Datasheet TEA1118AT-C1, TEA1118AM-C1, TEA1118T-C2, TEA1118T-C1, TEA1118M-C2 Datasheet (Philips)

DATA SH EET

Product specification
Supersedes data of 1996 Nov 26
File under Integrated Circuits, IC03

1997 Jul 14

INTEGRATED CIRCUITS

TEA1118; TEA1118A

Versatile cordless transmisssion
circuit

1997 Jul 14 2

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

FEATURES

• Low DC line voltage; operates down to 1.6 V (excluding
polarity guard)

• Voltage regulator with adjustable DC voltage

• Provides a supply for external circuits

• Symmetrical high impedance transmit inputs (62.5 kΩ)

with large signals handling capabilities [up to
1 V (RMS value) with less than 2% THD]

• Receive amplifier for dynamic, magnetic or
piezoelectric earpieces

• AGC line loss compensation for transmit and earpiece
amplifiers

• DTMF input with confidence tone (TEA1118A only)

• MUTE input for pulse or DTMF dialling (TEA1118A only)

• Transmit mute function, also enabling the DTMF input

(TEA1118A only).

APPLICATIONS

• Cordless telephone base stations

• Fax machines

• Answering machines.

GENERAL DESCRIPTION

The TEA1118 and TEA1118A are bipolar integrated
circuits that perform all speech and line interface functions
required in cordless telephone base stations. The ICs
operate at a line voltage down to 1.6 V DC (with reduced
performance) to facilitate the use of telephone sets
connected in parallel.

The TEA1118A offers in addition to the TEA1118
electronic switching between speech and dialling.
Moreover the transmit amplifier can be disabled during
speech condition by means of a transmit mute function.

All statements and values refer to all versions unless
otherwise specified.

QUICK REFERENCE DATA

I

line

= 15 mA; VEE=0V; R

SLPE

=20Ω; AGC pin connected to VEE; Z

line

= 600 Ω; f = 1 kHz; T

amb

=25°C;

unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

line

line current operating range normal operation 11 − 140 mA

with reduced performance 1 − 11 mA

V

LN

DC line voltage 3.35 3.65 3.95 V

I

CC

internal current consumption VCC= 2.9 V − 1.15 1.4 mA

V

CC

supply voltage for peripherals IP=0mA − 2.9 − V

G

vtrx

typical voltage gain range

transmit amplifier (TEA1118A only) V

TX

= 200 mV (RMS) −−11.3 dB

transmit amplifier (TEA1118 only) V

TX

= 200 mV (RMS) 5.3 − 11.3 dB

receive amplifier V

IR

= 4 mV (RMS) 19 − 31 dB

∆G

vtrx

gain control range for transmit and
receive amplifiers with respect to
I

line

=15mA

I

line

=75mA − 5.8 − dB

1997 Jul 14 3

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

ORDERING INFORMATION

BLOCK DIAGRAMS

TYPE

NUMBER

PACKAGE

NAME DESCRIPTION VERSION

TEA1118M SSOP16

plastic shrink small outline package; 16 leads; body width 4.4 mm

SOT369-1

TEA1118T SO14

plastic small outline package; 14 leads; body width 3.9 mm

SOT108-1

TEA1118AM SSOP16

plastic shrink small outline package; 16 leads; body width 4.4 mm

SOT369-1

TEA1118AT SO14

plastic small outline package; 14 leads; body width 3.9 mm

SOT108-1

Fig.1 Block diagram (TEA1118).

handbook, full pagewidth

AGC

CIRCUIT

CURRENT

REFERENCE

LOW VOLTAGE

CIRCUIT

IR

TX+

TX−

V

EE

AGC

SLPE

TEA1118M

TEA1118T

GAR

QR

LN

V

CC

REG

GAT

MBH273

V−>I

V−>I

1997 Jul 14 4

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

Fig.2 Block diagram (TEA1118A).

handbook, full pagewidth

ATTENUATOR

DTMF

TRANSMIT

MUTE

AGC

CIRCUIT

CURRENT

REFERENCE

LOW VOLTAGE

CIRCUIT

IR

TX+

TX−

TMUTE

V

EE

AGC

SLPE

TEA1118AM

TEA1118AT

GAR

QR

LN

V

CC

REG

MUTE

MBH272

V−>I

V−>I

V−>I

V−>I

1997 Jul 14 5

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

PINNING

SYMBOL

TEA1118 TEA1118A

DESCRIPTION

SO14 SSOP16 SO14 SSOP16

LN 1111positive line terminal
SLPE 2222slope (DC resistance) adjustment
REG 3333line voltage regulator decoupling
GAT 4 4 −−transmit gain adjustment
TMUTE −−4 5 transmit mute input
DTMF −−5 6 dual-tone multi-frequency input
MUTE −−6 8 mute input to select speech or dialling mode
IR 7979receive amplifier input
AGC 8 10 8 10 automatic gain control/line loss compensation
TX− 9 11 9 11 inverting transmit amplifier input
TX+ 10 12 10 12 non-inverting transmit amplifier input
V

EE

11 13 11 13 negative line terminal
QR 12 14 12 14 receive amplifier output
GAR 13 15 13 15 receive gain adjustment
V

CC

14 16 14 16 supply voltage for speech circuit and peripherals
n.c. 5 and 6 5 to 8 − 4 and 7 not connected

1997 Jul 14 6

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

Fig.3 Pin configuration (TEA1118T).

handbook, halfpage

TEA1118T

MBH269

1
2
3
4
5
6
7

14
13
12
11
10

9
8

SLPE GAR

REG QR

GAT

V

EE
n.c. TX+
n.c. TX−

IR AGC

LN

V

CC

Fig.4 Pin configuration (TEA1118M).

handbook, halfpage

TEA1118M

MBH268

1
2
3
4
5
6
7
8

16
15
14
13
12
11
10

9

SLPE GAR

REG QR

GAT

V

EE
n.c. TX+
n.c. TX−

n.c. AGC
n.c. IR

LN

V

CC

Fig.5 Pin configuration (TEA1118AT).

handbook, halfpage

TEA1118AT

MBH271

1
2
3
4
5
6
7

14
13
12
11
10

9
8

SLPE GAR

REG QR

TMUTE

V

EE
DTMF TX+
MUTE TX−

IR AGC

LN

V

CC

Fig.6 Pin configuration (TEA1118AM).

handbook, halfpage

TEA1118AM

MBH270

1
2
3
4
5
6
7
8

16
15
14
13
12
11
10

9

SLPE GAR

REG QR

n.c.

V

EE

TMUTE TX+

DTMF TX−

n.c. AGC

MUTE IR

LN

V

CC

1997 Jul 14 7

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

FUNCTIONAL DESCRIPTION

All data given in this chapter are typical values, except
when otherwise specified.

Supplies (pins LN, SLPE, V

CC

and REG)

The supply for the TEA1118 and TEA1118A and their
peripherals is obtained from the telephone line.

The ICs generate a stabilized reference voltage (V

ref

)
between pins LN and SLPE. This reference voltage is
equal to 3.35 V, is temperature compensated and can be
adjusted by means of an external resistor (RVA). It can be
increased by connecting the RVA resistor between
pins REG and SLPE (see Fig.11), or decreased by
connecting the RVA resistor between pins REG and LN.
The voltage at pin REG is used by the internal regulator to
generate the stabilized reference voltage and is decoupled
by a capacitor (C

REG

) which is connected to VEE.
This capacitor, converted into an equivalent inductance
(see Section “Set impedance”), realizes the set impedance
conversion from its DC value (R

SLPE

) to its AC value
(RCC in the audio-frequency range). The voltage at pin
SLPE is proportional to the line current. Figure 7 illustrates
the supply configuration.

The ICs regulate the line voltage at pin LN, and it can be
calculated as follows:

VLN=V

ref+RSLPE

× I

SLPE

I

SLPE=Iline

− ICC− IP− I* = I

sh

where:

I

line

: line current
ICC: current consumption of the IC
IP: supply current for peripheral circuits
I*: current consumed between LN and V

EE

Ish: the excess line current shunted to SLPE (and VEE)
via LN.

The preferred value for R

SLPE

is 20 Ω. Changing R

SLPE

will
affect more than the DC characteristics; it also influences
the transmit gain and the DTMF gain (TEA1118A only), the
gain control characteristics, the sidetone level and the
maximum output swing on the line.

The internal circuitry of the TEA1118 and TEA1118A is
supplied from pin VCC. This voltage supply is derived from
the line voltage by means of a resistor (RCC) and must be
decoupled by a capacitor C

VCC

. It may also be used to
supply peripheral circuits such as dialling or control
circuits. The VCC voltage depends on the current
consumed by the IC and the peripheral circuits as shown

by the formula (see also Figs 8 and 9). R

CCint

is the
internal equivalent resistance of the voltage supply point,
and I

rec

is the current consumed by the output stage of the

earpiece amplifier.
VCC=V

CC0

− R

CCint

× (IP− I

rec

)

V

CC0=VLN

− RCC× I

CC

The DC line current flowing into the set is determined by
the exchange supply voltage (V

exch

), the feeding bridge

resistance (R

exch

), the DC resistance of the telephone line

(R

line

) and the reference voltage (V

ref

). With line currents
below 7.5 mA, the internal reference voltage (generating
V

ref

) is automatically adjusted to a lower value.
This means that more sets can operate in parallel with DC
line voltages (excluding the polarity guard) down to an
absolute minimum voltage of 1.6 V. At currents below

7.5 mA, the circuit has limited transmit and receive levels.
This is called the low voltage area.

Set impedance

In the audio frequency range, the dynamic impedance is
mainly determined by the R

CC

resistor. The equivalent

impedance of the circuits is illustrated in Fig.10.

Transmit amplifier (pins TX+, TX− and GAT)

The TEA1118 and TEA1118A have symmetrical transmit
inputs. The input impedance between pins TX+ and TX− is
equal to 62.5 kΩ; the input impedance between pins
TX+/TX− and V

EE

is equal 36.5 kΩ. The voltage gain from

pins TX+/TX− to pin LN is set at 11.3 dB.
Automatic gain control is provided on this amplifier for line

loss compensation.
The gain of the TEA1118 can be decreased by connecting

an external resistor R

GAT

between pins GAT and REG.

The adjustment range is equal to 6 dB. A capacitor C

GAT

connected between pins GAT and REG can be used to
provide a first-order low-pass filter. The cut-off frequency
corresponds to the time constant C

GAT

×(R

GATint

// R

GAT

).

R

GATint

is the internal resistor which sets the gain with a

typical value of 27 kΩ.

Transmit mute (pin TMUTE; TEA1118A only)

The transmit amplifier can be disabled by activating the
transmit mute function. When TMUTE is LOW, the normal
speech mode is entered, depending on the level on MUTE.
When TMUTE is HIGH, the transmit amplifier inputs are
disabled while the DTMF input is enabled (no confidence
tone is provided). The voltage gain between LN and
TX+/TX− is attenuated; the gain reduction is 80 dB.

1997 Jul 14 8

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

Receive amplifier (pins IR, GAR and QR)

The receive amplifier has one input (IR) and one output
(QR). The input impedance between pins IR and VEE is
20 kΩ. The voltage gain from pin IR to pin QR is set at
31 dB. The gain can be decreased by connecting an
external resistor R

GAR

between pins GAR and QR; the

adjustment range is 12 dB. Two external capacitors C

GAR

(connected between GAR and QR) and C

GARS

(connected

between GAR and VEE) ensure stability.

The C

GAR

capacitor provides a first-order low-pass filter.
The cut-off frequency corresponds to the time constant
C

GAR

× (R

GARint

// R

GAR

). R

GARint

is the internal resistor
which sets the gain with a typical value of 100 kΩ. The
condition C

GARS

=10×C

GAR

must be fulfilled to ensure

stability.
Automatic gain control is provided on this amplifier for line

loss compensation.

Fig.7 Supply configuration.

h

andbook, full pagewidth

I

sh

I

SLPE

REG

LN

SLPE

V

EE

V

CC

R

CC

C

VCC

I

CC

C

REG

R

SLPE

V

exch

R

exch

I

line

R

line

TEA1118

TEA1118A

I

*

I

p

peripheral

circuits

100 µF

4.7 µF

20 Ω

619 Ω

MBH274

from preamp

1997 Jul 14 9

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

Fig.8 Typical current IP available from VCC for

peripheral circuits at I

line

=15mA.

(1) With RVA resistor.
(2) Without RVA resistor.

handbook, halfpage

2.5

0

01234

MBE783

0.5

1

1.5

2

VCC (V)

(1)(2)

I

P

(mA)

Fig.9 VCC voltage supply for peripheral.

handbook, halfpage

PERIPHERAL

CIRCUIT

I

P

I

rec

R

CCintVCC

V

EE

V

CCO

MBE792

Fig.10 Equivalent impedance between LN and VEE.

LEQ=C

REG

× R

SLPE

× RP.

RP= internal resistance (15.5kΩ).

handbook, halfpage

LN

V

EE

SLPE

R

SLPE

C

REG

REG V

CC

R

CC

4.7 µF

100 µF

C

VCC

619 Ω

20 Ω

R

P

V

ref

L

EQ

MBE788

Fig.11 Reference voltage adjustment by RVA.

(1) Influence of RVA on V

ref

.

(2) V

ref

without influence of RVA.

handbook, halfpage

6.0

V

ref

(V)

3.0

4.0

(1)

(2)

5.0

RVA (Ω)

MGD176

10

5

10

4

10

6

10

7

1997 Jul 14 10

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

Automatic Gain Control (pin AGC)

The TEA1118 and TEA1118A perform automatic line loss
compensation. The automatic gain control varies the gain
of the transmit amplifier and the gain of the receive
amplifier in accordance with the DC line current.
The control range is 5.8 dB (which corresponds
approximately to a line length of 5 km for a 0.5 mm
diameter twisted-pair copper cable with a DC resistance of
176 Ω/km and an average attenuation of 1.2 dB/km).
The ICs can be used with different configurations of
feeding bridge (supply voltage and bridge resistance) by
connecting an external resistor R

AGC

between pins AGC

and VEE. This resistor enables the I

start

and I

stop

line

currents to be increased (the ratio between I

start

and I

stop

is
not affected by the resistor). The AGC function is disabled
when pin AGC is left open-circuit.

DTMF amplifier (pin DTMF; TEA1118A only)

When the DTMF amplifier is enabled, dialling tones may
be sent on line. These tones can be heard in the earpiece
at a low level (confidence tone).

The TEA1118A has an asymmetrical DTMF input.
The input impedance between DTMF and V

EE

is 20 kΩ.

The voltage gain from pin DTMF to pin LN is 17.4 dB.
The automatic gain control has no effect on the DTMF

amplifier.

Mute function (pin MUTE; TEA1118A only)

The mute function performs the switching action between
the speech mode and the dialling mode. When MUTE is
LOW or open-circuit, the transmit and receive amplifiers
inputs are enabled while the DTMF input is disabled,
depending on the TMUTE level. When MUTE is HIGH, the
DTMF input is enabled and the transmit and receive
amplifiers inputs are disabled.

Sidetone suppression

The TEA1118 and TEA1118A anti-sidetone network
comprising R

CC

//Z

line

, R

ast1

, R

ast2

, R

ast3

, R

SLPE

and Z

bal

(see Fig.12) suppresses the transmitted signal in the
earpiece. Maximum compensation is obtained when the
following conditions are fulfilled:

The scale factor k is chosen to meet the compatibility with
a standard capacitor from the E6 or E12 range for Z

bal

.

In practice, Z

line

varies considerably with the line type and

the line length. Therefore, the value chosen for Z

bal

should
be for an average line length which gives satisfactory
sidetone suppression with short and long lines.
The suppression also depends on the accuracy of the
match between Z

bal

and the impedance of the average

line.
The anti-sidetone network for the TEA1118 and

TEA1118A (as shown in Fig.16) attenuates the receive
signal from the line by 32 dB before it enters the receive
amplifier.
The attenuation is almost constant over the whole audio
frequency range.

A Wheatstone bridge configuration (see Fig.13) may also
be used.

More information on the balancing of an anti-sidetone
bridge can be obtained in our publication

“Applications

Handbook for Wired Telecom Systems, IC03b”

, order

number 9397 750 00811.

R

SLPERast1

× R

CC

R

ast2Rast3

+()×=

k

R

ast2

R

ast3RSLPE

+()×[]

R

ast1RSLPE

×()

-----------------------------------------------------------------------

=

Z

bal

kZ

line

×=

MUTE and TMUTE levels for different modes (TEA1118A only)
Table 1 Required MUTE and TMUTE levels to enable the different possible modes

Note

1. X = don’t care.

MODE

CHANNEL

MUTE TMUTE

TRANSMIT RECEIVE DTMF

CONFIDENCE

TONE

Speech on on off off LOW LOW
DTMF dialling off off on on HIGH X

(1)

Transmit mute off on on off LOW HIGH

1997 Jul 14 11

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

Fig.12 Equivalent circuit of TEA1118 and TEA1118A family anti-sidetone bridge.

handbook, full pagewidth

MBE787

I

m

Z

ir

IR

R

ast1

R

ast3

R

ast2

SLPE

R

SLPE

V

EE

Z

line

R

CC

LN

Z

bal

Fig.13 Equivalent circuit of an anti-sidetone network in a Wheatstone bridge configuration.

andbook, full pagewidth

MBE786

I

m

Z

ir

IR

Z

bal

R

ast1

SLPE

R

SLPE

V

EE

Z

line

R

CC

LN

R

A

1997 Jul 14 12

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

HANDLING

This device meets class 2 ESD test requirements [Human Body Model (HBM)], in accordance with

“MIL STD 883C - method 3015”

.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

LN

positive continuous line voltage VEE− 0.4 12 V
repetitive line voltage during switch-on or line

interruption

V

EE

− 0.4 13.2 V

V

n(max)

maximum voltage on all pins VEE− 0.4 VCC+ 0.4 V

I

line

line current R

SLPE

=20Ω;

see Figs 14 and 15

− 140 mA

P

tot

total power dissipation T

amb

=75°C;

see Figs 14 and 15

TEA1118T; TEA1118AT − 384 mW
TEA1118M; TEA1118AM − 312 mW

T

stg

IC storage temperature −40 +125 °C

T

amb

operating ambient temperature −25 +75 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient in free air

TEA1118T; TEA1118AT 130 K/W
TEA1118M; TEA1118AM mounted on epoxy board

40.1 × 19.1 × 1.5 mm

160 K/W

1997 Jul 14 13

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

Fig.14 SO14 safe operating area.

(1) T

amb

=45°C; P

tot

= 615mW.

(2) T

amb

=55°C; P

tot

= 538mW.

(3) T

amb

=65°C; P

tot

= 461mW.

(4) T

amb

=75°C; P

tot

= 384mW.

handbook, halfpage

212

150

30

70

110

MBH275

46810

130

90

50

I

line

(mA)

V

LNVSLPE

(V)

(3)
(4)

(2)

(1)

Fig.15 SSOP16 safe operating area.

(1) T

amb

=45°C; P

tot

= 500mW.

(2) T

amb

=55°C; P

tot

= 437mW.

(3) T

amb

=65°C; P

tot

= 375mW.

(4) T

amb

=75°C; P

tot

= 312mW.

handbook, halfpage

212

160

20

40

80

120

MBH276

46810

140

100

60

I

line

(mA)

V

LNVSLPE

(V)

(1)
(2)
(3)
(4)

CHARACTERISTICS

I

line

= 15 mA; VEE=0V; R

SLPE

=20Ω; AGC pin connected to VEE; Z

line

= 600 Ω; f = 1 kHz; T

amb

=25°C;

unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies (pins V

LN

, VCC, SLPE and REG)

V

ref

stabilized voltage between LN and
SLPE

3.1 3.35 3.6 V

V

LN

DC line voltage I

line

=1mA − 1.6 − V

I

line

=4mA − 2.45 − V

I

line

= 15 mA 3.35 3.65 3.95 V

I

line

= 140 mA −−6.9 V

V

LN(exR)

DC line voltage with an external
resistor R

VA

R

VA(SLPE−REG)

=27kΩ− 4.4 − V

∆V

LN(T)

DC line voltage variation with
temperature referenced to 25 °C

T

amb

= −25 to +75 °C −±30 − mV

I

CC

internal current consumption VCC= 2.9 V − 1.15 1.4 mA

V

CC

supply voltage for peripherals IP=0mA − 2.9 − V

R

CCint

equivalent supply voltage
resistance

IP= 0.5 mA − 550 620 Ω

1997 Jul 14 14

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

Transmit amplifier (pins TX+, TX− and GAT)
Z

i

 input impedance

differential between pins
TX+ and TX−

− 62.5 − kΩ

single-ended between pins
TX+/TX− and V

EE

− 36.5 − kΩ

G

vtx

voltage gain from TX+/TX− to LN VTX= 200 mV (RMS) 10.1 11.3 12.5 dB

∆G

vtx(f)

gain variation with frequency
referred to 1 kHz

f = 300 to 3400 Hz −±0.2 − dB

∆G

vtx(T)

gain variation with temperature
referred to 25 °C

T

amb

= −25 to +75 °C −±0.3 − dB

CMRR common mode rejection ratio − 60 − dB
∆G

vtxr

gain voltage reduction range
(TEA1118 only)

external resistor connected
between GAT and REG

−−6dB

V

LN(max)

maximum sending signal
(RMS value)

I

line

= 15 mA; THD = 2% 1.4 1.7 − V

I

line

= 4 mA; THD = 10% − 0.8 − V

V

TX(max)

maximum transmit input voltage
(RMS value)

I

line

= 15 mA; THD = 2% − 0.45 − V

I

line

= 75 mA; THD = 2% − 0.9 − V

V

notx

noise output voltage at pin LN; pins
TX+/TX− shorted through 200 Ω

psophometrically weighted
(P53 curve)

−−84 − dBmp

Transmit mute (pin TMUTE; TEA1118A only)

∆G

vtxm

gain reduction TMUTE = HIGH − 80 − dB

V

IL

LOW level input voltage VEE− 0.4 − VEE+ 0.3 V

V

IH

HIGH level input voltage VEE+ 1.5 − VCC+ 0.4 V

I

TMUTE

input current input level = HIGH − 1.25 3 µA

Receive amplifier (pins IR, QR and GAR)

Z

i

 input impedance − 20 − kΩ

G

vrx

voltage gain from IR to QR VIR= 4 mV (RMS) 29.8 31 32.2 dB

∆G

vrx(f)

gain variation with frequency
referenced to 1 kHz

f = 300 to 3400 Hz −±0.2 − dB

∆G

vrx(T)

gain variation with temperature
referenced to 25 °C

T

amb

= −25 to +75 °C −±0.3 − dB

∆G

vrxr

gain voltage reduction range external resistor connected

between GAR and QR

−−12 dB

V

o(rms)

maximum receive signal
(RMS value)

IP= 0 mA sine wave drive;
RL= 150 Ω; THD = 2%

− 0.25 − V

I

P

= 0 mA sine wave drive;

RL= 450 Ω; THD = 2%

− 0.35 − V

V

norx(rms)

noise output voltage at pin QR
(RMS value)

IR open-circuit;
RL= 150 Ω;
psophometrically weighted
(P53 curve)

TEA1118 −−89 − dBVp
TEA1118A −−86 − dBVp

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

1997 Jul 14 15

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

Automatic gain control (pin AGC)

∆G

vtrx

gain control range for transmit and
receive amplifiers with respect to
I

line

=15mA

I

line

=75mA; − 5.8 − dB

I

start

highest line current for maximum
gain

− 26 − mA

I

stop

lowest line current for minimum gain − 61 − mA

DTMF amplifier (pin DTMF; TEA1118A only)

Z

i

 input impedance − 20 − kΩ

G

vdtmf

voltage gain from DTMF to LN V

DTMF

= 100 mV (RMS);

MUTE or TMUTE = HIGH

16.2 17.4 18.6 dB

∆G

vdtmf(f)

gain variation with frequency
referenced to 1 kHz

f = 300 to 3400 Hz −±0.2 − dB

∆G

vdtmf(T)

gain variation with temperature
referenced to 25 °C

T

amb

= −25 to + 75 °C −±0.4 − dB

G

vct

voltage gain from DTMF to QR
(confidence tone)

V

DTMF

= 100 mV (RMS);

RL= 150 Ω

−−18 − dB

Mute function (pin MUTE; TEA1118A only)

V

IL

LOW level input voltage VEE− 0.4 − VEE+ 0.3 V

V

IH

HIGH level input voltage VEE+ 1.5 − VCC+ 0.4 V

I

MUTE

input current input level = HIGH − 1.25 3 µA

∆G

trxm

gain reduction for transmit and
receive amplifiers

MUTE = HIGH − 80 − dB

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

1997 Jul 14 16

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

APPLICATION INFORMATION

Fig.16 Typical application of the TEA1118 and TEA1118A in sets with pulse dialling or flash facilities.

k, full pagewidth

telephone

line

4 x

BAS11

a/b

b/a

95 V

BZX79C12

BZX79C10

R

ast1

R

prot

130 kΩ

390 Ω

R

ast2

R

ast3

3.92 kΩ

Z

bal

C

IR

C

GAR

C

GARS

10 Ω

IR

BF473

BSN254

BC547

BC558

BC547

PD

input

R

pd4

470 kΩ

R

pd5

470 kΩ

R

pd3

1 MΩ

R

pd2

470 kΩ

R

pd6

68 kΩ

QR

GAR

TX+

TX−

signal

from

dial and

control

circuits

C

VCC

supply for

peripheral

circuits

RCC619 Ω

R

SLPE

R

limit

3.9 Ω

C

REG

20 Ω

R

pd1

470 kΩ

V

CC

DTMF

MUTE

TMUTE

LN

SLPE GAT

(1)

(2)

(2)

(2)

REG AGC

V

EE

TEA1118

TEA1118A

100 µF

1 nF

100 pF

4.7 µF

MBH277

V

(1) TEA1118 only.

(2) TEA1118A only.

1997 Jul 14 17

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

PACKAGE OUTLINES

UNIT A

1

A2A

3

b

p

cD

(1)E(1)

(1)

eHELLpQZywv θ

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

0.15

0.00

1.4

1.2

0.32

0.20

0.25

0.13

5.30

5.10

4.5

4.3

0.65

6.6

6.2

0.65

0.45

0.48

0.18

10

0

o

o

0.130.2 0.1

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

0.75

0.45

1.0

SOT369-1

94-04-20
95-02-04

w M

θ

A

A

1

A

2

b

p

D

y

H

E

L

p

Q

detail X

E

Z

e

c

L

v M

A

X

(A )

3

A

0.25

18

16

9

pin 1 index

0 2.5 5 mm

scale

SSOP16: plastic shrink small outline package; 16 leads; body width 4.4 mm

SOT369-1

A

max.

1.5

1997 Jul 14 18

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

UNIT

A

max.

A

1

A2A

3

b

p

cD

(1)E(1)

(1)

eHELLpQZywv θ

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

inches

1.75

0.25

0.10

1.45

1.25

0.25

0.49

0.36

0.25

0.19

8.75

8.55

4.0

3.8

1.27

6.2

5.8

0.7

0.6

0.7

0.3

8
0

o
o

0.25 0.1

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

1.0

0.4

SOT108-1

X

w M

θ

A

A

1

A

2

b

p

D

H

E

L

p

Q

detail X

E

Z

e

c

L

v M

A

(A )

3

A

7

8

1

14

y

076E06S MS-012AB

pin 1 index

0.069

0.010

0.004

0.057

0.049

0.01

0.019

0.014

0.0100

0.0075

0.35

0.34

0.16

0.15

0.050

1.05

0.041

0.244

0.228

0.028

0.024

0.028

0.012

0.01

0.25

0.01 0.004

0.039

0.016

95-01-23
97-05-22

0 2.5 5 mm

scale

SO14: plastic small outline package; 14 leads; body width 3.9 mm

SOT108-1

1997 Jul 14 19

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

(order code 9398 652 90011).

Reflow soldering

Reflow soldering techniques are suitable for all SO and
SSOP packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

Wave soldering

SO
Wave soldering techniques can be used for all SO

packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be
parallel to the solder flow.

• The package footprint must incorporate solder thieves at
the downstream end.

SSOP
Wave soldering is not recommended for SSOP packages.

This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.

If wave soldering cannot be avoided, the following
conditions must be observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave)
soldering technique should be used.

• The longitudinal axis of the package footprint must

be parallel to the solder flow and must incorporate
solder thieves at the downstream end.

Even with these conditions, only consider wave
soldering SSOP packages that have a body width of

4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).

METHOD (SO AND SSOP)
During placement and before soldering, the package must

be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

1997 Jul 14 20

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

1997 Jul 14 21

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

NOTES

1997 Jul 14 22

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

NOTES

1997 Jul 14 23

Philips Semiconductors Product specification

Versatile cordless transmisssion circuit TEA1118; TEA1118A

NOTES

Internet: http://www.semiconductors.philips.com

Philips Semiconductors – a worldwide company

© Philips Electronics N.V. 1997 SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Netherlands: Postbus 90050, 5600PB EINDHOVEN, Bldg.VB,
Tel. [phone], Fax.[phone]

New Zealand: 2 WagenerPlace, C.P.O. Box1041, AUCKLAND,
Tel. [phone], Fax.[phone]

Norway: Box 1, Manglerud0612, OSLO,
Tel. [phone], Fax.[phone]

Philippines: Philips Semiconductors Philippines Inc.,
106 ValeroSt. SalcedoVillage, P.O. Box2108 MCC,MAKATI,
Metro MANILA, Tel.[phone],Fax. [phone]

Poland: Ul. Lukiska10, PL 04-123WARSZAWA,
Tel. [phone], Fax.[phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva35A, 119048 MOSCOW,

Tel. [phone], Fax.[phone]
Singapore: Lorong 1, ToaPayoh, SINGAPORE 1231,

Tel. [phone],Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O.Box 7430 Johannesburg2000,
Tel. [phone], Fax.[phone]

South America: Rua doRocio 220, 5thfloor, Suite 51,
04552-903 SãoPaulo, SÃO PAULO- SP, Brazil,
Tel. [phone], Fax.[phone]

Spain: Balmes 22, 08007BARCELONA,
Tel. [phone], Fax.[phone]

Sweden: Kottbygatan 7, Akalla, S-16485STOCKHOLM,
Tel. [phone], Fax.[phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone], Fax.[phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N.Rd., Sec.1,
TAIPEI, Taiwan Tel. [phone], Fax.[phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-BangnaRoad Prakanong, BANGKOK10260,
Tel. [phone], Fax.[phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. [phone], Fax.[phone]

Ukraine: PHILIPS UKRAINE, 4 PatriceLumumba str., Building B, Floor7,
252042 KIEV, Tel.[phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB35BX, Tel. [phone], Fax.[phone]

United States: 811 EastArques Avenue, SUNNYVALE, CA94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors, Marketing &Sales Communications,
Building BE-p, P.O.Box 218, 5600MD EINDHOVEN, TheNetherlands, Fax.[phone]

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax.[phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. [phone],

Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str.6,

220050 MINSK, Tel.[phone],Fax. [phone]

Belgium: see The Netherlands
Brazil: seeSouth America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,

51 JamesBourchier Blvd., 1407SOFIA,
Tel. [phone], Fax.[phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone]

China/Hong Kong: 501 HongKong Industrial Technology Centre,
72 TatChee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone],Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard80, PB 1919, DK-2300COPENHAGEN S,

Tel. [phone], Fax.[phone]
Finland: Sinikalliontie 3, FIN-02630ESPOO,

Tel. [phone],Fax. [phone]
France: 4 Ruedu Port-aux-Vins, BP317, 92156SURESNES Cedex,

Tel. [phone],Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097HAMBURG,

Tel. [phone],Fax. [phone]
Greece: No. 15,25th MarchStreet, GR 17778TAVROS/ATHENS,

Tel. [phone], Fax.[phone]

Hungary: seeAustria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr.Annie BesantRoad, Worli, MUMBAI 400025,
Tel. [phone], Fax.[phone]

Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. [phone], Fax.[phone]
Israel: RAPAC Electronics, 7Kehilat SalonikiSt, PO Box 18053,

TEL AVIV61180, Tel. [phone], Fax.[phone]
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. [phone],Fax. [phone]
Japan: Philips Bldg13-37, Kohnan 2-chome, Minato-ku, TOKYO108,

Tel. [phone], Fax.[phone]
Korea: Philips House, 260-199Itaewon-dong, Yongsan-ku, SEOUL,

Tel. [phone], Fax.[phone]
Malaysia: No. 76Jalan Universiti, 46200PETALING JAYA, SELANGOR,

Tel. [phone],Fax. [phone]
Mexico: 5900 GatewayEast, Suite 200, ELPASO, TEXAS 79905,

Tel. [phone]
Middle East: see Italy

Printed in The Netherlands 417027/1200/03/pp24 Date of release: 1997 Jul14 Document order number: 9397 750 02613