Datasheet TEA1112T, TEA1112AT, TEA1112A Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TEA1112; TEA1112A

Low voltage versatile telephone
transmission circuits with dialler
interface

Product specification
Supersedes data of 1996 Feb 16
File under Integrated Circuits, IC03

1997 Mar 26

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuits with dialler interface

FEATURES

• Low DC line voltage; operates down to 1.6 V (excluding
polarity guard)

• Voltage regulator with adjustable DC voltage

• Provides a supply for external circuits

• Symmetrical high impedance inputs (64 kΩ) for

dynamic, magnetic or piezo-electric microphones

• Asymmetrical high impedance input (32 kΩ) for electret
microphones

• DTMF input with confidence tone

• Mute input for pulse or DTMF dialling (MUTE for

TEA1112 and MUTE for TEA1112A)

• Receiving amplifier for dynamic, magnetic or
piezo-electric earpieces

• AGC line loss compensation for microphone and
earpiece amplifiers

• LED on-hook/off-hook status indication

• Microphone mute function (MMUTE for TEA1112 and

MMUTE for TEA1112A).

APPLICATION

• Line powered telephone sets, cordless telephones, fax
machines and answering machines.

GENERAL DESCRIPTION

The TEA1112; TEA1112A are bipolar integrated circuits
that perform all speech and line interface functions
required in fully electronic telephone sets. They perform
electronic switching between speech and dialling. The ICs
operate at a line voltage down to 1.6 V DC (with reduced
performance) to facilitate the use of telephone sets
connected in parallel.

A current (proportional to the line current and internally
limited to a typical value of 19.5 mA) is available to drive
an LED which indicates the on-hook/off-hook status.

The microphone amplifier can be disabled during speech
condition by means of a microphone mute function.

All statements and values refer to all versions unless
otherwise specified.

TEA1112; TEA1112A

QUICK REFERENCE DATA

= 15 mA; VEE=0V; R

I

line

=20Ω; AGC pin connected to VEE; Z

SLPE

= 600 Ω; f = 1 kHz; T

line

amb

=25°C;

unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

line

line current operating range normal operation 11 − 140 mA

with reduced performance 1 − 11 mA

I

LED(max)

V

LN

I

CC

V

CC

G

vtrx

∆G

vtrx

maximum supply current available I

=18mA − 0.5 − mA

line

I

>76mA − 19.5 − mA

line

DC line voltage 3.35 3.65 3.95 V
internal current consumption VCC= 2.9 V − 1.15 1.4 mA
supply voltage for peripherals Ip=0mA − 2.9 − V
typical voltage gain range

microphone amplifier V
receiving amplifier V

gain control range for microphone and

= 2 mV (RMS) 38.8 − 51.8 dB

MIC

= 6 mV (RMS) 19.2 − 31.2 dB

IR

I

=85mA − 5.8 − dB

line

receiving amplifiers with respect to
I

=15mA

line

∆G

vtxm

microphone amplifier gain reduction − 80 − dB

1997 Mar 26 2

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuits with dialler interface

ORDERING INFORMATION

TYPE

NUMBER

TEA1112 DIP16
TEA1112A DIP16
TEA1112T SO16
TEA1112AT SO16

BLOCK DIAGRAM

handbook, full pagewidth

NAME DESCRIPTION VERSION

plastic dual in-line package; 16 leads (300 mil)
plastic dual in-line package; 16 leads (300 mil)
plastic small outline package; 16 leads; body width 3.9 mm
plastic small outline package; 16 leads; body width 3.9 mm

9

IR

V− I

PACKAGE

GAR

QR

15 14 8

MUTE

or

MUTE

TEA1112; TEA1112A

SOT38-4

SOT38-4
SOT109-1
SOT109-1

V

CC

16

DTMF

MMUTE
MMUTE

MIC

MIC

or

V− I

7

ATT.

V− I

12

V− I

11

6

V

EE

MICRO

MUTE

AGC

CIRCUIT

AGC

LOW VOLTAGE

CIRCUIT

DRIVER

I

LED

LED

CURRENT

REFERENCE

TEA1112

TEA1112A

1

5

4

231013
SLPE

LN

GAS

REG

MBE793

Fig.1 Block diagram.

1997 Mar 26 3

Philips Semiconductors Product specification

Low voltage versatile telephone

TEA1112; TEA1112A

transmission circuits with dialler interface

PINNING

SYMBOL

TEA1112 TEA1112A

LN 1 1 positive line terminal
SLPE 2 2 slope (DC resistance) adjustment
I

LED

3 3 available output current to drive a LED
REG 4 4 line voltage regulator decoupling
GAS 5 5 sending gain adjustment
MMUTE 6 − microphone mute input
MMUTE − 6 microphone mute input (active LOW)
DTMF 7 7 dual-tone multi-frequency input
MUTE 8 − mute input to select speech or dialling mode
MUTE − 8 mute input to select speech or dialling mode (active LOW)
IR 9 9 receiving amplifier input
AGC 10 10 automatic gain control/line loss compensation
MIC− 11 11 inverting microphone amplifier input
MIC+ 12 12 non-inverting microphone amplifier input
V

EE

13 13 negative line terminal
QR 14 14 receiving amplifier output
GAR 15 15 receive gain adjustment
V

CC

16 16 supply voltage for speech circuit and peripherals

PIN

DESCRIPTION

handbook, halfpage

LN

SLPE

I

LED

REG
GAS

MMUTE

DTMF
MUTE

1
2
3
4
5
6
7
8

TEA1112

MBE791

V

16

CC

15

GAR

14

QR

13

V

EE

12

MIC+

11

MIC−

10

AGC

9

IR

Fig.2 Pin configuration (TEA1112).

1997 Mar 26 4

handbook, halfpage

Fig.3 Pin configuration (TEA1112A).

LN

SLPE

I

LED

REG

GAS

MMUTE

DTMF
MUTE

1
2
3
4

TEA1112A

5
6
7
8

MBE790

V

16

CC

15

GAR

14

QR

13

V

EE

12

MIC+

11

MIC−

10

AGC

9

IR

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuits with dialler interface

FUNCTIONAL DESCRIPTION

All data given in this chapter are typical values, except
when otherwise specified.

Supply (pins LN, SLPE, V

The supply for the TEA1112; TEA1112A and their
peripherals is obtained from the telephone line.

The ICs generate a stabilized reference voltage (V
between pins LN and SLPE. This reference voltage is
equal to 3.35 V, is temperature compensated and can be
adjusted by means of an external resistor (RVA). It can be
increased by connecting the RVA resistor between
pins REG and SLPE (see Fig.5), or decreased by
connecting the RVA resistor between pins REG and LN.
The voltage at pin REG is used by the internal regulator to
generate the stabilized reference voltage and is decoupled
by a capacitor (C

) which is connected to VEE. This

REG

capacitor, converted into an equivalent inductance (see
Section “Set impedance”), realizes the set impedance
conversion from its DC value (R
in the audio-frequency range). The voltage at pin SLPE is
proportional to the line current. Figure 4 illustrates the
supply configuration.

The ICs regulate the line voltage at pin LN, and can be
calculated as follows:

V

I

V

LN

SLPEIlineICC

refRSLPEISLPE

==

×+=

– Ip– I∗– I

and REG)

CC

SLPE

LED

)

ref

) to its AC value (R

I+

sh

CC

TEA1112; TEA1112A

Where:

= line current

I

line

ICC= current consumption of the IC
Ip= supply current for peripheral circuits
I* = current consumed between LN and V
I

= supply current for the LED component

LED

Ish= the excess line current shunted to SLPE (and VEE)
via LN.

The preferred value for R

is 20 Ω. Changing R

SLPE

affect more than the DC characteristics; it also influences
the microphone and DTMF gains, the LED supply current
characteristic, the gain control characteristics, the
sidetone level and the maximum output swing on the line.

The internal circuitry of the TEA1112; TEA1112A is
supplied from pin VCC. This voltage supply is derived from
the line voltage by means of a resistor (RCC) and must be
decoupled by a capacitor C

. It may also be used to

VCC

supply peripheral circuits such as dialling or control
circuits. The VCC voltage depends on the current
consumed by the IC and the peripheral circuits as shown
by the formula (see also Figs.6 and 7). R
internal impedance of the voltage supply point, and I
the current consumed by the output stage of the earpiece
amplifier.

V

CC

V

CC0

V

CC0RCCintIpIrec

VLNR

×–=

CCICC

–()×–=

CCint

EE

is the

SLPE

rec

will

is

R

line

handbook, full pagewidth

R

I

line

exch

V

exch

I

LED

TEA1112

TEA1112A

I

LED

LED

DRIVER

I

SLPE

I

sh

SLPE

LN

R

SLPE

20 Ω

R

15.5 kΩ

V

d

p

45.5 kΩ

Fig.4 Supply configuration.

1997 Mar 26 5

R

R

d

R

619 Ω

GASint

69 kΩ

CC

from pre amp

I*

REG

C

REG

4.7 µF

V

CC

I

CC

V

EE

C

VCC

100 µF

peripheral

circuits

MBE789

I

P

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuits with dialler interface

RVA (Ω)

MGD176

10

7

6.0

handbook, halfpage

V

ref

(V)

5.0

4.0

(1)

(2)

3.0

4

10

(1) Influence of RVA on V
(2) V

without influence of RVA.

ref

5

10

.

ref

6

10

Fig.5 Reference voltage adjustment by RVA.

TEA1112; TEA1112A

For line currents higher than a threshold, I
current increases proportionally to the line current (with a
ratio of one third). The I

current is internally limited to

LED

19.5 mA (see Fig.9). If no LED device is used in the
application, the I

For 17 mA < I

pin should be shorted to pin SLPE.

LED

I

17–

line

=

< 77 mA:

line

I

LED

---------------------­3

This LED driver is referenced to SLPE. Consequently, all
the I

supply current will flow through the R

LED

The AGC characteristics are not disturbed (see Fig.4).

Microphone amplifier (pins MIC+, MIC− and GAS)

The TEA1112; TEA1112A have symmetrical microphone
inputs. The input impedance between pins MIC+ and
MIC− is 64 kΩ (2 × 32 kΩ). The voltage gain from
pins MIC+/MIC− to pin LN is set at 51.8 dB (typ). The gain
can be decreased by connecting an external resistor R
between pins GAS and REG. The adjustment range is
13 dB. A capacitor C

connected between pins GAS

GAS

and REG can be used to provide a first-order low-pass
filter. The cut-off frequency corresponds to the time
constant C

GAS

× (R

GASint

// R

GAS

). R

GASint

resistor which sets the gain with a typical value of 69 kΩ.

, the I

LEDstart

resistor.

SLPE

is the internal

LED

GAS

The DC line current flowing into the set is determined by
the exchange supply voltage (V
resistance (R
(R

) and the reference voltage (V

line

), the DC resistance of the telephone line

exch

), the feeding bridge

exch

). With line currents

ref

below 7.5 mA, the internal reference voltage (generating
V

) is automatically adjusted to a lower value. This means

ref

that more sets can operate in parallel with DC line voltages
(excluding the polarity guard) down to an absolute
minimum voltage of 1.6 V. At currents below 7.5 mA, the
circuit has limited sending and receiving levels. This is
called the low voltage area.

Set impedance

In the audio frequency range, the dynamic impedance is
mainly determined by the R

resistor. The equivalent

CC

impedance of the circuits is illustrated in Fig.8.

LED supply (pin I

LED

)

The TEA1112; TEA1112A give an on-hook/off-hook status
indication. This is achieved by a current made available to
drive an LED connected between pins I

and LN. In the

LED

low voltage area, which corresponds to low line current
conditions, no current is available for this LED.

Automatic gain control is provided on this amplifier for line
loss compensation.

Microphone mute (pin MMUTE; TEA1112)

The microphone amplifier can be disabled by activating
the microphone mute function. When MMUTE is LOW, the
normal speech mode is entered, depending on the level on
MUTE (see Table 1). When MMUTE is HIGH, the
microphone amplifier inputs are disabled while the DTMF
input is enabled (no confidence tone is provided).
The voltage gain between LN and MIC+/MIC− is
attenuated; the gain reduction is 80 dB (typ).

Microphone mute (pin

MMUTE; TEA1112A)

The microphone amplifier can be disabled by activating
the microphone mute function. When MMUTE is LOW, the
microphone amplifier inputs are disabled while the DTMF
input is enabled (no confidence tone is provided).
The voltage gain between LN and MIC+/MIC− is
attenuated; the gain reduction is 80 dB (typ). When
MMUTE is HIGH, the normal speech mode is entered,
depending on the level on MUTE (see Table 1).

1997 Mar 26 6

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuits with dialler interface

Receiving amplifier (pins IR, GAR and QR)

The receiving amplifier has one input (IR) and one output
(QR). The input impedance between pin IR and pin VEE is
20 kΩ. The voltage gain from pin IR to pin QR is set at

31.2 dB (typ). The gain can be decreased by connecting
an external resistor R
adjustment range is 12 dB. Two external capacitors C
(connected between GAR and QR) and C
between GAR and VEE) ensure stability. The C
capacitor provides a first-order low-pass filter. The cut-off
frequency corresponds to the time constant
C

GAR

× (R

GARint

// R
which sets the gain with a typical value of 100 kΩ.
The relationship C

GARS

ensure stability.
The output voltage of the receiving amplifier is specified for

continuous wave drive. The maximum output swing
depends on the DC line voltage, the RCC resistor, the I
current consumption of the circuit, the Ip current
consumption of the peripheral circuits and the load
impedance.

Automatic gain control is provided on this amplifier for line
loss compensation.

Automatic gain control (pin AGC)

The TEA1112; TEA1112A perform automatic line loss
compensation. The automatic gain control varies the gain
of the microphone amplifier and the gain of the receiving
amplifier in accordance with the DC line current.
The control range is 5.8 dB (which corresponds
approximately to a line length of 5 km for a 0.5 mm
diameter twisted-pair copper cable with a DC resistance of
176 Ω/km and an average attenuation of 1.2 dB/km).
The ICs can be used with different configurations of
feeding bridge (supply voltage and bridge resistance) by
connecting an external resistor R
and VEE. This resistor enables the I
currents to be increased (the ratio between I
not affected by the resistor). The AGC function is disabled
when pin AGC is left open-circuit.

between pins GAR and QR; the

GAR

GARS

GAR

). R

=10×C

is the internal resistor

GARint

must be fulfilled to

GAR

between pins AGC

AGC

and I

start

start

(connected

GAR

line

stop

and I

stop

GAR

CC

is

TEA1112; TEA1112A

Mute function (pin MUTE; TEA1112)

The mute function performs the switching action between
the speech mode and the dialling mode. When MUTE is
LOW or open-circuit, the microphone and receiving
amplifiers inputs are enabled while the DTMF input is
disabled, depending on the MMUTE level (see Table 1).
When MUTE is HIGH, the DTMF input is enabled and the
microphone and receiving amplifiers inputs are disabled.

Mute function (pin

The mute function performs the switching between the
speech mode and the dialling mode. When MUTE is LOW
or open-circuit, the DTMF input is enabled and the
microphone and receiving amplifiers inputs are disabled.
When MUTE is HIGH, the microphone and receiving
amplifiers inputs are enabled while the DTMF input is
disabled, depending on the MMUTE level (see Table 1).

DTMF amplifier (pin DTMF)

When the DTMF amplifier is enabled, dialling tones may
be sent on line. These tones can be heard in the earpiece
at a low level (confidence tone).

The TEA1112; TEA1112A have an asymmetrical DTMF
input. The input impedance between DTMF and V
20 kΩ. The voltage gain from pin DTMF to pin LN is

25.5 dB. When an external resistor is connected between
pins REG and GAS to decrease the microphone gain, the
DTMF gain varies in the same way (the DTMF gain is

26.3 dB lower than the microphone gain with no AGC
control).

The automatic gain control has no effect on the DTMF
amplifier.

MUTE; TEA1112A)

EE

is

1997 Mar 26 7

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuits with dialler interface

2.5

handbook, halfpage

I

P

(mA)

2

1.5

1

0.5

0

01234

MBE783

(1)(2)

VCC (V)

handbook, halfpage

V

R

CCO

CCintVCC

V

EE

TEA1112; TEA1112A

I

rec

PERIPHERAL

CIRCUIT

I

P

MBE792

(1) With RVA resistor.
(2) Without RVA resistor.

Fig.6 Typical current Ip available from VCC for

peripheral circuits at I

handbook, halfpage

LEQ=C
RP= internal resistance.
RP= 15.5kΩ.

REG

× R

V

LN

SLPE

EE

SLPE

× RP.

L

EQ

V

R
20 Ω

ref

SLPE

= 15 mA.

line

R

P

REG V

C

REG

4.7 µF

R

CC

619 Ω

CC

C

VCC

100 µF

MBE788

Fig.7 VCC supply voltage for peripherals.

100

handbook, halfpage

I

(mA)

80

60

40

20

0

0 100

I

SLPE

I

sh

I

LED

20 40 60 80

I

line

MBE784

(mA)

Fig.8 Equivalent impedance between LN and VEE.

1997 Mar 26 8

Fig.9 Available current to drive an LED.

Philips Semiconductors Product specification

Low voltage versatile telephone

TEA1112; TEA1112A

transmission circuits with dialler interface

MUTE and MMUTE levels for different modes
Table 1 Required MUTE and MMUTE levels to enable the different possible modes

IC TEA1112 TEA1112A

Mode MUTE MMUTE
Speech L L H H
DTMF dialling H X L X
Microphone mute L H H L

SIDETONE SUPPRESSION

The TEA1112; TEA1112A anti-sidetone network
comprising RCC // Z

line

, R

ast1

, R

ast2

, R

ast3

, R

SLPE

and Z
(see Fig.10) suppresses the transmitted signal in the
earpiece. Maximum compensation is obtained when the
following conditions are fulfilled:

be for an average line length which gives satisfactory
sidetone suppression with short and long lines.
The suppression also depends on the accuracy of the

bal

match between Z
line.

The anti-sidetone network for the TEA1112; TEA1112A
(as shown in Fig.14) attenuates the receiving signal from

× R

R

SLPERast1

CC

R

+()×=

ast2Rast3

the line by 32 dB before it enters the receiving amplifier.
The attenuation is almost constant over the whole audio

R

R

k

Z

ast2

=

----------------------------------------------------------------------­R

ast1RSLPE

kZ

bal

×=

line

The scale factor k is chosen to meet the compatibility with
a standard capacitor from the E6 or E12 range for Z

In practice, Z

line

the line length. Therefore, the value chosen for Z

+()×()

ast3RSLPE

×()

.

bal

varies considerably with the line type and

should

bal

frequency range. A Wheatstone bridge configuration (see
Fig.11) may also be used.

More information on the balancing of an anti-sidetone
bridge can be obtained in our publication

Handbook for Wired Telecom Systems, IC03b”

number 9397 750 00811.

MUTE MMUTE

and the impedance of the average

bal

“Applications

, order

handbook, full pagewidth

R

R

SLPE

CC

Z

line

V

EE

LN

SLPE

Fig.10 Equivalent circuit of TEA1112; TEA1112A family anti-sidetone bridge.

1997 Mar 26 9

R

ast1

I

m

R

ast3

IR

Z

R

ast2

Z

bal

ir

MBE787

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuits with dialler interface

handbook, full pagewidth

R

R

CC

SLPE

Z

line

V

EE

LN

SLPE

TEA1112; TEA1112A

Z

bal

ast1

IR

Z

ir

R

A

MBE786

I

m

R

Fig.11 Equivalent circuit of an anti-sidetone network in a Wheatstone bridge configuration.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

LN

positive continuous line voltage VEE− 0.4 12 V
repetitive line voltage during switch-on or

− 0.4 13.2 V

V

EE

line interruption

V

n(max)

I

line

maximum voltage on pins I

, SLPE VEE− 0.4 VLN+ 0.4 V

LED

maximum voltage on all other pins V
line current R

=20Ω; see

SLPE

− 0.4 VCC+ 0.4 V

EE

− 140 mA

Figs 12 and 13

P

tot

total power dissipation T

TEA1112; TEA1112A − 625 mW

=75°C;

amb

see Figs 12 and 13

TEA1112T; TEA1112AT − 416 mW

T

stg

T

amb

IC storage temperature −40 +125 °C
operating ambient temperature −25 +75 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-a

thermal resistance from junction to ambient in free air (TEA1112; TEA1112A) 80 K/W
thermal resistance from junction to ambient in free air mounted on epoxy board

130 K/W

40.1 × 19.1 × 1.5 mm (TEA1112T; TEA1112AT)

1997 Mar 26 10

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuits with dialler interface

150

handbook, halfpage

I

line

(mA)

110

70

30

246810

(3)(4)

(2)

VLN − V

MBE782

(1)

12

(V)

SLPE

TEA1112; TEA1112A

LINE T

(1) 45 1.000
(2) 55 0.875
(3) 65 0.750
(4) 75 0.625

(°C) P

amb

tot

(W)

150

handbook, halfpage

I

LN

(mA)

130

110

90

70

50

30

212

Fig.12 Safe operating area (TEA1112; TEA1112A).

MLC202

(1)
(2)
(3)

(4)

46810

V

LNVSLPE

(V)

LINE T

(°C) P

amb

tot

(1) 45 0.666
(2) 55 0.583
(3) 65 0.500
(4) 75 0.416

(W)

Fig.13 Safe operating area (TEA1112T; TEA1112AT).

1997 Mar 26 11

Philips Semiconductors Product specification

Low voltage versatile telephone

TEA1112; TEA1112A

transmission circuits with dialler interface

CHARACTERISTICS

= 15 mA; VEE=0V; R

I

line

unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply (pins V

V

ref

, VCC, SLPE and REG)

LN

stabilized voltage between LN and
SLPE

V

LN

V

LN(exR)

∆V

LN(T)

DC line voltage I

DC line voltage with an external
resistor R

VA

DC line voltage variation with

temperature referred to 25 °C
I
V
R

CC

CC

CCint

internal current consumption VCC= 2.9 V − 1.15 1.4 mA

supply voltage for peripherals Ip=0mA − 2.9 − V

equivalent supply voltage

impedance

=20Ω; AGC pin connected to VEE; Z

SLPE

=1mA − 1.6 − V

line

I

=4mA − 2.45 − V

line

I

= 15 mA 3.35 3.65 3.95 V

line

= 140 mA −−6.9 V

I

line

R

VA(SLPE−REG)

T

= −25 to +75 °C −±30 − mV

amb

Ip= 0.5 mA − 550 620 Ω

= 600 Ω; f = 1 kHz; T

line

amb

=25°C;

3.1 3.35 3.6 V

= 27 kΩ− 4.4 − V

LED supply (pin I

I

line(h)

I

line(l)

I

LED(max)

highest line current for I

lowest line current for maximum I

maximum supply current available − 19.5 − mA

LED

)

< 0.5 mA − 18 − mA

LED

LED

− 76 − mA

Microphone amplifier (pins MIC+, MIC− and GAS)
Z

 input impedance

i

differential between pins

− 64 − kΩ

MIC+ and MIC−

G
∆G

vtx

vtx(f)

single-ended between pins
MIC+/MIC− and V

EE

voltage gain from MIC+/MIC− to LN V

gain variation with frequency

= 2 mV (RMS) 50.6 51.8 53 dB

MIC

f = 300 to 3400 Hz −±0.2 − dB

− 32 − kΩ

referred to 1 kHz
∆G

vtx(T)

gain variation with temperature

T

= −25 to +75 °C −±0.3 − dB

amb

referred to 25 °C
CMRR common mode rejection ratio − 80 − dB
∆G

vtxr

gain voltage reduction range external resistor

−−13 dB
connected between
GAS and REG

V

LN(max)

V

notx

maximum sending signal
(RMS value)

noise output voltage at pin LN; pins
MIC+/ MIC− shorted through 200 Ω

I

= 15 mA; THD = 2% 1.4 1.7 − V

line

= 4 mA; THD = 10% − 0.8 − V

I

line

psophometrically weighted

−−70.5 − dBmp
(P53 curve)

1997 Mar 26 12

Philips Semiconductors Product specification

Low voltage versatile telephone

TEA1112; TEA1112A

transmission circuits with dialler interface

SYMBOL P ARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Microphone mute (pins MMUTE; TEA1112 and MMUTE; TEA1112A)

∆G

vtxm

gain reduction in microphone MUTE
mode

V

IL

V

IH

I

MMUTE

LOW level input voltage VEE− 0.4 − VEE+ 0.3 V
HIGH level input voltage VEE+ 1.5 − VCC+ 0.4 V
input current input level = HIGH − 1.25 3 µA

Receiving amplifier (pins IR, QR and GAR)

Zi input impedance − 20 − kΩ
G
∆G

vrx

vrx(f)

voltage gain from IR to QR VIR= 6 mV (RMS) 29.7 31.2 32.7 dB
gain variation with frequency

f = 300 to 3400 Hz −±0.2 − dB

referred to 1 kHz

∆G

vrx(T)

gain variation with temperature

T

= −25 to +75 °C −±0.3 − dB

amb

referred to 25 °C

∆G

vrxr

gain voltage reduction range external resistor

connected between
GAR and QR

V

o(rms)

maximum receiving signal (RMS
value)

Ip= 0 mA sine wave drive;
RL= 150 Ω; THD = 2%

I

= 0 mA sine wave drive;

p

RL= 450 Ω; THD = 2%

V

norx(rms)

noise output voltage at pin QR (RMS
value)

IR open-circuit;
RL= 150 Ω;
psophometrically weighted
(P53 curve)

− 80 − dB

−−12 dB

− 0.25 − V

− 0.35 − V

−−86 − dBVp

Automatic gain control (pin AGC)

∆G

vtrx

gain control range for microphone

I

=85mA − 5.8 − dB

line

and receiving amplifiers with

I

start

respect to I
highest line current for maximum gain − 26 − mA

=15mA

line

1997 Mar 26 13

Philips Semiconductors Product specification

Low voltage versatile telephone

TEA1112; TEA1112A

transmission circuits with dialler interface

SYMBOL P ARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

stop

DTMF amplifier (pin DTMF)

Zi input impedance − 20 − kΩ
G

vdtmf

∆G

vdtmf(f)

∆G

vdtmf(T)

G

vct

Mute function (pins MUTE; TEA1112 and

V

IL

V

IH

I

MUTE

∆G

trxm

lowest line current for minimum gain − 61 − mA

voltage gain from DTMF to LN in

V

= 20 mV (RMS) 24.3 25.5 26.7 dB

DTMF

DTMF dialling or microphone MUTE
mode

gain variation with frequency

f = 300 to 3400 Hz −±0.2 − dB

referred to 1 kHz
gain variation with temperature

T

= −25 to +75 °C −±0.4 − dB

amb

referred to 25 °C
voltage gain from DTMF to QR

(confidence tone)

V

= 20 mV (RMS);

DTMF

RL= 150 Ω

−−18 − dB

MUTE; TEA1112A)

LOW level input voltage VEE− 0.4 − VEE+ 0.3 V
HIGH level input voltage VEE+ 1.5 − VCC+ 0.4 V
input current input level = HIGH − 1.25 3 µA
gain reduction for microphone and

− 80 − dB

receiving amplifiers in DTMF dialling
mode

1997 Mar 26 14

Philips Semiconductors Product specification

a

Low voltage versatile telephone
transmission circuits with dialler interface

APPLICATION INFORMATION

pd5

R

470 kΩ

pd4

R

BC558

RCC619 Ω

signal

from

dial and

470 kΩ

supply for

control

circuits

pd6

R

circuits

peripheral

VCC

C

100 µF

PD

BC547

BF473

input

68 kΩ

TEA1112; TEA1112A

MGD177

pd3

R

1 MΩ

pd2

R

470 kΩ

QR

C

BAS11

CC

V

TEA1112

GAR

GAR

100 pF

ast2

R

3.92 kΩ

DTMF

MUTE

MMUTE

TEA1112A

MIC+

MIC−

1 nF

GARS

C

EE

V

GAS

C

SLPE GAS REG AGC

ast3

R

BZV85C10

390 Ω

REG

C

100 pF

SLPE

20 Ω

R

bal

Z

4.7 µF

pd1

R

470 kΩ

BZX79C18

BC547

limit

R

BSN254

3.9 Ω

LED

I

ndbook, full pagewidth

LN

IR

IR

C

ast1

R

130 kΩ

prot

10 Ω

R

4 x

Fig.14 Typical application of the TEA1112; TEA1112A in sets with Pulse Dialling or Flash facilities.

DR

95 V

V

a/b

line

Telephone

1997 Mar 26 15

b/a

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuits with dialler interface

PACKAGE OUTLINES

DIP16: plastic dual in-line package; 16 leads (300 mil)

D

seating plane

L

Z

16

e

b

TEA1112; TEA1112A

SOT38-4

M

E

A

2

A

A

1

w M

b

1

b

2

9

c

(e )

1

M

H

pin 1 index

1

0 5 10 mm

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A

A

A

UNIT

max.

mm

inches

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

OUTLINE

VERSION

SOT38-4

12

min.

max.

IEC JEDEC EIAJ

b

1.73

1.30

0.068

0.051

b

1

0.53

0.38

0.021

0.015

b

cD E e M

2

0.36

1.25

0.23

0.85

0.014

0.049

0.009

0.033

REFERENCES

8

scale

(1) (1)

19.50

18.55

0.77

0.73

6.48

6.20

0.26

0.24

E

(1)

Z

L

e

1

M

3.60

8.25

3.05

7.80

0.14

0.32

0.12

0.31

EUROPEAN

PROJECTION

E

10.0

0.39

0.33

H

8.3

w

max.

0.2542.54 7.62

0.010.10 0.30

0.0300.17 0.020 0.13

ISSUE DATE

92-11-17
95-01-14

0.764.2 0.51 3.2

1997 Mar 26 16

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuits with dialler interface

SO16: plastic small outline package; 16 leads; body width 3.9 mm

D

c

y

Z

16

9

TEA1112; TEA1112A

SOT109-1

E

H

E

A

X

v M

A

pin 1 index

1

e

0 2.5 5 mm

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

A

max.

1.75

0.069

A1A2A

0.25

1.45

0.10

1.25

0.010

0.057

0.004

0.049

0.25

0.01

b

3

p

0.49

0.25

0.36

0.19

0.0100

0.019

0.0075

0.014

UNIT

inches

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

(1)E(1) (1)

cD

10.0

9.8

0.39

0.38

8

b

p

scale

eHELLpQZywv θ

4.0

1.27

3.8

0.16

0.050

0.15

w M

6.2

5.8

0.244

0.228

A

2

1.05

0.041

Q

A

1

detail X

1.0

0.7

0.4

0.6

0.028

0.039

0.020

0.016

(A )

L

p

L

0.25 0.1

0.25

0.01

0.01 0.004

A

3

θ

0.7

0.3

0.028

0.012

o

8

o

0

OUTLINE
VERSION

SOT109-1

IEC JEDEC EIAJ

076E07S MS-012AC

REFERENCES

1997 Mar 26 17

EUROPEAN

PROJECTION

ISSUE DATE

95-01-23
97-05-22

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuits with dialler interface

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in

“IC Package Databook”

our

DIP

SOLDERING BY DIPPING OR BY WA VE
The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

R

EPAIRING SOLDERED JOINTS

Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.

SO

REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO

packages.

(order code 9398 652 90011).

). If the

stg max

TEA1112; TEA1112A

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

AVE SOLDERING

W
Wave soldering techniques can be used for all SO

packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be
parallel to the solder flow.

• The package footprint must incorporate solder thieves at
the downstream end.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

EPAIRING SOLDERED JOINTS

R
Fix the component by first soldering two diagonally-

opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

1997 Mar 26 18

Philips Semiconductors Product specification

Low voltage versatile telephone

TEA1112; TEA1112A

transmission circuits with dialler interface

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Mar 26 19

Philips Semiconductors – a worldwide company

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: seeSouth America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]/xxx
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,

Tel. [phone], Fax. [phone]

Hungary: seeAustria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.

Worli, MUMBAI 400 018, Tel. [phone], Fax. [phone]

Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. [phone], Fax. [phone]
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180,

Tel. [phone], Fax. [phone]
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. [phone], Fax. [phone]
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. [phone], Fax. [phone]
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. [phone], Fax. [phone]
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. [phone], Fax. [phone]
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600PB EINDHOVEN, Bldg.VB,

Tel. [phone], Fax.[phone]
New Zealand: 2 WagenerPlace, C.P.O. Box1041, AUCKLAND,

Tel. [phone], Fax.[phone]
Norway: Box 1, Manglerud0612, OSLO,

Tel. [phone], Fax.[phone]
Philippines: Philips Semiconductors Philippines Inc.,

106 ValeroSt. SalcedoVillage, P.O. Box2108 MCC,MAKATI,
Metro MANILA, Tel.[phone],Fax. [phone]

Poland: Ul. Lukiska10, PL 04-123WARSZAWA,
Tel. [phone], Fax.[phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva35A, 119048 MOSCOW,

Tel. [phone], Fax.[phone]
Singapore: Lorong 1, ToaPayoh, SINGAPORE 1231,

Tel. [phone],Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 MainRoad Martindale,

2092 JOHANNESBURG, P.O.Box 7430 Johannesburg2000,
Tel. [phone], Fax.[phone]

South America: Rua doRocio 220, 5thfloor, Suite 51,
04552-903 SãoPaulo, SÃO PAULO- SP, Brazil,
Tel. [phone], Fax.[phone]

Spain: Balmes 22, 08007BARCELONA,
Tel. [phone], Fax.[phone]

Sweden: Kottbygatan 7, Akalla, S-16485STOCKHOLM,
Tel. [phone], Fax.[phone]

Switzerland: Allmendstrasse 140, CH-8027ZÜRICH,
Tel. [phone], Fax.[phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1997 SCA53
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 417027/1200/03/pp20 Date of release: 1997 Mar 26 Document order number: 9397 750 01888