Datasheet TEA1208T Datasheet (Philips)

查询TEA1208T供应商查询TEA1208T供应商

INTEGRATED CIRCUITS

DATA SH EET

TEA1208T

High efficiency DC/DC converter

Product specification 2002 Nov 15

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1208T

FEATURES

• Fully integrated DC/DC converter circuit

• Up-or-down conversion

• Start-up from 1.85 V input voltage

• Adjustable output voltage

• High efficiency over a wide range of loads

• Power handling capability up to 0.42 A continuous

average current

• 275 kHz switching frequency

• Low quiescent power consumption

• External clock synchronization

• True current limit for Li-ion battery compatibility

• Up to 100% duty cycle in down conversion

• Undervoltage lockout

• Shut-down function

• 8-pin SO package.

APPLICATIONS

• Cellular and cordless phones, Personal Digital
Assistants (PDAs) and others

• Supply voltage source for low-voltage chip sets

• Portable computers

• Battery backup supplies

• Cameras.

GENERAL DESCRIPTION

The TEA1208T is a fully integrated DC/DC converter.
Efficient, compact and dynamic power conversion is
achieved using special digital control concepts - Pulse
Width Modulation (PWM) and Pulse Frequency
Modulation (PFM), integrated low R
switches with low parasitic capacitances, and fully
synchronous rectification.

The device operates at a switching frequency of 275 kHz
requiring only minimum sized external components.
Deadlock isprevented by an on-chip undervoltage lockout
circuit.

Efficient behaviour during short load peaks and
compatibility with Li-ion batteries is guaranteed by an
accurate current limiting function.

CMOS power

DSon

ORDERING INFORMATION

TYPE NUMBER

NAME DESCRIPTION VERSION

TEA1208T SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1

PACKAGE

2002 Nov 15 2

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1208T

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Voltage levels

UP CONVERSION; pin U/D = LOW
V

I

V

O

V

I(start)

input voltage V
output voltage 2.80 − 5.50 V

start-up input voltage IL< 62 mA 1.40 1.60 1.85 V
DOWN CONVERSION; pin U/D = HIGH
V

I

V

O

ENERAL

G
V

fb

input voltage 2.80 − 5.50 V

output voltage 1.30 − 5.50 V

feedback voltage 1.19 1.24 1.29 V

Current levels

I

q

I

shdwn

I

LX

∆I

lim

quiescent current on pin 3 down conversion;

current in shut-down state − 210µA

maximum continuous current on pin 4 T

current limit deviation I

Power MOSFETs

R

DSon

drain-to-source on-state resistance

N-type 0.10 0.20 0.30 Ω
P-type 0.10 0.22 0.35 Ω

Efficiency

η

1

η

2

efficiency up conversion VI= 3.6 V; VO= 4.6 V;

efficiency down conversion VI= 3.6 V; VO= 2.0 V;

Timing

f

sw

f

sync

t

res

switching frequency PWM mode 220 275 330 kHz

synchronization clock input frequency 4 6.5 20 MHz

response time from standby to P

I(start)

52 65 72 µA

VI= 3.6 V

=80°C −−0.30 A

amb

= 0.5 to 2.5 A

lim

up conversion −17.5 − +17.5 %
down conversion −17.5 − +17.5 %

L1 = 10 µH

I

=1mA − 88 − %

L

I

= 200 mA − 95 − %

L

L1 = 10 µH

=1mA − 86 − %

I

L

I

= 200 mA − 93 − %

L

− 50 −µs

0(max)

− 5.50 V

2002 Nov 15 3

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1208T

BLOCK DIAGRAM

dbook, full pagewidth

UPOUT/DNIN

3

P-type POWER FET

SUPPLY

INTERNAL

sense FET

TEA1208T

CIRCUIT

START-UP

FB

7

AND

CONTROL LOGIC

MCE155

BAND GAP

REFERENCE

TIME

COUNTER

DIGITAL CONTROLLER

MODE GEARBOX

SHDWN

5681

GATE

SYNC

SYNC U/D

Fig.1 Block diagram.

This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in

_white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in

white to force landscape pages to be rotated correctly whenbrowsing through the pdf in the Acrobat reader. white to force landscape pages to be ...

2002 Nov 15 4

CURRENT LIMIT

I/V

CONVERTER

4

LX

2

ILIM

COMPARATORS

TEMPERATURE

I/V

CONVERTER

N-type

POWER

PROTECTION

FET

sense

FET

13 MHz

OSCILLATOR

GND

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1208T

PINNING

SYMBOL PIN DESCRIPTION

U/D 1 up-or-down conversion

selection input; active LOW for
up conversion

ILIM 2 current limiting resistor

connection

UPOUT/DNIN 3 output voltage in up conversion;

input voltage in down

conversion
LX 4 inductor connection
SYNC 5 synchronization clock input
GND 6 ground
FB 7 feedback input
SHDWN 8 shut-down input

handbook, halfpage

UPOUT/DNIN GND

1

U/D SHDWN

2

ILIM FB

TEA1208T

3
4

LX SYNC

8
7
6
5

MCE154

Fig.2 Pin configuration.

FUNCTIONAL DESCRIPTION
Control mechanism

The TEA1208T DC/DC converter is able to operate in
either PFM (discontinuous conduction) or PWM
(continuous conduction) mode. All switching actions are
completely determined by a digital control circuit which
uses the output voltage level as its control input. This
special design enables the use of a pulse width and
frequency modulation scheme, which ensures optimum
power efficiency over the complete operating range of the
converter.

Whenhigh outputpower is requested,the deviceoperates
in PWM (continuous conduction) mode. This results in
minimumAC currentsinthe circuitcomponentsand hence
optimumefficiency, minimumcosts and lowEMC. InPWM
mode, the output voltage is allowed to vary between a
window represented by two predefined voltage levels.
As long as the output voltage stays within this window,
switching continues in a fixed pattern. When the output
voltage reaches a window border, the digital controller
immediately adjusts the pulse width and inserts a current
stepso that theoutputvoltagestays within thewindowwith
higher or lower current capability. This approach enables
very fast reaction to load variations. Figure 3 shows the
converter’s response to a sudden load increase. The
upper trace shows the output voltage. The ripple on top of
the DC level is a result of the current in the output
capacitor, which changes sign twice per cycle, times the
capacitor’s internal Equivalent Series Resistance (ESR).
Aftereach ramp-down oftheinductor current, i.e.whenthe
ESR effect increases the output voltage, the converter
determines what to do in the next cycle.

As soon as more load current is taken from the output the
output voltage starts to decay.

When theoutput voltage becomes lower than the low limit
ofthe window,it is correctedby extendingthe period ofthe
inductor current ramp-up time. As a result, the DC current
level is increased and normal PWM control can continue.
The output voltage (including ESR effect) is again within
the predefined window. Figure 4 depicts the spread of the
output voltage window. The absolute value is most
dependent on spread, while the actual window size is not
affected. For a given device, the output voltage will not
vary more than 2% typically.

In low output power situations, the TEA1208T will switch
over to PFM (discontinuous conduction) operating mode.
In this mode, regulation information obtained in previous
PWM operating modes is used. This results in optimum
inductor peak current levels in the PFM mode, which are
slightly larger than the inductor ripple current in the PWM
mode. As a result, the transition between PFM and PWM
mode is optimum under all circumstances. In the PFM
mode the TEA1208T regulates the output voltage to the
high window limit as shown in Fig.3.

Synchronous rectification

For optimum efficiency over the whole load range,
synchronous rectifiers inside the TEA1208T ensure that
during the whole second switching phase, all inductor
current will flow through the low-ohmic power MOSFETs.
Special circuitry isincluded whichdetects thatthe inductor
current reaches zero. Following this detection, the digital
controller switches off the power MOSFET and starts
regulation.

2002 Nov 15 5

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1208T

Start-up

Start-upfrom lowinput voltage in up conversionis realized
by an independent start-up oscillator, which starts
switching the N-type power MOSFET as soon as the
voltage at pin UPOUT/DNIN ismeasured tobe sufficiently
high. The switch actions of the start-up oscillator will
increase the output voltage.As soonas theoutput voltage
is high enough for normal regulation, the digital control
system takes over the control of the power MOSFETs.

Undervoltage lockout

As a result of too high a load or disconnection of the input
power source, the output voltage can drop so low that
normal regulation cannot be guaranteed. In this case, the
device switches back to start-up mode. If the output
voltage drops even further, switching stops completely.

Shut-down

When the shut-down input is made HIGH, the converter
disables both power switches reducing the power
consumption to a few microamperes.

Power switches

The device has two power switches - one N-type and one
P-type power MOSFET, having a typical drain-to-source
resistance of 0.20 Ω and 0.22 Ω respectively.
The maximum average current in the power switches is

0.30 A at T

amb

=80°C.

Temperature protection

In PWM mode, the device will stop operating if the die
temperature is too high (typically 175 °C). Operation
resumes when the die temperature falls below 175 °C.
As a result, low-frequency cycling between the on and off
state will occur. Note that if the temperature of the device
approaches T

, the actual maximum parameter limits

max

may be very different from those specified.

Current limiters

If the current inone ofthe powerswitches exceeds its limit
in the PWM mode, the current ramp is stopped
immediately, and the next switching phase is entered.
Currentlimiting isrequired to enable optimal useof energy
in Li-ion batteries, and to keep power conversion efficient
during temporaryhigh loads. Furthermore, current limiting
protects the IC against overload conditions, inductor
saturation, etc. The current limiting level is set by an
external resistor.

External synchronization

If an external high-frequency clock is applied to the
synchronization clock input, the switching frequency in
PWM mode will be exactly that frequency divided by 22.
In thePFM mode, theswitching frequency isalwayslower.
The quiescent current of the device increases when
external clock pulses are applied. When no external
synchronization is necessary, the synchronization clock
input must be connected to ground level.

Behaviour at input voltage exceeding the specified
range

In general, an input voltage exceeding thespecified range
isnot recommendedsince instability mayoccur. Thereare
two exceptions:

• Upconversion: atan input voltage higher thanthe target
output voltage, but up to 6 V, the converter will stop
switchingand the internalP-type power MOSFETwillbe
conducting. The output voltage will equal the input
voltage minus some resistive voltage drop. The current
limiting function is not active.

• Down conversion: when the input voltage is lower than
the target output voltage, but higher than 2.8 V, the
P-type power MOSFET will stay conducting resulting in
an output voltage being equal to the input voltage minus
some resistive voltage drop. The current limiting
function remains active.

2002 Nov 15 6

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1208T

handbook, full pagewidth

load increase

V

o

I

L

start corrective action

time

time

high window limit

low window limit

MGK925

Fig.3 Response to load increase.

handbook, full pagewidth

V

out, typ

2%

typical situation

maximum positive spread of V

V

h

V

l

+4%

V

h

2%

V

l

−4%

maximum negative spread of V

Fig.4 Spread of location of output voltage window.

2002 Nov 15 7

fb

upper specification limit

V

h

2%

V

l

lower specification limit

fb

MGR667

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1208T

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

n

T

j

T

amb

T

stg

V

es

Notes

1. Class 3; equivalent to discharging a 100 pF capacitor through a 1500 resistor.

2. Class 2; equivalent to discharging a 200 pF capacitor through a 10 Ω resistor and a 0.75 µH inductor.

voltage on any pin shut-down mode −0.2 +6.5 V

operating mode −0.2 +5.9 V
junction temperature −25 +150 °C
ambient temperature −40 +80 °C
storage temperature −40 +125 °C
electrostatic handling voltage human body model; note 1 −4000 +4000 V

machine model; note 2 −300 +300 V

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

thermal resistance from junction to ambient in free air 150 K/W

QUALITY SPECIFICATION

In accordance with

“SNW-FQ-611 part E”

.

2002 Nov 15 8

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1208T

CHARACTERISTICS

T

= −40 to +80 °C; all voltages are measured with respect to ground; positive currents flow into the IC; unless

amb

otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Voltage levels

P CONVERSION; pin U/D = LOW

U
V

I

V

O

V

I(start)

V

I(uvlo)

OWN CONVERSION; PIN U/D = HIGH

D
V

I

V

O

input voltage V
output voltage 2.80 − 5.50 V
start-up input voltage IL< 62 mA 1.40 1.60 1.85 V
undervoltage lockout input voltage note 1 1.50 2.10 2.50 V

input voltage note 2 2.80 − 5.50 V
output voltage 1.30 − 5.50 V

GENERAL
V

∆V

fb

wdw

feedback input voltage 1.19 1.24 1.29 V
output voltage window PWM mode 1.5 2.0 3.0 %

Current levels

I

q

I

shdwn

I

LX

quiescent current on pin 3 down conversion;

current in shut-down mode − 210µA
maximum continuous current on

pin 4

∆I

lim

current limit deviation I

Power MOSFETs

R

DSon

drain-to-source on-state resistance

N-type 0.10 0.20 0.30 Ω
P-type 0.10 0.22 0.35 Ω

Efficiency

η

1

efficiency up conversion VI= 3.6 V; VO= 4.6 V;

I(start)

52 65 72 µA

V3= 3.6 V; note 3

T

=60°C −− 0.42 A

amb

T

=80°C −− 0.30 A

amb

= 0.5 to 2.5 A;

lim

note 4

up conversion −17.5 − +17.5 %
down conversion −17.5 − +17.5 %

L1 = 10 µH; note 5

I

=1mA − 88 − %

L

I

=10mA − 93 − %

L

I

=50mA − 93 − %

L

I

= 100 mA − 94 − %

L

= 200 mA − 95 − %

I

L

= 500 mA − 92 − %

I

L

− 5.50 V

2002 Nov 15 9

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1208T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

η

2

Timing

f

sw

f

sync

t

res

Temperature

T

amb

T

max

Digital levels

V

lL

V

IH

Notes

1. Theundervoltage lockoutvoltage shows widespecification limits sinceit decreases atincreasing temperature. When
the temperature increases, the minimum supply voltage of the digital control part of the IC decreases and therefore
the correct operation of this function is guaranteed over the whole temperature range.

2. When VI is lower than the target output voltage but higher than 2.8 V, the P-type power MOSFET will remain
conducting (100% duty cycle), resulting in VO following VI.

3. V3 is the voltage on pin 3 (UPOUT/DNIN).

4. The current limit is defined by an external resistor R
current limit increases in proportion to the programmed current limiting level.

5. The specified efficiency is valid when using an output capacitor having an ESR of 0.10 Ω and a 10 µH small size
inductor (Coilcraft DT1608C-103).

6. If the applied HIGH-level voltage is less than V3− 1 V, the quiescent current (lq) of the device will increase.

efficiency down conversion VI= 3.6 V; VO= 2.0 V;

L1 = 10 µH; note 5

I

=1mA − 86 − %

L

I

=10mA − 91 − %

L

I

=50mA − 92 − %

L

I

= 100 mA − 92 − %

L

= 200 mA − 93 − %

I

L

I

= 500 mA − 89 − %

L

switching frequency PWM mode 220 275 330 kHz
synchronization clock input

4 6.5 20 MHz

frequency
response time from standby to P

o(max)

− 50 −µs

ambient temperature −40 +25 +80 °C
internal cut-off temperature 150 175 200 °C

LOW-level input voltage

0 − 0.4 V

on pins 1, 5 and 8
HIGH-level input voltage note 6

on pin 1 V
on pins 5 and 8 0.55V

(see Section “Current limiting resistors”). Accuracy of the

lim

− 0.4 − V3+ 0.3 V

3

− V3+ 0.3 V

3

2002 Nov 15 10

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1208T

APPLICATION INFORMATION

handbook, full pagewidth

D1

UPOUT/DNIN

V

I

C1

3

L1

LX

4

1582

TEA1208T

6

GNDU/D SYNC SHDWN ILIM

R1

FB

7

R

lim

C2

R2

V

O

handbook, full pagewidth

V

I

Fig.5 Complete application diagram for up conversion.

UPOUT/DNIN

C1

3

TEA1208T

21568

GNDU/D SYNC SHDWNILIM

R

lim

LX

4

FB

7

D1

MCE156

L1

R1

R2

C2

V

O

Fig.6 Complete application diagram for down conversion.

2002 Nov 15 11

MCE157

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1208T

External component selection

INDUCTOR L1
The performanceof the TEA1208T is not very sensitive to

the inductance value. Best efficiency performance over a
wide loadcurrent range is achieved by using e.g. Coilcraft
DO1608C,having an inductanceof10 µH and asaturation
current level of 1.1 A. In case the maximum output current
islower, other inductorsarealso suitablesuchas the small
sized Coilcraft DT1608 range or Murata LQH4N series.

INPUT CAPACITOR C1
The valueof capacitor C1strongly depends on the type of

input source. In general, a 100 µF tantalum capacitor will
do, or a 10 µF ceramic capacitor featuring very low series
resistance (ESR value).

OUTPUT CAPACITOR C2
The value and type of capacitor C2 depend on the

maximum output current and the ripple voltage which is
allowed in the application. Low-ESR tantalum as well as
ceramiccapacitors showgoodresults. The mostimportant
specification of capacitor C2 is its ESR, which mainly
determines the output voltage ripple.

DIODE D1
The Schottky diode is only used a short time during

takeover from N-type power MOSFET and P-type power
MOSFET and vice versa. Therefore, a medium-power
diode such as Philips PRLL5819 is sufficient.

FEEDBACK RESISTORS R1 AND R2
The output voltage is determined by the resistors

R1 and R2. The following conditions apply:

• Use1% accurate SMDtyperesistors only. Incaselarger
body resistors are used, the capacitance on pin 7
(feedback input) will be too large, causing inaccurate
operation.

• Resistors R1 and R2 should have a maximum value of
50 kΩ when connected in parallel. A higher value will
result in inaccurate operation.

Under these conditions, the output voltage can be
calculated by the formula:

V

O

1.24 1

=



×





+

------- -



R2

R1

CURRENT LIMITING RESISTORS
The maximum instantaneous currentis setby the external

resistor R
The connection of resistor R

• At up conversion: resistor R

. The preferred type is SMD, 1% accurate.

lim

differs per mode:

lim

must be connected

lim

between pin 2 (ILIM) and pin 3 (UPOUT/DNIN).

238

The current limiting level is defined by:

• At down conversion: resistor R

lim

must be connected

=

I

----------

Iim

R

Iim

between pin 2 (ILIM) and pin 6 (GND).
The current limiting level is defined by:

270

=

I

----------

Iim

R

Iim

The average inductor current during limited current
operation also depends on the inductance value, input
voltage, output voltage and resistive losses in all
components in the power path. Ensure that
I

lim<Isat

(saturation current) of the inductor.

2002 Nov 15 12

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1208T

PACKAGE OUTLINE

SO8: plastic small outline package; 8 leads; body width 3.9 mm

SOT96-1

y

Z

8

pin 1 index

1

D

c

5

A

2

A

1

4

e

w M

b

p

E

H

E

detail X

A

X

v M

A

Q

(A )

L

p

L

A

3

θ

0 2.5 5 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

OUTLINE
VERSION

SOT96-1

A

max.

1.75

0.069

A1A2A

0.25

1.45

0.10

1.25

0.010

0.057

0.004

0.049

IEC JEDEC EIAJ

076E03 MS-012

0.25

0.01

b

3

p

0.49

0.25

0.36

0.19

0.019

0.0100

0.014

0.0075

UNIT

inches

Notes

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

(1)E(2)

cD

5.0

4.8

0.20

0.19

REFERENCES

4.0

3.8

0.16

0.15

1.27

0.050

2002 Nov 15 13

eHELLpQZywv θ

1.05

1.0

0.4

0.039

0.016

0.7

0.6

0.028

0.024

0.25 0.10.25

0.010.010.041 0.004

EUROPEAN

PROJECTION

6.2

5.8

0.244

0.228

(1)

0.7

0.3

0.028

0.012

ISSUE DATE

97-05-22
99-12-27

o

8

o

0

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1208T

SOLDERING
Introduction to soldering surface mount packages

Thistext gives averybrief insighttoa complex technology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface

mount IC packages. Wave soldering can still be used for
certainsurface mount ICs,butit is notsuitablefor fine pitch
SMDs. In these situations reflow soldering is
recommended.

Reflow soldering

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
tothe printed-circuitboardby screenprinting,stencilling or
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.

Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 220 °C for
thick/large packages, and below 235 °C for small/thin
packages.

Wave soldering

Conventional single wave soldering is not recommended
forsurface mount devices(SMDs)or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

• Use a double-wave soldering method comprising a
turbulent wavewith high upwardpressure followed bya
smooth laminar wave.

• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

• Forpackages with leadsonfour sides, thefootprintmust
be placedat a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Manual soldering

Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.

If wave soldering is used the following conditions must be
observed for optimal results:

2002 Nov 15 14

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1208T

Suitability of surface mount IC packages for wave and reflow soldering methods

PACKAGE

(1)

SOLDERING METHOD

WAVE REFLOW

(2)

BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA not suitable suitable
HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN,

not suitable

(3)

suitable

HVSON, SMS

(4)

PLCC
LQFP, QFP, TQFP not recommended
SSOP, TSSOP, VSO not recommended

, SO, SOJ suitable suitable

(4)(5)

suitable

(6)

suitable

Notes

1. Formore detailedinformationon the BGApackages refer tothe

“(LF)BGAApplication Note

”(AN01026); orderacopy

from your Philips Semiconductors sales office.

2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

.

3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.

4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.

5. Wave soldering is suitable for LQFP, TQFPand QFP packages with apitch (e) larger than 0.8 mm;it is definitely not
suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

6. Wave soldering is suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

2002 Nov 15 15

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1208T

DATA SHEET STATUS

LEVEL

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

I Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describingmultiple typenumbers, thehighest-level product status determines the data sheetstatus.

DEFINITIONS

DISCLAIMERS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition Limiting valuesgiven are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese or atany other conditionsabovethose giveninthe
Characteristics sectionsof the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation or warrantythat suchapplicationswill be
suitable for the specified use without further testing or
modification.

Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expectedto resultin personalinjury. Philips
Semiconductorscustomers using orselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2002 Nov 15 16

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1208T

NOTES

2002 Nov 15 17

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1208T

NOTES

2002 Nov 15 18

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1208T

NOTES

2002 Nov 15 19

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 403502/01/pp20 Date of release: 2002 Nov 15 Document order number: 9397 750 10575

SCA74