Datasheet TEA1507P Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TEA1507

GreenChipII SMPS control IC

Preliminary specification
File under Integrated Circuits, IC11

2000 Dec 05

Philips Semiconductors Preliminary specification

GreenChipII SMPS control IC TEA1507

FEATURES
Distinctive features

• Universal mains supply operation (70 to 276 V AC)

• High level of integration, giving a very low external

component count.

Green features

• Valley/zero voltage switching for minimum switching
losses

• Efficient quasi-resonant operation at high power levels

• Frequency reductionat low power standby for improved

system efficiency (<3 W)

• Burst mode operation for very low standby levels(<1 W)

• On-chip start-up current source.

handbook, halfpage

1

2

TEA1507

3

4

8

7

6

5

Protection features

• Safe restart mode for system fault conditions

• Continuous mode protection by means of

demagnetization detection (zero switch-on current)

• Accurate and adjustable overvoltage protection

• Short winding protection

• Undervoltage protection (foldback during overload)

• Overtemperature protection

• Low and adjustable overcurrent protection trip level

• Soft (re)start

• Mains voltage-dependent operation-enabling level.

APPLICATIONS

Besides typical application areas, i.e. TV and Monitor
supplies, the device can be used in all applications that
demand an efficient and cost-effective solution up to
250 W.

MGU229

Fig.1 Typical application.

2000 Dec 05 2

Philips Semiconductors Preliminary specification

GreenChipII SMPS control IC TEA1507

GENERAL DESCRIPTION

The GreenChipII is the second generation of green
Switched Mode Power Supply (SMPS) controller ICs
operatingdirectly from the rectified universalmains.A high
level of integration leads to a cost effective power supply
with a very low number of external components.

The special built-in green functions allow the efficiency to
be optimum at all power levels. This holds for
quasi-resonant operation at high power levels, as well as
fixed frequency operation with valley switching at medium
power levels. At low power (standby) levels, the system
operates at reduced frequency and with valley detection.

ORDERING INFORMATION

TYPE

NUMBER

TEA1507P DIP8 plastic dual in-line package; 8 leads (300 mil) SOT97-1

NAME DESCRIPTION VERSION

If burst modeoperation is applied,the standby powerlevel
can even be reduced to below 1 W.

The proprietary high voltage BCD800 process makes
direct start-up possible from the rectified mains voltage in
an effective and green way. A second low voltage
BICMOS IC is used for accurate, high speed protection
functions and control.

Highly efficient, reliable supplies can easily be designed
using the GreenChipII controller.

PACKAGE

2000 Dec 05 3

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2000 Dec 05 4

ndbook, full pagewidth

BLOCK DIAGRAM

Philips Semiconductors Preliminary specification

GreenChipII SMPS control IC TEA1507

V

CC

GND

CTRL

1

S1

2

3

2.5 V

M-level

−1

burst
detect

TEA1507

SUPPLY

MANAGEMENT

internal

FREQUENCY

UVLO start

supply

VOLTAGE

CONTROLLED

OSCILLATOR

CONTROL

OVER-

TEMPERATURE

PROTECTION

POWER-ON

RESET

MAXIMUM

ON-TIME

PROTECTION

UVLO

LOGIC

LOGIC

SQ

R

START-UP

CURRENT SOURCE

VALLEY

Q

100 mV

short

winding

OVER-

VOLTAGE

PROTECTION

DRIVER

LEB

blank

OCP

0.75 V

clamp

I

soft

start

S2

OVERPOWER
PROTECTION

8

DRAIN

HVS

7

n.c.

4

DEM

6

DRIVER

ss

0.5 V

5

I

sense

Fig.2 Block diagram.

MGU230

Philips Semiconductors Preliminary specification

GreenChipII SMPS control IC TEA1507

PINNING

SYMBOL PIN DESCRIPTION

V

CC

GND 2 ground
CTRL 3 control input
DEM 4 input from auxiliary winding for

I

sense

DRIVER 6 gate driver output
HVS 7 high voltage safety spacer, not

DRAIN 8 drain of external MOS switch, input for

1 supply voltage

demagnetization timing, OVP and OPP

5 programmable current sense input

connected

start-up current and valley sensing

handbook, halfpage

1

V

CC

2

GND

CTRL

DEM

3
4

TEA1507

MGU231

Fig.3 Pin configuration.

8
7
6
5

DRAIN
HVS
DRIVER
I

sense

FUNCTIONAL DESCRIPTION

The TEA1507 is the controller of a compact flyback
converter, with the IC situated at the primary side. An
auxiliary winding of the transformer provides
demagnetization detection and powers the IC after
start-up.

The TEA1507 operates in multi modes.
The next converter stroke is started only after

demagnetization of the transformer current (zero current
switching), while the drain voltage has reached the lowest
voltage to prevent switching losses (green function). The
primary resonant circuit of primary inductance and drain
capacitor ensures this quasi-resonant operation. The
design can be optimized in such a way that zero voltage
switching can be reached over almostthe universal mains
range.

To prevent very high frequency operation at lower loads,
the quasi-resonant operation changes smoothly in fixed
frequency PWM control.

At very low power (standby) levels, the frequency is
controlled down, via the VCO, to a minimum frequency of
about 6 kHz. Typically, 3 Watts can be achieved for a
75 W converter with an output power of 100 mW.

continue charging capacitor C

(switch S1 will be

VCC

opened), see Fig.2. The IC will activate the power
converter as soon as the voltage on pin VCC passes the
V

CC(start)

level. The IC supply is taken over by the auxiliary
windingas soon astheoutput voltage reachesitsintended
level and the IC supply from the mains voltage is
subsequently stopped for high efficiency operation (green
function).

The moment the voltage on pin VCC drops below the
V

(undervoltage lock out)level, the ICstops switching

UVLO

and enters a safe restart from the rectified mains voltage.
Inhibiting the auxiliary supply by external means causes
the converter to operate in a stable, well-defined burst
mode.

Supply management

All (internal) reference voltages are derived from a
temperature compensated, on-chip band gap circuit.

handbook, halfpage

175 kHz

f

VCO fixed quasi resonant

MGU232

Start-up, mains enabling operation level and
undervoltage lock out (see Figs. 10 and 11)

Initially, the IC is self supplying from the rectified mains
voltage via pin DRAIN. Supply capacitor C

is charged

VCC

by the internal start-up current source to a level of about
4 V or higher, depending on the drain voltage. Once the
drain voltage exceeds the M-level (mains-dependent
operation-enabling level), the start-up current source will

2000 Dec 05 5

6 kHz

power

Fig.4 Multi mode operation.

Philips Semiconductors Preliminary specification

GreenChipII SMPS control IC TEA1507

Current mode control

Current mode control is used for its good line regulation
behaviour.

The ‘on-time’ iscontrolled by theinternally inverted control
pin voltage, which is compared with the primary current
information. The primary current is sensed across an
external resistor. The driver output is latched in the logic,
preventing multiple switch-on.

The internal control voltage is inverselyproportional to the
external control pin voltage, with an offset of 1.5 V. This
means that a voltage range from 1 to 1.5 V on pin CTRL
will result in an internal control voltage range from

0.5 to 0 V(the maximum externalcontrol voltage resultsin
a minimum duty cycle).

Oscillator

The maximum fixed frequency of the oscillator isset by an
internal current source and capacitor. The maximum
frequency is reduced once the control voltage enters the
VCO control window. Then, the maximum frequency
changeslinearly with thecontrol voltage untilthe minimum
frequency is reached (see Figs 5 and 6).

Valley switching (see Fig.7)
A new cycle starts when the power switch is switched on.

After the ‘on-time’ (which is determined by the ‘sense’
voltage and the internal control voltage), the switch is
opened and the secondary stroke starts. After the
secondary stroke, the drain voltage shows an oscillation

with a frequency of approximately

where L

is the primary self inductance of the transformer

p

---------------------------------------------------­2 π× L

1

×()×()

pCd

and Cd is the capacitance on the drain node.

As soon as the oscillator voltage is high again and the
secondary stroke has ended, the circuit waits for the
lowest drain voltage before starting a new primary stroke.
This method is called valley detection. Figure 7 shows the
drain voltage together with the valley signal, the signal
indicating the secondary stroke and the oscillator signal.

In an optimum design, the reflected secondary voltage on
the primary side will force the drain voltage to zero. Thus,
zero voltage switching is very possible, preventing large

1

capacitive switching losses , and



P

-- -



2

2

CV

× f××=

allowing high frequency operation, which results in small
and cost effective inductors.

Demagnetization

The system will be in discontinuous conduction mode all
the time. The oscillator will not start a new primary stroke
until the secondary stroke has ended.

Demagnetization features a cycle-by-cycle output
short-circuit protection by immediately lowering the
frequency (longer off-time), thereby reducing the power
level.

Demagnetizationrecognition is suppressedduringthe first
t

time. This suppression may be necessary in

suppr

applications where the transformer has a large leakage
inductance and at low output voltages/start-up.

Minimum and maximum ‘on-time’

The minimum ‘on-time’ of the SMPS is determined by the
Leading Edge Blanking (LEB) time. The IC limits the
‘on-time’ to 50 µs. When the system desires an ‘on-time’
longer than 50 µs, a fault condition is assumed (e.g.
removed Ci), the IC will stop switching and enter the safe
restart mode.

V

handbook, halfpage

sense(max)

Fig.5 The V

0.5 V

1 V

(typ)

sense(max)

1.5 V
(typ)

voltage as function of V

MGU233

V

CTRL

CTRL

.

2000 Dec 05 6

6 kHz

f

50 mV

(typ)

75 mV

V

(typ)

handbook, halfpage

Fig.6 The VCO frequency as function of V

MGU234

175 kHz

sense(max)

sense(max)

Philips Semiconductors Preliminary specification

GreenChipII SMPS control IC TEA1507

handbook, full pagewidth

drain

valley

secondary

stroke

oscillator

primary

stroke

secondary

stroke

secondary

ringing

BA

MGU235

A: Start of new cycle at lowest drain voltage.
B: Start of new cycle in a classical PWM system at high drain voltage.

Fig.7 Signals for valley switching.

2000 Dec 05 7

Philips Semiconductors Preliminary specification

GreenChipII SMPS control IC TEA1507

OverVoltage Protection (OVP)

An OVP mode is implemented in the GreenChip series.
For the TEA1507, this works by sensing the auxiliary
voltage via the current flowing into pin DEM during the
secondary stroke. The auxiliary winding voltage is a
well-defined replica of the output voltage. Any voltage
spikes are averaged by an internal filter.

If the output voltage exceeds the OVP trip level, the OVP
circuit switches the power MOSFET off. Next, the
controllerwaits until the UVLOlevel is reached onpin VCC.
This is followed by a safe restart cycle, after which
switching starts again.This process isrepeated as long as
the OVP condition exists.

Theoutput voltage atwhichthe OVP functiontrips,V
can be set by the demagnetization resistor, R

N

V

o OVP()

Where N

s

----------­N

is the number of secondary turnsand N

s

I

(OVP)(DEM)RDEMVclamp DEM()pos()

aux

+×()×=

DEM

:

aux

o(OVP)

is the

number of auxiliary turns of the transformer.
Current I
The value of the demagnetization resistor (R

is internally trimmed.

ref

DEM

) can be
adjusted to the turns ratio of the transformer, thus making
an accurate OVP possible.

OverCurrent Protection (OCP)

MGU236

handbook, halfpage

−100 µA
(typ)

I

DEM

−24 µA
(typ)

V

sense(max)

0.50 V
(typ)

0.3 V
(typ)

Fig.8 OPP correction curve.

Short winding protection

After the leading edge blanking time, the short winding
protection circuit is also activated. If the ‘sense’ voltage
exceeds the short winding protection voltage V

swp

, the
converter will stop switching. Once VCC drops below the
UVLO level, capacitor C

will be recharged and the

VCC

supply will restart again. This cycle will be repeated until
the short circuit is removed (safe restart mode).

The short winding protection will also protect in case of a
secondary diode short circuit.

The cycle-by-cycle peak drain current limit circuit uses the
externalsource resistor to measurethecurrent accurately.
This allows optimum size determination of the transformer
core (cost issue). The circuit is activated after the leading
edge blanking time, t

. The OCP protection circuit limits

leb

the ‘sense’ voltage to an internal level.

OverPower Protection (OPP)

Duringthe primary stroke,the rectified mainsinput voltage
is measured by sensing the current drawn from pin DEM.
This current is dependent on the mains voltage, according

to the following formula:

N

aux

N

Where:

=

-----------­N

p

V

I

DEM()

aux

≈≈

-------------- ­R

DEM

×

NV

mains

-------------------------­R

DEM

The current information is used to adjust the peak drain
current, which is measured via pin I

. The internal

sense

compensation is such that an almost mains independent
maximum output power can be realized.

The OPP curve is given in Fig.8.

Overtemperature protection

An accurate temperature protection is provided in the
circuit. When the junction temperature exceeds the
thermal shutdown temperature, the IC will stop switching.
When VCC drops to UVLO, capacitor C
recharged to the V

level. If the temperature is still too

start

VCC

will be

high, VCC will drop again to the UVLO level, etc. (safe
restart mode).

Operation recommences when the junction temperature
drops 8 degrees typically.

2000 Dec 05 8

Philips Semiconductors Preliminary specification

GreenChipII SMPS control IC TEA1507

Burst mode standby

Pin CTRL (pin 3)is also used to implementtheburst mode
standby. In burst mode standby, the power supply enters
aspecial low dissipation state,where it typically consumes
less than 1 W of input power (Po< 100 mW), but is still
able to supply a microprocessor, for example. Figure 12
shows a flyback converter using the burst mode standby
function. The system enters burst mode standby when the
microprocessor closes switches S2 and S3 on the
secondary side. Switch S2 connects the high voltage
output secondary winding to the low voltage
microprocessor capacitor (CµC), bypassing Co.

When the voltage on CµC exceeds the Zener voltage, the
opto-coupler is activated, sending a largecurrent signal to
CTRL. In response to this signal, the IC stops switching
and enters a ‘hiccup’ mode. This burst activation signal
should be present for longer than the ‘burst blank’ period
(typically 30 µs): the blanking time prevents false burst
triggering due to spikes. Figure 11 shows the burst-mode
standby signals. The hiccup mode during burst mode
standby operation does not differ from the hiccup mode in
safe-restart mode during a system fault condition (e.g.
OVP or output short circuit). The power is reduced
during soft-restart mode.

Burst mode standby operation continues until the
microcontroller opens switches S2 and S3. The system
then enters the start-up sequence and begins normal
switching behaviour.

V

th

I

I

burstmode

---------------- ­R

CTRL

+=

th on()

(For burst mode specification, see Figs 11 and 12.)

Soft start-up (pin I

sense

)

To prevent transformer rattle during hiccup, the
transformer peak current is slowly increased by the soft
start function. This can be achieved by inserting a resistor
and a capacitor between pin I

(pin 5) and the sense

sense

resistor. An internal current source charges the capacitor
to V = Iss× Rss, with a maximum of about 0.5 V.

The start level and the time constant of the increasing
primary current level can be adjusted externally by
changing the values of Rss and Css.

V

ocpIssRss

×=

ssCss

=

------------------------------------------- -

I

primary(max)

τ R

The charging current I
pin I
pin I

is below approximately 0.5 V. If the voltage on

sense

exceeds the 0.5 V, the soft start current source

sense

willstart limiting the currentIss.At the V

×()–

R

sense

will flow as long as the voltage on

ss

CC(start)

level,the I

current source is completely switched off (see Fig.9).
Since the soft start current Iss is subtracted from pin V

CC

charging current, theRssvalue will affectthe VCCcharging
current level by a maximum of 60 µA (typical value).

handbook, halfpage

0.5 V

I

SS

start-up

pin 5

I

sense

V

ocp

R

SS

C

SS

R

sense

MGU237

Fig.9 Soft start-up.

Driver

The driver circuit to the gate of the power MOSFET has a
current sourcing capability of typically 125 mA and a
current sink capability of typical 540 mA. This permits fast
turn-on and turn-off of the power MOSFET for efficient
operation.

A low driver source current has been chosen to limit the
∆V/∆t at switch-on. This reduces Electro Magnetic
Interference (EMI) and also limits the current spikes
across R

sense

.

ss

2000 Dec 05 9

Philips Semiconductors Preliminary specification

GreenChipII SMPS control IC TEA1507

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages are measured with respect to
ground (pin 2); positive currents flow into the chip; pin 1 may not be current driven. The voltage ratings are valid
provided other ratings are not violated; current ratings are valid provided the maximum power rating is not violated.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Voltages

V

1

V

3

V

4

V

5

V

8

Currents

I

3

I

4

I

5

I

6

I

8

General

P

tot

T

stg

T

vj

ESD

V

ESD

pin 1 (VCC) continuous −0.4 +20 V
pin 3 (CTRL) −0.4 +5 V
pin 4 (DEM) current limited −0.4 − V
pin 5 (I

) current limited −0.4 − V

sense

pin 8 (DRAIN) −0.4 +650 V

pin 3 (CTRL) d < 10% − +50 mA
pin 4 (DEM) −250 +250 µA
pin 5 (I

) −1 +10 mA

sense

pin 6 (DRIVER) d < 10% −0.8 +2 A
pin 8 (DRAIN) − +5 mA

total power dissipation T

<55°C − 1.0 W

amb

storage temperature −55 +150 °C
virtual junction temperature −20 +145 °C

electrostatic discharge voltage class 1

human body model pins 1 to 6; note 1 − 1750 V

pin 8 (DRAIN); note 1 − 1000 V

machine model note 2 − 200 V

Notes

1. Equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor.

2. Equivalent to discharging a 200 pF capacitor through a 0.75 µH coil and a 10 Ω resistor.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

thermal resistance from junction to ambient in free air; note 1 100 K/W

Note

1. With pin GND connected to sufficient copper area on the printed-circuit board.

QUALITY SPECIFICATION

In accordance with ‘SNW-FQ-611-E’.

2000 Dec 05 10

Philips Semiconductors Preliminary specification

GreenChipII SMPS control IC TEA1507

CHARACTERISTICS

T

=25°C; VCC= 15 V; all voltages are measured with respect to ground (pin 2); currents are positive when flowing

amb

into the IC; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Start-up current source (pin 8)

I

i(DRAIN)

BV

DSS

M-level mains-dependent operation-enablinglevel 60 − 100 V

V

management (pin 1)

CC

V

CC(start)

V

CC(UVLO)

V

CC(hys)

I

i(VCC)H

I

i(VCC)L

I

VCC(restart)

I

CC(operate)

Demagnetization management (pin 4)

V

DEM

I

DEM

V

clamp(DEM)(neg)

V

clamp(DEM)(pos)

t

suppr

Pulse width modulator

t

on(min)

t

on(max)

Oscillator

f

oscL

f

oscH

V

vco(start)

V

vco(max)

Duty cycle control (pin 3)

V

CTRL(min)

V

CTRL(max)

supply current drawn from drain pin VCC=0V; V

with auxiliary supply;
V

DRAIN

> 100 V

> 100 V 1.0 1.2 1.4 mA

DRAIN

− 100 300 µA

breakdown voltage 650 −−V

start-up voltage on V
under voltage lock-out on V
hysteresis voltage on V

CC

CC

CC

pin VCC charging current V
pin VCC charging current V

pin VCC restart current V

V

CC(start)
DRAIN
DRAIN

− V

CC(UVLO)

> 100 V; VCC<3V −1.2 −1 −0.8 mA
> 100 V;

3V<VCC<V

> 100 V;

DRAIN

V

CC(UVLO)<VCC

CC(UVLO)

<V

CC(start)

10.3 11 11.7 V

8.1 8.7 9.3 V

2.0 2.3 2.6 V

−1.2 −0.75 −0.45 mA

−650 −550 −450 µA

supply current under normal operation no load on pin DRIVER 1.1 1.3 1.5 mA

demagnetization comparator threshold

50 100 150 mV

voltage on pin DEM
pin DEM current V
negative clamp voltage on pin DEM at I
positive clamp voltage on pin DEM at I
suppression of transformerringing atstart

=50mV −50

DEM

= −150 µA −0.5 −0.25 −0.05 V

DEM

= 250 µA 0.5 0.7 0.9 V

DEM

(1)

− 0nA

1.1 1.5 1.9 µs

of secondary stroke

minimum on-time − t

leb

− ns

maximum on-time latched 40 50 60 µs

oscillator low frequency (fixed frequency) V
oscillator high frequency (fixed frequency) V
peak voltage at pin I

sense

, where

> 1.5 V 5 6.5 8 kHz

CTRL

< 1 V 145 175 205 kHz

CTRL

see Fig.6 − 75 − mV

frequency reduction starts
peak voltage at pin I

frequency is equal to f

, where the

sense

oscL

− 50 − mV

min. voltage on CTRL (max. duty cycle) − 1.0 − V
max. voltage on CTRL (min. duty cycle) − 1.5 − V

2000 Dec 05 11

Philips Semiconductors Preliminary specification

GreenChipII SMPS control IC TEA1507

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Burst mode standby (pin 3)

V

th(burst)(on)

burst mode standby active threshold
voltage

I

th(burst)(on)

I

th(burst)(off)

t

(burst-blank)

burst mode standby active current 16 −−mA
burst mode standby inactive current −−6mA
burst mode standby blanking time 25 30 35 µs

Valley switch (pin 8)

∆V/∆t

valley

t

valley-swon

∆V/∆t for valley recognition −85 −+85 V/µs
delay from valley recognition to switch-on − 150

Current and short winding protection (pin 5)

V

sense(max)

t

propagation

maximum source voltage OCP ∆V/∆t = 0.1 V/µs 0.48 0.52 0.56 V
delay from detecting V

sense(max)

switch-off

V

swp

t

leb

short winding protection voltage 0.83 0.88 0.96 V
blanking time for current and short

winding protection

I

ss

soft start current V

Overvoltage protection (pin 4)

I

(OVP)(DEM)

OVP protection level at pin 4, set by the
demagnetization resistor R

DEM

Section “OverVoltage Protection (OVP)”

Overpower protection (pin 4)

I

(OPP)(DEM)

OPP current at pin 4, start of OPP
correction. Set by the demagnetization
resistor R

; see Section “OverPower

DEM

Protection (OPP)”

I

(OPP50%)(DEM)

OPP current at pin 4 where maximum
source voltage is limited to 0.3 V

Driver (pin 6)

I

source

I

sink

V

o(driver)(max)

source current capability of driver VCC= 9.5 V; V
sink current capability of driver VCC= 9.5 V; V

maximum output voltage of the driver VCC>12V − 11.5 12 V

Temperature protection

T

prot(max)

T

prot(hyst)

maximum temperature threshold 130 140 150 °C
hysteresis temperature − 8

Note

1. Guaranteed by design.

to

; see

at I

= 6 mA 3.3 3.8 4.3 V

burst

(1)

− ns

∆V/∆t = 0.5 V/µs − 140 185 ns

300 370 440 ns

<0.5V 456075µA

sense

54 60 66 µA

−−24 −µA

−−100 −µA

=2V −−170 −88 mA

DRIVER

=2V − 300 − mA

DRIVER

V

CC

V

DRIVER

= 9.5 V;

= 9.5 V

400 700 − mA

(1)

−°C

2000 Dec 05 12

Philips Semiconductors Preliminary specification

GreenChipII SMPS control IC TEA1507

APPLICATION INFORMATION

A converter with the TEA1507 consists of an input filter, a
transformer with a third winding (auxiliary), and an output
stage with a feedback circuit.

Capacitor C

(at pin 1) buffers the supply voltage of the

VCC

IC, which is powered via the high voltage rectified mains

V

handbook, full pagewidth

mains

C

C

R

VCC

CTRL

CTRL

V

CC

GND

CTRL

DEM

1

2

TEA1507

3

4

R

DEM

C

i

8

7

6

5

during start-up and via the auxiliary winding during
operation.

A sense resistor converts the primary current into a
voltageat pin I

(pin 5).The value of thissenseresistor

sense

defines the maximum primary peak current.
An application note is available: AN00047.

V

o

N

N

p

s

C

DRAIN

HVS

DRIVER

I

sense

n.c.

power
MOSFET

R

sense

o

Fig.10 Flyback configuration with secondary sensing.

2000 Dec 05 13

N

aux

MGU238

Philips Semiconductors Preliminary specification

GreenChipII SMPS control IC TEA1507

handbook, full pagewidth

V

i

V

D

(power

MOSFET)

V

V

CC

V

gate

M-level

burst mode

V

i

o

V

µC

start-up

sequence

normal

operation

overvoltage

protection

Fig.11 Typical waveforms.

2000 Dec 05 14

output short

circuit

burst mode standby

normal

operation

MGU239

Philips Semiconductors Preliminary specification

GreenChipII SMPS control IC TEA1507

handbook, full pagewidth

V

mains

C

C

R

VCC

CTRL

CTRL

V

CC

GND

CTRL

DEM

1

2

TEA1507

3

4

R

DEM

V

o

C

i

S2

8

7

6

5

DRAIN

HVS

DRIVER

I

sense

n.c.

power
MOSFET

R

SS

R

C

SS

sense

C

µC

C

o

microcontroller
supply

S3

burst mode

standby on/off

from microcontroller

MGU240

Fig.12 Flyback configuration with secondary sensing using the burst mode standby.

2000 Dec 05 15

Philips Semiconductors Preliminary specification

GreenChipII SMPS control IC TEA1507

PACKAGE OUTLINE

DIP8: plastic dual in-line package; 8 leads (300 mil)

SOT97-1

seating plane

L

Z

8

pin 1 index

1

D

A

2

A

A

1

w M

b

e

b

1

b

2

5

E

4

M

E

c

(e )

1

M

H

0 5 10 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A

A

A

UNIT

max.

mm

inches

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

OUTLINE

VERSION

SOT97-1

12

min.

max.

1.73

1.14

0.068

0.045

IEC JEDEC EIAJ

050G01 MO-001 SC-504-8

b

b

0.53

0.38

0.021

0.015

1

1.07

0.89

0.042

0.035

b

2

REFERENCES

cD E e M

0.36

0.23

0.014

0.009

9.8

9.2

0.39

0.36

2000 Dec 05 16

(1) (1)

6.48

6.20

0.26

0.24

L

e

1

M

3.60

8.25

3.05

7.80

0.14

0.32

0.12

0.31

EUROPEAN

PROJECTION

E

10.0

0.39

0.33

H

8.3

w

max.

0.2542.54 7.62

ISSUE DATE

0.010.10 0.30

95-02-04
99-12-27

1.154.2 0.51 3.2

0.0450.17 0.020 0.13

(1)

Z

Philips Semiconductors Preliminary specification

GreenChipII SMPS control IC TEA1507

SOLDERING
Introduction to soldering through-hole mount

packages

This text gives a brief insight to wave, dip and manual
soldering.A more in-depth accountofsoldering ICs can be
found in our

Packages”

Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit
board.

Soldering by dipping or by solder wave

The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds.

Suitability of through-hole mount IC packages for dipping and wave soldering methods

DBS, DIP, HDIP, SDIP, SIL suitable suitable

Note

1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

“Data Handbook IC26; Integrated Circuit

(document order number 9398 652 90011).

PACKAGE

Thetotalcontact time of successive solderwavesmustnot
exceed 5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

Manual soldering

Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400 °C, contact may be up to 5 seconds.

SOLDERING METHOD

DIPPING WAVE

(1)

stg(max)

). If the

2000 Dec 05 17

Philips Semiconductors Preliminary specification

GreenChipII SMPS control IC TEA1507

DATA SHEET STATUS

DATA SHEET STATUS

Objective specification Development This data sheet contains the design target or goal specifications for

Preliminary specification Qualification This data sheet contains preliminarydata, and supplementary data will be

Product specification Production This data sheet contains final specifications. Philips Semiconductors

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese or at anyother conditionsabovethose given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarranty that such applications willbe
suitable for the specified use without further testing or
modification.

PRODUCT

STATUS

DEFINITIONS

product development. Specification may change in any manner without
notice.

published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.

reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result inpersonal injury. Philips
Semiconductorscustomersusingor selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseof any of these products,conveysnolicence or title
under any patent, copyright, or mask work right to these
products,and makes no representationsorwarranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

(1)

2000 Dec 05 18

Philips Semiconductors Preliminary specification

GreenChipII SMPS control IC TEA1507

NOTES

2000 Dec 05 19

Philips Semiconductors – a w orldwide compan y

Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone], Fax. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]

Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: PT Philips DevelopmentCorporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. [phone] ext. 2501, Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. [phone], Fax. [phone]

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. [phone], Fax [phone]

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. [phone], Fax [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. [phone], Fax. [phone]

South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone] Fax. [phone]

Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone], Fax. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. [phone]

© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

2000

Internet: http://www.semiconductors.philips.com

70

Printed in The Netherlands 613502/01/pp20 Date of release: 2000 Dec 05 Document order number: 9397 750 07298