Page 1
®
HIGH VOLTAGE ULTRAFAST RECTIFIER
MAIN PRODUCT CHARACTERISTICS
STTH112/A/U
I
F(AV)
V
RRM
1A
1200 V
Tj (max) 175 °C
(max) 1.65 V
V
F
FEATURES AND BENEFITS
Low forward voltage drop
■
High reliability
■
■ High surge current capability
■ Soft switching for reducedEMI disturbances
■ Planar technology
DO-41
STTH112
DESCRIPTION
The STTH112, which is using ST ultrafast high
voltage planar technology, is specially suited for
free-wheeling, clamping, snubbering, demagnetizationinpowersuppliesandother power switching
SMA
STTH112A
SMB
STTH112U
applications.
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
V
(RMS)
I
F(AV)
RRM
Repetitive peak reverse voltage 1200 V
RMS voltage 850 V
Average forward current Tl = 85°C δ =0.5 DO-41 1 A
Tl = 115°C δ =0.5 SMA
Tl = 125°C δ =0.5 SMB
I
FSM
Forward surge current t = 8.3 ms DO-41 20 A
SMA 18
SMB
T
stg
Storage temperature range - 50 + 175 °C
Tj Maximum operating junction temperature + 175 °C
January 2003 - Ed: 2
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Page 2
STTH112/A/U
THERMAL PARAMETERS
Symbol Parameter Value Unit
R
th (j-l)
Junction to lead L = 10 mm DO-41 45 °C/W
SMA 30
SMB 25
R
th (j-a)
Junction to ambient L = 10 mm DO-41 110
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
Reverse leakage current VR= 1200V Tj = 25°C 5 µA
Tj = 125°C 50
V
Forward voltage drop IF= 1 A Tj = 25°C 1.9 V
F
Tj = 125°C 1.17 1.65
To evaluate the maximum conduction losses use the following equation :
P=1.35xI
F(AV)
+0.3xI
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
t
rr
Reverse recovery time IF= 0.5 A
Irr = 0.25 A IR=1A
t
fr
V
FP
Forward recovery time IF=1A
Forward recovery voltage 30 V
dIF/dt = 50 A/µs
VFR=1.1xVFmax
Fig.1: Conduction losses versusaverage current.
P(W)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
δ = 0.05
δ = 0.1
I (A)
F(AV)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Tj = 25°C 75 ns
Tj = 25°C 500 ns
Fig. 2: Forward voltage drop versus forward
current.
I (A)
FM
100.0
T=125°C
j
(maximum values)
T=125°C
10.0
1.0
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
j
(typical values)
V (V)
FM
T=25°C
j
(maximum values)
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Page 3
STTH112/A/U
Fig. 3-1: Relative variation of thermal impedance
junction ambient versus pulse duration (epoxy
FR4, L
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
0.3
δ = 0.2
0.2
δ = 0.1
0.1
Single pulse
0.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
= 10mm) (DO-41).
leads
t (s)
p
δ
=tp/T
T
tp
Fig. 3-3: Relative variation of thermal impedance
junction ambient versus pulse duration (epoxy
FR4)(SMB).
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
0.3
δ = 0.2
0.2
δ = 0.1
0.1
Single pulse
0.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Fig. 3-2: Relative variation of thermal impedance
junction ambient versus pulse duration (epoxy
FR4) (SMA).
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
0.3
δ = 0.2
0.2
δ = 0.1
0.1
Single pulse
0.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
T
t (s)
p
δ
=tp/T
t (s)
p
tp
δ
=tp/T
T
tp
Fig. 4-1: Thermal resistance junction to ambient
versus copper surface under each lead (epoxy
printedcircuit board FR4, copper thickness: 35µm)
(DO-41, SMB).
R (°C/W)
th(j-a)
110
100
90
80
70
60
50
40
30
20
10
0
012345678910
SMB
S(cm²)
DO-41
L =10mm
leads
Fig. 4-2: Thermal resistance junction to ambient
versus copper surface under each lead (epoxy
printedcircuit board FR4, copper thickness: 35µm)
(SMA).
R (°C/W)
th(j-a)
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
SMA
S(cm²)
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STTH112/A/U
PACKAGE MECHANICAL DATA
SMA
DIMENSIONS
E1
E
C
L
FOOTPRINT (in millimeters)
REF.
Millimeters Inches
Min. Max. Min. Max.
D
A1 1.90 2.70 0.075 0.106
A2 0.05 0.20 0.002 0.008
b 1.25 1.65 0.049 0.065
c 0.15 0.41 0.006 0.016
A1
A2
b
E 4.80 5.60 0.189 0.220
E1 3.95 4.60 0.156 0.181
D 2.25 2.95 0.089 0.116
L 0.75 1.60 0.030 0.063
1.65
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1.45 1.45
2.40
Page 5
PACKAGE MECHANICAL DATA
SMB
STTH112/A/U
DIMENSIONS
E1
E
C
L
FOOTPRINT (in millimeters)
REF.
Millimeters Inches
Min. Max. Min. Max.
D
A1 1.90 2.45 0.075 0.096
A2 0.05 0.20 0.002 0.008
b 1.95 2.20 0.077 0.087
c 0.15 0.41 0.006 0.016
A1
A2
b
E 5.10 5.60 0.201 0.220
E1 4.05 4.60 0.159 0.181
D 3.30 3.95 0.130 0.156
L 0.75 1.60 0.030 0.063
2.3
1.52 2.75
1.52
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STTH112/A/U
PACKAGE MECHANICAL DATA
DO-41
DIMENSIONS
CA
C
/
BO
REF.
Millimeters Inches
Min. Max. Min. Max.
A 4.07 5.20 0.160 0.205
B 2.04 2.71 0.080 0.107
O
/
O
/
D
D
C 28 1.102
D 0.712 0.863 0.028 0.034
Ordering code Marking Package Weight Base qty Delivery mode
STTH112 STTH112 DO-41 0.34 g 2000 Ammopack
STTH112A H12 SMA 0.068 g 5000 Tape& reel
STTH112U U12 SMB 0.11 g 2500 Tape & reel
STTH112RL STTH112 DO-41 0.34 g 5000 Tape & reel
■ Epoxy meets UL 94,V0
Informationfurnishedisbelievedtobeaccurateandreliable.However,STMicroelectronicsassumesnoresponsibilityfortheconsequencesof
useofsuchinformation nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
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