The STTH106, which is using ST Turbo 2 600V
technology, is specially suited for use in switching
power supplies, inverters and as a free wheeling
diode.
DO-41
STTH106
ABSOLUTE RATINGS (limiting values)
SymbolParameterValueUnit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
Repetitive peak reverse voltage600V
RMS forward current6A
Average forward currentTl = 100°Cδ =0.51A
Surge non repetitive forwardcurrenttp = 10 msSinusoidal25A
Storage temperature range- 65 + 175°C
TjMaximum operatingjunction temperature+ 175°C
November 2001 - Ed: 2A
1/5
Page 2
STTH106
THERMAL PARAMETERS
SymbolParameterMaximumUnit
R
R
th (j-l)
th (j-a)
Junction to lead45°C/W
Junction to ambient110
STATIC ELECTRICAL CHARACTERISTICS
SymbolParameterTests conditionsMin.Typ.Max.Unit
I
R
V
Reverse leakage
current
Forward voltage dropIF= 1 ATj = 25°C1.7V
F
VR= 600VTj = 25°C1µA
Tj = 150°C1075
Tj = 150°C1.01.25
To evaluate the maximumconduction losses use the following equation :
P=1.03xI
F(AV)
+ 0.27 I
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
SymbolTests conditionsMin.Typ.Max.Unit
trrI
tfrI
V
FP
= 0.5 A Irr = 0.25 A IR= 1ATj = 25°C25ns
F
I
=1A dIF/dt=-50A/µs
F
3045
VR= 30V
=1AdIF/dt = 100 A/µs
F
VFR=1.1xVFmax
Tj = 25°C100ns
10V
2/5
Page 3
STTH106
Fig.1: Conductionlossesversusaveragecurrent.
P(W)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.00.20.40.60.81.01.2
δ = 0.05
δ = 0.1
IF(av)(A)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 3: Relative variation of thermal impedance
junction ambient versus pulse duration (epoxy
FR4, Leads = 10mm)
Zth(j-a)/Rth(j-a)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
0.3
δ = 0.2
0.2
δ = 0.1
0.1
0.0
1.E-011.E+001.E+011.E+021.E+03
Single pulse
tp(s)
δ
=tp/T
T
tp
Fig. 2: Forward voltage drop versus forward
current.
IFM(A)
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
012345
(Maximum values)
(Maximum values)
Tj=150°C
Tj=150°C
(Typical values)
(Typical values)
Tj=150°C
Tj=150°C
VFM(V)
Tj=25°C
(Maximum values)
Fig. 4:Peak reverse recovery current versus
/dt (90% confidence).
dI
F
IRM(A)
9
VR=400V
Tj=125°C
8
7
6
5
4
IF=0.25 x IF(av)
3
2
1
0
050100150200250300350400450500
IF=0.5 x IF(av)IF=0.5 x IF(av)
IF=IF(av)
dIF/dt(A/µs)
IF=2 x IF(av)IF=2 x IF(av)
Fig. 5:Reverse recovery time versus dIF/dt
(90% confidence).
trr(ns)
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
050100150200250300350400450500
IF=2 x IF(av)
IF=IF(av)
IF=0.5 x IF(av)IF=0.5 x IF(av)
dIF/dt(A/µs)
VR=400V
Tj=125°C
Fig. 6: Reverse recovery charges versus dIF/dt
(90% confidence).
Qrr(nC)
250
VR=400V
225
Tj=125°C
200
175
150
125
100
75
50
25
0
050100150200250300350400450500
IF=2 x IF(av)
IF=IF(av)
IF=0.5 x IF(av)
dIF/dt(A/µs)
3/5
Page 4
STTH106
Fig. 7:Softness factor versus dIF/dt (typical
values).
S factor
6
IF=IF(av)
VR=400V
Tj=125°C
5
4
3
2
1
dIF/dt(A/µs)
0
050100150200250300350400450500
Fig. 9: Transient peak forward voltage versus
/dt (90% confidence).
dI
F
VFp(V)
25
IF=IF(av)
Tj=125°C
20
15
10
5
dIF/dt(A/µs)
0
020406080100120140160180200
Fig.8:Relativevariationofdynamic
parameters versus junction temperature.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
255075100125
S factor
IRM
Qrr
Tj(°C)
IF=IF(av)
VR=400V
Reference: Tj=125°C
Fig. 10:Forward recovery time versus dIF/dt
(90% confidence).
trr(ns)
200
180
160
140
120
100
80
60
40
20
0
020406080100120140160180200
dIF/dt(A/µs)
IF=IF(av)
VFR=1.1 x VF max.
Tj=125°C
Fig. 11:Junction capacitance versus reverse
voltage applied (typical values).
Informationfurnishedisbelievedto be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
useof such information nor for any infringement of patents or other rightsofthird parties which may result from its use. No license is grantedby
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics