Datasheet TEA1206T Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TEA1206T

High efficiency DC/DC converter

Product specification
Supersedes data of 1999 Sep 16
File under Integrated Circuits, IC03

2001 Mar 14

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1206T

FEATURES

• Fully integrated DC/DC converter circuit

• Upconversion or downconversion

• Start-up from 1.8 V input

• Adjustable output voltage

• High efficiency over large load range

• Power handling capability up to 1 A continuous

average current

• 560 kHz switching frequency

• Low quiescent power consumption

• Synchronizes to external 9 to 20 MHz clock

• True current limit for Li-ion battery compatibility

• Up to 100% duty cycle in down mode

• Undervoltage lockout

• Shut-down function

• 8-pin SO package.

APPLICATIONS

• Cellular and cordless phones, Personal Digital
Assistants (PDAs) and others

• Supply voltage source for low-voltage chip sets

• Portable computers

• Battery backup supplies

• Cameras.

GENERAL DESCRIPTION

The TEA1206T (see Fig.1) is a fully integrated DC/DC
converter. Efficient, compact and dynamic power
conversion is achieved using a novel, digitally controlled
concept like Pulse Width Modulation (PWM) or Pulse
FrequencyModulation(PFM),integratedlowR

DSon

CMOS
power switches with low parasitic capacitances, and fully
synchronous rectification.

The device operates at 560 kHz switching frequency
which enables the use of external components with
minimum size. Deadlock is prevented by an on-chip
undervoltage lockout circuit.

Efficient behaviour during short load peaks and
compatibility with Li-ion batteries is guaranteed by an
accurate current limiting function.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Voltage levels

UPCONVERSION; PIN U/D = LOW
V

I

V

O

V

I(start)

input voltage V

I(start)

− 5.50 V
output voltage 2.80 − 5.50 V
start-up input voltage IL< 200 mA 1.40 1.60 1.85 V

DOWNCONVERSION; PIN U/D = HIGH
V

I

V

O

input voltage 2.80 − 5.50 V
output voltage 1.25 − 5.50 V

OUTPUT LOOP
V

fb

feedback voltage 1.19 1.24 1.29 V

Current levels

I

q

quiescent current on pin 3 in

VI= 3.6 V 65 75 85 µA

downconversion configuration

I

shdwn

I

LX

shut-down current − 210µA
maximum continuous current on pin 4 −−1.0 A

2001 Mar 14 2

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1206T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

∆I

lim

Power MOSFETs

R

DSon

Efficiency (see Fig.5)

η

1

η

2

Timing

f

sw

f

sync

t

res

Note

1. The specified efficiency is valid when using a 330 µFoutput capacitor having an ESR of 0.10 Ω (Sprague 595D) and
a 10 µH small size inductor (Coilcraft DT1608C-103).

current limit deviation I

= 0.5 to 5 A

lim

upconversion −17.5 − +17.5 %
downconversion −17.5 − +17.5 %

drain-to-source on-state resistance:

N-type 0.08 0.14 0.20 Ω
P-type 0.10 0.16 0.25 Ω

efficiency in upconversion
configuration

efficiency in downconversion
configuration

VI= 3.6 V; VO= 4.6 V;
L1 = 10 µH; note 1

=1mA − 86 − %

I

L

I

=10mA − 93 − %

L

I

=50mA − 93 − %

L

I

= 100 mA − 93 − %

L

I

= 500 mA − 93 − %

L

I

= 1 A; pulsed − 87 − %

L

VI= 3.6 V; VO= 1.8 V;
L1 = 10 µH; note 1

I

=1mA − 83 − %

L

I

=10mA − 90 − %

L

=50mA − 91 − %

I

L

I

= 100 mA − 87 − %

L

I

= 500 mA − 88 − %

L

I

= 1 A; pulsed − 82 − %

L

switching frequency PWM mode 475 560 645 kHz
synchronization clock input frequency 9 13 20 MHz
response time from standby to P

o(max)

− 25 −µs

ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME DESCRIPTION VERSION

TEA1206T SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1

2001 Mar 14 3

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2001 Mar 14 4

handbook, full pagewidth

BLOCK DIAGRAM

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1206T

LX

ILIM

4

I/V

CONVERTER

2

CURRENT LIMIT
COMPARATORS

TEMPERATURE

PROTECTION

13 MHz

OSCILLATOR

N-type

POWER

FET

I/V

CONVERTER

sense

FET

GND

P-type POWER FET

SYNC
GATE

5681

SYNC U/D

sense FET

SHDWN

START-UP

CIRCUIT

CONTROL LOGIC

AND

MODE GEARBOX

TIME

COUNTER

DIGITAL CONTROLLER

INTERNAL

SUPPLY

TEA1206T

BAND GAP

REFERENCE

3

7

MGM666

UPOUT/DNIN

FB

Fig.1 Block diagram.

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1206T

PINNING

SYMBOL PIN DESCRIPTION

U/D 1 conversion mode selection input
ILIM 2 current limit resistor connection
UPOUT/DNIN 3 upconversion output voltage

downconversion input voltage
LX 4 inductor connection
SYNC 5 synchronization clock input
GND 6 ground
FB 7 feedback input
SHDWN 8 shut-down input

handbook, halfpage

UPOUT/DNIN GND

1

U/D SHDWN

2

ILIM FB

TEA1206T

3
4

LX SYNC

8
7
6
5

MGM667

Fig.2 Pin configuration.

FUNCTIONAL DESCRIPTION
Control mechanism

TheTEA1206TDC/DC converter is able to operate inPFM
(discontinuous conduction) or PWM (continuous
conduction) operating mode. All switching actions are
completely determined by a digital control circuit which
usestheoutput voltage level as itscontrolinput.This novel
digital approach enables the use of a new pulse width and
frequency modulation scheme that ensures optimum
power efficiency over the complete operating range of the
converter.

When high output power is requested, the device will
operate in PWM (continuous conduction) operating mode.
This results in minimum AC currents in the circuit
components and hence optimum efficiency, minimum
costs and low EMC. In this operating mode, the output
voltage is allowed to vary between two predefined voltage
levels. As long as the output voltage stays within this
so-called window, switching continues in a fixed pattern.
When the output voltage reaches one of the window
borders, the digital controller immediately reacts by
adjusting the pulse width and inserting a current step in
such a way that the output voltage stays withinthe window
with higher or lower current capability. This approach
enables very fast reaction to load variations.

Figure 3 shows the converter’s response to asudden load
increase. The upper trace shows the output voltage.
The ripple on top of the DC level is a result of the current
in the output capacitor, which changes in sign twice per
cycle, times the capacitor’s internal Equivalent Series
Resistance (ESR). After each ramp-down of the inductor
current, i.e. when the ESR effect increases the output
voltage, the converter determines what to do in the next
cycle. As soon as more load current is taken from the
output the output voltage starts to decay.

When the output voltage becomes lower than the low limit
of the window, a corrective action is taken by a ramp-up of
theinductor current during amuch longer time. Asa result,
the DC current level is increased andnormal PWM control
can continue. The output voltage (including ESR effect) is
again within the predefined window. Figure 4 depicts the
spread of the output voltage window. The absolute value
ismost dependent on spread, whiletheactual window size
is not affected. For one specific device, the output voltage
will not vary more than 2% typically.

In low output power situations, TEA1206T will switch over
toPFM (discontinuous conduction) operating mode.Inthis
mode, regulation information from earlier PWM mode
operation is used. This results in optimum inductor peak
current levels in PFM mode, which are slightly larger than
the inductor ripple current in PWM mode. As a result, the
transitionbetween PFM and PWMmodeis optimum under
all circumstances. In PFM mode, TEA1206T regulates the
output voltage to the high window limit shown in Fig.3.

Synchronous rectification

For optimum efficiency over the whole load range,
synchronous rectifiers inside TEA1206T ensure that
during the whole second switching phase, all inductor
current will flow through the low-ohmic power MOSFETs.
Special circuitry is included to detect when the inductor
current reaches zero. Following this detection, the digital
controller switches off the power MOSFET and proceeds
with regulation.

2001 Mar 14 5

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1206T

Start-up

Start-up from low input voltage in boost mode is realized
by an independent start-up oscillator that starts switching
the N-type power MOSFET as soon as the voltage at
pin UPOUT/DNINis measured to besufficientlyhigh. The
switch actions of the start-up oscillator will increase the
output voltage. As soon as the output voltage is high
enough for normal regulation, the digital control system
takes over the control of the power MOSFETs.

Undervoltage lockout

As a result of too high load or disconnection of the input
power source, the output voltage can drop so low that
normal regulation cannot be guaranteed. In that case, the
device switches back to start-up mode. If the output
voltage drops down even further, switching is stopped
completely.

Shut-down

When the shut-down input is made HIGH, the converter
disablesbothpowerswitchesandthepower consumption
is reduced to a few microamperes.

Power switches

The power switches in the IC are one N-type and one
P-type power MOSFET, having a typical drain-to-source
resistance of 0.14 Ω and 0.16 Ω respectively. The
maximum average current in the power switches is 1.0 A.

External synchronization

If an external high-frequency clock is applied to the
synchronization clock input, the switching frequency in
PWM mode will be exactly that frequency divided by 22.
In the PFM mode, the switching frequency is always
lower. The quiescent current of the device increases
when external clock pulses are applied. In case no
external synchronization is necessary, the
synchronization clock input must be connected to ground
level.

Behaviour at input voltage exceeding the specified
range

Ingeneral,aninput voltage exceeding the specified range
is not recommended since instability may occur. There
are two exceptions:

• Upconversion:ataninput voltage higher than the target
output voltage, but up to 5.5 V, the converter will stop
switching and the internal P-type power MOSFET will
be conducting. The output voltage will equal the input
voltage minus someresistive voltage drop. The current
limiting function is not active.

• Downconversion: when the input voltage is lower than
the target output voltage, but higher than 2.8 V, the
P-type power MOSFET will stay conducting resulting in
an output voltage being equal to the input voltage
minus some resistive voltage drop. The current limiting
function remains active.

Temperature protection

When the device operates in PWM mode and the die
temperature gets too high (typically 175 °C) the converter
stops operating. It resumes operation when the die
temperature falls below 175 °C again. As a result,
switchingbetweenthe on and off statewilloccur.It should
be noted thatin the event of a device temperature around
the cut-off limit, the application differs strongly from
maximum specifications.

Current limiters

Ifthecurrent in one of the powerswitchesexceedsits limit
in the PWM mode, the current ramp is stopped
immediately, and the next switching phase is entered.
Current limiting is required to enable optimal use of
energy in Li-ion batteries, and to keep power conversion
efficient during temporary high loads. Furthermore,
current limiting protects the IC against overload
conditions, inductor saturation, etc. The current limiting
level is set by an external resistor.

2001 Mar 14 6

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1206T

handbook, full pagewidth

load increase

V

o

I

L

start corrective action

time

time

high window limit

low window limit

MGK925

Fig.3 Response to load increase.

handbook, full pagewidth

V

O (typ)

V

wdw(high)

2%

V

wdw(low)

typical situation

maximum positive spread of V

+4%

V

wdw(high)

2%

V

wdw(low)

−4%
V

maximum negative spread of V

Fig.4 Spread of location of output voltage window.

2001 Mar 14 7

O

wdw(high)

V

wdw(low)

2%

upper specification limit

lower specification limit

O

MGU269

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1206T

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

n

T

j

T

amb

T

stg

V

es

Note

1. Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor.

THERMAL CHARACTERISTICS

voltage on any pin shut-down mode −0.2 +6.5 V

operating mode −0.2 +5.9 V
junction temperature −25 +150 °C
ambient temperature −40 +80 °C
storage temperature −40 +150 °C
electrostatic handling voltage pins 1, 2, 3, 5, 6 and 8; note 1 −3000 +3000 V

pins 4 and 7; note 1 −1000 +1000 V

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

thermal resistance from junction to ambient in free air 150 K/W

QUALITY SPECIFICATION

In accordance with

“SNW-FQ-611 part E”

.

2001 Mar 14 8

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1206T

CHARACTERISTICS

T

= −40 to +80 °C; all voltages with respect to ground; positive currents flow into theIC; unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Voltage levels

U

PCONVERSION; pin U/D = LOW

V

I

V

O

V

I(start)

V

I(uvlo)

DOWNCONVERSION; PIN U/D = HIGH
V

I

V

O

OUTPUT LOOP
V

fb

∆V

wdw

Current levels

I

q

I

shdwn

I

LX

∆I

lim

Power MOSFETs

R

DSon

Efficiency (see Fig.5)

η

1

input voltage V

I(start)

− 5.50 V
output voltage 2.80 − 5.50 V
start-up input voltage IL< 200 mA 1.40 1.60 1.85 V
undervoltage lockout input voltage note 1 1.50 2.10 2.50 V

input voltage note 2 2.80 − 5.50 V
output voltage 1.25 − 5.50 V

feedback voltage 1.19 1.24 1.29 V
output voltage window PWM mode 1.5 2.0 3.0 %

quiescent current on pin 3 in

V3= 3.6 V; note 3 65 75 85 µA

downconversion configuration
current in shut-down mode − 210µA
maximum continuous current on pin 4 −−1.0 A
current limit deviation I

upconversion configuration −17.5 − +17.5 %

= 0.5 to 5.0 A;

lim

note 4

downconversion configuration −17.5 − +17.5 %

drain-to-source on-state resistance

N-type 0.08 0.14 0.20 Ω
P-type 0.10 0.16 0.25 Ω

efficiency in upconversion configuration VI= 3.6 V; VO= 4.6 V;

L1 = 10 µH; note 5

I

=1mA − 86 − %

L

I

=10mA − 93 − %

L

I

=50mA − 93 − %

L

= 100 mA − 93 − %

I

L

= 500 mA − 93 − %

I

L

I

= 1 A; pulsed − 87 − %

L

2001 Mar 14 9

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1206T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

η

2

Timing

f

sw

f

sync

t

res

Temperature

T

amb

T

max

Digital levels

V

lL

V

IH

Notes

1. Theundervoltage lockout voltage showswide specification limits sinceitdecreases at increasing temperature.When
the temperature increases, the minimum supply voltage of the digital control part of the IC decreases and therefore
the correct operation of this function is guaranteed over the whole temperature range.

2. When VI is lower than the target output voltage but higher than 2.8 V, the P-type power MOSFET will remain
conducting (100% duty cycle), resulting in VO following VI.

3. V3 is the voltage on pin 3 (UPOUT/DNIN).

4. The current limit is defined by an external resistor R
current limit increases in proportion to the programmed current limiting level.

5. The specified efficiency is valid when using a 330 µFoutput capacitor having an ESR of 0.10 Ω (Sprague 595D) and
a 10 µH small size inductor (Coilcraft DT1608C-103).

6. If the applied HIGH-level voltage is less than V3− 1 V, the quiescent current (lq) of the device will increase.

efficiency in downconversion
configuration

VI= 3.6 V; VO= 1.8 V;
L1 = 10 µH; note 5

I

=1mA − 83 − %

L

I

=10mA − 90 − %

L

I

=50mA − 91 − %

L

I

= 100 mA − 87 − %

L

= 500 mA − 88 − %

I

L

I

= 1 A; pulsed − 82 − %

L

switching frequency PWM mode 475 560 645 kHz
synchronization clock input frequency 9 13 20 MHz
response time from standby to P

o(max)

− 25 −µs

ambient temperature −40 +25 +80 °C
internal cut-off temperature 150 175 200 °C

LOW-level input voltage

0 − 0.5 V

on pins 1, 5 and 8
HIGH-level input voltage note 6

on pin 1 V
on pins 5 and 8 0.55V

(see Section “Current limiting resistors R

lim

− 0.4 − V3+ 0.3 V

3

− V3+ 0.3 V

3

”). Accuracy of the

lim

2001 Mar 14 10

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1206T

handbook, full pagewidth

100

efficiency

(%)

90

80

70

60

11010

(1) Represents the curve for upconversion from VI= 3.6 to VO= 4.6 V. The solid line indicates PFM and the dashed line indicates PWM.
(2) Represents the curve for downconversion from VI= 3.6 to VO= 1.8 V. The solid line indicates PFM and the dashed line indicates PWM.

(1)

(2)

2

IL (mA)

MGM668

3

10

Fig.5 Efficiency as a function of load current IL.

2001 Mar 14 11

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1206T

APPLICATION INFORMATION

handbook, full pagewidth

D1

UPOUT/DNIN

V

I

C1

3

L1

LX

4

1582

TEA1206T

6

GNDU/D SYNC SHDWN ILIM

R1

FB

7

R

lim

C2

R2

V

O

handbook, full pagewidth

V

I

Fig.6 Complete application for upconversion.

UPOUT/DNIN

C1

3

TEA1206T

21568

R

lim

MGM670

D1

L1

R1

R2

C2

V

O

LX

4

FB

7

GNDU/D SYNC SHDWNILIM

Fig.7 Complete application for downconversion.

2001 Mar 14 12

MGM671

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1206T

External component selection

INDUCTOR L1
The performance of the TEA1206T is not very sensitive to

the inductance value. Best efficiency performance over a
wide load current range is achieved by using e.g.
TDK SLF7032-6R8M1R6, having an inductance of 6.8 µH
and a saturation current level of 1.6 A. In case the
maximum output current is lower, other inductors are also
suitable such as the small sized Coilcraft DT1608 range.

INPUT CAPACITOR C1
The value of capacitor C1 strongly depends on the type of

input source. In general, a 100 µF tantalum capacitor will
do, or a 10 µF ceramic capacitor featuring very low series
resistance (ESR value).

OUTPUT CAPACITOR C2
The value and type of capacitor C2 depend on the

maximum output current and the ripple voltage which is
allowed in the application. Low-ESR tantalum as well as
ceramiccapacitors show good results. Themostimportant
specification of capacitor C2 is its ESR, which mainly
determines the output voltage ripple.

CURRENT LIMITING RESISTORS R

LIM

The maximum instantaneous current is set bythe external
resistor R
The connection of resistor R

• Upconversion configuration: resistor R

. The preferred type is SMD, 1% accurate.

lim

differs per mode:

lim

must be

lim

connected between pin 2 (ILIM) and
pin 3 (UPOUT/DNIN).

440

The current limiting level is defined by:

• Downconversion configuration: resistor R

I

Iim

lim

=

---------­R

Iim

must be

connected between pin 2 (ILIM) and pin 6 (GND).

650

The current limiting level is defined by:

=

I

----------

Iim

R

Iim

The average inductor current during limited current
operation also depends on the inductance value, input
voltage, output voltage and resistive losses in all
components in the power path. Ensure that
I

lim<Isat

(saturation current) of the inductor.

DIODE D1
The Schottky diode is only used a short time during

takeover from N-type power MOSFET and P-type power
MOSFET and vice versa. Therefore, a medium-power
diode such as Philips PRLL5819 is sufficient.

FEEDBACK RESISTORS R1 AND R2
The output voltage is determined by the resistors

R1 and R2. The following conditions apply:

• Use1%accurate SMD type resistors only. In caselarger

body resistors are used, the capacitance on pin 7
(feedback input) will be too large, causing inaccurate
operation.

• Resistors R1 and R2 should have a maximum value of

50 kΩ when connected in parallel. A higher value will
result in inaccurate operation.

Under these conditions, the output voltage can be

R1

calculated by the formula:

V

O

1.24 1

=



×





+

------- -



R2

2001 Mar 14 13

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1206T

PACKAGE OUTLINE

SO8: plastic small outline package; 8 leads; body width 3.9 mm

SOT96-1

y

Z

8

pin 1 index

1

e

D

c

5

A

2

A

1

4

w M

b

p

E

H

E

detail X

A

X

v M

A

Q

(A )

L

p

L

A

3

θ

0 2.5 5 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

OUTLINE

VERSION

SOT96-1

A

max.

1.75

0.069

A1A2A

0.25

1.45

0.10

1.25

0.010

0.057

0.004

0.049

IEC JEDEC EIAJ

076E03 MS-012

0.25

0.01

b

3

p

0.49

0.25

0.36

0.19

0.019

0.0100

0.014

0.0075

UNIT

inches

Notes

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

(1)E(2)

cD

5.0

4.8

0.20

0.19

REFERENCES

4.0

3.8

0.16

0.15

1.27

0.050

2001 Mar 14 14

eHELLpQZywv θ

1.05

1.0

0.4

0.039

0.016

0.7

0.6

0.028

0.024

0.25 0.10.25

0.010.010.041 0.004

EUROPEAN

PROJECTION

6.2

5.8

0.244

0.228

(1)

0.7

0.3

0.028

0.012

ISSUE DATE

97-05-22
99-12-27

o

8

o

0

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1206T

SOLDERING
Introduction to soldering surface mount packages

Thistextgives a very brief insighttoacomplex technology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface

mount IC packages. Wave soldering can still be used for
certainsurfacemount ICs, but it is not suitableforfinepitch
SMDs. In these situations reflow soldering is
recommended.

Reflow soldering

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
tothe printed-circuit board byscreenprinting, stencilling or
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.

Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 220 °C for
thick/large packages, and below 235 °C for small/thin
packages.

Wave soldering

Conventional single wave soldering is not recommended
forsurfacemount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

• Forpackageswith leads on four sides, the footprintmust
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement andbefore soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Manual soldering

Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.

If wave soldering is used the following conditions must be
observed for optimal results:

2001 Mar 14 15

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1206T

Suitability of surface mount IC packages for wave and reflow soldering methods

PACKAGE

WAVE REFLOW

(1)

BGA, HBGA, LFBGA, SQFP, TFBGA not suitable suitable

SOLDERING METHOD

HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, SMS not suitable

(3)

PLCC

, SO, SOJ suitable suitable
LQFP, QFP, TQFP not recommended
SSOP, TSSOP, VSO not recommended

(2)

(3)(4)
(5)

suitable

suitable
suitable

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

.

2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.

4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

2001 Mar 14 16

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1206T

DATA SHEET STATUS

DATA SHEET STATUS

Objective specification Development This data sheet contains the design target or goal specifications for

Preliminary specification Qualification Thisdata sheet contains preliminary data, and supplementary data will be

Product specification Production This data sheet contains final specifications. Philips Semiconductors

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseor at any otherconditionsabovethose given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythat such applications will be
suitable for the specified use without further testing or
modification.

PRODUCT

STATUS

DEFINITIONS

product development. Specification may change in any manner without
notice.

published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.

reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorselling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseof any of these products, conveys nolicenceortitle
under any patent, copyright, or mask work right to these
products,and makes no representations orwarrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

(1)

2001 Mar 14 17

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1206T

NOTES

2001 Mar 14 18

Philips Semiconductors Product specification

High efficiency DC/DC converter TEA1206T

NOTES

2001 Mar 14 19

Philips Semiconductors – a w orldwide compan y

Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone], Fax. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 7 - 9 Rue du Mont Valérien, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
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Tel. [phone], Fax. [phone]
Hungary: Philips Hungary Ltd., H-1119 Budapest, Fehervari ut 84/A,

Tel: [phone], Fax: [phone]
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: PT Philips Development Corporation,Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. [phone] ext. 2501, Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. [phone], Fax. [phone]

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. [phone], Fax [phone]

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. [phone], Fax [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. [phone], Fax. [phone]

South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone] Fax. [phone]

Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone], Fax. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. [phone]

© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

2001

Internet: http://www.semiconductors.philips.com

72

Printed in The Netherlands 403502/03/pp20 Date of release: 2001 Mar 14 Document order number: 9397 750 07779