Datasheet TEA1113 Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TEA1113

Low voltage versatile telephone
transmission circuit with dialler
interface

Product specification
Supersedes data of 1996 Feb 08
File under Integrated Circuits, IC03

1997 Mar 27

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

FEATURES

• Low DC line voltage; operates down to 1.6 V (excluding
polarity guard)

• Voltage regulator with adjustable DC voltage

• Provides a supply for external circuits

• Symmetrical high impedance inputs (64 kΩ) for

dynamic, magnetic or piezo-electric microphones

• Asymmetrical high impedance input (32 kΩ) for electret
microphones

• DTMF input with confidence tone
MUTE input for pulse or DTMF dialling

•

• Receiving amplifier for dynamic, magnetic or

piezo-electric earpieces

• Dynamic limitation in the transmit direction to prevent
distortion of the transmit line and sidetone signals

• AGC line loss compensation for microphone and
earpiece amplifiers

• LED on-hook/off-hook status indication

• Microphone mute function available with switch.

APPLICATION

• Line powered telephone sets, cordless telephones, fax

GENERAL DESCRIPTION

The TEA1113 is a bipolar integrated circuit that performs
all speech and line interface functions required in fully
electronic telephone sets. It performs electronic switching
between speech and dialling. The IC operates at a line
voltage down to 1.6 V DC (with reduced performance) to
facilitate the use of telephone sets connected in parallel.

A current (proportional to the line current and internally
limited to 19.5 mA) is available to drive an LED which
indicates the on-hook/off-hook status.

The transmit signal on the line is dynamically limited to
prevent distortion at high transmit levels for both the
sending line and sidetone signals. The microphone
amplifier can be disabled during speech condition by
means of a microphone mute function.

All statements and values refer to all versions unless
otherwise specified.

TEA1113

machines and answering machines.

QUICK REFERENCE DATA

I

= 15 mA; VEE=0V; R

line

T

=25°C; unless otherwise specified.

amb

SLPE

=20Ω; C

= 470 nF; AGC pin connected to VEE; Z

DLS

= 600 Ω; f = 1 kHz;

line

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

line

line current operating range normal operation 11 − 140 mA

with reduced performance 1 − 11 mA

I

LED(max)

V

LN

V

LN(max)(p-p)

maximum supply current available I

=18 mA − 0.6 − mA

line

>76mA − 19.5 − mA

I

line

DC line voltage 3.7 4.0 4.3 V
maximum output voltage swing

3.8 4.65 − V

(peak-to-peak value)

I

CC

V
G

∆G

CC

vtrx

vtrx

internal current consumption VCC= 3.2 V − 1.3 1.6 mA
supply voltage for peripherals Ip= 0 mA 2.8 3.2 − V
typical voltage gain range

microphone amplifier V
receiving amplifier V

gain control range for microphone and

= 2 mV (RMS) 38.8 − 51.8 dB

MIC

= 4 mV (RMS) 19.3 − 31.3 dB

IR

I

=85mA − 5.8 − dB

line

receiving amplifiers with respect to
I

=15mA

line

∆G

vtxm

microphone amplifier gain reduction − 80 − dB

1997 Mar 27 2

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

ORDERING INFORMATION

TYPE

NUMBER

TEA1113 DIP16
TEA1113T SO16

BLOCK DIAGRAM

handbook, full pagewidth

NAME DESCRIPTION VERSION

plastic dual in-line package; 16 leads (300 mil)
plastic small outline package; 16 leads; body width 3.9 mm

9

IR

V− I

PACKAGE

GAR

QR

15 14 8

MUTE

TEA1113

SOT38-4

SOT109-1

V

CC

16

DTMF

MIC+

MIC−

DLS/MMUTE

V− I

7

12

11

6

ATT.

DYNAMIC

LIMITER

V− I

V− I

AGC

CIRCUIT

REFERENCE

LOW VOLTAGE

CIRCUIT

CURRENT

1

LN

5

GAS

4

REG

TEA1113

LED

DRIVER

231013

V

EE

AGC

I

LED

MBG018

SLPE

Fig.1 Block diagram.

1997 Mar 27 3

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

PINNING

SYMBOL PIN DESCRIPTION

LN 1 positive line terminal
SLPE 2 slope (DC resistance) adjustment
I

LED

REG 4 line voltage regulator decoupling
GAS 5 sending gain adjustment
DLS/

MMUTE
DTMF 7 dual-tone multi-frequency input
MUTE 8 mute input to select speech or

IR 9 receiving amplifier input
AGC 10 automatic gain control - line loss

MIC− 11 inverting microphone amplifier

MIC+ 12 non-inverting microphone amplifier

V

EE

QR 14 receiving amplifier output
GAR 15 receive gain adjustment
V

CC

3 available output current to drive an

LED

6 dynamic limiter timing adjustment

and microphone mute input

dialling mode (active LOW)

compensation

input

input

13 negative line terminal

16 supply voltage for speech circuit

and peripherals

handbook, halfpage

DLS/MMUTE

LN

1
2

SLPE

3

I

LED

4

REG

GAS

DTMF
MUTE

5
6
7
8

TEA1113

MBG015

Fig.2 Pin configuration.

V

16

CC

15

GAR

14

QR

13

V

EE

12

MIC+

11

MIC−

10

AGC

9

IR

TEA1113

FUNCTIONAL DESCRIPTION

All data given in this chapter are typical values, except
when otherwise specified.

Supply (pins LN, SLPE, V

and REG)

CC

The supply for the TEA1113 and its peripherals is obtained
from the telephone line.

The ICs generate a stabilized reference voltage (V

ref

)
between pins LN and SLPE. This reference voltage is
equal to 3.7 V, is temperature compensated and can be
adjusted by means of an external resistor (RVA). It can be
increased by connecting the RVA resistor between
pins REG and SLPE, or decreased by connecting the R

VA

resistor between pins REG and LN. The voltage at
pin REG is used by the internal regulator to generate the
stabilized reference voltage and is decoupled by a
capacitor (C

) which is connected to VEE. This

REG

capacitor, converted into an equivalent inductance (see
Section “Set impedance”), realizes the set impedance
conversion from its DC value (R

) to its AC value

SLPE

1997 Mar 27 4

in the audio-frequency range). The voltage at pin

(R

CC

SLPE is proportional to the line current. Figure 3 illustrates
the supply configuration.

The IC regulates the line voltage at the pin LN, and it can
be calculated as follows:

V
I

I

V

LN

SLPEIlineICC

line

refRSLPEISLPE

– Ip– I∗– I

==

: line current

×+=

I+

LED

sh

ICC: current consumption of the IC
Ip: supply current for peripheral circuits
I*: current consumed between LN and V
I

: supply current for the LED component

LED

EE

Ish: the excess line current shunted to SLPE (and VEE)
via LN.

Philips Semiconductors Product specification

Low voltage versatile telephone

TEA1113

transmission circuit with dialler interface

The preferred value for R
microphone and DTMF gains, the LED supply current characteristic, the gain control characteristics, the sidetone level
and the maximum output swing on the line.

R

R

line

I

line

exch

V

exch

handbook, full pagewidth

is 20 Ω. Changing R

SLPE

I

LED

TEA1113

I

LED

DRIVER

LED

I

SLPE

will affect more than the DC characteristics; it also influences the

SLPE

R

CC

619 Ω

LN

from preamp

I

sh

SLPE

R

SLPE

20 Ω

REG

C

REG

4.7 µF

V

CC

I

CC

*

I

V

EE

C

VCC

100 µF

MBG019

peripheral

circuits

I

p

(1) RVA between REG and SLPE.
(2) No RVA.
(3) RVA between REG and LN.

5.5

handbook, halfpage

V

ref

(V)

4.5

3.5

2.5

4

10

Fig.3 Supply configuration.

(1)

(2)

(3)

5

10

6

10

RVA (Ω)

MGD188

7

10

Fig.4 Reference voltage adjustment by a RVA resistor.

1997 Mar 27 5

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

The internal circuitry of the TEA1113 is supplied from
pin VCC. This voltage supply is derived from the line
voltage by means of a resistor (RCC) and must be
decoupled by a capacitor C
supply peripheral circuits such as dialling or control
circuits. The VCC voltage depends on the current
consumed by the IC and the peripheral circuits as shown
by the formula (see also Figs 5 and 6). R
impedance of the voltage supply point, and I
current consumed by the output stage of the earpiece
amplifier.

V

V

CC

CCO

V

CCORCCintIpIrec

VLNR

×–=

CCICC

The DC line current flowing into the set is determined by
the exchange supply voltage (V
resistance (R
(R

) and the reference voltage (V

line

), the DC resistance of the telephone line

exch

below 8 mA, the internal reference voltage (generating
V

) is automatically adjusted to a lower value. This means

ref

that more sets can operate in parallel with DC line voltages
(excluding the polarity guard) down to an absolute
minimum voltage of 1.6 V. At currents below 8 mA, the
circuit has limited sending and receiving levels. This is
called the low voltage area.

. It may also be used to

VCC

is the internal

CCint

rec

–()×–=

), the feeding bridge

exch

). With line currents

ref

is the

TEA1113

Set impedance

In the audio frequency range, the dynamic impedance is
mainly determined by the RCC resistor. The equivalent
impedance of the circuits is illustrated in Fig.7.

LED supply (pin I

The TEA1113 gives an on-hook/off-hook status indication.
This is achieved by a current made available to drive an
LED connected between pins I
voltage area, which corresponds to low line current
conditions, no current is available for this LED. For line
currents higher than a threshold current, the I
increases proportionally to the line current (with a ratio of
one third).The I
(see Fig.8).

For 17 mA < I

I

=

LED

line

I

17–

line

---------------------­3

This LED driver is referenced to SLPE. Consequently, all
the I

supply current will flow through the R

LED

The AGC characteristics are not disturbed (see Fig.3 for
the supply configuration).

Microphone amplifier (pins MIC+, MIC− and GAS)

)

LED

and LN. In the low

LED

LED

current is internally limited to 19.5 mA

LED

< 77 mA:

SLPE

current

resistor.

handbook, halfpage

V

R

CCO

Fig.5 VCC voltage supply for peripherals.

CCintVCC

V

EE

I

rec

PERIPHERAL

CIRCUIT

I

P

MBE792

The TEA1113 has symmetrical microphone inputs.
The input impedance between pins MIC+ and MIC− is
64 kΩ (2 × 32 kΩ). The voltage gain from pins MIC+/MIC−
to pin LN is set to 51.8 dB (typ). The gain can be
decreased by connecting an external resistor R

GAS

between pins GAS and REG. The adjustment range is
13 dB. A capacitor C

connected between pins GAS

GAS

and REG can be used to provide a first-order low-pass
filter. The cut-off frequency corresponds to the time
constant C

GAS

× (R

GASint

// R

GAS

). R

is the internal

GASint

resistor which sets the gain with a typical value of 69 kΩ.
Automatic gain control is provided on this amplifier for line

loss compensation.

Dynamic limiter and microphone mute
(pin DLS/

MMUTE)

The dynamic limiter only acts on the microphone channel,
this is to prevent clipping of the line signal. To prevent
distortion, the microphone gain is rapidly reduced when
peaks on the line signal exceed an internally determined
threshold level or when the current in the transmit output
stage is insufficient. The time in which the gain reduction
is realized is very short (attack time). The microphone
channel stays in the reduced gain condition until the peaks

1997 Mar 27 6

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

on the line signal remain below the threshold level.
The microphone gain then returns to its nominal value after
a time determined by the capacitor C

The maximum output swing on the line depends on the DC
voltage setting (V

). The internal threshold level is

ref

automatically adapted.
A LOW level on pin DLS/MMUTE inhibits the microphone

inputs MIC+ and MIC− without affecting the DTMF and
receiving inputs. Removing the LOW level from pin
DLS/MMUTE provides the normal function of the
microphone amplifier after a short time which is
determined by capacitor C

. With the value of the

DLS

capacitor at 470 nF, the release time is in the order of a
few tenths of a millisecond. The microphone mute function
can be realized by a simple switch as illustrated in Fig.9.

Receiving amplifier (pins IR, GAR and QR)

The receiving amplifier has one input (IR) and one output
(QR). The input impedance between pin IR and pin V
20 kΩ. The voltage gain from pin IR to pin QR is fixed to

31.3 dB (typ). The gain can be decreased by connecting
an external resistor R

between pins GAR and QR; the

GAR

adjustment range is 12 dB. Two external capacitors C
(connected between GAR and QR) and C
between GAR and VEE) ensure stability. The C
capacitor provides a first-order low-pass filter. The cut-off
frequency corresponds to the time constant
C

GAR

× (R

GARint

// R

GAR

). R

is the internal resistor

GARint

which sets the gain with a typical value of 100 kΩ.
The relationship C

GARS

=10×C

GAR

ensure stability.

(release time).

DLS

EE

(connected

GARS

GAR

must be fulfilled to

is

GAR

TEA1113

The IC can be used with different configurations of feeding
bridge (supply voltage and bridge resistance) by
connecting an external resistor R
and VEE. This resistor enables the I
currents to be increased (the ratio between I
not affected by the resistor). The AGC function is disabled
when pin AGC is left open-circuit.

Mute function (pin

MUTE)

The mute function performs the switching between the
speech mode and the dialling mode. When MUTE is LOW
or open-circuit, the DTMF input is enabled and the
microphone and receiving amplifiers inputs are disabled.

MUTE is HIGH, the microphone and receiving

When
amplifiers inputs are enabled while the DTMF input is
disabled.

DTMF amplifier (pin DTMF)

When the DTMF amplifier is enabled, dialling tones may
be sent on line. These tones can be heard in the earpiece
at a low level (confidence tone).

The TEA1113 has an asymmetrical DTMF input. The input
impedance between DTMF and V
gain from pin DTMF to pin LN is 25.4 dB. When the
resistor R

is connected, to decrease the microphone

GAS

gain, the DTMF gain varies in the same way (the DTMF
gain is 26.4 dB lower than the microphone gain with no
AGC control).

The automatic gain control has no effect on the DTMF
amplifier.

between pins AGC

AGC

and I

start

is 20 kΩ. The voltage

EE

stop

start

line

and I

stop

is

The output voltage of the receiving amplifier is specified for
continuous wave drive. The maximum output swing
depends on the DC line voltage, the RCC resistor, the I

CC

current consumption of the circuit, the Ip current
consumption of the peripheral circuits and the load
impedance.

Automatic gain control is provided on this amplifier for line
loss compensation.

Automatic gain control (pin AGC)

The TEA1113 performs automatic line loss compensation.
The automatic gain control varies the gain of the
microphone amplifier and the gain of the receiving
amplifier in accordance with the DC line current.
The control range is 5.8 dB (which corresponds
approximately to a line length of 5 km for a 0.5 mm
diameter twisted-pair copper cable with a DC resistance of
176 Ω/km and an average attenuation of 1.2 dB/km).

1997 Mar 27 7

Sidetone suppression

The TEA1113 anti-sidetone network comprising

// Z

, R

, R

, R

, R

R

CC

line

ast1

ast2

ast3

SLPE

and Z

(see Fig.10)

bal

suppresses the transmitted signal in the earpiece.
Maximum compensation is obtained when the following
conditions are fulfilled:

× R

R

SLPERast1

R

k

=

-----------------------------------------------------------------------

bal

kZ

Z

R

ast2

×=

ast3RSLPE

×()

R

ast1RSLPE

line

R

CC

+()×=

ast2Rast3

+()×()

The scale factor k is chosen to meet the compatibility with
a standard capacitor from the E6 or E12 range for Z

bal

.

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

In practice, Z
the line length. Therefore, the value chosen for Z
be for an average line length which gives satisfactory
sidetone suppression with short and long lines.
The suppression also depends on the accuracy of the
match between Z
line.

The anti-sidetone network for the TEA1113 (as shown in
Fig.14) attenuates the receiving signal from the line by
32 dB before it enters the receiving amplifier.
The attenuation is almost constant over the whole audio
frequency range.

A Wheatstone bridge configuration (see Fig.11) may also
be used.

More information on the balancing of an anti-sidetone
bridge can be obtained in our publication

Handbook for Wired Telecom Systems, IC03b”

number 9397 750 00811.

varies considerably with the line type and

line

bal

and the impedance of the average

bal

“Applications

, order

should

TEA1113

REG

LN

ref

R

P

REG V

C

REG

4.7 µF

L

EQ

V

SLPE

R

SLPE

20 Ω

V

EE

× R

× RP; RP= internal resistance; RP= 15.5kΩ.

SLPE

R

CC

619 Ω

CC

C

VCC

100 µF

MBE788

handbook, halfpage

Leq=C

Fig.7 Equivalent impedance between LN and VEE.

handbook, halfpage

4

I

p

(mA)

3

2

1

0

01234

(1) With RVA resistor.
(2) Without RVA resistor.

(2)

MBG016

(1)

VCC (V)

Fig.6 Typical current IP available from VCC for

peripheral circuits at I

=15mA.

line

1997 Mar 27 8

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

I

line

MBE784

(mA)

100

handbook, halfpage

I

(mA)

80

60

40

20

0

0 100

I

SLPE

I

sh

I

LED

20 40 60 80

handbook, halfpage

DLS/MMUTE

V

EE

TEA1113

C

DLS

470 nF

MBG017

R

DLS

3.3 kΩ

Fig.8 Available current to drive an LED.

handbook, full pagewidth

Fig.9 Microphone mute function.

LN

R

R

CC

SLPE

SLPE

Z

line

V

EE

R

ast1

I

m

R

ast3

IR

Z

R

ast2

Z

bal

ir

MBE787

Fig.10 Equivalent circuit of TEA1113 anti-sidetone bridge.

1997 Mar 27 9

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

handbook, full pagewidth

R

R

CC

SLPE

Z

line

V

EE

Fig.11 Equivalent circuit of an anti-sidetone network in a Wheatstone bridge configuration.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

LN

SLPE

Z

bal

I

m

R

ast1

TEA1113

IR

Z

ir

R

A

MBE786

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

LN

positive continuous line voltage VEE− 0.4 12.0 V
repetitive line voltage during switch-on or

− 0.4 13.2 V

V

EE

line interruption

V

n(max)

I

line

maximum voltage on pins I
maximum voltage on all other pins V
line current R

, SLPE VEE− 0.4 VLN+ 0.4 V

LED

− 0.4 VCC+ 0.4 V

EE

SLPE

=20Ω;

− 140 mA

see Figs 12 and 13

P

tot

total power dissipation T

amb

=75°C;

see Figs 12 and 13
TEA1113 − 625 mW
TEA1113T − 416 mW

T

stg

T

amb

IC storage temperature −40 +125 °C
operating ambient temperature −25 +75 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-a

thermal resistance from junction to ambient in free air (TEA1113) 80 K/W
thermal resistance from junction to ambient in free air mounted on epoxy

130 K/W

board 40.1 × 19.1 × 1.5 mm (TEA1113T)

1997 Mar 27 10

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

150

handbook, halfpage

I

line

(mA)

110

70

30

246810

(3)(4)

(2)

VLN − V

MBE782

(1)

12

(V)

SLPE

LINE T

(°C) P

amb

tot

(1) 45 1000
(2) 55 875
(3) 65 750
(4) 75 625

TEA1113

(mW)

150

handbook, halfpage

I

LN

(mA)

130

110

90

70

50

30

212

Fig.12 Safe operating area (TEA1113).

MLC202

(1)
(2)
(3)

(4)

46810

V

LNVSLPE

(V)

LINE T

(°C) P

amb

tot

(1) 45 666
(2) 55 583
(3) 65 500
(4) 75 416

(mW)

Fig.13 Safe operating area (TEA1113T).

1997 Mar 27 11

Philips Semiconductors Product specification

Low voltage versatile telephone

TEA1113

transmission circuit with dialler interface

CHARACTERISTICS

I

= 15 mA; VEE=0V; R

line

T

=25°C; unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply (pins V

V

ref

, VCC, SLPE and REG)

LN

stabilized voltage between LN
and SLPE

V

LN

V

LN(exR)

∆V

LN(T)

DC line voltage I

DC line voltage with an external
resistor R

VA

DC line voltage variation with

temperature referred to 25 °C
I
V
R

CC

CC

CCint

internal current consumption VCC= 3.2 V − 1.3 1.6 mA

supply voltage for peripherals Ip= 0 mA 2.8 3.2 − V

equivalent supply voltage

impedance

SLPE

=20Ω; C

= 470 nF; AGC pin connected to VEE; Z

DLS

=1mA − 1.6 − V

line

=4mA − 2.5 − V

I

line

= 15 mA 3.7 4 4.3 V

I

line

= 140 mA −−7.0 V

I

line

R

VA(LN−REG)

R

VA(SLPE−REG

T

amb

=82kΩ−3.6 − V

)=27kΩ− 4.75 − V

= −25 to +75 °C −±30 − mV

Ip= 0.5 mA − 550 620 Ω

= 600 Ω; f = 1 kHz;

line

3.45 3.7 3.95 V

LED supply (pin I

I

line(h)

I

line(l)

I

LED(max)

highest line current for

I

LED

lowest line current for maximum

I

LED

maximum supply current

)

LED

< 0.6 mA

− 18 − mA

− 76 − mA

− 19.5 − mA

available

Microphone amplifier (pins MIC+, MIC− and GAS)

 input impedance

Z

i

differential between pins

− 64 − kΩ

MIC+ and MIC−

G

∆G

vtx

vtx(f)

single-ended between pins
MIC+/MIC− and V

EE

voltage gain from MIC+/MIC− toLNV

gain variation with frequency

= 2 mV (RMS) 50.6 51.8 53 dB

MIC

f = 300 to 3400 Hz −±0.2 − dB

− 32 − kΩ

referred to 1 kHz
∆G

vtx(T)

gain variation with temperature

T

= −25 to +75 °C −±0.3 − dB

amb

referred to 25 °C
CMRR common mode rejection ratio − 80 − dB
∆G

vtxr

gain voltage reduction range external resistor connected

−−13 dB

between GAS and REG

V

notx

noise output voltage at pin LN;

pins MIC+ / MIC− shorted

psophometrically weighted
(P53 curve)

−−70.5 − dBmp

through 200 Ω

1997 Mar 27 12

Philips Semiconductors Product specification

Low voltage versatile telephone

TEA1113

transmission circuit with dialler interface

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Dynamic limiter and microphone mute (pin DLS/MMUTE)

DYNAMIC LIMITER BEHAVIOUR
V

LN(max)(p-p)

THD total harmonic distortion V

t

att

t

rel

MICROPHONE MUTE INPUT
∆G

vtxm

V

IL

I

IL

t

rel

maximum output voltage swing

on the line (peak-to-peak value)

attack time, V

jumps from

MIC

I

= 15 mA; V

line

=4mA − 1.6 −

I

line

= 4 mV (RMS) + 10 dB −−2%

MIC

= 4 mV (RMS) + 15 dB −−10 %

V

MIC

C

= 470 nF − 1.5 5 ms

DLS

= 3.7 V 3.8 4.65 − V

ref

2 mV up to 20 mV

release time, V

jumps from

MIC

C

= 470 nF 50 150 − ms

DLS

20 mV down to 2 mV

gain reduction DLS/MMUTE = LOW − 80 − dB

LOW level input voltage VEE− 0.4 − VEE+ 0.3 V

LOW level input current 40 60 −µA

release time after a LOW level

C

= 470 nF − 30 − ms

DLS

on pin DLS/MMUTE

Receiving amplifier (pins IR, QR and GAR)

Zi input impedance − 20 − kΩ
G
∆G

vrx

vrx(f)

voltage gain from IR to QR VIR= 4 mV (RMS) 30.3 31.3 32.3 dB

gain variation with frequency

f = 300 to 3400 Hz −±0.2 − dB

referred to 1 kHz
∆G

vrx(T)

gain variation with temperature

T

= −25 to +75 °C −±0.3 − dB

amb

referred to 25 °C
∆G

vrxr

gain voltage reduction range external resistor connected

−−12 dB

between GAR and QR

V

o(rms)

maximum output voltage

(RMS value)

Ip= 0 mA sine wave drive;
RL= 150 Ω; THD = 2%

= 0 mA sine wave drive;

I

p

240 290 − mV

350 410 − mV

RL= 450 Ω; THD = 2%

V

norx(rms)

noise output voltage at pin QR

(RMS value)

RL= 150 Ω;
IR open-circuit;

−−86 − dBVp

psophometrically weighted
(P53 curve)

Automatic gain control (pin AGC)

∆G

vtrx

gain control range for

I

=85mA − 5.8 − dB

line

microphone and receiving

amplifiers with respect to

I

=15mA

line

I

start

highest line current for maximum

− 25 − mA

gain
I

stop

lowest line current for minimum

− 59 − mA

gain

1997 Mar 27 13

Philips Semiconductors Product specification

Low voltage versatile telephone

TEA1113

transmission circuit with dialler interface

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

DTMF amplifier (pin DTMF)

 input impedance − 20 − kΩ

Z

i

G

∆G

vdtmf

vdtmf(f)

voltage gain from DTMF to LN V

gain variation with frequency

referred to 1 kHz
∆G

vdtmf(T)

gain variation with temperature

referred to 25 °C
G

vct

voltage gain from DTMF to QR

(confidence tone)

Mute function (pin

V

IL

V

IH

I

MUTE

∆G

vtrxm

LOW level input voltage VEE− 0.4 − VEE+ 0.3 V

HIGH level input voltage VEE+ 1.5 − VCC+ 0.4 V

input current MUTE = HIGH − 1.25 3 µA

gain reduction for microphone

and receiving amplifiers

MUTE)

= 25 mV (RMS);

DTMF

24.2 25.4 26.6 dB

MUTE = LOW
f = 300 to 3400 Hz −±0.2 − dB

T

= −25 to +75 °C −±0.5 − dB

amb

RL= 150 Ω;
V

= 25 mV (RMS)

DTMF

−−18 − dB

MUTE = LOW − 80 − dB

1997 Mar 27 14

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

APPLICATION INFORMATION

pd5

R

470 kΩ

pd4

R

470 kΩ

BC558

RCC619 Ω

signal

from

dial and

control

circuits

supply for

peripheral

VCC

C

circuits

TEA1113

PD

input

pd6

R

68 kΩ

R

R

pd3

pd2

MGD020

1 MΩ

470 kΩ

BC547

BF473

100 µF

DLS

3.3 kΩ

R

handbook, full pagewidth

R

R

ast1

prot

4 x

QR

C

BAS11

GAR

ast2

R

V

100 pF

CC

DTMF

TEA1113



GAR

MIC+

3.92 kΩ

GARS

C

MUTE

MIC−

1 nF

DLS/MMUTE

EE

V

SLPE GAS REG AGC

BZV85C10

C

R

GAS

ast3

C

DLS

470 nF

REG

C

100 pF

SLPE

R

390 Ω

4.7 µF

20 Ω

bal

Z

pd1

R

BSN254

470 kΩ

BZX79C10

BC547

limit

R

3.9 Ω

Fig.14 Typical application of the TEA1113 in sets with Pulse Dialling or Flash facilities.

LED

I

LN

IR

IR

C

130 kΩ

10 Ω

DR

95 V

V

a/b

line

Telephone

b/a

1997 Mar 27 15

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

PACKAGE OUTLINES

DIP16: plastic dual in-line package; 16 leads (300 mil)

D

seating plane

L

Z

16

e

b

TEA1113

SOT38-4

M

E

A

2

A

A

1

w M

b

1

b

2

9

c

(e )

1

M

H

pin 1 index

1

0 5 10 mm

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A

A

A

UNIT

max.

mm

inches

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

OUTLINE
VERSION

SOT38-4

12

min.

max.

IEC JEDEC EIAJ

b

1.73

1.30

0.068

0.051

b

1

0.53

0.38

0.021

0.015

b

cD E e M

2

0.36

1.25

0.23

0.85

0.014

0.049

0.009

0.033

REFERENCES

8

scale

(1) (1)

19.50

18.55

0.77

0.73

6.48

6.20

0.26

0.24

E

(1)

Z

L

e

1

M

3.60

8.25

3.05

7.80

0.14

0.32

0.12

0.31

EUROPEAN

PROJECTION

E

10.0

0.39

0.33

H

8.3

w

max.

0.2542.54 7.62

0.764.2 0.51 3.2

0.010.10 0.30

0.0300.17 0.020 0.13

ISSUE DATE

92-11-17
95-01-14

1997 Mar 27 16

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

SO16: plastic small outline package; 16 leads; body width 3.9 mm

D

c

y

Z

16

9

TEA1113

SOT109-1

E

H

E

A

X

v M

A

pin 1 index

1

e

0 2.5 5 mm

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

A

max.

1.75

0.069

A1A2A

0.25

1.45

0.10

1.25

0.0098

0.057

0.0039

0.049

0.25

0.01

b

3

p

0.49

0.25

0.36

0.19

0.0098

0.019

0.0075

0.014

UNIT

inches

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

(1)E(1) (1)

cD

10.0

9.8

0.39

0.38

8

b

p

scale

eHELLpQZywv θ

4.0

1.27

3.8

0.16

0.050

0.15

w M

6.2

5.8

0.24

0.23

A

2

A

1

1.0

 0.7

1.05

0.4

0.039

0.041

0.016

L

detail X

0.25

0.6

0.028

0.01 0.004

0.020

Q

(A )

L

p

0.25 0.1

0.01

A

3

θ

0.7

0.3

0.028

0.012

o

8

o

0

OUTLINE
VERSION

SOT109-1

IEC JEDEC EIAJ

076E07S MS-012AC

REFERENCES

1997 Mar 27 17

EUROPEAN

PROJECTION

ISSUE DATE

91-08-13
95-01-23

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

DIP

OLDERING BY DIPPING OR BY WA VE

S
The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

EPAIRING SOLDERED JOINTS

R
Apply a low voltage soldering iron (less than 24 V) to the

lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.

SO

REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO

packages.

(order code 9398 652 90011).

). If the

stg max

TEA1113

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

AVE SOLDERING

W
Wave soldering techniques can be used for all SO

packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be
parallel to the solder flow.

• The package footprint must incorporate solder thieves at
the downstream end.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

EPAIRING SOLDERED JOINTS

R
Fix the component by first soldering two diagonally-

opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

1997 Mar 27 18

Philips Semiconductors Product specification

Low voltage versatile telephone

TEA1113

transmission circuit with dialler interface

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Mar 27 19

Philips Semiconductors – a worldwide company

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax.[phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box213,

Tel. [phone], Fax.[phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r.1211, Volodarski Str.6,

220050 MINSK, Tel.[phone],Fax. [phone]

Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 JamesBourchier Blvd., 1407SOFIA,
Tel. [phone], Fax.[phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone]

China/Hong Kong: 501 HongKong Industrial Technology Centre,
72 TatChee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone],Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard80, PB 1919, DK-2300COPENHAGEN S,

Tel. [phone], Fax.[phone]
Finland: Sinikalliontie 3, FIN-02630ESPOO,

Tel. [phone],Fax. [phone]/xxx
France: 4 Ruedu Port-aux-Vins, BP317, 92156SURESNES Cedex,

Tel. [phone],Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097HAMBURG,

Tel. [phone],Fax. [phone]
Greece: No. 15,25th MarchStreet, GR 17778TAVROS/ATHENS,

Tel. [phone], Fax.[phone]

Hungary: see Austria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.

Worli, MUMBAI 400018, Tel. [phone], Fax. [phone]

Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. [phone], Fax.[phone]
Israel: RAPAC Electronics, 7Kehilat SalonikiSt, TEL AVIV61180,

Tel. [phone], Fax.[phone]
Italy: PHILIPS SEMICONDUCTORS, Piazza IVNovembre 3,

20124 MILANO, Tel.[phone],Fax. [phone]
Japan: Philips Bldg13-37, Kohnan 2-chome, Minato-ku, TOKYO108,

Tel. [phone], Fax.[phone]
Korea: Philips House, 260-199Itaewon-dong, Yongsan-ku, SEOUL,

Tel. [phone], Fax.[phone]
Malaysia: No. 76Jalan Universiti, 46200PETALING JAYA, SELANGOR,

Tel. [phone],Fax. [phone]
Mexico: 5900 GatewayEast, Suite 200, ELPASO, TEXAS 79905,

Tel. [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600PB EINDHOVEN, Bldg.VB,

Tel. [phone], Fax.[phone]
New Zealand: 2 WagenerPlace, C.P.O. Box1041, AUCKLAND,

Tel. [phone], Fax.[phone]
Norway: Box 1, Manglerud0612, OSLO,

Tel. [phone], Fax.[phone]
Philippines: Philips Semiconductors Philippines Inc.,

106 ValeroSt. SalcedoVillage, P.O. Box2108 MCC, MAKATI,
Metro MANILA, Tel.[phone],Fax. [phone]

Poland: Ul. Lukiska10, PL 04-123WARSZAWA,
Tel. [phone], Fax.[phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva35A, 119048 MOSCOW,

Tel. [phone], Fax.[phone]
Singapore: Lorong 1, ToaPayoh, SINGAPORE 1231,

Tel. [phone],Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 MainRoad Martindale,

2092 JOHANNESBURG, P.O.Box 7430 Johannesburg2000,
Tel. [phone], Fax.[phone]

South America: Rua doRocio 220, 5thfloor, Suite 51,
04552-903 SãoPaulo, SÃO PAULO- SP, Brazil,
Tel. [phone], Fax.[phone]

Spain: Balmes 22, 08007BARCELONA,
Tel. [phone], Fax.[phone]

Sweden: Kottbygatan 7, Akalla, S-16485STOCKHOLM,
Tel. [phone], Fax.[phone]

Switzerland: Allmendstrasse 140, CH-8027ZÜRICH,
Tel. [phone], Fax.[phone]

Taiwan: Philips Semiconductors, 6F, No. 96, ChienKuo N.Rd., Sec.1,
TAIPEI, Taiwan Tel. [phone], Fax.[phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-BangnaRoad Prakanong, BANGKOK10260,
Tel. [phone], Fax.[phone]

Turkey: Talatpasa Cad. No. 5, 80640GÜLTEPE/ISTANBUL,
Tel. [phone], Fax.[phone]

Ukraine: PHILIPS UKRAINE, 4 PatriceLumumba str., Building B, Floor7,
252042 KIEV, Tel.[phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 BathRoad, Hayes,
MIDDLESEX UB35BX, Tel. [phone], Fax. [phone]

United States: 811 EastArques Avenue, SUNNYVALE, CA94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors, Marketing &Sales Communications,
Building BE-p, P.O.Box 218, 5600MD EINDHOVEN, TheNetherlands, Fax. [phone]

© Philips Electronics N.V. 1997 SCA53
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 417027/1200/02/pp20 Date of release: 1997 Mar27 Document order number: 9397 750 00632