Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the PowerMESH
™
IGBTs, with outstanding performances.
The suffix "H" identifies a family optimized for high
frequency applications in order to achieve very
high switching performances (reduced tfall) mantaining a low voltage drop.
(2) Eon i s t he tur n-on l oss es wh en a typ ica l diod e is used in th e tes t cir cui t in fig ure 2. I f the IGB T is o ffere d in a pac kage w it h a co- pa ck
diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)
(3) Turn-off losses in clude also the tail of the collector current.
Turn-on Switching Losses
Turn-off Switching Loss
(3)
Total Switching Loss
Turn-on Switching Losses
Turn-off Switching Loss
(3)
Total Switching Loss
= 390 V, IC = 7 A
V
CC
R
= 10 Ω, VGE= 15V, Tj= 25°C
G
(see Figure 19)
= 390 V, IC = 7 A
V
CC
RG= 10 Ω, VGE= 15V, Tj= 125°C
(see Figure 20)
95
115
210
140
215
355
125
150
275
µJ
µJ
µJ
µJ
µJ
µJ
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STGP7NC60HD - STGF7N C60HD - STGB7NC60HD
Table 10: Collector-Emitter Diode
SymbolParameterTest CondictionMin.Typ.Max.Unit
Q
I
Q
I
V
t
rr
t
a
rrm
S
t
rr
t
a
rrm
S
Forward On-VoltageIf = 3.5 A
f
If = 3.5 A, Tj = 125 °C
Reverse Recovery Time
rr
Reverse Recovery Charge
If = 7 A, V
= 25 °C, di/dt = 100 A/µs
T
j
= 40 V,
R
Reverse Recovery Current
Softness factor of the diode
Reverse Recovery Time
rr
Reverse Recovery Charge
If = 7 A, V
= 125 °C, di/dt = 100 A/µs
T
j
= 40 V,
R
Reverse Recovery Current
Softness factor of the diode
1.3
1.1
37
22
40
2.1
0.68
61
34
98
3.2
0.79
1.9
V
V
ns
ns
nC
A
ns
ns
nC
A
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STGP7NC60HD - STGF7N C60HD - STGB7NC60HD
Figure 3: Output Characteristics
Figure 4: Transconductance
Figure 6: Transfer Characteristics
Figure 7: Collector-Emitter On Voltage vs Temperature
Figure 5: Collector-Emitter On Voltage vs Collector Curr e nt
Figure 8: Normalized Gate Threshold vs Temperature
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STGP7NC60HD - STGF7N C60HD - STGB7NC60HD
Figure 9: Normalized Breakdown Voltage vs
Temperature
Figure 10: Capacitance Variations
Figure 12: Gate Charge vs G ate-Emitter Voltage
Figure 13: Total Switching Lo sses vs Temp erature
Figure 11: Total Switching Losses vs Gate Resistance
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Figure 14: Total Switching Losses vs Collector
Current
For a fast IGBT suitable for high frequency applications, the typical collector current vs. maximum
operating frequency curve is reported. That frequency is defined as follows:
f
= (PD - PC) / (EON + E
MAX
1) The maximum power dissipation is limited by
maximum junction to case thermal resistance:
P
= ∆T / R
D
THJ-C
considering ∆T = TJ - TC = 125 °C- 75 °C = 50°C
2) The conduction losses are:
P
= IC * V
C
with 50% of duty cycle, V
CE(SAT)
* δ
typical value
CESAT
@125°C.
3) Power dissipation during ON & OFF commutations is due to the switching frequency:
P
= (EON + E
SW
OFF
) * freq .
4) Typical values @ 125°C for switching losses a re
used (test conditions: V
= 3.3 Ohm). Fu rthermore, diode recovery en-
R
G
ergy is included in the E
= 390V, VGE = 15V,
CE
(see note 2), while the
ON
tail of the collector current is included in the E
measurements (see note 3).
OFF
)
OFF
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STGP7NC60HD - STGF7N C60HD - STGB7NC60HD
Figure 20: Test Circuit for Inductive Load
Swit c hing
07-Jun-20044Stylesheet update. No content change
19-Aug-20045Complete Version
17-Sep-20046Figure 18 has been added
09-Nov-20047Final datasheet
19-Jan-20058Datasheet updated
09-Jun-20059Modified title
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STGP7NC60HD - STGF7N C60HD - STGB7NC60HD
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