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STGD3NB60SD
N-CHANNEL 3A - 600V DPAK
Power MESH IGBT
PRELIMINARY DATA
■
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
■
VERY LOW ON-VOLTAGE DROP (V
cesat
)
■
HIGH CURRENT CAPABILITY
■
OFF LOSSES INCLUDE TAIL CURRENT
■
INTEGRATED FREEWHEELING DIODE
■
SURFACE-MOU NTING DPAK (TO-252)
POWER PACKAGE IN TA P E & R E EL
(SUFFIX "T4")
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH IGBTs, with outstanding
perfomances. The suffix "S" identifies a family
optimized to achieve minimum on-voltage drop
for low frequency applications (<1kHz).
APPLICATIONS
■
GAS DISCHARGE LAMP
■
STATIC RELAYS
■
MOTOR CONTROL
®
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
Collector-Emitter Voltage (VGS = 0) 600 V
V
GE
Gate-Emitter Voltage ± 20 V
I
C
Collector Current (continuous) at Tc = 25 oC6A
I
C
Collector Current (continuous) at Tc = 100 oC3A
I
CM
(•) Collector Current (pulsed) 25 A
P
tot
Total Dissipation at Tc = 25 oC48W
Derating Factor 0.32 W/
o
C
T
stg
Storage Temperature -65 to 175
o
C
T
j
Max. Operating Junction Temperature 175
o
C
(•) Pulse width limited by safe operating area
TYPE V
CES
V
CE(sat)
I
C
STGD3NB60SD 600 V < 1.5 V 3 A
March 2000
1
3
DPAK
TO-252
(Suffix "T4")
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THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
3.125
100
1.5
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
j
= 25 oC unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-Emitter
Breakdown Voltage
IC = 250 µA V
GE
= 0 600 V
I
CES
Collector cut-off
(V
GE
= 0)
V
CE
= Max Rating Tj = 25 oC
V
CE
= Max Rating Tj = 125 oC
10
100
µA
µA
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= ± 20 V VCE = 0 ± 100 nA
ON (∗
)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
Gate Threshold
Voltage
V
CE
= VGE IC = 250 µA 2.5 5 V
V
CE(SAT)
Collector-Emitter
Saturation Voltage
VGE = 15 V IC = 1.5 A
V
GE
= 15 V IC = 3 A
V
GE
= 15 V IC = 3 A Tj = 125 oC
1
1.2
1.1
1.5
V
V
V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
Forward
Transconductance
VCE =25 V IC = 3 A 1.7 2.5 S
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
CE
= 25 V f = 1 MHz V
GE
= 0 255
30
5.6
330
40
7
pF
pF
pF
Q
G
Q
GE
Q
GC
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 480 V IC = 3 A VGE = 15 V 18
5.4
5.5
nC
nC
nC
I
CL
Latching Current V
clamp
= 480 V RG=1kΩ
T
j
= 150 oC
12 A
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
t
d(on)
t
r
Delay Time
Rise Time
VCC = 480 V IC = 3 A
V
GE
= 15 V RG = 1kΩ
125
150
ns
ns
(di/dt)
on
E
on
Turn-on Current Slope
Turn-on Switching
Losses
V
CC
= 480 V IC = 3 A
R
G
= 1kΩ VGE = 15 V
T
j
= 125 oC
50
1100
A/µs
µJ
STGD3NB60SD
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
c
tr(v
off
)
t
d(off
)
t
f
E
off
(**)
Cross-Over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
V
CC
= 480 V IC = 3 A
R
GE
= 1 kΩ VGE = 15 V
1.8
1.0
3.4
0.72
1.15
µ
s
µ
s
µ
s
µ
s
mJ
t
c
tr(v
off
)
t
d(off
)
t
f
E
off
(**)
Cross-Over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
V
CC
= 480 V IC = 3 A
R
GE
= 1kΩ VGE = 15 V
T
j
= 125 oC
2.8
1.45
3.6
1.2
1.8
µ
s
µ
s
µ
s
µ
s
mJ
COLLECTOR-EMITTER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
f
I
fm
Forward Current
Forward Current pulsed
3
25
A
A
V
f
Forward On-Voltage If = 3 A
I
f
= 1 A
1.55
1.15
1.9 V
V
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
f
= 3 A VR=200 V
dI/dt = 100 A/µS T
j
= 125 oC
1700
4500
9.5
ns
nC
A
(•) Pulse width limited by max. junction temperature
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardi zat io n)
Thermal Impedance
STGD3NB60SD
3/8
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Output Characteristics
Transconductance
Collector-Emitter On Voltage vs Collector Current
Transfer Characteristics
Collector-Emitter On Voltage vs Temperature
Gate Threshold vs Temperature
STGD3NB60SD
4/8
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Normalized Breakdown Voltage vs Temperature
Gate Charge vs Gate-Emitter Voltage
Off Switching Losses vs Tj
Capacitance Variations
Off Switching Losses vs Ic
Switching Off Safe Operatin Area
STGD3NB60SD
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Diode Forward vs Tj Diode Forward Voltage
Fig. 1: Gate Charge test Circuit
Fig. 3: Switching Waveforms
Fig. 2: Test Circuit For Inductive Load Switching
STGD3NB60SD
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Page 7
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039
==
D
L2
L4
1 3
==
B
E
==
B2
G
2
A
C2
C
H
A1
DETAIL "A"
A2
DETAIL "A"
TO-252 (DPAK) MECHANICAL DATA
0068772-B
STGD3NB60SD
7/8
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Information f urnished i s believed t o be accurate an d reliabl e. How ever, STMicroelect ronics assu mes no responsib ility fo r the consequen ces
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to chan ge w ithout notice. This publicatio n su persedes a nd r eplaces al l inf ormati on previ ously suppl ied. STMicroelect ron ics produ cts
are not auth ori zed f or use as critical components i n life sup port devices or systems witho ut express written approval of STMicroelectr o nics.
The ST logo is a trademark of STMicroelectronics
© 1999 STMicroelectroni cs – Printed i n It aly – All Rights Reserved
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.
STGD3NB60SD
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