Datasheet STTH110A, STTH110 Datasheet (SGS Thomson Microelectronics)

Page 1
®
HIGH VOLTAGE ULTRAFAST RECTIFIER
MAIN PRODUCT CHARACTERISTICS
STTH110/A
I
F(AV)
V
RRM
1A
1000 V
Tj (max) 175 °C
(max) 1.42 V
V
F
FEATURES AND BENEFITS
Low forward voltage drop
High reliability
High surge current capability
Soft switching for reducedEMI disturbances
Planar technology
DO-41
STTH110
DESCRIPTION
The STTH110, which is using ST ultrafast high voltage planar technology, is specially suited for free-wheeling, clamping, snubbering, demagneti­zationinpowersuppliesandother power switching
SMA
STTH110A
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
V
(RMS)
I
F(AV)
RRM
Repetitive peak reverse voltage 1000 V RMS voltage 700 V Average forward current Tl = 100°C δ =0.5 DO-41 1 A
Tl = 125°C δ =0.5 SMA 1
I
FSM
Forward surge current t = 8.3 ms DO-41 20 A
SMA 18
T
stg
Storage temperature range - 50 + 175 °C
Tj Maximum operating junction temperature + 175 °C
January 2003 - Ed: 1
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STTH110/A
THERMAL PARAMETERS
Symbol Parameter Value Unit
R
th (j-l)
Junction to lead L = 10 mm DO-41 45 °C/W
SMA 30
R
th (j-a)
Junction to ambient L = 10 mm DO-41 110
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
Reverse leakage current VR= 1000V Tj = 25°C 10 µA
Tj = 125°C 50
V
Forward voltage drop IF= 1 A Tj = 25°C 1.7 V
F
Tj = 150°C 0.98 1.42
To evaluate the maximum conduction losses use the following equation : P=1.20xI
F(AV)
+ 0.225 x I
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
t
rr
Reverse recovery time IF= 0.5 A
Tj = 25°C 75 ns
Irr = 0.25 A IR=1A
t
fr
V
FP
Forward recovery time IF=1A Forward recovery voltage 18 V
dIF/dt = 50 A/µs VFR=1.1xVFmax
Tj = 25°C 300 ns
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STTH110/A
Fig.1: Conduction losses versusaverage current.
P(W)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
δ = 0.05
δ = 0.1
I (A)
F(AV)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 3-1: Relative variation of thermal impedance junction ambient versus pulse duration (epoxy FR4, L
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
0.3
δ = 0.2
0.2
δ = 0.1
0.1
Single pulse
0.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
= 10mm) (DO-41).
leads
t (s)
p
δ
=tp/T
T
tp
Fig. 2: Forward voltage drop versus forward current.
I (A)
FM
100.0
T=150°C
j
(maximum values)
10.0
1.0
0.1
T=150°C
j
(typical values)
T=25°C
j
(maximum values)
V (V)
FM
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Fig. 3-2: Relative variation of thermal impedance junction ambient versus pulse duration (epoxy FR4) (SMA).
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
δ = 0.2
0.3
δ = 0.1
0.2
0.1
Single pulse
0.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
t (s)
p
δ
=tp/T
T
tp
Fig. 4-1: Thermal resistance junction to ambient versus copper surface under each lead (epoxy printedcircuit board FR4, copper thickness: 35µm) (DO-41).
R (°C/W)
th(j-a)
120 110 100
90 80 70 60 50 40 30 20 10
0
012345678910
S(cm²)
Fig. 4-2: Thermal resistance junction to ambient
versus copper surface under each lead (epoxy printedcircuit board FR4, copper thickness: 35µm) (SMA).
R (°C/W)
th(j-a)
140 130 120 110 100
90 80 70 60 50 40 30 20 10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
S(cm²)
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STTH110/A
PACKAGE MECHANICAL DATA
SMA
DIMENSIONS
E1
E
C
L
FOOTPRINT (in millimeters)
REF.
Millimeters Inches
Min. Max. Min. Max.
D
A1 1.90 2.70 0.075 0.106 A2 0.05 0.20 0.002 0.008
b 1.25 1.65 0.049 0.065
c 0.15 0.41 0.006 0.016
A1
A2
b
E 4.80 5.60 0.189 0.220
E1 3.95 4.60 0.156 0.181
D 2.25 2.95 0.089 0.116
L 0.75 1.60 0.030 0.063
1.65
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1.45 1.45
2.40
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PACKAGE MECHANICAL DATA
DO-41
STTH110/A
DIMENSIONS
CA
C
/
BO
REF.
Millimeters Inches
Min. Max. Min. Max.
A 4.07 5.20 0.160 0.205 B 2.04 2.71 0.080 0.107
O
/
O
/
D
D
C 28 1.102 D 0.712 0.863 0.028 0.034
Ordering code Marking Package Weight Base qty Delivery mode
STTH110 STTH110 DO-41 0.34 g 2000 Ammopack
STTH110A H10 SMA 0.068 g 5000 Tape & reel
STTH110RL STTH110 DO-41 0.34 g 5000 Tape & reel
Epoxy meets UL 94,V0
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