Datasheet STGP7NC60HD, STGF7NC60HD, STGB7NC60HD Datasheet (ST)

Page 1
查询STGB7NC60HD供应商
N-CHANNEL 14A - 600V - TO-220/TO-220FP/D²PAK
STGP7NC60HD
STGF7NC60HD - STGB7NC60HD
Very Fast PowerMESH™ IGBT
Table 1: Ge neral Features
TYPE V
STGP7NC60HD STGF7NC60HD STGB7NC60HD
■ LOWER ON-VOLTAGE DROP (V
■ OFF LOSSES INCLUDE TAIL CURRENT
■ LOSSES INCLUDE DIODE RECOVERY
CESVCE(sat)
600 V 600 V 600 V
(Max)
@25°C < 2.5 V
< 2.5 V < 2.5 V
cesat
I
C
@100°C
14 A 6 A 14 A
ENERGY
■ LOWER C
■ HIGH FREQUENCY OPERATION UP TO 70
RES/CIES
RATIO
KHz
■ VERY SOFT ULTRA FAST RECOVERY ANTI
PARALLEL DIODE
■ NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRIBUTION
DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Pow­erMESH
™
IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) man­taining a low voltage drop.
Figure 1: Package
3
2
1
TO-220
3
1
TO-220FP
D2PAK
Figure 2: Internal Schematic Diagram
3
2
1
APPLICATIONS
■ HIGH FREQUENCY INVERTERS
■ SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
■ MOTOR DRIVERS
Table 2: Order Code
PART NUMBER MARKING PACKAGE PACKAGING
STGP7NC60HD GP7NC60HD TO-220 TUBE STGF7NC60HD GF7NC60HD TO-220FP TUBE
STGB7NC60HDT4
GB7NC60HD
2
D
PAK
TAPE & REEL
Rev.9
1/15June 2005
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STGP7NC60HD - STGF7N C60HD - STGB7NC60HD
Table 3: Absolute Maxim u m ra t in gs
Symbol Parameter Value Unit
STGP7NC60HD STGB7NC60HD
Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage 20 V Gate-Emitter Voltage ±20 V
GE
Collector Current (continuous) at TC = 25°C (#)
C
Collector Current (continuous) at TC = 100°C (#)
C
()
Collector Current (pulsed) 50 A
I
Diode RMS Forward Current at TC = 25°C
F
Total Dissipation at TC = 25°C
25 10 A 14 6 A
80 25 W
I
V V
V
CM
P
CES ECR
I I
TOT
Derating Factor 0.64 0.20 W/°C
V
T
Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C) -- 2500 V
ISO
Storage Temperature
stg
T
Operating Junction Temperature
j
– 55 to 150 °C
() Pulse wid th limited by max . ju nct i on temperature.
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case TO-220
D²PAK
TO-220FP 5.0 °C/W
Rthj-amb Thermal Resistance Junction-ambient 62.5 °C/W
T
L
Maximum Lead T emperature for Soldering Purpose (1.6 mm from case, for 10 sec.)
STGF7NC60HD
600 V
20 A
Min. Typ. Max.
1.56 °C/W
300 °C
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTH ERWI SE SPEC IFIED)
CASE
Table 5: Main Parameters
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-Emitter Breakdown Voltage
I
CES
I
GES
V
GE(th)
V
CE(sat)
Collector cut-off Current
= 0)
(V
GE
Gate-Emitter Leakage Current (V
CE
= 0) Gate Threshold Voltage Collector-Emitter Saturation
Voltage
(#) Calculated according to the iterative formu l a:
T
–
ICTC()
--------------------------------------------------------------------------------------------------
=
R
THJ C–
JMAXTC
V
CESAT MAX()TCIC
2/15
,()×
IC = 1 mA, VGE = 0 600 V
V
= Max Rating, TC = 25 °C
CE
VCE = Max Rating, TC = 125 °C V
= ± 20V , VCE = 0 ±100 nA
GE
V
= VGE, IC = 250 µA
CE
VGE = 15V, IC = 7 A V
= 15V, IC = 7 A, Tc= 125°C
GE
3.75 5.75 V
1.85
1.7
10
1
mA
2.5 V
µA
V
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STGP7NC60HD - STGF7N C60HD - STGB7NC60HD
ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1)
g
fs
C
ies
C
oes
C
res
Forward Transconductance Input Capacitance Output Capacitance 81 pF Reverse Transfer
Capacitance
Q
g
Q
ge
Q
gc
I
CL
Total Gate Charge Gate-Emitter Charge Gate-Collector Charge
Turn-Off SOA Minimum Current
(1) Pulsed: Pulse durati on= 300 µs, dut y c yc l e 1.5%
Table 7: Switching On
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
(di/dt)
t
d(on)
t
(di/dt)
r
r
Turn-on Delay Time Current Rise Time Turn-on Current Slope
on
Turn-on Delay Time Current Rise Time Turn-on Current Slope
on
VCE = 15 V , IC= 7 A 4.30 S V
= 25 V, f= 1 MHz, VGE = 0
CE
720 pF
17 pF
= 390 V, IC = 7 A,
V
CE
VGE = 15 V (see Figure 22)
V
= 480 V , Tj = 150°C
clamp
R
= 10 Ω, VGE = 15 V
G
VCC = 390 V, IC = 7 A R
=10 Ω, VGE= 15V, Tj= 25°C
G
(see Figure 19) VCC = 390 V, IC = 7 A
RG=10 Ω, VGE= 15V , Tj= 125°C (see Figure 20)
50 A
35
7
16
18.5
8.5
1060
18.5 7
1000
48 nC
nC nC
ns ns
A/µs
ns ns
A/µs
Table 8: Switching Off
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff
t
d(off
t
r(Voff
t
d(off
)
Off Voltage Rise Time
)
Turn-off Delay Time 72 ns
t
f
t
f
Current Fall Time 60 ns
)
Off Voltage Rise Time
)
Turn-off Delay Time 116 ns Current Fall Time 105 ns
Vcc = 390 V, IC = 7 A, R
= 10 Ω , VGE = 15 V
G
TJ = 25 °C (see Figure 20)
Vcc = 390 V, IC = 7 A, R
= 10 Ω , VGE = 15 V
G
Tj = 125 °C (see Figure 20)
27 ns
56 ns
Table 9: Switching Energy
Symbol Parameter Test Conditions Min. Typ. Max Unit Eon (2)
E
off
E
ts
Eon (2)
E
off
E
ts
(2) Eon i s t he tur n-on l oss es wh en a typ ica l diod e is used in th e tes t cir cui t in fig ure 2. I f the IGB T is o ffere d in a pac kage w it h a co- pa ck diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C) (3) Turn-off losses in clude also the tail of the collector current.
Turn-on Switching Losses Turn-off Switching Loss
(3)
Total Switching Loss Turn-on Switching Losses
Turn-off Switching Loss
(3)
Total Switching Loss
= 390 V, IC = 7 A
V
CC
R
= 10 Ω, VGE= 15V, Tj= 25°C
G
(see Figure 19)
= 390 V, IC = 7 A
V
CC
RG= 10 Ω, VGE= 15V, Tj= 125°C (see Figure 20)
95
115
210 140
215 355
125 150 275
µJ µJ µJ
µJ µJ µJ
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STGP7NC60HD - STGF7N C60HD - STGB7NC60HD
Table 10: Collector-Emitter Diode
Symbol Parameter Test Condiction Min. Typ. Max. Unit
Q
I
Q
I
V
t
rr
t
a
rrm
S
t
rr
t
a
rrm
S
Forward On-Voltage If = 3.5 A
f
If = 3.5 A, Tj = 125 °C
Reverse Recovery Time
rr
Reverse Recovery Charge
If = 7 A, V
= 25 °C, di/dt = 100 A/µs
T
j
= 40 V,
R
Reverse Recovery Current Softness factor of the diode
Reverse Recovery Time
rr
Reverse Recovery Charge
If = 7 A, V
= 125 °C, di/dt = 100 A/µs
T
j
= 40 V,
R
Reverse Recovery Current Softness factor of the diode
1.3
1.1 37
22 40
2.1
0.68 61
34 98
3.2
0.79
1.9
V V
ns ns
nC
A
ns ns
nC
A
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STGP7NC60HD - STGF7N C60HD - STGB7NC60HD
Figure 3: Output Characteristics
Figure 4: Transconductance
Figure 6: Transfer Characteristics
Figure 7: Collector-Emitter On Voltage vs Tem­perature
Figure 5: Collector-Emitter On Voltage vs Col­lector Curr e nt
Figure 8: Normalized Gate Threshold vs Tem­perature
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STGP7NC60HD - STGF7N C60HD - STGB7NC60HD
Figure 9: Normalized Breakdown Voltage vs Temperature
Figure 10: Capacitance Variations
Figure 12: Gate Charge vs G ate-Emitter Volt­age
Figure 13: Total Switching Lo sses vs Temp er­ature
Figure 11: Total Switching Losses vs Gate Re­sistance
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Figure 14: Total Switching Losses vs Collector Current
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STGP7NC60HD - STGF7N C60HD - STGB7NC60HD
Figure 15: Thermal Impedance For TO-220/ D²PAK
Figure 16: Thermal Impedan ce Fo r TO-220 FP
Figure 17: Turn-Off SOA
Figure 18: Emitter-Collector Diode Characteristics
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STGP7NC60HD - STGF7N C60HD - STGB7NC60HD
Figure 19: Ic v s Fr equenc y
For a fast IGBT suitable for high frequency appli­cations, the typical collector current vs. maximum operating frequency curve is reported. That fre­quency is defined as follows:
f
= (PD - PC) / (EON + E
MAX
1) The maximum power dissipation is limited by maximum junction to case thermal resistance:
P
= ∆T / R
D
THJ-C
considering ∆T = TJ - TC = 125 °C- 75 °C = 50°C
2) The conduction losses are: P
= IC * V
C
with 50% of duty cycle, V
CE(SAT)
* δ typical value
CESAT
@125°C.
3) Power dissipation during ON & OFF commuta­tions is due to the switching frequency:
P
= (EON + E
SW
OFF
) * freq .
4) Typical values @ 125°C for switching losses a re used (test conditions: V
= 3.3 Ohm). Fu rthermore, diode recovery en-
R
G
ergy is included in the E
= 390V, VGE = 15V,
CE
(see note 2), while the
ON
tail of the collector current is included in the E measurements (see note 3).
OFF
OFF
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STGP7NC60HD - STGF7N C60HD - STGB7NC60HD
Figure 20: Test Circuit for Inductive Load Swit c hing
Figure 21: Switching Waveforms
Figure 22: Gate Charge Test Circuit
Figure 23: Diode Recovery Time Waveforms
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STGP7NC60HD - STGF7N C60HD - STGB7NC60HD
TO-220 MECHANICAL DATA
DIM.
A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137
øP
Q 2.65 2.95 0.104 0.116
MIN. TYP MAX. MIN. TYP. MAX.
3.75 3.85 0.147 0.151
mm. inch
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STGP7NC60HD - STGF7N C60HD - STGB7NC60HD
TO-220FP MECHANICAL DATA
DIM.
A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
E
A
D
B
L3
L6
L7
F1
F
H
F2
123
L4
L2
L5
G1
G
11/15
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STGP7NC60HD - STGF7N C60HD - STGB7NC60HD
TO-263 (D2PAK) MECHANICAL DATA
DIM.
A 4.32 4.57 0.178 0.180
A1 0.00 0.25 0.00 0.009
b 0.71 0.91 0.028 0.350
b2 1.15 1.40 0.045 0.055
c 0.46 0.61 0.018 0.024 c2 1.22 1.40 0.048 0.055
D 8.89 9.02 9.40 0.350 0.355 0.370
D1 8.01 0.315
E 10.04 10.28 0.395 0.404 e 2.54 0.010 H 13.10 13.70 0.515 0.540
L 1.30 1.70 0.051 0.067 L1 1.15 1.39 0.045 0.054 L2 1.27 1.77 0.050 0.069 L4 2.70 3.10 0.106 0.122 V2 0° 8° 0°
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
8°
12/15
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D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
STGP7NC60HD - STGF7N C60HD - STGB7NC60HD
REEL MECHANICAL DATA
DIM.
A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197
mm inch
MIN. MAX. MIN. MAX.
T APE MECHANICAL DATA
DIM.
A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0. 25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
* on sales type
mm inch
MIN. MAX. MIN. MAX.
BASE QTY BULK QTY
1000 1000
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STGP7NC60HD - STGF7N C60HD - STGB7NC60HD
Table 11: Revision History 9
Date Revision Description of Change s
07-Jun-2004 4 Stylesheet update. No content change 19-Aug-2004 5 Complete Version 17-Sep-2004 6 Figure 18 has been added 09-Nov-2004 7 Final datasheet
19-Jan-2005 8 Datasheet updated
09-Jun-2005 9 Modified title
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STGP7NC60HD - STGF7N C60HD - STGB7NC60HD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is g ranted by implic ati o n or ot h er wis e und er an y pat ent or pa te nt r igh ts of STMi cr oe l ect ro ni cs . Sp ec if i cat i on s ment i o ned i n th is p ub li c ati on ar e s ubj ec t to change without notice. This public ation supersedes and replaces all information previously supplie d. STMicroelectronics pro ducts are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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