The STTH110, which is using ST ultrafast high
voltage planar technology, is specially suited for
free-wheeling, clamping, snubbering, demagnetizationinpowersuppliesandother power switching
Fig. 3-1: Relative variation of thermal impedance
junction ambient versus pulse duration (epoxy
FR4, L
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
0.3
δ = 0.2
0.2
δ = 0.1
0.1
Single pulse
0.0
1.E-011.E+001.E+011.E+021.E+03
= 10mm) (DO-41).
leads
t (s)
p
δ
=tp/T
T
tp
Fig. 2: Forward voltage drop versus forward
current.
I (A)
FM
100.0
T=150°C
j
(maximum values)
10.0
1.0
0.1
T=150°C
j
(typical values)
T=25°C
j
(maximum values)
V (V)
FM
0.00.51.01.52.02.53.03.54.04.5
Fig. 3-2: Relative variation of thermal impedance
junction ambient versus pulse duration (epoxy
FR4) (SMA).
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
δ = 0.2
0.3
δ = 0.1
0.2
0.1
Single pulse
0.0
1.E-011.E+001.E+011.E+021.E+03
t (s)
p
δ
=tp/T
T
tp
Fig. 4-1: Thermal resistance junction to ambient
versus copper surface under each lead (epoxy
printedcircuit board FR4, copper thickness: 35µm)
(DO-41).
R(°C/W)
th(j-a)
120
110
100
90
80
70
60
50
40
30
20
10
0
012345678910
S(cm²)
Fig. 4-2: Thermal resistance junction to ambient
versus copper surface under each lead (epoxy
printedcircuit board FR4, copper thickness: 35µm)
(SMA).
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