Datasheet STH8NB90FI Datasheet (SGS Thomson Microelectronics)

STW8NB90

STH8NB90FI

N-CHANNEL 900V - 1.1 Ω - 8 A TO-24 7/ISO WATT218

PowerMesh™ MOSFET

TYPE V

DSS

R

DS(on)

I

D

STW8NB90 900 V < 1.45 Ω 8 A
STH8NB90FI 900 V < 1.45 Ω 5 A

■ TYPICAL R

■ EXTREMELY HIGH dv /d t CAPABILITY

■ 100% AVALANCHE TESTED

■ VERY LOW INTRINSIC CAPAC ITANCES

■ GATE CHARGE MINIMIZED

(on) = 1.1 Ω

DS

DESCRIPTION

Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad­vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi­nation structure, gives the lowest R

DS(on)

per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris­tics.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITH MODE POWER SUPPLI ES ( SMPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENT

3

2

1

TO-247 ISOWATT218

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STW8NB90 STH8NB90FI

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

dv/dt (1) Peak Diode Recovery voltage slope 4 V/ns

V

ISO

T

stg

T

j

(•)Pu l se width limi te d by safe oper ating area

≤8 A, di/dt ≤200A/µs, VDD ≤ V

(1)I

SD

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

900 V
900 V

Gate- source Voltage ±30 V

Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C

(●)

Drain Current (pulsed) 32 20 A
Total Dissipation at TC = 25°C

85A
53A

200 80 W

Derating Factor 1.6 0.64 W/°C

Insulation Withstand Voltage (DC) - 2500 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

, Tj ≤ T

(BR)DSS

JMAX.

1/9July 2001

STW8NB90 - STH8NB90FI

THERMA L D ATA

TO-247 ISOWATT218

Rthj-case Thermal Resistance Junction-case Max 0.625 1.56 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W

T

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

Maximum Lead Temperature For Soldering Purpose 300 °C

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

Drain-source

= 25 °C, ID = IAR, VDD = 50 V)

j

ID = 250 µA, VGS = 0 900 V

8A

700 mJ

Breakdown Voltage
Zero Gate Voltage

Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

V

= Max Rating

DS

V

= Max Rating, TC = 125 °C

DS

V

= ±30V ±100 nA

GS

1µA

50 µA

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

= VGS, ID = 250 µA

DS

VGS = 10 V, ID = 4 A

345V

1.1 1.45 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS > I

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 225 pF
Reverse Transfer

Capacitance

ID=4 A

V

DS

D(on)

x R

DS(on)max,

= 25V, f = 1 MHz, VGS = 0

8S

2120 pF

23 pF

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STW8NB90 - STH8NB90FI

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time 12 ns
Total Gate Charge

Gate-Source Charge 12.5 nC
Gate-Drain Charge 18 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

t

f

c

Off-voltage Rise Time
Fall Time 15 ns
Cross-over Time 31 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1.5 %.

2. Pulse width li mited by safe operating area.

Source-drain Current 8 A

(2)

Source-drain Current (pulsed) 32 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge 6.3 µC
Reverse Recovery Current 18 A

= 450 V, ID = 3.5 A

DD

RG= 4.7Ω VGS = 10 V
(see test circuit, Figure 3)

V

= 400V, ID = 9A,

DD

VGS = 10V

V

= 720V, ID = 7.4 A,

DD

RG=4.7Ω, V

GS

= 10V

(see test circuit, Figure 5)

ISD = 8 A, VGS = 0
I

= 7.4 A, di/dt = 100A/µs,

SD

VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)

25 ns

46 72 nC

22 ns

1.6 V

700 ns

Safe Operating Area for ISOWATT 218Safe Operating Area for TO-247

3/9

STW8NB90 - STH8NB90FI

Thermal Impedence for TO-247 Thermal Impedence for ISOWATT218

Output Characteristics

Transfer Characteristics

Static Drain-source On ResistanceTransconductanc e

4/9

STW8NB90 - STH8NB90FI

Capacitance VariationsGate Charge vs Gate-source Voltage

Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

5/9

STW8NB90 - STH8NB90FI

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/9

TO-247 MECHANICAL DATA

STW8NB90 - STH8NB90FI

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031

F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134

G 10.9 0.429

H 15.3 15.9 0.602 0.626

L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.582
L4 34.6 1.362
L5 5.5 0.217

M 2 3 0.079 0.118

mm inch

P025P

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STW8NB90 - STH8NB90FI

ISOWATT218 MECHANICAL DATA

DIM.

A 5.35 5.65 0.211 0.222

C 3.30 3.80 0.130 0.150

D 2.90 3.10 0.114 0.122
D1 1.88 2.08 0.074 0.082

E 0.75 0.95 0.030 0.037

F 1.05 1.25 0.041 0.049
F2 1.50 1.70 0.059 0.067
F3 1.90 2.10 0.075 0.083

G 10.80 11.20 0.425 0.441

H 15.80 16.20 0.622 0.638

L 9 0.354
L1 20.80 21.20 0.819 0.835
L2 19.10 19.90 0.752 0.783
L3 22.80 23.60 0.898 0.929
L4 40.50 42.50 1.594 1.673
L5 4.85 5.25 0.191 0.207
L6 20.25 20.75 0.797 0.817

N 2.1 2.3 0.083 0.091

R 4.6 0.181

DIA 3.5 3.7 0.138 0.146

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

8/9

- Weight : 4.9 g (typ.)

- Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm

- The side of the dissipator must be flat within 80 µm

P025C/A

STW8NB90 - STH8NB90FI

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subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
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