Datasheet TEA1566 Datasheet (Philips)

Page 1
查询TEA1566供应商
INTEGRATED CIRCUITS
DATA SH EET
TEA1566
GreenChip; SMPS module
Preliminary specification File under Integrated Circuits, IC11
1999 Apr 20
Page 2
Philips Semiconductors Preliminary specification
GreenChip; SMPS module TEA1566
FEATURES Distinctive features
High level of integration results in 20 to 50 fewer components compared to a power supply with discrete components
On-chip 600 V MOSFET
On/off function replaces expensive mains switch with
functional switch
Direct off-line operation (90 to 276 VAC)
On-chip 5% accurate oscillator.
Green features
Low power consumption in off-mode (<100 mW)
On-chip efficient start-up current source giving fast
start-up
Burst mode stand-by (<2 W) for overall improved system efficiency
Low power operation mode with lower frequency to reduce switching losses.
Protection features
APPLICATIONS
mains
TEA1566
9
8
7
6
5
4
3
2
1
output
Vin
NC
OOB
Dem
Gnd
Vctrl
Iref
Vaux
Isense
Demagnetization protection
Cycle by cycle current limitation with programmable
current trip level
Over voltage protection
Over temperature protection
Safe-restart mode with reduced power for system fault
conditions.
Highly versatile
Usable in Buck and flyback topology
Interfaces both primary and secondary side feedback.
MGR691
Fig.1 Typical flyback application.
GENERAL DESCRIPTION
The GreenChip, intended for off-line 90 to 276 VAC power supply applications, is a monolithic high voltage family of ICs that combines analog and digital circuits to implement all necessary control functions for a switched mode power supply. The functions include integrated high voltage start-up current source, voltage mode PWM control, 5% accurate trimmed oscillator, band gap derived reference voltages, comprehensive fault protection, and leading edge blanking. High level of integration leads to cost effective power supplies that are compact, weigh less, and at the same time give higher efficiency, are more reliable and simple to design. Efficient green features lead to very low power operation modes and a novel on/off function helps replace the expensive mains switch with a low cost functional switch.
Page 3
Philips Semiconductors Preliminary specification
GreenChip; SMPS module TEA1566
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
TEA1566S SIL9P plastic single in-line power package; 9 leads SOT131-2 TEA1566J DBS9P plastic DIL-bent-SIL power package; 9 leads (lead length12 mm) SOT157-2
BLOCK DIAGRAM
handbook, full pagewidth
OOB
Vaux
VAUX
ON/OFF
1 k
7
MANAGEMENT
CURRENT SOURCE
START-UP
TEA1566
VinIref
923
Vctrl
Dem
4
6
5.5 V
SAMPLE
AND
HOLD1
DEMAGNETIZATION
NEGATIVE
CLAMP
burst mode stand-by
TEMPERATURE
MANAGEMENT
OVER
PROTECTION
SAMPLE
AND
HOLD2
amplifier
OSCILLATOR
Fig.2 Block diagram.
error
5
Gnd
PWM
comparator
R
Q
S
OVER CURRENT
PROTECTION
LEADING EDGE
BLANKING
FREQUENCY
CONTROL
81
NC
driver stage
power
MOSFET
6
MGR692
Isense
Page 4
Philips Semiconductors Preliminary specification
GreenChip; SMPS module TEA1566
PINNING
SYMBOL PIN DESCRIPTION
Isense 1 programmable current sense
resistor Vaux 2 IC supply capacitor Iref 3 reference resistor for setting
internal reference currents Vctrl 4 feedback voltage for duty cycle
control Gnd 5 ground Dem 6 demagnetization input signal from
primary side auxiliary winding OOB 7 on/off/burst mode input signal NC 8 not connected Vin 9 MOSFET drain connection
handbook, halfpage
Isense
Vaux
Iref
Vctrl
Gnd
Dem
OOB
NC Vin
1 2 3 4 5 6 7 8 9
TEA1566
MGR693
Fig.3 Pin configuration.
FUNCTIONAL DESCRIPTION
The GreenChip family of ICs are highly integrated, with most common PWM functions like error amplifier, oscillator, bias current generator, and band gap based reference voltage circuits fully integrated in the ICs. High level of integration leads to easy and cost effective design of power supplies.The ICs have been fabricated in a Philips proprietary high voltage BCDMOS process that enables devices of up to 720 V to be fabricated on the same chip with low voltage circuitry.
An efficient on-chip start-up circuit enables fast start-up and dissipates negligible power after start up. On-chip accurate oscillator generates a saw tooth waveform which is used by the voltage mode feedback control circuitry to generate a pulse width modulated signal for driving the gate of the power MOSFET. A novel regulation scheme is used to implement both primary and secondary side regulation to minimize external component count. Protection features like over voltage, over current, over temperature, and demagnetization protection, give comprehensive safety against system fault conditions. The GreenChip offers some advanced features that greatly enhance the efficiency of the overall system. Off-mode reduces the power consumption of the IC below 100 mW. Burst mode stand-by reduces the power consumption of the system to below 2 W. Low power operation mode reduces the operating frequency of the system, when the system is working under low load conditions, to reduce the switching losses.
Start-up current source and Vaux management
A versatile on-chip start-up current source makes an external, highly dissipating, trickle-charge circuit unnecessary. See Fig.2 for the block diagram of the IC.
The start-up current source derives power from the mains via pin Vin (drain). It supplies current (see symbols ‘Istart-low’ and ‘Istart-high’ of Chapter “Characteristics”) to charge the Vaux (IC supply) capacitor and at the same time provides current to the control circuitry of the IC. Once the Vaux capacitor is charged to its start-up voltage level (11 V), the on-chip oscillator starts oscillating and the IC starts switching the power MOSFET. Power is then supplied to the load capacitor via the secondary winding.
Figure 1 shows a typical flyback application diagram. The Vaux capacitor is also supplied by an auxiliary winding on the primary side. This winding is coupled to the secondary side winding supplying the output capacitor. As the output capacitor voltage increases and approaches its nominal value, the re-supply of the Vaux capacitor is done by the auxiliary winding. Figure 4 shows relevant waveforms at start-up. For successful take over of supply of Vaux capacitor by the auxiliary winding, it is important that the re-supply of Vaux capacitor starts before its voltage drops to its Under Voltage Lockout (UVLO) level of
8.05 V of the system and stops delivering power to the output.
Page 5
Philips Semiconductors Preliminary specification
GreenChip; SMPS module TEA1566
In case of output short circuit, the Vaux capacitor is no longer supplied by the auxiliary winding and its voltage drops till it reaches the UVLO level. If the output is an open circuit, the output voltage will rise till it reaches the Over Voltage Protection (OVP) level. The IC will detect this state and stop switching.
In absence of switching of the power device, the Vaux capacitor will not be re-supplied and its voltage will drop till it reaches UVLO level. Once the Vaux voltage drops to UVLO level, the start-up current source is re-activated and it charges the Vaux capacitor to its start level and the system goes through a cycle similar to the start-up cycle.
Figure 5 shows the relevant waveforms during safe-restart mode. The charging current (see symbol ‘Irestart-prot’ in Chapter “Characteristics”) from the start-up circuit during the safe-restart mode is lower than the normal start-up current (see symbol ‘Istart-high’ in Chapter “Characteristics”) in order to implement a low “hiccup” duty cycle. This helps insure devices on the output secondary winding do not get destroyed during output short circuit, violating safety conditions. The start-up current source also plays a key role in implementation of burst mode stand-by (see symbol ‘Irestart-stby’ in Chapter “Characteristics”), which will be explained later.
Vaux
Vout
Vgate
(1) Start-up current charges capacitor V (2) Charging of capacitor V
11 V
(2)
8.05 V
(1)
switchingoff
.
is taken-over by the auxiliary winding.
aux
aux
Fig.4 Normal start-up waveforms.
t
t
t
MGR694
handbook, full pagewidth
(1) Start-up current source charges capacitor V
Vaux
Vgate
normal operation
.
aux
fault condition
(1)
switching off
Fig.5 Safe-start mode waveforms.
MGR695
t
t
Page 6
Philips Semiconductors Preliminary specification
GreenChip; SMPS module TEA1566
Reference
All reference voltages are derived from a temperature compensated, on-chip, band gap. The band gap reference voltage is also used, together with an external resistor connected at pin Iref, to generate accurate, temperature independent, bias currents in the chip:
V
REF
I
REF
=
------------- ­R
REF
[A]
The frequency of the controller is also set by the reference resistor Rref (also see Section “Oscillator”).
Sample and hold
GreenChip ICs employ voltage mode feedback for regulating the output voltage. In primary feedback mode, a novel sample and hold circuit is used. The sample and hold circuit works by sampling the current into pin Dem, which is related to the output voltage via Rdem, during the time that the secondary current is flowing:
a × V
V
dem+
out=Iref
× R
dem+Vdem+
where:
is specified in chapter “Characteristics”
a = a constant determined by turn ratio of the transformer.
This sampled current information is stored on the external capacitor connected to pin Vctrl. The pulse width modulator uses this voltage information to set the duty cycle of operation for the power MOSFET. In secondary feedback, the feedback voltage is provided by an opto-coupler.
Oscillator
The oscillator is used to set the switching duty cycle by comparing the oscillator ramp to the output of the error amplifier in the pulse width modulator circuit.The oscillator is fully integrated and works by charging and discharging an internal capacitor between two voltage levels to create a sawtooth waveform with a rising edge which is 80% of the oscillator cycle. This ratio is used to set a maximum switching duty cycle of 80% for the IC. The oscillator is internally trimmed to 5% accuracy. The oscillator frequency can be adjusted between 50 to 100 kHz (see symbol f
osc-h-range
in Chapter “Characteristics”) by changing the external reference resistor (see symbol Rref in Chapter “Characteristics”) that sets the chip bias currents. This gives additional flexibility to the power supply designer in the choice of his system components.The frequency is correlated with the value of the reference resistor Rref (see Fig.6).
In Chapter “Characteristics” f
osc-typical
osc-l
and f
osc-h
and
, f
the Rref operating resistor range are specified.
MGR936
110
handbook, halfpage
high
frequency
(kHz)
90
55
low
frequency
(kHz)
45
Pulse width modulator
The pulse width modulator, which is made up of an inverting error amplifier and a comparator (see Fig.2), drives the power MOSFET with a duty cycle which is inversely proportional to the voltage on pin Vctrl. In primary feedback mode, this is the voltage on the sample and hold capacitor and in secondary feedback mode, this voltage is provided by an opto-coupler. A signal from the oscillator sets a latch that turns on the power MOSFET. The latch is reset by the signal from the pulse width modulator or by the duty cycle limiting circuit. The latching PWM mode of operation prevents multiple switching of the power switch. The maximum duty cycle is set internally at 80%.
Figure 7 shows the normal switching operation of the IC.
70
50
30
10 20 30 40
(1) High frequency mode. (2) Low frequency mode.
(1)
(2)
Fig.6 Frequency as function of the R
R
REF
(k)
REF
35
25
15
value.
Page 7
Philips Semiconductors Preliminary specification
GreenChip; SMPS module TEA1566
Multi frequency control
The oscillator is also capable of working at a lower frequency (see f
in Chapter “Characteristics”). A ratio
osc-l
of 1 : 2.5 is maintained between high and low frequency of the oscillator. Low frequency operation is invoked if the power supply is working at or below one ninth of its peak power. By working at a lower frequency, the switching losses in the power supply are reduced. A novel scheme is used to ensure that the transfer of high to low frequency and vice versa has no effect on the regulation of the output voltage.
Gate driver
The gate driver has a totem-pole output stage that has current sourcing capability of 120 mA and a current sink capability of 550 mA. This is to enable fast turn on and turn off of the power device for efficient operation.
A lower driver source current has been chosen in order to limit the V/t at switch-on. This is advantageous for EMI (ElectroMagnetic Interference) and reduces the current spike across Rsense.
Demagnetization protection
This feature guarantees discontinuous conduction mode operation for the power supply which simplifies the design of feedback control and gives faster transient response.
Demagnetization protection is an additional protection feature that protects against saturation of the transformer/inductor. Demagnetization protection also protects the power supply components against excessive stresses at start-up, when all energy storage components are completely discharged. The converter is cycle by cycle protected during shorted output system fault condition due to the demagnetization protection. The value of the demagnetization resistor (R
) can be calculated with the
dem
formula given in Section “Sample and hold”.
Negative clamp
The negative clamp circuit does not let the voltage on pin Dem go below 0.4 V, when the auxiliary winding voltage goes negative during the time that the power device is turned on, to ensure correct operation of the IC.
Over voltage protection
An Over Voltage Protection (OVP) mode has been implemented in the GreenChip series. This circuit works by sensing the Vaux voltage. If the output voltage exceeds the preset voltage limit, the OVP circuit turns off the power MOSFET. With no switching of the power device, the Vaux capacitor is not re-supplied and discharges to UVLO level and the system goes into the low dissipation safe-restart mode described earlier. The system recovers from the safe-restart mode only if the OVP condition is removed.
Over current protection
Cycle by cycle Over Current Protection (OCP) is provided by sensing the voltage on an external resistor which is connected to the source of the power MOSFET. The voltage on the current sense resistor, which reflects the amplitude of the primary current, is compared internally with a reference voltage using a high speed comparator. This threshold voltage is specified as V
th(Imax)
in the chapter “Characteristics”. The maximum primary
V
(protection) current is therefore: [A]
I
prot
th Imax()
=
-----------------------­R
sense
If the power device current exceeds the current limit, the comparator trips and turns off the power device. The power device is typically turned off in 210 ns (see tDin Chapter “Characteristics”).
The availability of the current sense resistor off-chip for programming the OCP trip level increases design flexibility for the power supply designer. An off-chip current sense resistor also reduces the risk of an OCP condition being sensed incorrectly. At power MOSFET turn-on the V/t limiters capacitance discharge current does not have to flow through the sense resistor, because this capacitor can be connected between drain and source of the power MOSFET directly.
The Leading Edge Blanking (LEB) circuit works together with the OCP circuit and inhibits the operation of the OCP comparator for a short duration (see t
LEB
in Chapter “Characteristics”) when the power device is turned on. This ensures that the power device is not turned off prematurely due to false sensing of an OCP condition because of current spikes caused by discharge of primary-side snubber and parasitic capacitances. LEB time is not fixed and it tracks the oscillator frequency.
Page 8
Philips Semiconductors Preliminary specification
GreenChip; SMPS module TEA1566
Over temperature protection
Protection against excessive temperature is provided by an analog temperature sensing circuit that turns off the power device when the temperature exceeds typically 140 °C.
On/off mode
The expensive mains switch can be replaced by an in-expensive functional switch by using the on/off mode. Figure 13 shows a flyback converter configured to use the on/off mode. Depending upon the position of switch S1, either voltage close to ground or a voltage of greater than typical 2.5 V exists on pin OOB.
The difference between these voltages is detected internally by the IC. The IC goes into the off-mode if the voltage is low, where it consumes a current of typical 350 µA (see Iin-off in Chapter “Characteristics”). If the voltage on pin OOB is typically 2.5 V (see Von/off in Chapter “Characteristics”), the IC goes through the start-up sequence and commences normal operation.
In Fig.14 a Mains Under Voltage Lock Out (MUVLO) function has been created using 3 resistors. Assuming that R3 is chosen very high ohmic, the GreenChip™ starts
operating if:
V
MAINS
R1
------- ­R2
V
OOB
R1 R2»()×
Burst mode stand-by
Pin OOB is also used to implement the burst mode stand-by. In burst mode stand-by, the power supply goes into a special low dissipation state where it typically consumes less than 2 W of power. Figure 14 shows a flyback converter using the burst mode stand-by feature. The system enters burst mode when the microcontroller closes switches S2 and S3 on the secondary side. Switch S2 shorts the output capacitor to the voltage level of the microcontroller capacitor. The output secondary winding now supplies the microcontroller capacitor. When the voltage on the microcontroller capacitor exceeds the zener voltage (V
) the opto-coupler is activated which
z
sends a signal to pin OOB. In response to this signal, the IC stops switching and goes into a “hiccup” mode.
Figure 7 shows the burst-mode operation graphically. The hiccup mode during burst mode operation differs from the hiccup in safe-restart mode during system fault. For safe restart mode, the power has to be reduced. For burst mode, sufficient power to supply the microcontroller has to be delivered. To prevent transformer rattle, the transformer peak current is reduced by a factor of 3. Burst mode stand-by operation continues till the microcontroller opens switches S2 and S3. The system then goes through the start-up sequence and commences normal switching behaviour.
In this way it is assured that the power supply only starts working above a Vmains of e.g. 80 V. The bleeder current through R1 should be low (e.g. 30 µA at 300 V).
Page 9
Philips Semiconductors Preliminary specification
GreenChip; SMPS module TEA1566
handbook, full pagewidth
Vin
Vin
Vdrain
Vout
Vaux
Vgate
Iaux
burst mode
VµP
0
(1)
start up
sequence
normal
operation
over voltage
protection
output short
circuit
burst mode stand-by
normal
operation
MGR696
(1) All negative currents are currents out the chip.
Fig.7 Typical waveforms.
Page 10
Philips Semiconductors Preliminary specification
GreenChip; SMPS module TEA1566
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); unless noted all voltages are measured with respect to pin GND.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
I(max)
I
D
V
OOB
I
OOB
I
demag
V
ctrl
V
lsense
I
ref
V
aux
T
j
T
stg
V
es
maximum DC input voltage 600 V
during inductive turn-off;
720 V
note 1 supply current 7A mode detect input voltage 0.3 +14 V mode detect input current −+2mA demagnetization input current −±1mA feedback input voltage 0.3 +5 V current sense input voltage 0.3 +5 V reference input current −−1mA auxiliary supply voltage 0.3 +18 V operating junction temperature 10 +140 °C storage temperature 40 +150 °C electrostatic handling voltage class 2
human body model; note 3 2500 V machine model; note 4 250 V
Notes
1. Repetitive clamped inductive turn-off energy <15 mJ.
2. Single pulse avalanche energy at T
<25°C: 570 mJ.
j
3. Equivalent to discharging a 100 pF capacitor through a 1.5 k resistor.
4. Equivalent to discharging a 200 pF capacitor through a 0.75 mH coil.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
IC controller
R R
th(j-a) th(j-c)
thermal resistance from junction to ambient 70 K/W thermal resistance from junction to case 31 K/W
Power FET
R R
th(j-a) th(j-c)
thermal resistance from junction to ambient 37 K/W thermal resistance from junction to case 0.85 K/W
QUALITY SPECIFICATION
In accordance with
“SNW-FQ-611 part E”
.
1999 Apr 20 10
Page 11
Philips Semiconductors Preliminary specification
GreenChip; SMPS module TEA1566
CHARACTERISTICS
= 10 to +110 °C; Vin= 300 V; V
T
j
currents out of the chip are negative; all voltages are measured with respect to ground.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Input voltage and current on pin 9
V
dlow
I
in
I
in(off)
minimum start drain voltage 100 −−V input current normal operation 20 60 100 µA off mode current V
Start-up current source and Vaux management on pin 2
V
start
V
uvlo
V
hys
I
start(low)
I
start(high)
l
aux
I
restart(prot)
I
restart(stdby)
V
clamp
start-up voltage 10.4 11 11.6 V under voltage lockout 7.4 8.05 8.6 V operation voltage hysteresis V start-up current 0 V < V start-up current 0.5 V < V IC supply current in high frequency mode 7.0 7.7 8.5 mA restart current in protection mode 600 530 460 µA restart current in stand-by mode 2.5 2.1 1.7 mA clamp voltage level l
Reference input on pin 3
V
ref
R
ref
reference voltage capacitor pin Iref = 50 nF 2.37 2.47 2.57 V operating resistor range 16.9 24.9 33.2 k
Oscillator
f
osc-l
f
osc-h
δ
max
f
ratio
f
osc-h-range
low frequency low power mode;
high frequency normal mode;
maximum duty cycle f = f ratio f
osc-h/fosc-l
range of f
osc-h
Demagnetization input on pin 6
V
th(comp)
t
PD
demag comparator threshold V propagation delay to output
buffer
I
bias
V
clamp(neg)
V
clamp(pos)
input bias current V negative clamp level I positive clamp level I
Sample and hold input on pin 6
I
dem
l
) sample threshold current % of Idem 78 83 88 %
th(sh
t
PD
normal control current lref = 100 µA 90 100 110 µA
propagation delay of current comparator
= 8.6 to 13 V; R
aux
= 24.9 kΩ±0.1%; all currents into the chip are positive and all
Iref
< 1.95 V 150 350 550 µA
OOB
start-Vuvlo
< 0.5 V 270 230 190 µA
aux
aux<Vstart
= 5 mA (non switching) 15 18 V
aux
2.60 2.95 3.30 V
5.0 3.0 1.0 mA
27.5 29 30.5 kHz
C
=50nF
IREF
66 70 74 kHz
C
=50nF
IREF
osc-h
78 80 82 %
2.30 2.45 2.60
with changing R
decreasing 50 65 80 mV
dem
IREF
50 70 100 kHz
300 500 700 ns
=65mV −0.50
dem
= 500 µA 0.45 0.35 0 V
dem
= 100µA 2.3 2.6 2.9 V
dem
(1)
−−0.10
(1)
µA
δVdemag/δt positive 170 450 730 ns δVdemag/δt negative 20 90 160 ns
1999 Apr 20 11
Page 12
Philips Semiconductors Preliminary specification
GreenChip; SMPS module TEA1566
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Over voltage protection on pin 2
V
OVP
t
d(OVP)
Isense and low power on pin 1
t
LEB
V
th(Imax)
t
d
V
th(lopower)
Control
dδ/dV gain f
V
CTRL(min)
V
CTRL(max)
I
CTRL(leak)
absolute maximum OVP level fixed maximum level 14.0 14.7 15.5 V OVP delay time 350 550 800 ns
leading edge blanking time R
= 0.7 × R
ref
R
ref=Rref(nom)
= 1.3 × R
R
ref
ref(nom)
ref(nom)
180 260 340 ns 240 340 440 ns
415 470 560 ns maximum current limit voltage 0.46 0.49 0.53 V delay to MOSFET off time to MOSFET off at
150 210 270 ns
dV/dt = 200 mV/µs; Cgs = 500 pF
threshold voltage for switch over to low power 155 165 175 mV
95 85 75 %/V
60 50 40 %/V
2.00 2.15 2.30 V
minimum control voltage on
osc-h
f
osc-l
pin 4 maximum control voltage on
2.90 3.05 3.20 V
pin 4 leakage current in/out on
note 1 1 +1 µA
pin 4
Over temperature protection
T
trip
temperature limit 130 140 155 °C
On/off/burst mode selection input on pin 7
V V
on/off burst
on/off trip level 2.3 2.5 2.8 V burst mode trip level active 6.5 7.5 V
inactive −−5.5 V
I
OOB
output current on pin OOB V
> 400 mV; note 1 5 -0.1 µA
OOB
Power MOSFET 7N60E; note 2 V
DS(break)
R
DS(on)
drain-to-source breakdown voltage
drain-to-source on-state resistance
Tj=25°C; Vgs = 0 V; Id = 0.25 mA
Tj=25°C; Vgs=10V;Vaux=10V;
600 −−V
1.0 1.2
Id = 7A
Notes
1. Min. and max. values are guaranteed by design.
2. The power MOSFET outputs of these devices are similar to the Philips Semiconductor type PHP7N60. These devices feature an excellent combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
1999 Apr 20 12
Page 13
Philips Semiconductors Preliminary specification
GreenChip; SMPS module TEA1566
160
handbook, halfpage
P
(W)
120
80
40
0
0 40 80 160
MGR937
120
T
case
Fig.8 Normalised power derating.
(°C)
3
10
handbook, halfpage
C
j
(pF)
2
10
10
11010
Coss
2103
VDS (V)
Fig.9 Junction capacitance.
MGR939
handbook, halfpage
3
a
2
1
0
80
a = R
DS(on)/RDS(on)
ID= 6.2A; V
aux
at 25 °C.
>10V.
0 16080
Tj (°C)
Fig.10 Normalised drain-to-source on-state
resistance.
MGR938
1.2
handbook, halfpage
a
1.1
1
0.9
100 0 100 200 Tj (°C)
Fig.11 Normalised drain-to-source breakdown
voltage.
MGR940
1999 Apr 20 13
Page 14
Philips Semiconductors Preliminary specification
GreenChip; SMPS module TEA1566
handbook, full pagewidth
I
VS= 50V; I V
= 0.5 V; V
dem
IVC= 6mA; V L =25 mH
MAX
=7A
aux
CLAMP
closed
=11V
= 720V
open
vc
Vctrl
Vaux
Vin
TEA1566
Dem Gnd
Fig.12 Clamped inductive test circuit.
APPLICATION INFORMATION
A converter using the GreenChip is usually a flyback or a Buck converter that is made up of the EMI filter, full bridge rectifier, filter capacitor, transformer, output stage(s), and some snubber circuitry.
Depending upon the type of feedback used, either an auxiliary winding (primary regulation) or an opto-coupler (secondary regulation) is used. GreenChip, due to its high level of integration uses very few external components. A sense resistor converts the primary current into a voltage on pin Isense. The IC uses this information for setting the peak current in the converter.
A capacitor supplied by an auxiliary winding buffers the internal supply of the IC and is connected on pin Vaux.
L
V
MGR941
S
Isense
I
MAX
CURRENT
SENSING
CIRCUIT
CLAMP
CIRCUIT
The primary side auxiliary winding is connected via a resistor to pin Dem. Besides being used for demagnetization protection, pin Dem is also used for primary side regulation.
Pin OBB is a multi use pin and depending upon connection can be used for implementation of the on/off/burst mode functions.
Pin 8 is not connected and serves as a high voltage spacer pin.
Pin Vin is the connection for the drain of the internal power MOSFET and is a high voltage pin. The internal start-up current source also uses this pin as a supply for charging up the Vaux capacitor during start-up and safe-restart modes.
The auxiliary winding is also used for primary mode output voltage regulation. A resistor connected on pin Iref sets the reference currents in the IC. A small capacitor (0.2 to 2 nF) connected on pin Vctrl is used by the internal sample and hold circuit for regulation in primary feedback scheme. The same pin is also used for secondary sensing and serves as the input for the signal from the opto-coupler.
Pin Gnd is the ground connection pin.
1999 Apr 20 14
GreenChip is a versatile IC that can be used in flyback and Buck converter topologies and can be configured to work in different modes. The application diagrams on the next pages give some examples.
For additional information also see:
Application note AN98011: “200 W SMPS with TEA1504”
Application note AN98058: “75 W SMPS with TEA1566”
.
Page 15
Philips Semiconductors Preliminary specification
GreenChip; SMPS module TEA1566
handbook, full pagewidth
mains
TEA1566
9
8
7
6
5
4 3
2
1
Vin
NC
OOB
Dem
Gnd
Vctrl Iref
Vaux
Isense
R
SENSE
C
R
DEM
R
REF
REF
C
R
AUX
OOB
S1
MGR697
R
CTRL
output
Fig.13 Typical flyback configuration with secondary sensing and on/off feature.
1999 Apr 20 15
Page 16
Philips Semiconductors Preliminary specification
GreenChip; SMPS module TEA1566
handbook, full pagewidth
mains
TEA1566
9
8
7
6
5
4
3
2
1
Vin
NC
OOB
Dem
Gnd
Vctrl
Iref
Vaux
Isense
R1
R2
S1
S2
output
from microcontroller
microcontroller
supply
V
z
R3
Fig.14 Flyback configuration using the burst mode stand-by, MUVLO and on/off features.
1999 Apr 20 16
MGR698
Page 17
Philips Semiconductors Preliminary specification
GreenChip; SMPS module TEA1566
handbook, full pagewidth
mains
output
Vin
9
NC
8
OOB
7
Dem
6
Gnd
TEA1566
5
4
3
2
1
Vctrl
Iref
Vaux
Isense
MGR699
Fig.15 Typical Buck configuration with primary sensing.
handbook, full pagewidth
mains
output
Vin
9
NC
8
OOB
7
Dem
6
Gnd
TEA1566
5
Vctrl
4
Iref
3
Vaux
2
Isense
1
MGR700
Fig.16 Typical Buck configuration with secondary sensing.
1999 Apr 20 17
Page 18
Philips Semiconductors Preliminary specification
GreenChip; SMPS module TEA1566
PACKAGE OUTLINES
SIL9P: plastic single in-line power package; 9 leads
D
d
seating plane
b
SOT131-2
non-concave
x
E
h
view B: mounting base side
A
B
j
A
1
D
h
2
E
19
Z
DIMENSIONS (mm are the original dimensions)
A
UNIT A
mm
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
1
max.
2.0
OUTLINE VERSION
SOT131-2
4.6
4.2
e
b
b
cD
max.
1.1
p2
0.75
0.48
0.60
0.38
IEC JEDEC EIAJ
b
p
(1)
24.0
23.6
REFERENCES
w M
0 5 10 mm
scale
deD
h
20.0
10 2.54
19.6
1999 Apr 20 18
E
12.2
11.8
L
c
Q
(1)
E
h
6
3.4
3.1
Lj
Q
17.2
2.1
16.5
1.8
EUROPEAN
PROJECTION
0.25w0.03
ISSUE DATE
92-11-17 95-03-11
(1)
Z
x
2.00
1.45
Page 19
Philips Semiconductors Preliminary specification
GreenChip; SMPS module TEA1566
DBS9P: plastic DIL-bent-SIL power package; 9 leads (lead length 12 mm)
non-concave
D
d
j
x
E
h
B
D
h
view B: mounting base side
A
2
E
A
SOT157-2
19
e
Z
DIMENSIONS (mm are the original dimensions)
UNIT A A e
17.0
15.5
4.6
4.2
mm
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE VERSION
SOT157-2
1
e
(1)
cD
0.75
0.48
0.60
0.38
IEC JEDEC EIAJ
deD
24.0
20.0
23.6
19.6
w M
b
p
E
h
12.2
10 5.08
11.8
REFERENCES
0 5 10 mm
scale
(1)
12bp
2.54
e
5.08
L
3
L
E
2
h
6
Q
LL3m
3.4
12.4
3.1
11.0
c
m
e
2.4
1.6
PROJECTION
2
4.3
EUROPEAN
2.1
1.8
v M
(1)
v
Qj
0.8
0.25w0.03
ISSUE DATE
95-03-11 97-12-16
Z
x
2.00
1.45
1999 Apr 20 19
Page 20
Philips Semiconductors Preliminary specification
GreenChip; SMPS module TEA1566
SOLDERING Introduction to soldering through-hole mount
packages
This text gives a brief insight to wave, dip and manual soldering. A more in-depth account of soldering ICs can be found in our
Packages”
Wave soldering is the preferred method for mounting of through-hole mount IC packages on a printed-circuit board.
Soldering by dipping or by solder wave
The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joints for more than 5 seconds.
Suitability of through-hole mount IC packages for dipping and wave soldering methods
DBS, DIP, HDIP, SDIP, SIL suitable suitable
“Data Handbook IC26; Integrated Circuit
(document order number 9398 652 90011).
PACKAGE
The total contact time of successive solder waves must not exceed 5 seconds.
The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (T printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit.
Manual soldering
Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds.
SOLDERING METHOD
DIPPING WAVE
(1)
stg(max)
). If the
Note
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Apr 20 20
Page 21
Philips Semiconductors Preliminary specification
GreenChip; SMPS module TEA1566
NOTES
1999 Apr 20 21
Page 22
Philips Semiconductors Preliminary specification
GreenChip; SMPS module TEA1566
NOTES
1999 Apr 20 22
Page 23
Philips Semiconductors Preliminary specification
GreenChip; SMPS module TEA1566
NOTES
1999 Apr 20 23
Page 24
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© Philips Electronics N.V. 1999 SCA63 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
Printed in The Netherlands 295002/50/01/pp24 Date of release: 1999 Apr 20 Document order number: 9397 750 03312
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