Datasheet TEA1201TS Datasheet (Philips)

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TEA1201TS

0.95 V starting basic power unit

Product specification 2002 Jun 06

Philips Semiconductors Product specification

0.95 V starting basic power unit TEA1201TS

CONTENTS

1 FEATURES
2 APPLICATIONS
3 GENERAL DESCRIPTION
4 ORDERING INFORMATION
5 QUICK REFERENCE DATA
6 BLOCK DIAGRAM
7 PINNING INFORMATION

7.1 Pinning

7.2 Pin description
8 FUNCTIONAL DESCRIPTION

8.1 Control mechanism

8.2 Synchronous rectification

8.3 Start-up

8.4 Undervoltage lockout

8.5 Shut-down

8.6 Power switches

8.7 Temperature protection

8.8 Current limiters

8.9 External synchronization and PWM-only mode

8.10 Behaviour at input voltage exceeding the
specified range

8.11 Control of the additional switch

8.12 Low battery detector

9 LIMITING VALUES
10 THERMAL CHARACTERISTICS
11 QUALITY SPECIFICATION
12 CHARACTERISTICS
13 APPLICATION INFORMATION

13.1 External component selection

14 PACKAGE OUTLINE
15 SOLDERING

15.1 Introduction to soldering surface mount
packages

15.2 Reflow soldering

15.3 Wave soldering

15.4 Manual soldering

15.5 Suitability of surface mount IC packages for
wave and reflow soldering methods

16 DATA SHEET STATUS
17 DEFINITIONS
18 DISCLAIMERS

2002 Jun 06 2

Philips Semiconductors Product specification

0.95 V starting basic power unit TEA1201TS

1 FEATURES

• Complete DC-to-DC converter circuit, one current

switch and a battery low detector

• Configurable for 1, 2 or 3-cell Nickel-Cadmium (NiCd)

or Nickel Metal Hydride (NiMH) batteries and 1 Lithium
Ion (Li-Ion) battery

• Guaranteed DC-to-DC converter start-up from 1-cell

NiCd or NiMH battery, even with a load current

• Upconversion or downconversion

• Internal power MOSFETs featuring a low R

DSon

of

approximately 0.1 Ω

• Synchronous rectification for high efficiency

• Soft start

• PWM-only operating option

• Stand-alone low battery detector requires no additional

supply voltage

• Low battery detection level at 0.90 V, externally

adjustable to a higher level

• Adjustable output voltages

• Shut-down function

• Small outline package

• Advanced 0.6 µm BICMOS process.

2 APPLICATIONS

• Cellular phones

• Cordless phones

• Personal Digital Assistants (PDAs)

• Portable audio players

• Pagers

• Mobile equipment.

3 GENERAL DESCRIPTION

The TEA1201TS is a fully integrated battery power unit
including ahigh-efficiency DC-to-DC converter which runs
from a 1-cell NiCd or NiMH battery, a currentswitch and a
lowbattery detector. Thecircuit can bearrangedin several
ways to optimize the application circuit of a power supply
system. Therefore, the DC-to-DC converter can be
arranged for upconversionor downconversionand the low
battery detector can be configured for several types of
batteries. Accurate low battery detection is possible while
all other blocks are switched off.

The DC-to-DC converter features efficient, compact and
dynamic power conversion using a digital control concept
comparable with Pulse Width Modulation (PWM) and
Pulse Frequency Modulation (PFM), integrated CMOS
power switches with a very low R

DSon

and fully

synchronous rectification.
The device operates at a switching frequency of 600 kHz

which enables the use of external components with
minimum size. The switching frequency can be
synchronized to an external high frequency clock signal.
Optionally, the device can be kept in PWM control mode
only. Deadlock is prevented by an on-chip undervoltage
lockout circuit.

Active current limiting enables efficient conversion in
pulsed-load systems such as Global System for Mobile
communication (GSM) and Digital Enhanced Cordless
Telecommunications (DECT).

The switch canbe usedto controlthe connection of (a part
of) the output load. It shows a low pin-to-pin resistance of
500 mΩ.

The low battery detector has a built-in detection level
which is optimum for a 1-cell NiCd or NiMH battery.

4 ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

PACKAGE

TEA1201TS SSOP16 plastic shrink small outline package; 16 leads; body width 4.4 mm SOT369-1

2002 Jun 06 3

Philips Semiconductors Product specification

0.95 V starting basic power unit TEA1201TS

5 QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

DC-to-DC converter

UPCONVERSION
V

I(up)

V

O(up)

V

I(start)

V

O(uvlo)

DOWNCONVERSION
V

I(dwn)

V

O(dwn)

CURRENT LEVELS
I

q(DCDC)

I

shdwn

I

LX(max)

∆I

lim

POWER MOSFETS
R

DSon(N)

R

DSon(P)

EFFICIENCY
η efficiency upconversion VOup to 3.3 V; see Fig.9

TIMING
f

sw

f

i(sync)

t

start

Switch

R

DSon

I

O(max)

General characteristics

V

ref

input voltage V
output voltage V

I(start)
O(uvlo)

− 5.50 V

− 5.50 V

start-up input voltage IL< 10 mA 0.93 0.96 1.00 V
undervoltage lockout voltage 2.0 2.2 2.4 V

input voltage V

O(uvlo)

− 5.50 V

output voltage 1.30 − 5.50 V

quiescent current at pin

− 110 −µA

UPOUT/DNIN
current in shut-down mode V
maximum continuous current at

LBI1=VI(up)

T

=80°C −−1.0 A

amb

= 1.2 V − 65 −µA

pins LX1 and LX2
current limit deviation I

set to 1.0 A

lim

upconversion −12 − +12 %
downconversion −12 − +12 %

drain-to-source on-state

Tj=27°C; IDS= 100 mA − 110 200 mΩ

resistance NFET
drain-to-source on-state

Tj=27°C; IDS= −100 mA − 125 250 mΩ

resistance PFET

V

= 1.2 V; IL= 100 mA − 84 − %

I

V

= 2.4 V; IL=10mA − 92 − %

I

switching frequency PWM mode 480 600 720 kHz
synchronization clock input

6 1320MHz

frequency
start-up time − 10 − ms

drain-to-source resistance in
switched-on state

maximum output current in

V

O(up)=VI(down)

V

< 0.4 V

FB1

V

< 0.4 V −−0.40 A

FB1

=5V;

− 500 750 mΩ

switched-on state

reference voltage 1.165 1.190 1.215 V

2002 Jun 06 4

Philips Semiconductors Product specification

Philips Semiconductors Product specification

0.95 V starting basic power unit TEA1201TS

0.95 V starting basic power unit TEA1201TS

6 BLOCK DIAGRAM

SHDWN0

TEA1201TS

FB1

OUT1

7

6

DETECTOR

LOW BATTERY

UPOUT/DNIN

3, 4

SUPPLY

INTERNAL

P-type

POWER FET

GND

8

CIRCUIT

START-UP

sense FET

FB0

12

ref

V

AND

MODE GEARBOX

CONTROL LOGIC

ref

COMPARATOR

CURRENT LIMIT

V

FET

sense

ref

V

11

VOLTAGE

REFERENCE

TIME

COUNTER

DIGITAL CONTROLLER

GATE

SYNC

13 MHz

PROTECTION

TEMPERATURE

OSCILLATOR

MGW787

SHDWN0

Fig.1 Block diagram.

1413 2 15

SYNC/PWM U/D

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2002 Jun 06 5

2002 Jun 06 5

9

LBI1

handbook, full pagewidth

10

LBO

GND0

FET

N-type

16

LX2

5

ILIM

1

LX1

POWER

Philips Semiconductors Product specification

0.95 V starting basic power unit TEA1201TS

7 PINNING INFORMATION

7.1 Pinning

handbook, halfpage

SHDWN0
UPOUT/DNIN
UPOUT/DNIN

LX1

ILIM

OUT1

FB1

GND

1
2
3
4

TEA1201TS

5
6
7
8

MGW788

LX2

16

U/D

15

SYNC/PWM

14

GND0

13

FB0

12

V

11

ref

LBO

10

LBI1

9

Fig.2 Pin configuration.

7.2 Pin description
Table 1 SSOP16 package

SYMBOL PIN DESCRIPTION

LX1 1 inductor connection 1
SHDWN0 2 DC-to-DC converter shut-down input
UPOUT/DNIN 3 up mode: DC-to-DC converter output; down mode: DC-to-DC converter input
UPOUT/DNIN 4
ILIM 5 current limiting resistor connection
OUT1 6 switch output
FB1 7 switch control input
GND 8 internal supply ground
LBI1 9 low battery detector input 1
LBO 10 low battery detector output
V

ref

11 reference voltage
FB0 12 DC-to-DC converter feedback input
GND0 13 DC-to-DC converter ground
SYNC/PWM 14 synchronization clock input or PWM-only selection input
U/D 15 conversion mode selection input
LX2 16 inductor connection 2

2002 Jun 06 6

Philips Semiconductors Product specification

0.95 V starting basic power unit TEA1201TS

8 FUNCTIONAL DESCRIPTION

8.1 Control mechanism

The TEA1201TSDC-to-DC converter isable to operatein
PFM (discontinuous conduction) or PWM (continuous
conduction) operating mode. All switching actions are
completely determined by a digital control circuit which
usesthe output voltagelevelas its controlinput.This novel
digital approach enables the use of a new pulse widthand
frequency modulation scheme, which ensures optimum
power efficiency over the complete range of operation of
the converter.

When high output power is requested, the device will
operate in PWM (continuousconduction) operatingmode.
This results in minimum AC currents in the circuit
components and hence optimum efficiency, minimum
costs and low EMC. In this operating mode, the output
voltage isallowed to varybetween two predefined voltage
levels. As long as the output voltage stays within this
so-called window, switching continues in a fixed pattern.

When the output voltage reaches one of the window
borders, the digital controller immediately reacts by
adjusting the pulse width and inserting a current step in
such a waythat theoutput voltagestays within the window
with higher or lower current capability. This approach
enables very fast reaction to load variations. Figure 3
shows the response of the converter to a sudden load
increase. The upper trace shows the output voltage.

The ripple on top of the DC level is a result of the current
in the output capacitor, which changes in sign twice per
cycle, times the internal Equivalent Series Resistance
(ESR) of the capacitor. After each ramp-down of the
inductor current, i.e. when the ESR effect increases the
output voltage, the converter determines what to do in the
next cycle. As soon as more loadcurrent is taken from the
output the output voltage starts to decay.

Figure 4 shows the spread of the output voltage window.
The absolute value is mostly dependent on spread, while
the actual window size (V
affected. For one specific device, the output voltage will
not vary more than 2% (typical value).

In lowoutput power situations,the TEA1201TS willswitch
over to PFM (discontinuous conduction) operating mode.
In this mode, regulation information from an earlier PWM
operating mode is used. This results in optimum inductor
peak current levels in the PFM mode, which are slightly
larger than the inductor ripple current in the PWM mode.
As a result,the transitionbetween PFMand PWM mode is
optimum under all circumstances. In the PFM mode the
TEA1201TS regulates the output voltage to the high
window limit as shown in Fig.3.

8.2 Synchronous rectification

For optimum efficiency over the whole load range,
synchronous rectifiers inside the TEA1201TS ensure that
during the whole second switching phase, all inductor
current will flow through the low-ohmic power MOSFETs.
Special circuitry is included which detects when the
inductorcurrent reaches zero.Followingthis detection, the
digital controller switches off the power MOSFET and
proceeds with regulation.

8.3 Start-up

Start-up from low input voltage in the boost mode is
realized by anindependent start-uposcillator, which starts
switching the N-type power MOSFET as soon as the
low-battery detector detects a sufficiently high voltage.
The inductor current is limited internally to ensure
soft-starting. The switch actions of the start-up oscillator
will increase the output voltage. As soon as the output
voltage is high enough for normal regulation, the digital
control system takes control over the power MOSFETs.

wdw(high)

− V

wdw(low)

) is not

When theoutput voltage becomes lower than the low limit
of the window, acorrective action is taken bya ramp-upof
theinductor currentduring a muchlonger time. Asa result,
the DC current level is increased and normal PWM control
can continue. The output voltage (including ESR effect) is
again within the predefined window.

2002 Jun 06 7

8.4 Undervoltage lockout

As a result of too high a load or disconnection of the input
power source, the output voltage can drop so low that
normal regulation cannot beguaranteed. In this event, the
device switches back to start-up mode. If the output
voltage drops even further, switching is stopped
completely.

Philips Semiconductors Product specification

0.95 V starting basic power unit TEA1201TS

handbook, full pagewidth

load increase

V

o

I

L

start corrective action

time

time

high window limit

low window limit

MGK925

Fig.3 Response to load increase.

handbook, full pagewidth

V

wdw(high)

V

2%

O

V

wdw(low)

typical

situation

+2%

V

wdw(high)

V

wdw(low)

maximum

positive spread

Fig.4 Output voltage window spread.

2002 Jun 06 8

2%

−2%

V

wdw(high)

2%

V

wdw(low)

maximum

negative spread

MGW789

Philips Semiconductors Product specification

0.95 V starting basic power unit TEA1201TS

8.5 Shut-down

When the shut-down input is set HIGH, the DC-to-DC
converter disables both switches and power consumption
is reduced to a few microamperes.

8.6 Power switches

The power switches in the IC are one N-type and one
P-type power MOSFET, both having a typical
drain-to-source resistance of 100 mΩ. The maximum
average current in the power switches is 1.0 A at
T

=80°C.

amb

8.7 Temperature protection

When the DC-to-DC converter operates in the PWM
mode, and the die temperature gets too high (typical value
is 190 °C), the converter and the switch stop operating.
They resume operation when the die temperature falls
below 90 °C again. As a result, low frequency cycling
between the on and off state will occur. It should be noted
that in the eventof device temperatures at thecut-off limit,
the application differs strongly from maximum
specifications.

8.8 Current limiters

If the current in one of the power switches exceeds the
programmed limit in the PWM mode, the current ramp is
stopped immediately and the next switching phase is
entered. Current limiting is required to keep power
conversion efficient during temporary high loads.
Furthermore, current limiting protects the IC against
overload conditions, inductor saturation, etc.

The current limiting level is set by an external resistor
whichmust be connectedbetweenpin ILIM and groundfor
downconversion, or between pins ILIM and UPOUT/DNIN
for upconversion.

8.9 External synchronization and PWM-only mode

If an external high-frequency clock or a HIGH level is
applied to pin SYNC/PWM, the TEA1201TS will use PWM
regulation independent of the load applied.

In the event of a high-frequency clock being applied, the
switching frequency in the PWM mode will be exactly that
frequency divided by 22. In the PWM mode the quiescent
current of the device increases.

8.10 Behaviour at input voltage exceeding the
specified range

In general, an inputvoltage exceeding the specified range
isnot recommendedsince instability mayoccur. Thereare
two exceptions:

1. Upconversion: at an input voltage higher than the

targetoutput voltage, butup to 5.5 V,the converter will
stop switching and the external Schottky diode will
take over. The output voltage will equal the input
voltageminus thediode voltage drop. Since allcurrent
flows through the external diode in this situation, the
current limiting function is not active.

In the PWM mode, the P-type power MOSFET is
always on when the input voltage exceeds the target
output voltage. The internal synchronous rectifier
ensures that the inductor current does not fall below
zero. As a result, the achieved efficiency is higher in
this situation than standard PWM-controlled
converters achieve.

2. Downconversion: when the inputvoltage is lower than

the target output voltage, but higher than 2.2 V, the
P-type power MOSFET will stay conducting resulting
in an output voltage being equal to the input voltage
minussome resistive voltagedrop. Thecurrentlimiting
function remains active.

8.11 Control of the additional switch

The switch will be in the on-state when its feedback input
is connected to ground. When the feedback input is higher
than 2 V, the power FET will be high-ohmic. The switch
always turns to the high-ohmic state when the shutdown
input is made HIGH.

8.12 Low battery detector

The low battery detector is an autonomous circuit which
can work at an input voltage down to 0.90 V. It is always
on, evenwhen all other blocks are in the shut-down mode.

The low battery input (pin LBI1) is tuned to accept a 1-cell
NiCd or NiMH battery voltage directly. Hysteresis is
included for correct operation.

The output of the low battery detector on pin LBO is an
open-collector output.The output is high (i.e. no current is
sunk by the collector) when the input voltage of the
detector is below the lower detection level.

In the event that no external synchronization or PWM
mode selection is necessary, pin SYNC/PWM must be
connected to ground.

2002 Jun 06 9

Philips Semiconductors Product specification

0.95 V starting basic power unit TEA1201TS

9 LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

n

T

T

amb

T

stg

V

es

Notes

1. ESD specification is in accordance with the JEDEC standard:
a) Human Body Model (HBM) tests are carried out by discharging a 100 pF capacitor through a 1.5 kΩ series

b) Machine Model (MM) tests are carried out by discharging a 200 pF capacitor via a 0.75 µH series inductor.

2. Exception is pin ILIM: 1000 V HBM and 100 V MM.

voltage on any pin shut-down mode −0.2 +6.5 V

operating mode −0.2 +5.5 V

junction temperature −40 +150 °C

j

ambient temperature −20 +80 °C
storage temperature −40 +125 °C
electrostatic handling voltage notes 1 and 2 Class II V

resistor.

10 THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

thermal resistance from junction to ambient in free air 143 K/W

11 QUALITY SPECIFICATION

In accordance with

“SNW-FQ-611D”

.

2002 Jun 06 10

Philips Semiconductors Product specification

0.95 V starting basic power unit TEA1201TS

12 CHARACTERISTICS

T

= −20 to +80 °C; all voltages are measured with respect to ground; positive currents flow into theIC; unless

amb

otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
DC-to-DC converter

PCONVERSION; PIN U/D = LOW

U
V

I(up)

V

O(up)

V

I(start)

V

O(uvlo)

OWNCONVERSION; PIN U/D = HIGH

D
V

I(dwn)

V

O(dwn)

input voltage V
output voltage V
start-up input voltage IL< 10 mA 0.93 0.96 1.00 V
undervoltage lockout voltage note 1 2.0 2.2 2.4 V

input voltage note 2 V

output voltage 1.30 − 5.50 V
REGULATION
∆V

O(wdw)

output voltage window size as a function

PWM mode 1.5 2.0 2.5 %

of output voltage
CURRENT LEVELS
I

q(DCDC)

I

shdwn

I

lim(max)

∆I

lim

quiescent current at pin UPOUT/DNIN note 3 − 110 −µA

current in shut-down mode V

LBI1=VI(up)

= 1.2 V − 65 −µA
maximum current limit − 5 − A
current limit deviation I

set to 1.0 A; note 4

lim

upconversion −12 − +12 %
downconversion −12 − +12 %

I

LX(max)

maximum continuous current at pins LX1

T

=80°C −−1.0 A

amb

and LX2

POWER MOSFETS
R

DSon(N)

R

DSon(P)

drain-to-source on-state resistance NFET Tj=27°C; IDS= 100 mA − 110 200 mΩ
drain-to-source on-state resistance PFET Tj=27°C; IDS= −100 mA − 125 250 mΩ

EFFICIENCY
η efficiency upconversion VOupto 3.3 V;see note 5

and Fig.9

V

= 1.2 V; IL= 100 mA − 84 − %

I

V

= 2.4 V; IL=10mA − 92 − %

I

TIMING
f

sw

f

i(sync)

t

start

switching frequency PWM mode 480 600 720 kHz
synchronization clock input frequency 6 13 20 MHz
start-up time note 6 − 10 − ms

DIGITAL INPUT LEVELS
V

lL(n)

LOW-level input voltage on all digital pins 0 − 0.4 V

I(start)
O(uvlo)

O(uvlo)

− 5.50 V

− 5.50 V

− 5.50 V

2002 Jun 06 11

Philips Semiconductors Product specification

0.95 V starting basic power unit TEA1201TS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

IH(n)

Switch: see Fig.5
R

DSon

I

O(max)

Low battery detector

I

LBD

t

t(HL)

DETECTION INPUT PIN LBI1
V

det

V

hys

TC

Vdet

TC

Vhys

DETECTION OUTPUT PIN LB0
I

O(sink)

General characteristics

V

ref

I

q

T

amb

T

max

Notes

1. The undervoltage lockout level shows wide specification limits since it decreases at increasing temperature. When
the temperature increases, the minimum supply voltage of the digital control part of the IC decreases and therefore
thecorrect operationof this functionis guaranteedover the wholetemperature range.The undervoltage lockoutlevel
is measured at pin UPOUT/DNIN.

2. When VI is lower than the target output voltage but higher than 2.2 V, the P-type power MOSFET will remain
conducting (duty factor is 100%), resulting in VO following VI.

3. The quiescent current is specified as the input current in the upconversion configuration at VI= 1.20 V and
VO= 3.30 V, using L1 = 6.8 µH, R1 = 150 kΩ and R2 = 91 kΩ.

4. The current limit is defined by resistor R10. This resistor must have a tolerance of 1%.

5. The specified efficiency is valid when using an output capacitor having an ESR of 0.1 Ω and an inductor of 6.8 µH
with an ESR of 0.05 Ω and a sufficient saturation current level.

6. The specified start-up time is the time between the connection of a 1.20 V input voltage source and the moment the
output reaches 3.30 V. The output capacitance equals 100 µF, the inductance equals 6.8 µH and no load is present.

7. V4is the voltage at pin UPOUT/DNIN. If the applied HIGH-level voltage is less than V4− 1 V, the quiescent current
of the device will increase.

HIGH-level input voltage note 7

on pins SYNC/PWM, SHDWN0

0.55V

− V4+ 0.3 V

4

and SHDWN2
all other digital input pins V

drain-to-source resistance in switched-on
state

maximum output current in switched-on

V

O(up)=VI(dwn)

V

< 0.4 V

FB1

V

< 0.4 V −−0.40 A

FB1

=5V;

− 0.4 − V4+ 0.3 V

4

− 500 750 mΩ

state

supply current of detector VI= 0.9 V − 20 −µA
transition time falling V

low battery detection level falling V

bat

bat

− 2 −µs

0.87 0.90 0.93 V
low battery detection hysteresis − 20 − mV
temperature coefficient of detection level − 0 − mV/K
temperature coefficient of detection

− 0.175 − mV/K
hysteresis

output sink current 15 −− µA

reference voltage 1.165 1.190 1.215 V
quiescent current at pin UPOUT/DNIN all blocks operating − 270 −µA
ambient temperature −20 +25 +80 °C
internal temperature for cut-off − 190 −°C

2002 Jun 06 12

Philips Semiconductors Product specification

0.95 V starting basic power unit TEA1201TS

handbook, full pagewidth

600

R

DS(on)

mΩ

500

400

300

200

100

0

0.00 1.00

SWITCH

2.00 3.00 4.00

5.00

Fig.5 Switch drain-to-source on-state resistance as a function of input voltage.

VI (V)

MGU641

6.00

2002 Jun 06 13

Philips Semiconductors Product specification

0.95 V starting basic power unit TEA1201TS

13 APPLICATION INFORMATION

handbook, full pagewidth

low-batt

C1

L1

SYNC/PWM

C5

LX1
LX2

V

ref

LBI1

U/D

LBO

DC/DC

UPCONVERTER

LOW BATTERY

DETECTOR

Equivalent block diagram

D1

1
16

11

9

TEA1201TS

15

10

14

TEA1201TS

SWITCH

ILIM

5

UPOUT/DNIN

4
3

FB0

12

OUT1

6

FB1

7

V

out_dcdc

V

out_switched

low-batt

R

lim

R1

R2

C2

V

out_dcdc

V

out_switched

switch_on

SHDWN0

R7

2

813

GND GND0

Fig.6 1-cell NiCd or NiMH battery powered equipment.

2002 Jun 06 14

MGW790

Philips Semiconductors Product specification

0.95 V starting basic power unit TEA1201TS

handbook, full pagewidth

low-batt

C1

R8

R9

L1

SYNC/PWM

C5

LX1
LX2

V

ref

LBI1

U/D

LBO

DC/DC

UPCONVERTER

LOW BATTERY

DETECTOR

Equivalent block diagram

D1

1
16

11

9

TEA1201TS

15

10

14

TEA1201TS

SWITCH

ILIM

5

UPOUT/DNIN

4
3

FB0

12

OUT1

6

FB1

7

V

out_dcdc

V

out_switched

low-batt

R

lim

R1

R2

C2

V

out_dcdc

V

out_switched

switch_on

SHDWN0

R7

2

813

GND GND0

MGW791

Fig.7 2-cell NiCd or NiMH battery powered equipment with autonomous shut-down at low battery voltage.

2002 Jun 06 15

Philips Semiconductors Product specification

0.95 V starting basic power unit TEA1201TS

handbook, full pagewidth

low-batt

R7

C1

R8

R9

UPOUT/DNIN

R

lim

ILIM

U/D

LBI1

V

ref

C5

LBO

SYNC/PWM

DC/DC

DOWNCONVERTER

LOW BATTERY

DETECTOR

Equivalent block diagram

4
3

5

15

9

TEA1201TS

11

10

14

TEA1201TS

SWITCH

LX1

1

LX2

16

FB0

12

OUT1

6

FB1

7

D1

L1

V

out_dcdc

V

out_switched

low-batt

R1

R2

C2

V

out_dcdc

V

out_switched

switch_on

SHDWN0

2

813

GND GND0

Fig.8 3-cell NiCd or NiMH and 1-cell Li-Ion battery powered equipment.

2002 Jun 06 16

MGW792

Philips Semiconductors Product specification

0.95 V starting basic power unit TEA1201TS

13.1 External component selection

13.1.1 INDUCTOR L1
The performance of the TEA1201TS is not very sensitive

to inductance value. Thebest efficiencyperformance over
a wide load current range is achieved by using an
inductance of 6.8 µH for example TDK SLF7032 or
Coilcraft DO1608 range.

13.1.2 DC-TO-DC CONVERTER INPUT CAPACITOR C1
The value of C1 strongly depends on the type of input

source. In general, a 100 µF tantalum capacitor is
sufficient.

13.1.3 DC-TO-DC CONVERTER OUTPUT CAPACITOR C2
Thevalue and typeof C2 depends onthemaximum output

current and the ripple voltage which is allowed in the
application. Low-ESR tantalum capacitors show good
results. The most important specification of C2 is its ESR,
which mainly determines output voltage ripple.

13.1.4 DIODE D1
The Schottky diode is only used for a short time during

takeover from N-type power MOSFET and P-type power
MOSFET and vice versa. Therefore, a medium-power
diode is sufficient in most applications, for example a
Philips PRLL5819.

13.1.6 CURRENT LIMITING RESISTOR R10
The maximum instantaneous currentis setby theexternal

resistor R10. The preferred type is SMD with
1% tolerance.

The connection of resistor R10 differs for each mode:

• At upconversion: resistor R10 must be connected
between pins ILIM and UPOUT/DNIN; the current

320

I

limiting level is defined by:

Iim

=

----------­R10

• At downconversion: resistor R10 must be connected
between pins ILIM and GND0; the current limiting level

300

I

is defined by:

Iim

=

----------­R10

The average inductor current during limited current
operation also depends on the inductance value, input
voltage, output voltage and resistive losses in all
components in the power path. Ensure that
I

lim<Isat

(saturation current) of the inductor.

13.1.7 REFERENCE VOLTAGE DECOUPLING CAPACITOR C5

Optionally, a decoupling capacitor can be connected
between pin V

and ground in order to achieve a lower

ref

noise level of the output voltages of the LDO. The best
choice for C5 is a ceramic multilayer capacitor of
approximately 10 nF.

13.1.5 FEEDBACK RESISTORS R1 AND R2
The output voltage of the DC-to-DC converter is

determined by the resistors R1 and R2. The following
conditions apply:

• Use SMD type resistors only with a tolerance of 1%.
If larger body resistors are used, the capacitance on
pin FB0 will be too large, causing inaccurate operation.

• Resistors R1 and R2 should have a maximum value of
50 kΩ when connected in parallel. A higher value will
result in inaccurate operation.

Under these conditions, the output voltage can be
calculated by the formula:

R1

V

=

O



V

×

ref





1

+

------- -



R2

13.1.8 LOW BATTERY DETECTOR COMPONENTS
R7, R8 AND R9

Resistor R7 is connected between pin LBO and the input
or output pin and must be 330 kΩ or higher.

A 1-cell NiCd or NiMH battery can be connected directly to
pin LBI1.

A higher battery voltage can be detected by application of
a divider circuit with resistors R8 and R9. The low-battery
detection level for a higher battery voltage can be set by
using the formula:

R9

V

LBI1(det)



V

×=

----------------------

det



R8 R9+

Since current flows into the LBI1 pin, the parallel
impedance of R8 and R9 must be about 1 kΩ in order to
avoid inaccuracy due to the spread of the LBI1 current.

2002 Jun 06 17

Philips Semiconductors Product specification

0.95 V starting basic power unit TEA1201TS

100

handbook, full pagewidth

η

(%)

80

60

40

110

(1) VI= 2.4 V
(2) VI= 1.2 V

VO= 3.5 V

MGU577

(1)

(2)

2

10

IL (mA)

3

10

Fig.9 Efficiency as a function of load current.

2002 Jun 06 18

Philips Semiconductors Product specification

0.95 V starting basic power unit TEA1201TS

14 PACKAGE OUTLINE

SSOP16: plastic shrink small outline package; 16 leads; body width 4.4 mm

SOT369-1

D

c

y

Z

16

pin 1 index

9

18

w M

b

e

p

E

H

E

A

2

A

1

L

detail X

A

X

v M

A

Q

(A )

L

p

A

3

θ

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT A1A2A

mm

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

A

max.

0.15

0.00

1.4

1.2

IEC JEDEC EIAJ

1.5

OUTLINE
VERSION

SOT369-1 MO-152

0.25

b

3

p

0.32

0.25

0.20

0.13

(1)E(1)

cD

5.30

5.10

REFERENCES

4.5

4.3

0.65

2002 Jun 06 19

eHELLpQZywv θ

1.0

0.75

0.45

0.65

0.45

PROJECTION

0.130.2 0.1

EUROPEAN

6.6

6.2

(1)

0.48

0.18

ISSUE DATE

95-02-04
99-12-27

o

10

o

0

Philips Semiconductors Product specification

0.95 V starting basic power unit TEA1201TS

15 SOLDERING

15.1 Introduction to soldering surface mount
packages

Thistext gives averybrief insight toacomplex technology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface

mount IC packages. Wave soldering can still be used for
certainsurface mount ICs,butit is notsuitablefor fine pitch
SMDs. In these situations reflow soldering is
recommended.

15.2 Reflow soldering

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
tothe printed-circuitboardby screen printing,stencilling or
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.

Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 220 °C for
thick/large packages, and below 235 °C for small/thin
packages.

15.3 Wave soldering

Conventional single wave soldering is not recommended
forsurface mount devices(SMDs)or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

If wave soldering is used the following conditions must be
observed for optimal results:

• Use a double-wave soldering method comprising a
turbulent wavewith high upwardpressure followed by a
smooth laminar wave.

• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

– smaller than 1.27mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

• Forpackages with leadsonfour sides, thefootprintmust
be placedat a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

15.4 Manual soldering

Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.

2002 Jun 06 20

Philips Semiconductors Product specification

0.95 V starting basic power unit TEA1201TS

15.5 Suitability of surface mount IC packages for wave and reflow soldering methods

PACKAGE

WAVE REFLOW

(1)

BGA, HBGA, LFBGA, SQFP, TFBGA not suitable suitable

SOLDERING METHOD

HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, SMS not suitable

(3)

PLCC

, SO, SOJ suitable suitable
LQFP, QFP, TQFP not recommended
SSOP, TSSOP, VSO not recommended

(2)

(3)(4)
(5)

suitable

suitable
suitable

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

.

2. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.

3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.

4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

5. Wave soldering is onlysuitable for SSOP and TSSOPpackages witha pitch (e) equal toor larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

2002 Jun 06 21

Philips Semiconductors Product specification

0.95 V starting basic power unit TEA1201TS

16 DATA SHEET STATUS

PRODUCT

DATA SHEET STATUS

Objective data Development This data sheet contains data from the objective specification for product

Preliminary data Qualification This data sheet contains data from the preliminary specification.

Product data Production This data sheet contains data from the product specification. Philips

(1)

STATUS

(2)

DEFINITIONS

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

17 DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition Limiting valuesgiven are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese or atany other conditionsabovethose given inthe
Characteristics sectionsof the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation or warranty thatsuchapplications will be
suitable for the specified use without further testing or
modification.

18 DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expectedto resultin personal injury. Philips
Semiconductorscustomers using or sellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse of anyofthese products, conveysnolicence or title
under any patent, copyright, or mask work right to these
products,and makes norepresentations or warrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

2002 Jun 06 22

Philips Semiconductors Product specification

0.95 V starting basic power unit TEA1201TS

NOTES

2002 Jun 06 23

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 403502/01/pp24 Date of release: 2002 Jun 06 Document order number: 9397 750 09359

SCA74