dual in-line package; 16 leads (300 mil); long body

D

seating plane

L

Z

16

e

b

b

1

9

A

w M

TEA1610P; TEA1610T

SOT38-1

M

E

A

2

A

1

c

(e )

1

M

H

pin 1 index

1

0 5 10 mm

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A

UNIT

mm

inches

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

A

max.

4.7 0.51 3.7

OUTLINE
VERSION

SOT38-1

min.

A

1 2

max.

0.15

IEC JEDEC EIAJ

050G09 MO-001 SC-503-16

b

1.40

1.14

0.055

0.045

b

1

0.53

0.38

0.021

0.015

cEe M

D

0.32

21.8

0.23

21.4

0.013

0.009

REFERENCES

0.86

0.84

8

scale

(1) (1)

6.48

6.20

0.26

0.24

E

(1)

Z

e

0.30

1

0.15

0.13

M

L

3.9

3.4

E

8.25

7.80

0.32

0.31

EUROPEAN

PROJECTION

9.5

8.3

0.37

0.33

w

H

0.2542.54 7.62

0.010.100.0200.19

ISSUE DATE

95-01-19
99-12-27

max.

2.2

0.087

2001 Apr 25 14

Philips Semiconductors Product specification

Zero-voltage-switching

TEA1610P; TEA1610T

resonant converter controller

SO16: plastic small outline package; 16 leads; body width 3.9 mm; low stand-off height

D

c

y

Z

16

9

E

H

E

SOT109-2

A

X

v M

A

pin 1 index

4.0

3.8

0.16

0.15

8

b

p

scale

eHELLpQZywv θ

1.27

0.050

1

e

0 2.5 5 mm

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

A

max.

1.65

0.065

A

1

0.20

0.05

0.008

0.002

A2A

1.45

1.25

0.057

0.049

0.25

0.01

b

3

p

0.49

0.25

0.36

0.19

0.019

0.0100

0.014

0.0075

UNIT

inches

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

(1)E(1) (1)

cD

10.0

9.8

0.39

0.38

w M

6.2

5.8

0.244

0.228

A

2

1.05

0.041

Q

A

1

detail X

1.0

0.7

0.4

0.6

0.028

0.039

0.024

0.016

(A )

L

p

L

0.25 0.1

0.25

0.01

0.01 0.004

A

3

θ

0.7

0.3

0.028

0.012

o

8

o

0

OUTLINE
VERSION

SOT109-2 076E07 MS-012

IEC JEDEC EIAJ

REFERENCES

2001 Apr 25 15

EUROPEAN

PROJECTION

ISSUE DATE

97-05-22
99-12-27

Philips Semiconductors Product specification

Zero-voltage-switching
resonant converter controller

SOLDERING
Introduction

Thistextgivesaverybriefinsighttoa complex technology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).
There is no soldering method that is ideal for all IC

packages. Wave soldering is often preferred when
through-holeandsurface mount components are mixed on
one printed-circuit board. Wave soldering can still be used
for certain surface mount ICs, but it is not suitable for fine
pitch SMDs. In these situations reflow soldering is
recommended.

Through-hole mount packages

SOLDERING BY DIPPING OR BY SOLDER WAVE
The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

MANUAL SOLDERING
Apply the soldering iron (24 V or less) to the lead(s) of the

package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400 °C, contact may be up to 5 seconds.

Surface mount packages

REFLOW SOLDERING
Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied
totheprinted-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.

stg(max)

). If the

TEA1610P; TEA1610T

Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 220 °C for
thick/large packages, and below 235 °C for small/thin
packages.

WAVE SOLDERING
Conventional single wave soldering is not recommended

forsurfacemountdevices(SMDs)orprinted-circuitboards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

If wave soldering is used the following conditions must be
observed for optimal results:

• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

• Forpackageswithleadsonfoursides,thefootprintmust
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

MANUAL SOLDERING
Fix the component by first soldering two

diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C. When using a dedicated tool, all other leads can
be soldered in one operation within 2 to 5 seconds
between 270 and 320 °C.

2001 Apr 25 16

Philips Semiconductors Product specification

Zero-voltage-switching

TEA1610P; TEA1610T

resonant converter controller

Suitability of IC packages for wave, reflow and dipping soldering methods

MOUNTING PACKAGE

Through-hole mount DBS, DIP, HDIP, SDIP, SIL suitable
Surface mount BGA, HBGA, LFBGA, SQFP, TFBGA not suitable suitable −

HBCC, HLQFP, HSQFP, HSOP, HTQFP,
HTSSOP, HVQFN, SMS

(4)

PLCC
LQFP, QFP, TQFP not recommended
SSOP, TSSOP, VSO not recommended

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

2. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

3. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.

5. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

, SO, SOJ suitable suitable −

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

not suitable

SOLDERING METHOD

WAVE REFLOW

(2)

(3)

− suitable

suitable −

(4)(5)

suitable −

(6)

suitable −

(1)

DIPPING

.

2001 Apr 25 17

Philips Semiconductors Product specification

Zero-voltage-switching

TEA1610P; TEA1610T

resonant converter controller

DATA SHEET STATUS

PRODUCT

DATA SHEET STATUS

Objective data Development This data sheet contains data from the objective specification for product

Preliminary data Qualification This data sheet contains data from the preliminary specification.

Product data Production This data sheet contains data from the product specification. Philips

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

(1)

STATUS

(2)

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.

DEFINITIONS

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarranty that such applications will be
suitable for the specified use without further testing or
modification.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingor selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseofanyoftheseproducts,conveysnolicenceortitle
under any patent, copyright, or mask work right to these
products,andmakes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

2001 Apr 25 18

Philips Semiconductors Product specification

Zero-voltage-switching
resonant converter controller

TEA1610P; TEA1610T

NOTES

2001 Apr 25 19

Philips Semiconductors – a w orldwide compan y

Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: seeSouth America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone], Fax. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
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254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
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Indonesia: PT PhilipsDevelopment Corporation,Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
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Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
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Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. [phone], Fax [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

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Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

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60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone], Fax. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. [phone]

© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

2001

Internet: http://www.semiconductors.philips.com

72

Printed in The Netherlands 613502/01/pp20 Date of release: 2001 Apr 25 Document order number: 9397750 07993